DE3279868D1 - Semiconductor memory device having a programming circuit - Google Patents

Semiconductor memory device having a programming circuit

Info

Publication number
DE3279868D1
DE3279868D1 DE8282111666T DE3279868T DE3279868D1 DE 3279868 D1 DE3279868 D1 DE 3279868D1 DE 8282111666 T DE8282111666 T DE 8282111666T DE 3279868 T DE3279868 T DE 3279868T DE 3279868 D1 DE3279868 D1 DE 3279868D1
Authority
DE
Germany
Prior art keywords
semiconductor memory
programming circuit
memory device
mosfet
fuse
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8282111666T
Other languages
English (en)
Inventor
Hiroshi Iwahashi
Kiyofumi Ochii
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP56204245A external-priority patent/JPS58105496A/ja
Priority claimed from JP56204246A external-priority patent/JPS58105497A/ja
Priority claimed from JP57060534A external-priority patent/JPS58177599A/ja
Application filed by Toshiba Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE3279868D1 publication Critical patent/DE3279868D1/de
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G11C29/785—Masking faults in memories by using spares or by reconfiguring using programmable devices with redundancy programming schemes
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G11C29/83—Masking faults in memories by using spares or by reconfiguring using programmable devices with reduced power consumption
DE8282111666T 1981-12-17 1982-12-16 Semiconductor memory device having a programming circuit Expired DE3279868D1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP56204245A JPS58105496A (ja) 1981-12-17 1981-12-17 半導体集積回路
JP56204246A JPS58105497A (ja) 1981-12-17 1981-12-17 半導体集積回路
JP57060534A JPS58177599A (ja) 1982-04-12 1982-04-12 半導体集積回路装置

Publications (1)

Publication Number Publication Date
DE3279868D1 true DE3279868D1 (en) 1989-09-14

Family

ID=27297227

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8282111666T Expired DE3279868D1 (en) 1981-12-17 1982-12-16 Semiconductor memory device having a programming circuit

Country Status (3)

Country Link
US (1) US4546455A (de)
EP (1) EP0083031B1 (de)
DE (1) DE3279868D1 (de)

Families Citing this family (49)

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JPS59142800A (ja) * 1983-02-04 1984-08-16 Fujitsu Ltd 半導体集積回路装置
US4609830A (en) * 1983-11-28 1986-09-02 Zoran Corporation Programmable logic gate
JPS60101196U (ja) * 1983-12-13 1985-07-10 篠原　友義 筆記具
US4613959A (en) * 1984-01-06 1986-09-23 Thomson Components-Mostek Corportion Zero power CMOS redundancy circuit
US4590388A (en) * 1984-04-23 1986-05-20 At&T Bell Laboratories CMOS spare decoder circuit
US4654826A (en) * 1984-08-20 1987-03-31 National Semiconductor Corporation Single device transfer static latch
EP0186175A3 (de) * 1984-12-24 1989-02-08 Nec Corporation Halbleiterspeichergerät mit Redundanzstruktur
US4837520A (en) * 1985-03-29 1989-06-06 Honeywell Inc. Fuse status detection circuit
US4823252A (en) * 1986-03-28 1989-04-18 Tandem Computers Incorporated Overlapped control store
JPS632351A (ja) * 1986-06-20 1988-01-07 Sharp Corp 半導体装置
US5367208A (en) * 1986-09-19 1994-11-22 Actel Corporation Reconfigurable programmable interconnect architecture
DE58903906D1 (de) * 1988-02-10 1993-05-06 Siemens Ag Redundanzdekoder eines integrierten halbleiterspeichers.
JPH01224999A (ja) * 1988-03-04 1989-09-07 Mitsubishi Electric Corp 半導体記憶装置
US4987325A (en) * 1988-07-13 1991-01-22 Samsung Electronics Co., Ltd. Mode selecting circuit for semiconductor memory device
JPH0817039B2 (ja) * 1988-08-19 1996-02-21 株式会社東芝 半導体メモリセル
US5327380B1 (en) * 1988-10-31 1999-09-07 Texas Instruments Inc Method and apparatus for inhibiting a predecoder when selecting a redundant row line
KR910008101B1 (ko) * 1988-12-30 1991-10-07 삼성전자 주식회사 반도체 메모리 소자의 피드백형 데이타 출력 회로
US4908525A (en) * 1989-02-03 1990-03-13 The United States Of America As Represented By The Secretary Of The Air Force Cut-only CMOS switch for discretionary connect and disconnect
US4995004A (en) * 1989-05-15 1991-02-19 Dallas Semiconductor Corporation RAM/ROM hybrid memory architecture
US4996670A (en) * 1989-09-28 1991-02-26 International Business Machines Corporation Zero standby power, radiation hardened, memory redundancy circuit
KR930000821B1 (ko) * 1990-02-24 1993-02-05 현대전자산업 주식회사 메모리 소자의 저소비 전력 리던던시(Redundancy)회로
US5198705A (en) * 1990-05-11 1993-03-30 Actel Corporation Logic module with configurable combinational and sequential blocks
US5270976A (en) * 1990-06-19 1993-12-14 Texas Instruments Incorporated Laser link decoder for DRAM redundancy scheme
JP2679390B2 (ja) * 1990-10-12 1997-11-19 日本電気株式会社 コード設定回路
JPH0831279B2 (ja) * 1990-12-20 1996-03-27 インターナショナル・ビジネス・マシーンズ・コーポレイション 冗長システム
KR940002272B1 (ko) * 1991-05-24 1994-03-19 삼성전자 주식회사 리던던시 기능을 가지는 반도체 메모리 장치
US5994770A (en) * 1991-07-09 1999-11-30 Dallas Semiconductor Corporation Portable electronic data carrier
JP2991575B2 (ja) * 1992-10-08 1999-12-20 沖電気工業株式会社 半導体集積回路
US5440246A (en) * 1994-03-22 1995-08-08 Mosel Vitelic, Incorporated Programmable circuit with fusible latch
US5848541A (en) * 1994-03-30 1998-12-15 Dallas Semiconductor Corporation Electrical/mechanical access control systems
US5831827A (en) * 1994-04-28 1998-11-03 Dallas Semiconductor Corporation Token shaped module for housing an electronic circuit
US5679944A (en) * 1994-06-15 1997-10-21 Dallas Semiconductor Corporation Portable electronic module having EPROM memory, systems and processes
DE9412376U1 (de) * 1994-08-01 1995-12-07 Telbus Ges Fuer Elektronische Speicherschaltung zur Kompensation von Bitfehlern in Speicherbausteinen
JP2630274B2 (ja) * 1994-09-28 1997-07-16 日本電気株式会社 半導体記憶装置
US5724282A (en) * 1996-09-06 1998-03-03 Micron Technology, Inc. System and method for an antifuse bank
US5936426A (en) * 1997-02-03 1999-08-10 Actel Corporation Logic function module for field programmable array
US5889414A (en) * 1997-04-28 1999-03-30 Mosel Vitelic Corporation Programmable circuits
US6163492A (en) 1998-10-23 2000-12-19 Mosel Vitelic, Inc. Programmable latches that include non-volatile programmable elements
US6084803A (en) * 1998-10-23 2000-07-04 Mosel Vitelic, Inc. Initialization of non-volatile programmable latches in circuits in which an initialization operation is performed
JP3636965B2 (ja) * 2000-05-10 2005-04-06 エルピーダメモリ株式会社 半導体装置
US6603344B2 (en) * 2001-07-11 2003-08-05 Infineon Technologies Ag Zero static power programmable fuse cell for integrated circuits
US6781437B2 (en) * 2001-07-11 2004-08-24 Infineon Technologies Aktiengesellschaft Zero static power programmable fuse cell for integrated circuits
US6839298B2 (en) * 2001-07-11 2005-01-04 Infineon Technologies Aktiengesellschaft Zero static power fuse cell for integrated circuits
US7050323B2 (en) * 2002-08-29 2006-05-23 Texas Instruments Incorporated Ferroelectric memory
US6710640B1 (en) * 2002-09-19 2004-03-23 Infineon Technologies Ag Active well-bias transistor for programming a fuse
US7437632B2 (en) * 2003-06-24 2008-10-14 Micron Technology, Inc. Circuits and methods for repairing defects in memory devices
US7342762B2 (en) 2005-11-10 2008-03-11 Littelfuse, Inc. Resettable circuit protection apparatus
US8248079B2 (en) * 2009-09-21 2012-08-21 Nanya Technology Corporation Sensing circuit for sensing electric fuse and sensing method thereof
US20140268983A1 (en) * 2013-03-15 2014-09-18 GlobalFoundries, Inc. Otprom array with leakage current cancelation for enhanced efuse sensing

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4228528B2 (en) * 1979-02-09 1992-10-06 Memory with redundant rows and columns
US4281398A (en) * 1980-02-12 1981-07-28 Mostek Corporation Block redundancy for memory array
US4380804A (en) * 1980-12-29 1983-04-19 Ncr Corporation Earom cell matrix and logic arrays with common memory gate
JPS58137192A (ja) * 1981-12-29 1983-08-15 Fujitsu Ltd 半導体記憶装置
JPS58130495A (ja) * 1982-01-29 1983-08-03 Toshiba Corp 半導体記憶装置

Also Published As

Publication number Publication date
EP0083031B1 (de) 1989-08-09
EP0083031A2 (de) 1983-07-06
EP0083031A3 (en) 1986-01-15
US4546455A (en) 1985-10-08

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)