DE3479363D1 - An ion beam machining device - Google Patents

An ion beam machining device

Info

Publication number
DE3479363D1
DE3479363D1 DE8484301276T DE3479363T DE3479363D1 DE 3479363 D1 DE3479363 D1 DE 3479363D1 DE 8484301276 T DE8484301276 T DE 8484301276T DE 3479363 T DE3479363 T DE 3479363T DE 3479363 D1 DE3479363 D1 DE 3479363D1
Authority
DE
Germany
Prior art keywords
ion beam
machining device
beam machining
ion
machining
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8484301276T
Other languages
English (en)
Inventor
Takahisa Masuzawa
Ichiro Tsuchiya
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
University of Tokyo NUC
Original Assignee
University of Tokyo NUC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by University of Tokyo NUC filed Critical University of Tokyo NUC
Application granted granted Critical
Publication of DE3479363D1 publication Critical patent/DE3479363D1/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching
    • H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching for evaporating or etching
    • H01J37/3056—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching for evaporating or etching for microworking, e.g. etching of gratings, trimming of electrical components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/08—Ion sources; Ion guns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching
    • H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching for evaporating or etching
DE8484301276T 1983-07-14 1984-02-27 An ion beam machining device Expired DE3479363D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58126848A JPS6020440A (ja) 1983-07-14 1983-07-14 イオンビ−ム加工装置

Publications (1)

Publication Number Publication Date
DE3479363D1 true DE3479363D1 (en) 1989-09-14

Family

ID=14945353

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8484301276T Expired DE3479363D1 (en) 1983-07-14 1984-02-27 An ion beam machining device

Country Status (5)

Country Link
US (1) US4574179A (de)
EP (1) EP0132015B1 (de)
JP (1) JPS6020440A (de)
CA (1) CA1217532A (de)
DE (1) DE3479363D1 (de)

Families Citing this family (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4645977A (en) * 1984-08-31 1987-02-24 Matsushita Electric Industrial Co., Ltd. Plasma CVD apparatus and method for forming a diamond like carbon film
JPH0630237B2 (ja) * 1984-09-10 1994-04-20 株式会社日立製作所 イオン打込み装置
US4810935A (en) * 1985-05-03 1989-03-07 The Australian National University Method and apparatus for producing large volume magnetoplasmas
DE3688860T2 (de) * 1985-05-28 1993-11-25 Rikagaku Kenkyusho Mittels Elektronenstrahl angeregte Ionenstrahlquelle.
GB8522976D0 (en) * 1985-09-17 1985-10-23 Atomic Energy Authority Uk Ion sources
JPH0654644B2 (ja) * 1985-10-04 1994-07-20 株式会社日立製作所 イオン源
DE3601632A1 (de) * 1986-01-21 1987-07-23 Leybold Heraeus Gmbh & Co Kg Verfahren zum herstellen von extraktionsgittern fuer ionenquellen und durch das verfahren hergestellte extraktionsgitter
JP2507992B2 (ja) * 1986-03-15 1996-06-19 株式会社島津製作所 イオン銃
JPS62222633A (ja) * 1986-03-25 1987-09-30 Sharp Corp 半導体素子の製造方法
DE3615361C2 (de) * 1986-05-06 1994-09-01 Santos Pereira Ribeiro Car Dos Vorrichtung zur Oberflächenbehandlung von Werkstücken
US4737688A (en) * 1986-07-22 1988-04-12 Applied Electron Corporation Wide area source of multiply ionized atomic or molecular species
JPS63124343A (ja) * 1986-11-14 1988-05-27 Nippon Telegr & Teleph Corp <Ntt> イオンソ−ス
JPH0766762B2 (ja) * 1987-02-02 1995-07-19 日本電信電話株式会社 イオンソ−ス装置用一枚グリツド部材
US4749911A (en) * 1987-03-30 1988-06-07 Rpc Industries Ion plasma electron gun with dose rate control via amplitude modulation of the plasma discharge
JPH0610608Y2 (ja) * 1987-07-23 1994-03-16 株式会社エリオニクス イオン流引き出し電極
FR2619247A1 (fr) * 1987-08-05 1989-02-10 Realisations Nucleaires Et Implanteur d'ions metalliques
US5089746A (en) * 1989-02-14 1992-02-18 Varian Associates, Inc. Production of ion beams by chemically enhanced sputtering of solids
JP2552185B2 (ja) * 1989-05-15 1996-11-06 松下電工株式会社 イオン銃グリッド
DE59202116D1 (de) * 1991-04-23 1995-06-14 Balzers Hochvakuum Verfahren zur Abtragung von Material von einer Oberfläche in einer Vakuumkammer.
JP2799090B2 (ja) * 1991-09-09 1998-09-17 シャープ株式会社 イオン注入装置
JPH06224154A (ja) * 1993-01-25 1994-08-12 Mitsubishi Electric Corp プラズマ処理装置
JPH07169746A (ja) * 1993-12-14 1995-07-04 Ebara Corp 低エネルギー中性粒子線を用いた微細加工装置
US5811022A (en) 1994-11-15 1998-09-22 Mattson Technology, Inc. Inductive plasma reactor
US5468955A (en) * 1994-12-20 1995-11-21 International Business Machines Corporation Neutral beam apparatus for in-situ production of reactants and kinetic energy transfer
DE29615190U1 (de) * 1996-03-11 1996-11-28 Balzers Verschleissschutz Gmbh Anlage zur Beschichtung von Werkstücken
AU4028297A (en) * 1997-09-12 1999-04-05 Balzers Aktiengesellschaft Tool having a protective layer system
US6486480B1 (en) * 1998-04-10 2002-11-26 The Regents Of The University Of California Plasma formed ion beam projection lithography system
US6373070B1 (en) 1999-10-12 2002-04-16 Fei Company Method apparatus for a coaxial optical microscope with focused ion beam
FR2806527B1 (fr) * 2000-03-20 2002-10-25 Schlumberger Technologies Inc Colonne a focalisation simultanee d'un faisceau de particules et d'un faisceau optique
US6617538B1 (en) 2000-03-31 2003-09-09 Imad Mahawili Rotating arc plasma jet and method of use for chemical synthesis and chemical by-products abatements
JP3917061B2 (ja) * 2002-11-14 2007-05-23 株式会社昭和真空 圧電素子の周波数調整装置
WO2005006545A1 (ja) * 2003-07-10 2005-01-20 Murata Manufacturing Co., Ltd. 電子部品の周波数調整装置及びそれを用いた電子部品の周波数調整方法
US6989545B1 (en) * 2004-07-07 2006-01-24 Axcelis Technologies, Inc. Device and method for measurement of beam angle and divergence
KR100585937B1 (ko) 2004-12-06 2006-06-07 학교법인 성균관대학 개선된 이온빔 소오스
US8686379B1 (en) 2010-09-07 2014-04-01 Joseph C. Robinson Method and apparatus for preparing serial planar cross sections
US8878147B2 (en) 2010-09-07 2014-11-04 Joseph C. Robinson Method and apparatus for in situ preparation of serial planar surfaces for microscopy
US8435727B2 (en) * 2010-10-01 2013-05-07 Varian Semiconductor Equipment Associates, Inc. Method and system for modifying photoresist using electromagnetic radiation and ion implantation
US9209032B2 (en) * 2013-03-15 2015-12-08 Tokyo Electron Limited Electric pressure systems for control of plasma properties and uniformity
JP6509553B2 (ja) * 2014-12-19 2019-05-08 株式会社アルバック スパッタリング装置
KR20210030074A (ko) * 2019-09-09 2021-03-17 삼성전자주식회사 진공 척 및 상기 진공 척을 포함하는 기판 처리 장치
US11264212B1 (en) * 2020-09-29 2022-03-01 Tokyo Electron Limited Ion angle detector

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3573977A (en) * 1968-09-19 1971-04-06 Nasa Process for glass coating an ion accelerator grid
DE1958122A1 (de) * 1969-11-19 1971-05-19 Deutsche Forsch Luft Raumfahrt Beschleuniger fuer elektrostatische Ionentriebwerke
US3744247A (en) * 1971-09-14 1973-07-10 Nasa Single grid accelerator for an ion thrustor
JPS5941510B2 (ja) * 1979-07-24 1984-10-08 双葉電子工業株式会社 酸化ベリリウム膜とその形成方法
US4447773A (en) * 1981-06-22 1984-05-08 California Institute Of Technology Ion beam accelerator system
EP0106497B1 (de) * 1982-09-10 1988-06-01 Nippon Telegraph And Telephone Corporation Ionenflutgerät
FR2538987A1 (fr) * 1983-01-05 1984-07-06 Commissariat Energie Atomique Enceinte pour le traitement et notamment la gravure de substrats par la methode du plasma reactif

Also Published As

Publication number Publication date
CA1217532A (en) 1987-02-03
US4574179A (en) 1986-03-04
EP0132015A2 (de) 1985-01-23
JPS6020440A (ja) 1985-02-01
EP0132015B1 (de) 1989-08-09
JPH0132627B2 (de) 1989-07-07
EP0132015A3 (en) 1986-12-30

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee