DE3508469A1 - Process for patterning layer sequences applied to a transparent substrate - Google Patents
Process for patterning layer sequences applied to a transparent substrateInfo
- Publication number
- DE3508469A1 DE3508469A1 DE19853508469 DE3508469A DE3508469A1 DE 3508469 A1 DE3508469 A1 DE 3508469A1 DE 19853508469 DE19853508469 DE 19853508469 DE 3508469 A DE3508469 A DE 3508469A DE 3508469 A1 DE3508469 A1 DE 3508469A1
- Authority
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- Germany
- Prior art keywords
- layer
- laser light
- irradiation
- oxide
- transparent substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 21
- 238000000034 method Methods 0.000 title claims abstract description 14
- 238000000059 patterning Methods 0.000 title abstract 2
- 239000004065 semiconductor Substances 0.000 claims abstract description 12
- 238000010521 absorption reaction Methods 0.000 claims abstract description 7
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 7
- 239000010703 silicon Substances 0.000 claims abstract description 7
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 20
- 230000001678 irradiating effect Effects 0.000 claims description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 6
- 239000011521 glass Substances 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 230000005855 radiation Effects 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
- H01L31/03921—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including only elements of Group IV of the Periodic System
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
- H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
- H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
- H01L31/0463—PV modules composed of a plurality of thin film solar cells deposited on the same substrate characterised by special patterning methods to connect the PV cells in a module, e.g. laser cutting of the conductive or active layers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
Description
Verfahren zum Strukturieren von auf einemMethod for structuring on a
transparenten Substrat aufgebrachten Schicht folgen Die Erfindung betrifft ein Verfahren zum Strukturieren von auf einem transparenten Substrat aufgebrachten Schichtfolgen, nach dem Oberbegriff des Patentanspruchs 1.transparent substrate applied layer follow the invention relates to a method for structuring of applied to a transparent substrate Layer sequences, according to the preamble of claim 1.
Ein derartiges Verfahren ist aus S. Nakano et al. New Manufacturing Processes for a-Si Solar Cell Modules", 5th E.C. Photovoltaic Solar Energy Conference, Kavouri (Athen), Oktober 1983, Seiten 712 - 716, bekannt. Dort wird zur Herstellung einer Solarzelle auf einem Glassubstrat zunächst eine geschlossene Schicht aus einem transparenten, elektrisch leitenden Oxid (TCO) niedergeschlagen, welche als Frontseitenelektrode dienen soll.Such a method is from S. Nakano et al. New Manufacturing Processes for a-Si Solar Cell Modules ", 5th E.C. Photovoltaic Solar Energy Conference, Kavouri (Athens), October 1983, pages 712-716. There is used to manufacture a solar cell on a glass substrate first a closed layer of a transparent, electrically conductive oxide (TCO) deposited, which acts as a front side electrode should serve.
Anschließend wird diese Schicht dadurch strukturiert, daß in regelmäßigen Abständen parallele Bahnen durch Bestrahlung mit Laserlicht wieder entfernt werden. Auf die so strukturierte Oxidschicht wird eine geschlossene Siliziumschicht aufgebracht, die dann anschließend ebenfalls mit Laserlicht so bestrahlt wird, daß streifenförmige Bereiche der amorphen Siliziumschicht entfernt werden. In beiden Fällen wird das Laserlicht von der dem Glassubstrat abgewandten Seite her eingestrahlt. Als Laser wird, jedenfalls zur Bestrahlung der amorphen Siliziumschicht, ein YAG-Laser der Wellenlänge \= 1,06 Am verwendet. Dabei muß die Leistung des Laserstrahles genau auf die Dicke der amorphen Siliziumschicht abgestellt sein. Nach der geschilderten Bestrahlung der amorphen Siliziumschicht liegt eine Struktur vor, bei der auf dem Glassubstrat mit Abstand zueinander parallele Oxidstreifen angeordnet sind, auf denen wiederum parallele Schichtstreifen aus amorphem Silizium liegen, die quer zur Streifenrichtung so weit verschoben sind, daß das Glas in den Lücken zwischen den Oxidstreifen teilweise und ebenso die Oxidstreifen selbst teilweise freiliegen. Anschließend wird auf diese Struktur noch eine Metallschicht aufgebracht, die dann ebenfalls durch Laserbestrahlung strukturiert wird, um als Rückseitenelektrode dienen zu können.Subsequently, this layer is structured that in regular Distance parallel tracks can be removed again by irradiation with laser light. A closed silicon layer is applied to the oxide layer structured in this way, which is then also subsequently irradiated with laser light in such a way that it is strip-shaped Areas of the amorphous silicon layer are removed. In both cases it will Laser light is irradiated from the side facing away from the glass substrate. As a laser is, at least for irradiating the amorphous silicon layer, a YAG laser Wavelength = 1.06 Am used. The power of the laser beam must be accurate be adjusted to the thickness of the amorphous silicon layer. According to the described Irradiation of the amorphous silicon layer is a structure in which on the Glass substrate are arranged at a distance from one another parallel oxide strips which in turn have parallel stripes of amorphous layer Silicon lying, which are shifted so far transversely to the direction of the strip that the glass in the gaps between the oxide strips partially and also partially the oxide strips themselves exposed. A metal layer is then applied to this structure, which is then also structured by laser irradiation to act as a back electrode to be able to serve.
