DE3574418D1 - Pattern-forming material and its production and use - Google Patents

Pattern-forming material and its production and use

Info

Publication number
DE3574418D1
DE3574418D1 DE8585303811T DE3574418T DE3574418D1 DE 3574418 D1 DE3574418 D1 DE 3574418D1 DE 8585303811 T DE8585303811 T DE 8585303811T DE 3574418 T DE3574418 T DE 3574418T DE 3574418 D1 DE3574418 D1 DE 3574418D1
Authority
DE
Germany
Prior art keywords
pattern
production
forming material
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8585303811T
Other languages
English (en)
Inventor
Shun-Ichi Fukuyama
Yasuhiro Yoneda
Masashi Miyagawa
Kota Nishii
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP59108521A external-priority patent/JPS60254036A/ja
Priority claimed from JP59109503A external-priority patent/JPS60254132A/ja
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Application granted granted Critical
Publication of DE3574418D1 publication Critical patent/DE3574418D1/de
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/942—Masking
    • Y10S438/948—Radiation resist
DE8585303811T 1984-05-30 1985-05-30 Pattern-forming material and its production and use Expired DE3574418D1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP59108521A JPS60254036A (ja) 1984-05-30 1984-05-30 パタ−ン形成方法
JP59109503A JPS60254132A (ja) 1984-05-31 1984-05-31 パタ−ン形成材料

Publications (1)

Publication Number Publication Date
DE3574418D1 true DE3574418D1 (en) 1989-12-28

Family

ID=26448377

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8585303811T Expired DE3574418D1 (en) 1984-05-30 1985-05-30 Pattern-forming material and its production and use

Country Status (4)

Country Link
US (2) US4657843A (de)
EP (1) EP0163538B1 (de)
KR (1) KR900002364B1 (de)
DE (1) DE3574418D1 (de)

Families Citing this family (57)

* Cited by examiner, † Cited by third party
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US4670299A (en) * 1984-11-01 1987-06-02 Fujitsu Limited Preparation of lower alkyl polysilsesquioxane and formation of insulating layer of silylated polymer on electronic circuit board
JPS61144639A (ja) * 1984-12-19 1986-07-02 Hitachi Ltd 放射線感応性組成物及びそれを用いたパタ−ン形成法
EP0215069B1 (de) * 1985-03-07 1991-04-10 Hughes Aircraft Company Polysiloxanschutzlack für ionen- und elektronenstrahl-lithographie
FR2593953B1 (fr) * 1986-01-24 1988-04-29 Commissariat Energie Atomique Procede de fabrication d'un dispositif de visualisation par cathodoluminescence excitee par emission de champ
DE3760030D1 (en) * 1986-02-07 1989-02-02 Nippon Telegraph & Telephone Photosensitive and high energy beam sensitive resin composition containing substituted polysiloxane
EP0255303B1 (de) * 1986-07-25 1989-10-11 Oki Electric Industry Company, Limited Negatives Resistmaterial, Methode zu seiner Herstellung und Methode zu seiner Verwendung
US4764247A (en) * 1987-03-18 1988-08-16 Syn Labs, Inc. Silicon containing resists
US4818732A (en) * 1987-03-19 1989-04-04 The Standard Oil Company High surface area ceramics prepared from organosilane gels
JPH01118126A (ja) * 1987-10-31 1989-05-10 Fujitsu Ltd パターン形成方法
JP2608429B2 (ja) * 1987-11-09 1997-05-07 東レ・ダウコーニング・シリコーン株式会社 パターン形成用材料およびパターン形成方法
EP0345534A1 (de) * 1988-05-25 1989-12-13 Toray Silicone Company, Limited Chloromethylgruppen enthaltende Polyorganosiloxane
US5057396A (en) * 1988-09-22 1991-10-15 Tosoh Corporation Photosensitive material having a silicon-containing polymer
JP2737225B2 (ja) * 1989-03-27 1998-04-08 松下電器産業株式会社 微細パターン形成材料およびパターン形成方法
US5110711A (en) * 1989-10-10 1992-05-05 International Business Machines Corporation Method for forming a pattern
US5098816A (en) * 1989-10-10 1992-03-24 International Business Machines Corporation Method for forming a pattern of a photoresist
US5059512A (en) * 1989-10-10 1991-10-22 International Business Machines Corporation Ultraviolet light sensitive photoinitiator compositions, use thereof and radiation sensitive compositions
US5115095A (en) * 1989-10-10 1992-05-19 International Business Machines Corporation Epoxy functional organosilicon polymer
US5252430A (en) * 1989-10-25 1993-10-12 Matsushita Electric Industrial Co., Ltd. Fine pattern forming method
EP0432905B1 (de) * 1989-11-15 1998-02-04 Fujitsu Limited Polysilphenylensiloxan, Verfahren zu deren Herstellung, Resistmasse und Halbleitervorrichtungen
FR2656617A1 (fr) * 1989-12-28 1991-07-05 Thomson Csf Procede de synthese de polysilsesquioxanes et applications des produits contenus.
JP2646289B2 (ja) * 1990-06-01 1997-08-27 富士写真フイルム株式会社 レジスト組成物
JP2928341B2 (ja) * 1990-07-03 1999-08-03 三菱電機株式会社 シリコーンラダー系樹脂塗布液組成物
US5689428A (en) 1990-09-28 1997-11-18 Texas Instruments Incorporated Integrated circuits, transistors, data processing systems, printed wiring boards, digital computers, smart power devices, and processes of manufacture
JP2752786B2 (ja) * 1990-11-19 1998-05-18 三菱電機株式会社 カラーフィルターの表面保護膜
JPH04330709A (ja) * 1991-04-25 1992-11-18 Matsushita Electric Ind Co Ltd 微細パターン形成材料およびパターン形成方法
US5260172A (en) * 1991-12-17 1993-11-09 International Business Machines Corporation Multilayer photoresist comprising poly-(vinylbenzoic acid) as a planarizing layer
US5338818A (en) * 1992-09-10 1994-08-16 International Business Machines Corporation Silicon containing positive resist for DUV lithography
US5567550A (en) * 1993-03-25 1996-10-22 Texas Instruments Incorporated Method of making a mask for making integrated circuits
KR0140472B1 (ko) * 1994-10-12 1998-06-15 김주용 감광막 패턴 형성방법
US5738976A (en) * 1995-03-16 1998-04-14 Shin-Etsu Chemical Co., Ltd. Photo-curable organopolysiloxane composition and a method for producing a (meth) acryloyloxyl group-containing organopolysiloxane used therein
TW434458B (en) * 1995-04-04 2001-05-16 Shinetsu Chemical Co Chemically amplified positive resist compositions
JP2697680B2 (ja) * 1995-05-31 1998-01-14 日本電気株式会社 珪素含有高分子化合物および感光性樹脂組成物
US5958630A (en) * 1997-12-30 1999-09-28 Kabushiki Kaisha Toshiba Phase shifting mask and method of manufacturing the same
US6087064A (en) * 1998-09-03 2000-07-11 International Business Machines Corporation Silsesquioxane polymers, method of synthesis, photoresist composition, and multilayer lithographic method
KR100804873B1 (ko) * 1999-06-10 2008-02-20 얼라이드시그날 인코퍼레이티드 포토리소그래피용 ｓｏｇ 반사방지 코팅
US6368400B1 (en) 2000-07-17 2002-04-09 Honeywell International Absorbing compounds for spin-on-glass anti-reflective coatings for photolithography
JP3920015B2 (ja) * 2000-09-14 2007-05-30 東京エレクトロン株式会社 Ｓｉ基板の加工方法
JP3754337B2 (ja) * 2001-09-28 2006-03-08 株式会社クラレ 樹脂成形品の製造方法、樹脂成形品及び金型の製造方法
US8053159B2 (en) 2003-11-18 2011-11-08 Honeywell International Inc. Antireflective coatings for via fill and photolithography applications and methods of preparation thereof
KR100589123B1 (ko) * 2004-02-18 2006-06-14 학교법인 서강대학교 기공형성용 템플레이트로 유용한 사이클로덱스트린유도체와 이를 이용하여 제조된 저유전체
US7741003B2 (en) * 2004-03-30 2010-06-22 Hitachi Global Storage Technologies Netherlands B.V. Photoresist transfer pads
JP2007019161A (ja) * 2005-07-06 2007-01-25 Dainippon Screen Mfg Co Ltd パターン形成方法及び被膜形成装置
US7745339B2 (en) * 2006-02-24 2010-06-29 Hynix Semiconductor Inc. Method for forming fine pattern of semiconductor device
KR100694412B1 (ko) * 2006-02-24 2007-03-12 주식회사 하이닉스반도체 반도체소자의 미세패턴 형성방법
US8642246B2 (en) 2007-02-26 2014-02-04 Honeywell International Inc. Compositions, coatings and films for tri-layer patterning applications and methods of preparation thereof
KR100843552B1 (ko) * 2007-07-19 2008-07-04 한국전자통신연구원 나노 임프린트 공정을 이용한 나노 전극선 제조 방법
WO2009084775A1 (en) * 2007-12-28 2009-07-09 Seoul National University Industry Foundation Resist for e-beam lithography
US8557877B2 (en) 2009-06-10 2013-10-15 Honeywell International Inc. Anti-reflective coatings for optically transparent substrates
US8795952B2 (en) 2010-02-21 2014-08-05 Tokyo Electron Limited Line pattern collapse mitigation through gap-fill material application
US9333454B2 (en) 2011-01-21 2016-05-10 International Business Machines Corporation Silicone-based chemical filter and silicone-based chemical bath for removing sulfur contaminants
US8900491B2 (en) 2011-05-06 2014-12-02 International Business Machines Corporation Flame retardant filler
US8864898B2 (en) 2011-05-31 2014-10-21 Honeywell International Inc. Coating formulations for optical elements
US9186641B2 (en) 2011-08-05 2015-11-17 International Business Machines Corporation Microcapsules adapted to rupture in a magnetic field to enable easy removal of one substrate from another for enhanced reworkability
US8741804B2 (en) 2011-10-28 2014-06-03 International Business Machines Corporation Microcapsules adapted to rupture in a magnetic field
US9716055B2 (en) 2012-06-13 2017-07-25 International Business Machines Corporation Thermal interface material (TIM) with thermally conductive integrated release layer
WO2016167892A1 (en) 2015-04-13 2016-10-20 Honeywell International Inc. Polysiloxane formulations and coatings for optoelectronic applications
WO2021034567A1 (en) 2019-08-16 2021-02-25 Tokyo Electron Limited Method and process for stochastic driven defectivity healing

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5760330A (en) * 1980-09-27 1982-04-12 Fujitsu Ltd Resin composition
JPS57141642A (en) * 1981-02-26 1982-09-02 Fujitsu Ltd Formation of pattern
JPS57141641A (en) * 1981-02-26 1982-09-02 Fujitsu Ltd Formation of positive pattern
DE3139316A1 (de) * 1981-10-02 1983-04-21 Bayer Ag, 5090 Leverkusen Verfahren zur herstellung von polydiorganosiloxanen mit triorganosilylendgruppen
EP0076656B1 (de) * 1981-10-03 1988-06-01 Japan Synthetic Rubber Co., Ltd. In Lösungsmitteln lösliche Organopolysilsesquioxane, Verfahren zu ihrer Herstellung, Zusammensetzungen und Halbleitervorrichtungen, die diese verwenden
US4551417A (en) * 1982-06-08 1985-11-05 Nec Corporation Method of forming patterns in manufacturing microelectronic devices
JPS59347A (ja) * 1982-06-23 1984-01-05 Kuriintetsuku Kogyo:Kk 静電浄化機用の集塵装置

Also Published As

Publication number Publication date
US4863833A (en) 1989-09-05
EP0163538A3 (en) 1986-09-03
KR850008565A (ko) 1985-12-18
KR900002364B1 (ko) 1990-04-12
US4657843A (en) 1987-04-14
EP0163538B1 (de) 1989-11-23
EP0163538A2 (de) 1985-12-04

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee