DE3483184D1 - Bearbeitungsvorrichtung mittels plasma. - Google Patents
Bearbeitungsvorrichtung mittels plasma.Info
- Publication number
- DE3483184D1 DE3483184D1 DE8484304597T DE3483184T DE3483184D1 DE 3483184 D1 DE3483184 D1 DE 3483184D1 DE 8484304597 T DE8484304597 T DE 8484304597T DE 3483184 T DE3483184 T DE 3483184T DE 3483184 D1 DE3483184 D1 DE 3483184D1
- Authority
- DE
- Germany
- Prior art keywords
- plasma
- machining device
- machining
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/04—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings formed by bundles of fibres
- G02B6/06—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings formed by bundles of fibres the relative position of the fibres being the same at both ends, e.g. for transporting images
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32357—Generation remote from the workpiece, e.g. down-stream
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58124511A JPS6016424A (ja) | 1983-07-08 | 1983-07-08 | マイクロ波プラズマ処理方法及びその装置 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE3483184D1 true DE3483184D1 (de) | 1990-10-18 |
Family
ID=14887295
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE8484304597T Expired - Fee Related DE3483184D1 (de) | 1983-07-08 | 1984-07-05 | Bearbeitungsvorrichtung mittels plasma. |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US4512868A (de) |
| EP (1) | EP0131433B1 (de) |
| JP (1) | JPS6016424A (de) |
| KR (1) | KR890002732B1 (de) |
| DE (1) | DE3483184D1 (de) |
Families Citing this family (59)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0627323B2 (ja) * | 1983-12-26 | 1994-04-13 | 株式会社日立製作所 | スパツタリング方法及びその装置 |
| JPS6130036A (ja) * | 1984-07-23 | 1986-02-12 | Fujitsu Ltd | マイクロ波プラズマ処理装置 |
| US4554047A (en) * | 1984-10-12 | 1985-11-19 | At&T Bell Laboratories | Downstream apparatus and technique |
| JPS61131454A (ja) * | 1984-11-30 | 1986-06-19 | Fujitsu Ltd | マイクロ波プラズマ処理方法と装置 |
| US5364519A (en) * | 1984-11-30 | 1994-11-15 | Fujitsu Limited | Microwave plasma processing process and apparatus |
| JPS61222534A (ja) * | 1985-03-28 | 1986-10-03 | Anelva Corp | 表面処理方法および装置 |
| JP2616760B2 (ja) * | 1985-04-08 | 1997-06-04 | 株式会社 半導体エネルギー研究所 | プラズマ気相反応装置 |
| JPS61199038U (de) * | 1985-05-31 | 1986-12-12 | ||
| JPH0695500B2 (ja) * | 1985-07-19 | 1994-11-24 | 富士通株式会社 | マイクロ波プラズマ処理方法と装置 |
| JPS6231900U (de) * | 1985-08-09 | 1987-02-25 | ||
| US4673456A (en) * | 1985-09-17 | 1987-06-16 | Machine Technology, Inc. | Microwave apparatus for generating plasma afterglows |
| JPS62213126A (ja) * | 1986-03-13 | 1987-09-19 | Fujitsu Ltd | マイクロ波プラズマ処理装置 |
| JPS62281331A (ja) * | 1986-05-29 | 1987-12-07 | Fujitsu Ltd | エツチング方法 |
| US4718974A (en) * | 1987-01-09 | 1988-01-12 | Ultraphase Equipment, Inc. | Photoresist stripping apparatus using microwave pumped ultraviolet lamp |
| FR2616088B1 (fr) * | 1987-06-03 | 1991-07-05 | Rifa Sa | Procede et installation pour traiter la surface d'objets |
| US4866346A (en) * | 1987-06-22 | 1989-09-12 | Applied Science & Technology, Inc. | Microwave plasma generator |
| US4842676A (en) * | 1987-07-16 | 1989-06-27 | Texas Instruments Incorporated | Process for etch of tungsten |
| JPH0777211B2 (ja) * | 1987-08-19 | 1995-08-16 | 富士通株式会社 | アッシング方法 |
| US4859303A (en) * | 1987-10-09 | 1989-08-22 | Northern Telecom Limited | Method and apparatus for removing coating from substrate |
| US4836902A (en) * | 1987-10-09 | 1989-06-06 | Northern Telecom Limited | Method and apparatus for removing coating from substrate |
| JPH01135017A (ja) * | 1987-11-20 | 1989-05-26 | Fujitsu Ltd | 半導体装置の製造方法 |
| US4893584A (en) * | 1988-03-29 | 1990-01-16 | Energy Conversion Devices, Inc. | Large area microwave plasma apparatus |
| US4869777A (en) * | 1988-12-16 | 1989-09-26 | Ibm Corporation | Method for selectively etching the materials of a composite of two materials |
| JPH07101685B2 (ja) * | 1989-01-26 | 1995-11-01 | 富士通株式会社 | マイクロ波プラズマ処理装置 |
| JPH0775226B2 (ja) * | 1990-04-10 | 1995-08-09 | インターナシヨナル・ビジネス・マシーンズ・コーポレーシヨン | プラズマ処理方法及び装置 |
| DE9013937U1 (de) * | 1990-10-06 | 1992-02-06 | Roehm Gmbh, 6100 Darmstadt, De | |
| DE4037091C2 (de) * | 1990-11-22 | 1996-06-20 | Leybold Ag | Vorrichtung für die Erzeugung eines homogenen Mikrowellenfeldes |
| JP2571956Y2 (ja) * | 1991-05-16 | 1998-05-20 | 因幡電機産業株式会社 | 配管支持具 |
| DE4119362A1 (de) * | 1991-06-12 | 1992-12-17 | Leybold Ag | Teilchenquelle, insbesondere fuer reaktive ionenaetz- und plasmaunterstuetzte cvd-verfahren |
| JP3158715B2 (ja) * | 1992-03-30 | 2001-04-23 | 株式会社ダイヘン | プラズマ処理装置 |
| DE4308990A1 (de) * | 1993-03-20 | 1994-09-22 | Bosch Gmbh Robert | Ätzverfahren und Vorrichtung zur Reinigung von Halbleiterelementen, insbesondere Leistungsdioden |
| US5567241A (en) * | 1993-04-30 | 1996-10-22 | Energy Conversion Devices, Inc. | Method and apparatus for the improved microwave deposition of thin films |
| JP3288490B2 (ja) * | 1993-07-09 | 2002-06-04 | 富士通株式会社 | 半導体装置の製造方法及び半導体装置の製造装置 |
| US5498308A (en) * | 1994-02-25 | 1996-03-12 | Fusion Systems Corp. | Plasma asher with microwave trap |
| US5783100A (en) * | 1994-03-16 | 1998-07-21 | Micron Display Technology, Inc. | Method of high density plasma etching for semiconductor manufacture |
| US5811022A (en) * | 1994-11-15 | 1998-09-22 | Mattson Technology, Inc. | Inductive plasma reactor |
| US5560781A (en) * | 1995-05-08 | 1996-10-01 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Process for non-contact removal of organic coatings from the surface of paintings |
| KR100238216B1 (ko) * | 1996-11-27 | 2000-01-15 | 윤종용 | 랑뮤일 프로브 |
| US6026762A (en) * | 1997-04-23 | 2000-02-22 | Applied Materials, Inc. | Apparatus for improved remote microwave plasma source for use with substrate processing systems |
| US6579805B1 (en) * | 1999-01-05 | 2003-06-17 | Ronal Systems Corp. | In situ chemical generator and method |
| US6263830B1 (en) | 1999-04-12 | 2001-07-24 | Matrix Integrated Systems, Inc. | Microwave choke for remote plasma generator |
| US6461971B1 (en) * | 2000-01-21 | 2002-10-08 | Chartered Semiconductor Manufacturing Ltd. | Method of residual resist removal after etching of aluminum alloy filmsin chlorine containing plasma |
| US6873113B2 (en) * | 2000-04-13 | 2005-03-29 | Tokyo Electron Limited | Stand alone plasma vacuum pump |
| US6729850B2 (en) | 2001-10-31 | 2004-05-04 | Tokyo Electron Limited | Applied plasma duct system |
| US7375035B2 (en) | 2003-04-29 | 2008-05-20 | Ronal Systems Corporation | Host and ancillary tool interface methodology for distributed processing |
| US7429714B2 (en) * | 2003-06-20 | 2008-09-30 | Ronal Systems Corporation | Modular ICP torch assembly |
| US7910166B2 (en) * | 2005-04-26 | 2011-03-22 | First Solar, Inc. | System and method for depositing a material on a substrate |
| US7931937B2 (en) * | 2005-04-26 | 2011-04-26 | First Solar, Inc. | System and method for depositing a material on a substrate |