Bei der Bestrahlung der Oxid- sowie der amorphen Siliziumschicht mit Laserlicht von der dem Glassubstrat abgewandten Seite her ergibt sich nun der Nachteil, daß das durch die Bestrahlung verdampfende Oxid bzw.When irradiating the oxide and amorphous silicon layers with Laser light from the side facing away from the glass substrate now has the disadvantage that the oxide or oxide evaporated by the irradiation
Silizium gerade in eine Richtung entweichen will, die der Einstrahlungsrichtung des intensiven Laserlichtes entgegengerichtet ist. Dies führt dazu, daß Teile des verdampfenden Materials sich in der näheren Umgebung ganz unkontrolliert wieder niederschlagen können, wodurch die elektrischen Eigenschaften der so hergestellten Solarzelle beeinträchtigt werden können. So kann in den Randbereichen der amorphen Siliziumschicht, die im allgemeinen eine pin-Struktur aufweisen wird, das gewünschte Dotierungsprofil verwischt werden. Auch können unerwünschte Kurzschlüsse in den fertigen Solarzellen die Folge eines derartigen Herstellungsverfahrens sein.Silicon wants to escape in a direction that corresponds to the direction of irradiation of the intense laser light is opposite. This leads to parts of the evaporating material reappears in the immediate vicinity in an uncontrolled manner can precipitate, thereby reducing the electrical properties of the manufactured Solar cell can be affected. So can in the edge areas of the amorphous Silicon layer, which will generally have a pin structure, the desired Doping profile are blurred. Unwanted short circuits can also occur in the finished solar cells may be the result of such a manufacturing process.
Aufgabe der vorliegenden Erfindung ist es daher, ein Verfahren der eingangs genannten Art bereitzustellen, mit dem die gewünschte Schichtstruktur möglichst sauber und möglichst ohne Beeinträchtigung der angestrebten elektrooptischen Eigenschaften hergestellt werden kann.The object of the present invention is therefore to provide a method of to provide the type mentioned at the beginning with which the desired layer structure as possible clean and, if possible, without impairing the desired electro-optical properties can be produced.
Diese Aufgabe wird gemäß der Erfindung dadurch gelöst, daß mit dem Laserlicht von der Seite des transparenten Substrats her bestrahlt, zur Bestrahlung der Oxid- schicht Laserlicht einer Wellenlänge aus dem Absorptionsbereich der Oxidschicht und zur Bestrahlung der amorphen Halbleiterschicht Laserlicht einer Wellenlänge aus dem Absorptionsbereich der amorphen Halbleiterschicht gewählt wird.This object is achieved according to the invention in that with the Laser light irradiated from the side of the transparent substrate for irradiation the oxide layer laser light of a wavelength from the absorption range the oxide layer and laser light for irradiating the amorphous semiconductor layer Wavelength is selected from the absorption range of the amorphous semiconductor layer.
Der oben im Zusammenhang mit dem Stand der Technik geschilderte Nachteil wird demnach dadurch vermieden, daß das Laserlicht durch das transparente Substrat, welches Glas oder auch eine transparente Kunststoffschicht sein kann, hindurch eingestrahlt wird. Die Wellenlängen sind so zu wählen, daß in dem zu entfernenden Material jeweils möglichst optimal absorbiert wird, während bei der Entfernung der amorphen Halbleiterbereiche die eventuell darunterliegende Oxidschicht für die gewählte Wellenlänge transparent sein muß. Die gebräuchlichen Oxidschichten (TCO), wie beispielsweise Indiumoxid, Zinnoxid oder Mischungen hieraus (ITO) oder auch Zermetschichten, absorbieren vorwiegend im infraroten Spektralbereich, wo amorphes Silizium transparent ist, dessen Absorptionsbereich im sichtbaren, bei Wellenlängen unterhalb von ca. 6000 A liegt. Somit ist für die Bestrahlung einer Oxidschicht ein Infrarot-Laser und für die Bestrahlung einer amorphen Siliziumschicht ein Laser zu wählen, dessen Grundwelle in dem angegebenen sichtbaren Wellenlängenbereich liegt.The disadvantage described above in connection with the prior art is therefore avoided in that the laser light through the transparent substrate, which can be glass or a transparent plastic layer, irradiated through will. The wavelengths are to be chosen so that in each case in the material to be removed is absorbed as optimally as possible, while removing the amorphous semiconductor areas the possibly underlying oxide layer is transparent for the selected wavelength have to be. The common oxide layers (TCO), such as indium oxide, Tin oxide or mixtures thereof (ITO) or also Zermetschichten, mainly absorb in the infrared spectral range, where amorphous silicon is transparent, its absorption range in the visible, at wavelengths below approx. 6000 A. Thus, for the Irradiation of an oxide layer an infrared laser and for the irradiation of an amorphous one Silicon layer to choose a laser whose fundamental wave is visible in the specified Wavelength range.
Durch die Bestrahlung von der Seite des transparenten Substrats her wird erreicht, daß das Material in den bestrahlten Bereichen sehr sauber entfernt wird. Bei intensiver Einstrahlung können die zuerst getroffenen und erhitzten Schichtbereiche sogar verdampfen und das darüberliegende Material regelrecht abspringen, und dies auf eine geometrisch sehr saubere Weise. Bei Bestrahlung der amorphen Siliziumschicht kann insbesondere etwa eingebauter Wasserstoff schnell in die Dampfphase übergehen, wodurch das Abtrennen des zu entfernenden Materials beschleunigt wird.By irradiating from the side of the transparent substrate it is achieved that the material is removed very cleanly in the irradiated areas will. In the case of intense radiation, the areas of the layer that are hit and heated first can be even evaporate and the overlying material literally pop off, and this in a geometrically very neat way. When the amorphous silicon layer is irradiated can in particular, for example, built-in hydrogen quickly turns into the vapor phase pass over, whereby the separation of the material to be removed is accelerated.
Die Wahl der besonderen Wellenlängenbereiche hängt natürlich unmittelbar damit zusammen, daß die Einstrahlung nunmehr von der Seite des transparenten Substrats her vorgenommen wird. Beim Bestrahlen der auf die strukturierte Oxidschicht aufgebrachten amorphen Halbleiterschicht, bei der es sich auch um eine im wesentlichen Germanium enthaltende Schicht handeln kann, muß nämlich teilweise durch noch stehengebliebene Oxidbereiche hindurchgestrahlt werden, ohne daß diese hierdurch beschädigt werden dürfen. Deswegen muß nun ein Wellenlängenbereich ausgewählt werden, für den die Oxidschicht transparent ist.The choice of the particular wavelength ranges depends, of course, directly together with the fact that the radiation is now from the side of the transparent substrate is made ago. When irradiating the applied to the structured oxide layer amorphous semiconductor layer, which is also essentially a germanium containing layer can act, namely must partly through still standing Oxide areas are radiated through without damaging them to be allowed to. Therefore, a wavelength range must now be selected for which the Oxide layer is transparent.
Als besonders vorteilhaft erweist es sich, einen YAG-Laser zu verwenden, wie auch schon bei dem bekannten Verfahren. Während jedoch dort die Grundwelle mit einer Wellenlänge von h 1,06#m zur Bestrahlung der amorphen Siliziumschicht verwendet wird und offen bleibt, mit welcher Art Laserlicht die Oxidschicht strukturiert wird, soll nunmehr für die Strukturierung beider Schichten derselbe YAG-Laser verwendet werden, wobei die Oxidschicht nun aber mit der Grundwelle ( XTCO = 1,06 Wm) und die amorphe Siliziumschicht mit deren 1. Harmonischer (\ a Si = 053 wem) zu bestrahlen ist. Die 1. Harmonische wird hierbei durch Zwischenschaltung eines gebräuchlichen Frequenzverdopplerkristalls gewonnen. Es braucht für beide Bestrahlungsvorgänge demnach nur ein einziger Laser verwendet zu werden, bzw. zwei Laser derselben Sorte oder ein Laser mit Strahlteiler.It proves to be particularly advantageous to use a YAG laser, as with the known method. However, while there the fundamental wave with a wavelength of h 1.06 # m is used to irradiate the amorphous silicon layer and it remains open with which type of laser light the oxide layer is structured, The same YAG laser is now to be used for structuring both layers but the oxide layer is now with the fundamental wave (XTCO = 1.06 Wm) and to irradiate the amorphous silicon layer with its 1st harmonic (\ a Si = 053 whom) is. The 1st harmonic is used by interposing a Frequency doubler crystal won. It takes irradiation processes for both therefore only a single laser to be used, or two lasers of the same type or a laser with a beam splitter.
Im folgenden wird die Erfindung anhand der Abbildungen näher erläutert. Es zeigen in schematischer Weise: Fig.1 im Querschnitt ein Glassubstrat mit einer TCO-Schicht, Fig.2 im Querschnitt die Struktur der Fig.1 nach der ersten Laserbestrahlung, Fig.3 die Struktur der Fig.2 nach Aufbringen einer amorphen Siliziumschicht, Fig.4 die Struktur der Fig.3 nach der zweiten Laserbestrahlung, Fig.5 die Struktur der Fig.4 nach Aufbringen einer metallischen Elektrodenschicht, Fig.6 die Struktur der Fig.5 nach Strukturierung der Metallschicht.The invention is explained in more detail below with reference to the figures. They show in a schematic manner: FIG. 1, in cross section, a glass substrate with a TCO layer, FIG. 2 in cross section the structure of FIG. 1 after the first laser irradiation, 3 shows the structure of FIG. 2 after application of an amorphous silicon layer, FIG. 4 the structure of FIG. 3 after the second laser irradiation, FIG. 5 the structure of FIG. 4 after application of a metallic electrode layer, FIG. 6 the structure of the 5 after structuring the metal layer.
Fig.1 zeigt ein sowohl für sichtbares als auch infrarotes Licht transparentes Glassubstrat 1 mit einer darauf aufgebrachten transparenten Oxidschicht 2 (TCO), beispielsweise aus Indium-Zinn-Oxid (ITO) bestehend.1 shows a light that is transparent to both visible and infrared light Glass substrate 1 with a transparent oxide layer 2 (TCO) applied thereon, for example consisting of indium tin oxide (ITO).
Nach Bestrahlung mit einem intensiven Infrarot-Laserstrahl sind streifenförmige Bereiche 4 aus der das infrarote Licht absorbierenden, jedoch für sichtbares Licht transparenten Oxidschicht 2 entfernt, siehe Fig.2 Nach anschließendem Aufbringen einer amorphen Siliziumschicht, beispielsweise durch Abscheiden aus einer Silanatmosphäre mittels Glimmentladung, entsteht die in Fig.3 wiedergegebene Struktur, bei der über der strukturierten Oxidschicht 2 eine geschlossene amorphe Siliziumschicht 3 liegt. Durch nochmaliges Bestrahlen ebenfalls durch das Glassubstrat 1 hindurch, mit einem intensiven Laserstrahl einer unterhalb von 6000 Å liegenden Wellenlänge ist die in Fig.4 gezeigte Struktur erzeugbar, bei der nunmehr die amorphe Siliziumschicht 3 in streifenförmigen, sich senkrecht zur Zeichenebene erstreckenden Bereichen entfernt ist. Hierbei wurde in Bereichen 5 durch das für sichtbares Licht transparente Oxid hindurchgestrahlt, dort das amorphe Silizium entfernt, ohne die durchstrahlte Oxidschicht zu beschädigen.After exposure to an intense infrared laser beam, they are strip-shaped Areas 4 from which the infrared light absorbs, but for visible light transparent oxide layer 2 removed, see Fig. 2 After subsequent application an amorphous silicon layer, for example by deposition from a silane atmosphere by means of a glow discharge, the structure shown in FIG the structured oxide layer 2 is a closed amorphous silicon layer 3. By irradiating again also through the glass substrate 1 through it, with an intense laser beam below 6000 Å Wavelength, the structure shown in Figure 4 can be generated, in which now the amorphous Silicon layer 3 in strip-shaped, extending perpendicular to the plane of the drawing Areas away. This was done in areas 5 by the for visible light transparent oxide radiated through, the amorphous silicon removed there without the to damage irradiated oxide layer.
Selbstverständlich kann die gemäß Fig.3 aufgebrachte amorphe Siliziumschicht das gewünschte Dotierungsprofil, beispielsweise im Sinne einer pin- oder einer nip-Struktur, aufweisen.Of course, the amorphous silicon layer applied according to FIG the desired doping profile, for example in the sense of a pin or a nip structure, exhibit.
Im Anschluß an die Strukturierung der amorphen Siliziumschicht gemäß Fig.4 kann auf übliche Weise eine später als rückwärtige Elektrodenschicht dienende Metallschicht 6 aufgebracht werden, siehe Fig.5, welche dann beispielsweise ebenfalls durch Laserbestrahlung so strukturiert werden kann, aaß die in Fig.6 wiedergegebene Reihenschaltung streifenförmiger Solarzellen entsteht.Following the structuring of the amorphous silicon layer according to FIG FIG. 4 can be used in the usual way to later serve as a rear electrode layer Metal layer 6 are applied, see Figure 5, which then also, for example can be structured by laser irradiation in such a way that the one shown in FIG Series connection of strip-shaped solar cells is created.
Das erfindungsgemäße Verfahren kann nicht nur zur Herstellung von Solarzellen verwendet werden, sondern beispielsweise auch zur Herstellung von optischen Bildsensoren auf der Basis von amorphen Halbleitern, beispielsweise Silizium.The inventive method can not only for the production of Solar cells are used, but also, for example, for the production of optical Image sensors based on amorphous semiconductors, for example silicon.
Claims (3)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19853508469 DE3508469A1 (en) | 1985-03-09 | 1985-03-09 | Process for patterning layer sequences applied to a transparent substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19853508469 DE3508469A1 (en) | 1985-03-09 | 1985-03-09 | Process for patterning layer sequences applied to a transparent substrate |
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| Publication Number | Publication Date |
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| DE3508469A1 true DE3508469A1 (en) | 1986-09-11 |
| DE3508469C2 DE3508469C2 (en) | 1987-08-13 |
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| Application Number | Title | Priority Date | Filing Date |
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| DE19853508469 Granted DE3508469A1 (en) | 1985-03-09 | 1985-03-09 | Process for patterning layer sequences applied to a transparent substrate |
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Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3816660C1 (en) * | 1988-05-17 | 1989-09-07 | Messerschmitt-Boelkow-Blohm Gmbh, 8012 Ottobrunn, De | Sensor, especially photodetector arrangement |
| US5173446A (en) * | 1988-06-28 | 1992-12-22 | Ricoh Company, Ltd. | Semiconductor substrate manufacturing by recrystallization using a cooling medium |
| US5310446A (en) * | 1990-01-10 | 1994-05-10 | Ricoh Company, Ltd. | Method for producing semiconductor film |
| US5459346A (en) * | 1988-06-28 | 1995-10-17 | Ricoh Co., Ltd. | Semiconductor substrate with electrical contact in groove |
| WO1997027727A1 (en) * | 1996-01-26 | 1997-07-31 | Emi-Tec Elektronische Materialien Gmbh | Process for producing a conductor structure |
| WO1998014986A1 (en) * | 1996-10-01 | 1998-04-09 | Siemens Aktiengesellschaft | Method for separating two material layers and electronic components produced therewith |
| WO2005093470A1 (en) * | 2004-03-27 | 2005-10-06 | Laser-Laboratorium Göttingen e.V. | Method for the production of an optical component by means of surface-structuring laser machining |
| US7202141B2 (en) | 2004-03-29 | 2007-04-10 | J.P. Sercel Associates, Inc. | Method of separating layers of material |
| US7691659B2 (en) | 2000-04-26 | 2010-04-06 | Osram Gmbh | Radiation-emitting semiconductor element and method for producing the same |
| GB2472613A (en) * | 2009-08-11 | 2011-02-16 | M Solv Ltd | Capacitive touch panels |
| US7939844B2 (en) | 2000-05-26 | 2011-05-10 | Osram Gmbh | Light-emitting-diode chip comprising a sequence of GAN-based epitaxial layers which emit radiation and a method for producing the same |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3727825A1 (en) * | 1987-08-20 | 1989-03-02 | Siemens Ag | Series-connected thin-film solar module made from crystalline silicon |
| DE3727826A1 (en) * | 1987-08-20 | 1989-03-02 | Siemens Ag | SERIES-CONNECTED THIN-LAYER SOLAR MODULE MADE OF CRYSTAL SILICON |
| DE3921038C2 (en) * | 1988-06-28 | 1998-12-10 | Ricoh Kk | Method for producing a semiconductor substrate or solid structure |
| DE4022745A1 (en) * | 1990-07-18 | 1992-01-23 | Hans Lang Gmbh & Co Kg Ing | Mirror patterning - uses laser beam directed through glass pane to evaporate the reflection layer partially |
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| DE19619317C2 (en) * | 1996-05-14 | 2000-10-05 | Voith Hydro Gmbh | Impeller for an open jet tube |
| DE10051465A1 (en) | 2000-10-17 | 2002-05-02 | Osram Opto Semiconductors Gmbh | Method for producing a GaN-based semiconductor component |
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1985
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| DE3816660C1 (en) * | 1988-05-17 | 1989-09-07 | Messerschmitt-Boelkow-Blohm Gmbh, 8012 Ottobrunn, De | Sensor, especially photodetector arrangement |
| US5173446A (en) * | 1988-06-28 | 1992-12-22 | Ricoh Company, Ltd. | Semiconductor substrate manufacturing by recrystallization using a cooling medium |
| US5459346A (en) * | 1988-06-28 | 1995-10-17 | Ricoh Co., Ltd. | Semiconductor substrate with electrical contact in groove |
| US5565697A (en) * | 1988-06-28 | 1996-10-15 | Ricoh Company, Ltd. | Semiconductor structure having island forming grooves |
| US5310446A (en) * | 1990-01-10 | 1994-05-10 | Ricoh Company, Ltd. | Method for producing semiconductor film |
| WO1997027727A1 (en) * | 1996-01-26 | 1997-07-31 | Emi-Tec Elektronische Materialien Gmbh | Process for producing a conductor structure |
| US6974758B2 (en) | 1996-10-01 | 2005-12-13 | Siemens Aktiengesellschaft | Method of producing a light-emitting diode |
| US7341925B2 (en) | 1996-10-01 | 2008-03-11 | Osram Gmbh | Method for transferring a semiconductor body from a growth substrate to a support material |
| US6740604B2 (en) | 1996-10-01 | 2004-05-25 | Siemens Aktiengesellschaft | Method of separating two layers of material from one another |
| US7713840B2 (en) | 1996-10-01 | 2010-05-11 | Osram Gmbh | Electronic components produced by a method of separating two layers of material from one another |
| WO1998014986A1 (en) * | 1996-10-01 | 1998-04-09 | Siemens Aktiengesellschaft | Method for separating two material layers and electronic components produced therewith |
| US6559075B1 (en) | 1996-10-01 | 2003-05-06 | Siemens Aktiengesellschaft | Method of separating two layers of material from one another and electronic components produced using this process |
| US7691659B2 (en) | 2000-04-26 | 2010-04-06 | Osram Gmbh | Radiation-emitting semiconductor element and method for producing the same |
| US7939844B2 (en) | 2000-05-26 | 2011-05-10 | Osram Gmbh | Light-emitting-diode chip comprising a sequence of GAN-based epitaxial layers which emit radiation and a method for producing the same |
| EP2003474A3 (en) * | 2004-03-27 | 2008-12-24 | Laser-Laboratorium Göttingen E.V. | Method for structuring the surface of an optical component using laser machining |
| WO2005093470A1 (en) * | 2004-03-27 | 2005-10-06 | Laser-Laboratorium Göttingen e.V. | Method for the production of an optical component by means of surface-structuring laser machining |
| US7241667B2 (en) | 2004-03-29 | 2007-07-10 | J.P. Sercel Associates, Inc. | Method of separating layers of material |
| US7202141B2 (en) | 2004-03-29 | 2007-04-10 | J.P. Sercel Associates, Inc. | Method of separating layers of material |
| GB2472613A (en) * | 2009-08-11 | 2011-02-16 | M Solv Ltd | Capacitive touch panels |
| GB2472613B (en) * | 2009-08-11 | 2015-06-03 | M Solv Ltd | Capacitive touch panels |
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| DE3508469C2 (en) | 1987-08-13 |
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