DE3404875A1 - Halbleiteranordnung - Google Patents

Halbleiteranordnung

Info

Publication number
DE3404875A1
DE3404875A1 DE19843404875 DE3404875A DE3404875A1 DE 3404875 A1 DE3404875 A1 DE 3404875A1 DE 19843404875 DE19843404875 DE 19843404875 DE 3404875 A DE3404875 A DE 3404875A DE 3404875 A1 DE3404875 A1 DE 3404875A1
Authority
DE
Germany
Prior art keywords
light
gallium
phosphite
base body
emitting diodes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
DE19843404875
Other languages
German (de)
English (en)
Inventor
Heinz Prof. Dr.Rer.Nat. 5100 Aachen Beneking
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Telefunken Electronic GmbH
Licentia Patent Verwaltungs GmbH
Original Assignee
Telefunken Electronic GmbH
Licentia Patent Verwaltungs GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Telefunken Electronic GmbH, Licentia Patent Verwaltungs GmbH filed Critical Telefunken Electronic GmbH
Priority to DE19843404875 priority Critical patent/DE3404875A1/de
Publication of DE3404875A1 publication Critical patent/DE3404875A1/de
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/10—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
DE19843404875 1984-02-11 1984-02-11 Halbleiteranordnung Ceased DE3404875A1 (de)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DE19843404875 DE3404875A1 (de) 1984-02-11 1984-02-11 Halbleiteranordnung

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19843404875 DE3404875A1 (de) 1984-02-11 1984-02-11 Halbleiteranordnung

Publications (1)

Publication Number Publication Date
DE3404875A1 true DE3404875A1 (de) 1985-08-14

Family

ID=6227428

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19843404875 Ceased DE3404875A1 (de) 1984-02-11 1984-02-11 Halbleiteranordnung

Country Status (1)

Country Link
DE (1) DE3404875A1 (un)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0250171A1 (en) * 1986-06-13 1987-12-23 Massachusetts Institute Of Technology Compound semiconductor devices
US4914491A (en) * 1987-11-13 1990-04-03 Kopin Corporation Junction field-effect transistors formed on insulator substrates
FR2649537A1 (fr) * 1989-07-04 1991-01-11 Philips Electronique Lab Dispositif optoelectronique integre incluant une diode photoluminescente
US5003357A (en) * 1987-05-30 1991-03-26 Samsung Semiconductor And Telecommunications Co. Semiconductor light emitting device
EP0483868A2 (en) * 1990-11-02 1992-05-06 Norikatsu Yamauchi Semiconductor device having reflecting layer
EP0486052A1 (en) * 1990-11-16 1992-05-20 Daido Tokushuko Kabushiki Kaisha Light-emitting diode for concurrently emitting lights having different wavelengths
DE4302897A1 (un) * 1992-02-06 1993-08-12 Rohm Co Ltd
EP1059668A2 (en) * 1999-06-09 2000-12-13 Sanyo Electric Co., Ltd. Hybrid integrated circuit device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4039890A (en) * 1974-08-16 1977-08-02 Monsanto Company Integrated semiconductor light-emitting display array
US4241281A (en) * 1978-01-31 1980-12-23 Futaba Denshi Kogyo Kabushiki Kaisha Light emitting diode display device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4039890A (en) * 1974-08-16 1977-08-02 Monsanto Company Integrated semiconductor light-emitting display array
US4241281A (en) * 1978-01-31 1980-12-23 Futaba Denshi Kogyo Kabushiki Kaisha Light emitting diode display device

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
"IBM Technical Disclosure Bulletin" 16 (1973) 1018 1019 *
"Japanese J. of Appl. Physics", 19 (1980), 1127 - 1130 *

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0250171A1 (en) * 1986-06-13 1987-12-23 Massachusetts Institute Of Technology Compound semiconductor devices
US5003357A (en) * 1987-05-30 1991-03-26 Samsung Semiconductor And Telecommunications Co. Semiconductor light emitting device
US4914491A (en) * 1987-11-13 1990-04-03 Kopin Corporation Junction field-effect transistors formed on insulator substrates
FR2649537A1 (fr) * 1989-07-04 1991-01-11 Philips Electronique Lab Dispositif optoelectronique integre incluant une diode photoluminescente
EP0483868A3 (en) * 1990-11-02 1992-08-12 Norikatsu Yamauchi Semiconductor device having reflecting layer
EP0483868A2 (en) * 1990-11-02 1992-05-06 Norikatsu Yamauchi Semiconductor device having reflecting layer
US5260589A (en) * 1990-11-02 1993-11-09 Norikatsu Yamauchi Semiconductor device having reflecting layers made of varying unit semiconductors
EP0724300A2 (en) * 1990-11-02 1996-07-31 Norikatsu Yamauchi Semiconductor device having reflecting layer
EP0724300A3 (en) * 1990-11-02 1996-12-27 Norikatsu Yamauchi Semiconductor device having a reflective layer
EP0486052A1 (en) * 1990-11-16 1992-05-20 Daido Tokushuko Kabushiki Kaisha Light-emitting diode for concurrently emitting lights having different wavelengths
DE4302897A1 (un) * 1992-02-06 1993-08-12 Rohm Co Ltd
DE4302897C2 (de) * 1992-02-06 1998-09-24 Rohm Co Ltd Beleuchtungsvorrichtung
EP1059668A2 (en) * 1999-06-09 2000-12-13 Sanyo Electric Co., Ltd. Hybrid integrated circuit device
EP1059668A3 (en) * 1999-06-09 2007-07-18 Sanyo Electric Co., Ltd. Hybrid integrated circuit device

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Legal Events

Date Code Title Description
OM8 Search report available as to paragraph 43 lit. 1 sentence 1 patent law
OP8 Request for examination as to paragraph 44 patent law
8131 Rejection