| US7968145B2 (en) * | 2005-04-26 | 2011-06-28 | First Solar, Inc. | System and method for depositing a material on a substrate |
| US7927659B2 (en) * | 2005-04-26 | 2011-04-19 | First Solar, Inc. | System and method for depositing a material on a substrate |
| KR100666881B1 (ko) * | 2005-06-10 | 2007-01-10 | 삼성전자주식회사 | 포토레지스트 제거 방법 및 이를 이용한 반도체 소자의제조 방법. |
| KR100814409B1 (ko) * | 2006-08-14 | 2008-03-18 | 삼성전자주식회사 | 애싱 방법 및 이를 수행하기 위한 장치 |
| WO2010129901A2 (en) | 2009-05-08 | 2010-11-11 | Vandermeulen Peter F | Methods and systems for plasma deposition and treatment |
| JP5656504B2 (ja) * | 2010-08-06 | 2015-01-21 | 三菱重工業株式会社 | 真空処理装置およびプラズマ処理方法 |
| US9129778B2 (en) | 2011-03-18 | 2015-09-08 | Lam Research Corporation | Fluid distribution members and/or assemblies |
| US9548227B2 (en) | 2013-10-30 | 2017-01-17 | Nisene Technology Group | Microwave induced plasma decapsulation using a dielectric plasma discharge tube |
| CN111033689B (zh) | 2017-06-27 | 2023-07-28 | 彼得·F·范德莫伊伦 | 用于等离子体沉积和处理的方法及系统 |
| US10861667B2 (en) | 2017-06-27 | 2020-12-08 | Peter F. Vandermeulen | Methods and systems for plasma deposition and treatment |
| KR20210094694A (ko) * | 2020-01-21 | 2021-07-30 | 삼성전자주식회사 | 기판 처리 장치, 물질막 증착 장치, 및 상압 화학 기상 증착 장치 |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4362632A (en) * | 1974-08-02 | 1982-12-07 | Lfe Corporation | Gas discharge apparatus |
| US4192706A (en) * | 1975-01-22 | 1980-03-11 | Tokyo Shibaura Electric Co., Ltd. | Gas-etching device |
| JPS55131175A (en) * | 1979-03-30 | 1980-10-11 | Toshiba Corp | Surface treatment apparatus with microwave plasma |
| JPS55134175A (en) * | 1979-04-06 | 1980-10-18 | Hitachi Ltd | Microwave plasma etching unit |
| JPS5613480A (en) * | 1979-07-13 | 1981-02-09 | Hitachi Ltd | Dry etching apparatus |
| JPS5696840A (en) * | 1979-12-28 | 1981-08-05 | Fujitsu Ltd | Microwave plasma treating method |
| JPS5751265A (en) * | 1980-09-10 | 1982-03-26 | Hitachi Ltd | Microwave plasma etching device |
| JPS5776844A (en) * | 1980-10-31 | 1982-05-14 | Fujitsu Ltd | Method and apparatus for processing microwave plasma |
| JPS57159016A (en) * | 1981-03-26 | 1982-10-01 | Sumitomo Electric Ind Ltd | Manufacture of amorphous silicon film |
| JPS58100431A (ja) * | 1981-12-10 | 1983-06-15 | Fujitsu Ltd | プラズマ・エツチング方法及びその装置 |
| JPS58170536A (ja) * | 1982-03-31 | 1983-10-07 | Fujitsu Ltd | プラズマ処理方法及びその装置 |
| DE3376921D1 (en) * | 1982-09-10 | 1988-07-07 | Nippon Telegraph & Telephone | Ion shower apparatus |
| JPH0770509B2 (ja) * | 1982-10-08 | 1995-07-31 | 株式会社日立製作所 | ドライプロセス装置 |
-
1983
- 1983-07-08 JP JP58124511A patent/JPS6016424A/ja active Granted
-
1984
- 1984-06-27 KR KR1019840003648A patent/KR890002732B1/ko not_active IP Right Cessation
- 1984-07-05 EP EP84304597A patent/EP0131433B1/de not_active Expired - Lifetime
- 1984-07-05 DE DE8484304597T patent/DE3483184D1/de not_active Expired - Fee Related
- 1984-07-09 US US06/628,863 patent/US4512868A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| US4512868A (en) | 1985-04-23 |
| KR890002732B1 (ko) | 1989-07-25 |
| KR850000901A (ko) | 1985-03-09 |
| JPS6016424A (ja) | 1985-01-28 |
| JPH055167B2 (de) | 1993-01-21 |
| EP0131433A3 (en) | 1986-05-14 |
| EP0131433B1 (de) | 1990-09-12 |
| EP0131433A2 (de) | 1985-01-16 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8364 | No opposition during term of opposition | ||
| 8339 | Ceased/non-payment of the annual fee |