DE3485722D1 - Dampfphaseverfahren zum ablagern von material. - Google Patents

Dampfphaseverfahren zum ablagern von material.

Info

Publication number
DE3485722D1
DE3485722D1 DE8484904273T DE3485722T DE3485722D1 DE 3485722 D1 DE3485722 D1 DE 3485722D1 DE 8484904273 T DE8484904273 T DE 8484904273T DE 3485722 T DE3485722 T DE 3485722T DE 3485722 D1 DE3485722 D1 DE 3485722D1
Authority
DE
Germany
Prior art keywords
phase method
method deposition
steam phase
steam
deposition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8484904273T
Other languages
English (en)
Inventor
Michael Cox
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
American Telephone and Telegraph Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by American Telephone and Telegraph Co Inc filed Critical American Telephone and Telegraph Co Inc
Application granted granted Critical
Publication of DE3485722D1 publication Critical patent/DE3485722D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45568—Porous nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/935—Gas flow control

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
DE8484904273T 1983-12-30 1984-11-07 Dampfphaseverfahren zum ablagern von material. Expired - Lifetime DE3485722D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US06/566,918 US4574093A (en) 1983-12-30 1983-12-30 Deposition technique
PCT/US1984/001813 WO1985003088A1 (en) 1983-12-30 1984-11-07 Material vapor deposition technique

Publications (1)

Publication Number Publication Date
DE3485722D1 true DE3485722D1 (de) 1992-06-17

Family

ID=24264955

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8484904273T Expired - Lifetime DE3485722D1 (de) 1983-12-30 1984-11-07 Dampfphaseverfahren zum ablagern von material.

Country Status (6)

Country Link
US (1) US4574093A (de)
EP (1) EP0168409B1 (de)
JP (1) JP2636832B2 (de)
CA (1) CA1226766A (de)
DE (1) DE3485722D1 (de)
WO (1) WO1985003088A1 (de)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61191015A (ja) * 1985-02-20 1986-08-25 Hitachi Ltd 半導体の気相成長方法及びその装置
NL8602357A (nl) * 1985-10-07 1987-05-04 Epsilon Ltd Partnership Inrichting en werkwijze voor het chemisch uit damp neerslaan met gebruik van een axiaal symmetrische gasstroming.
JPS63186875A (ja) * 1987-01-29 1988-08-02 Tadahiro Omi 表面反応成膜装置
US5198034A (en) * 1987-03-31 1993-03-30 Epsilon Technology, Inc. Rotatable substrate supporting mechanism with temperature sensing device for use in chemical vapor deposition equipment
US4987094A (en) * 1989-06-02 1991-01-22 Bell Communications Research, Inc. Method of making a macroscopic stepped structure on a vicinally cut crystal
US5015323A (en) * 1989-10-10 1991-05-14 The United States Of America As Represented By The Secretary Of Commerce Multi-tipped field-emission tool for nanostructure fabrication
US5378501A (en) * 1993-10-05 1995-01-03 Foster; Robert F. Method for chemical vapor deposition of titanium nitride films at low temperatures
GB9411911D0 (en) * 1994-06-14 1994-08-03 Swan Thomas & Co Ltd Improvements in or relating to chemical vapour deposition
US6183565B1 (en) 1997-07-08 2001-02-06 Asm International N.V Method and apparatus for supporting a semiconductor wafer during processing
US5855678A (en) * 1997-04-30 1999-01-05 Sri International Fluidized bed reactor to deposit a material on a surface by chemical vapor deposition, and methods of forming a coated substrate therewith
TW589396B (en) * 2003-01-07 2004-06-01 Arima Optoelectronics Corp Chemical vapor deposition reactor
GB2415707A (en) 2004-06-30 2006-01-04 Arima Optoelectronic Vertical hydride vapour phase epitaxy deposition using a homogenising diaphragm
US11136667B2 (en) 2007-01-08 2021-10-05 Eastman Kodak Company Deposition system and method using a delivery head separated from a substrate by gas pressure
GB0702560D0 (en) 2007-02-09 2007-03-21 Univ Bath Production of Semiconductor devices
GB2460898B (en) 2008-06-19 2012-10-10 Wang Nang Wang Production of semiconductor material and devices using oblique angle etched templates
KR101118268B1 (ko) * 2009-08-27 2012-03-20 한국산업기술대학교산학협력단 요철 패턴 기판 상의 고품질 비극성／반극성 반도체 소자 및 그 제조 방법

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2689807A (en) * 1950-06-16 1954-09-21 Thompson Prod Inc Method of coating refractory metal articles
US2789064A (en) * 1953-03-02 1957-04-16 Schladitz Hermann Process and apparatus for the metallisation of continuously travelling organic and inorganic foils by thermal decomposition of metal compounds
JPS4844395B1 (de) * 1968-08-02 1973-12-24
US3701682A (en) * 1970-07-02 1972-10-31 Texas Instruments Inc Thin film deposition system
US3745969A (en) * 1971-04-19 1973-07-17 Motorola Inc Offset top ejection vapor deposition apparatus
FR2227640B1 (de) * 1973-04-27 1977-12-30 Radiotechnique Compelec
US4148939A (en) * 1974-08-19 1979-04-10 Korjukin Alexandr V Method of manufacturing a transparent body having a predetermined opacity gradient
JPS54103552A (en) * 1978-02-01 1979-08-15 Hitachi Electronics Pattern formation method
JPS5637478Y2 (de) * 1978-09-11 1981-09-02
US4315960A (en) * 1980-05-28 1982-02-16 Matsushita Electric Industrial Co., Ltd. Method of making a thin film

Also Published As

Publication number Publication date
JP2636832B2 (ja) 1997-07-30
EP0168409B1 (de) 1992-05-13
US4574093A (en) 1986-03-04
JPS61500994A (ja) 1986-05-15
EP0168409A1 (de) 1986-01-22
CA1226766A (en) 1987-09-15
WO1985003088A1 (en) 1985-07-18

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8328 Change in the person/name/address of the agent

Free format text: BLUMBACH, KRAMER & PARTNER, 65193 WIESBADEN