DE3475845D1 - Field effect transistor read only memory - Google Patents

Field effect transistor read only memory

Info

Publication number
DE3475845D1
DE3475845D1 DE8484109398T DE3475845T DE3475845D1 DE 3475845 D1 DE3475845 D1 DE 3475845D1 DE 8484109398 T DE8484109398 T DE 8484109398T DE 3475845 T DE3475845 T DE 3475845T DE 3475845 D1 DE3475845 D1 DE 3475845D1
Authority
DE
Germany
Prior art keywords
memory
field effect
effect transistor
transistor read
read
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8484109398T
Other languages
English (en)
Inventor
Claude Louis Bertin
Harish Narandas Kotecha
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of DE3475845D1 publication Critical patent/DE3475845D1/de
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/08—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements
    • G11C17/10—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM
    • G11C17/12—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM using field-effect devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5692—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency read-only digital stores using storage elements with more than two stable states
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/903—FET configuration adapted for use as static memory cell
    • Y10S257/904—FET configuration adapted for use as static memory cell with passive components,, e.g. polysilicon resistors
DE8484109398T 1983-09-08 1984-08-08 Field effect transistor read only memory Expired DE3475845D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/530,451 US4583201A (en) 1983-09-08 1983-09-08 Resistor personalized memory device using a resistive gate fet

Publications (1)

Publication Number Publication Date
DE3475845D1 true DE3475845D1 (en) 1989-02-02

Family

ID=24113681

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8484109398T Expired DE3475845D1 (en) 1983-09-08 1984-08-08 Field effect transistor read only memory

Country Status (4)

Country Link
US (1) US4583201A (de)
EP (1) EP0139923B1 (de)
JP (1) JPS6061998A (de)
DE (1) DE3475845D1 (de)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61123169A (ja) * 1984-11-20 1986-06-11 Fujitsu Ltd 半導体集積回路
GB2191322B (en) * 1986-04-23 1989-12-06 Yushin Seiki Kogyo Kk Remote control device for vehicle locks
US4805142A (en) * 1986-07-01 1989-02-14 International Business Machines Corporation Multiple ROM data state, read/write memory cell
FR2617637B1 (fr) * 1987-07-02 1989-10-27 Bull Sa Procede de commande de l'etat de conduction d'un transistor mos et circuit integre mettant en oeuvre le procede
US6222762B1 (en) 1992-01-14 2001-04-24 Sandisk Corporation Multi-state memory
US7071060B1 (en) 1996-02-28 2006-07-04 Sandisk Corporation EEPROM with split gate source side infection with sidewall spacers
US5712180A (en) * 1992-01-14 1998-01-27 Sundisk Corporation EEPROM with split gate source side injection
US5313421A (en) * 1992-01-14 1994-05-17 Sundisk Corporation EEPROM with split gate source side injection
FR2767412B1 (fr) * 1997-08-14 2000-06-16 Dolphin Integration Sa Cellule memoire a lecture en courant
US5936880A (en) * 1997-11-13 1999-08-10 Vlsi Technology, Inc. Bi-layer programmable resistor memory
FR2836752A1 (fr) * 2002-02-11 2003-09-05 St Microelectronics Sa Cellule memoire a programmation unique
US7729155B2 (en) * 2005-12-30 2010-06-01 Stmicroelectronics Pvt. Ltd. High speed, low power, low leakage read only memory
US7447053B2 (en) * 2006-03-07 2008-11-04 Infineon Technologies Ag Memory device and method for operating such a memory device
CN101740574B (zh) * 2008-11-17 2011-08-17 中芯国际集成电路制造(上海)有限公司 只读存储器及其制作方法
US8351236B2 (en) 2009-04-08 2013-01-08 Sandisk 3D Llc Three-dimensional array of re-programmable non-volatile memory elements having vertical bit lines and a single-sided word line architecture
US7983065B2 (en) * 2009-04-08 2011-07-19 Sandisk 3D Llc Three-dimensional array of re-programmable non-volatile memory elements having vertical bit lines
US8199576B2 (en) * 2009-04-08 2012-06-12 Sandisk 3D Llc Three-dimensional array of re-programmable non-volatile memory elements having vertical bit lines and a double-global-bit-line architecture
US8547720B2 (en) 2010-06-08 2013-10-01 Sandisk 3D Llc Non-volatile memory having 3D array of read/write elements with efficient decoding of vertical bit lines and word lines
US8526237B2 (en) 2010-06-08 2013-09-03 Sandisk 3D Llc Non-volatile memory having 3D array of read/write elements and read/write circuits and method thereof

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4092735A (en) * 1976-12-27 1978-05-30 Texas Instruments Incorporated Static memory cell using field implanted resistance
US4158239A (en) * 1977-12-20 1979-06-12 International Business Machines Corporation Resistive gate FET flip-flop storage cell
US4208727A (en) * 1978-06-15 1980-06-17 Texas Instruments Incorporated Semiconductor read only memory using MOS diodes
US4238839A (en) * 1979-04-19 1980-12-09 National Semiconductor Corporation Laser programmable read only memory

Also Published As

Publication number Publication date
EP0139923A2 (de) 1985-05-08
EP0139923A3 (en) 1986-12-30
JPS638558B2 (de) 1988-02-23
JPS6061998A (ja) 1985-04-09
EP0139923B1 (de) 1988-12-28
US4583201A (en) 1986-04-15

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee