DE3650287D1 - Halbleiter-Photodetektor mit einem zweistufigen Verunreinigungsprofil. - Google Patents

Halbleiter-Photodetektor mit einem zweistufigen Verunreinigungsprofil.

Info

Publication number
DE3650287D1
DE3650287D1 DE3650287T DE3650287T DE3650287D1 DE 3650287 D1 DE3650287 D1 DE 3650287D1 DE 3650287 T DE3650287 T DE 3650287T DE 3650287 T DE3650287 T DE 3650287T DE 3650287 D1 DE3650287 D1 DE 3650287D1
Authority
DE
Germany
Prior art keywords
semiconductor photodetector
contamination profile
stage contamination
stage
profile
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE3650287T
Other languages
English (en)
Other versions
DE3650287T2 (de
Inventor
Fumihiko C O Patent Div Kuroda
Tetsuo C O Patent Div Sadamasa
Nobuo C O Patent Divisi Suzuki
Masaru C O Patent Div Nakamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP60210419A external-priority patent/JPS6269689A/ja
Priority claimed from JP60208808A external-priority patent/JPS6269688A/ja
Priority claimed from JP60271568A external-priority patent/JPS62132375A/ja
Application filed by Toshiba Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE3650287D1 publication Critical patent/DE3650287D1/de
Publication of DE3650287T2 publication Critical patent/DE3650287T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/2654—Bombardment with radiation with high-energy radiation producing ion implantation in AIIIBV compounds
    • H01L21/26546—Bombardment with radiation with high-energy radiation producing ion implantation in AIIIBV compounds of electrically active species
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
    • H01L31/105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PIN type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
    • H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier working in avalanche mode, e.g. avalanche photodiode
    • H01L31/1075—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier working in avalanche mode, e.g. avalanche photodiode in which the active layers, e.g. absorption or multiplication layers, form an heterostructure, e.g. SAM structure
DE3650287T 1985-09-24 1986-09-10 Halbleiter-Photodetektor mit einem zweistufigen Verunreinigungsprofil. Expired - Lifetime DE3650287T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP60210419A JPS6269689A (ja) 1985-09-24 1985-09-24 半導体受光素子
JP60208808A JPS6269688A (ja) 1985-09-24 1985-09-24 半導体受光素子
JP60271568A JPS62132375A (ja) 1985-12-04 1985-12-04 半導体受光素子及びその製造方法

Publications (2)

Publication Number Publication Date
DE3650287D1 true DE3650287D1 (de) 1995-05-11
DE3650287T2 DE3650287T2 (de) 1995-08-10

Family

ID=27328930

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3650287T Expired - Lifetime DE3650287T2 (de) 1985-09-24 1986-09-10 Halbleiter-Photodetektor mit einem zweistufigen Verunreinigungsprofil.

Country Status (3)

Country Link
US (1) US4949144A (de)
EP (1) EP0216572B1 (de)
DE (1) DE3650287T2 (de)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5179430A (en) * 1988-05-24 1993-01-12 Nec Corporation Planar type heterojunction avalanche photodiode
GB8817886D0 (en) * 1988-07-27 1988-09-01 British Telecomm Avalanche photodiode structure
EP0444963B1 (de) * 1990-03-02 1997-09-17 Canon Kabushiki Kaisha Fotoelektrische Übertragungsvorrichtung
US5260560A (en) * 1990-03-02 1993-11-09 Canon Kabushiki Kaisha Photoelectric transfer device
JPH04111477A (ja) * 1990-08-31 1992-04-13 Sumitomo Electric Ind Ltd 受光素子
US5412229A (en) * 1990-08-31 1995-05-02 Sumitomo Electric Industries, Ltd. Semiconductor light detecting device making use of a photodiode chip
US5414442A (en) * 1991-06-14 1995-05-09 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method of driving the same
JP3047385B2 (ja) * 1991-10-25 2000-05-29 住友電気工業株式会社 受光素子
JPH05235396A (ja) * 1992-02-24 1993-09-10 Sumitomo Electric Ind Ltd 半導体受光装置
US5247876A (en) * 1993-01-25 1993-09-28 Wilson Mark L Deep fryer and filtration system
FR2714200B1 (fr) * 1993-11-25 1996-12-27 Fujitsu Ltd Dispositif à onde acoustique de surface et son procédé de fabrication.
US5596186A (en) * 1993-12-08 1997-01-21 Nikon Corporation High sensitivity silicon avalanche photodiode
CA2307745A1 (en) * 1999-07-15 2001-01-15 Sumitomo Electric Industries, Ltd. Photodiode
US6359293B1 (en) * 1999-08-17 2002-03-19 Agere Systems Guardian Corp. Integrated optoelectronic device with an avalanche photodetector and method of making the same using commercial CMOS processes
US6566722B1 (en) * 2002-06-26 2003-05-20 United Microelectronics Corp. Photo sensor in a photo diode on a semiconductor wafer
US6730979B2 (en) 2002-09-12 2004-05-04 The Boeing Company Recessed p-type region cap layer avalanche photodiode
US6838741B2 (en) 2002-12-10 2005-01-04 General Electtric Company Avalanche photodiode for use in harsh environments
US6972582B2 (en) * 2003-02-10 2005-12-06 Solid State Measurements, Inc. Apparatus and method for measuring semiconductor wafer electrical properties
DE10331387A1 (de) * 2003-07-11 2005-01-27 Continental Aktiengesellschaft Passive Klemmung von Luftfederbälgen und Schläuchen
JP3956923B2 (ja) * 2003-09-19 2007-08-08 住友電気工業株式会社 アバランシェフォトダイオードのバイアス電圧制御回路
CN100557826C (zh) * 2004-10-25 2009-11-04 三菱电机株式会社 雪崩光电二极管
JP2011035018A (ja) * 2009-07-30 2011-02-17 Renesas Electronics Corp 半導体受光素子
JP5560818B2 (ja) 2010-03-25 2014-07-30 住友電気工業株式会社 受光素子、受光素子アレイ、ハイブリッド型検出装置、光学センサ装置
CN102800717B (zh) * 2012-08-30 2015-04-22 中山大学 一种pin结构紫外雪崩光电探测器及其制备方法
US8963274B2 (en) * 2013-03-15 2015-02-24 Sensors Unlimited, Inc. Epitaxial structure for vertically integrated charge transfer gate technology in optoelectronic materials
EP3050128A4 (de) * 2013-09-25 2017-04-05 Princeton Infrared Technologies, Inc. Rauscharmes ingaas-fotodiodenarray
EP3821473B1 (de) * 2018-07-12 2023-07-05 Shenzhen Xpectvision Technology Co., Ltd. Bildsensoren mit silbernanopartikelelektroden

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3497776A (en) * 1968-03-06 1970-02-24 Westinghouse Electric Corp Uniform avalanche-breakdown rectifiers
US4153904A (en) * 1977-10-03 1979-05-08 Texas Instruments Incorporated Semiconductor device having a high breakdown voltage junction characteristic
JPS5513957A (en) * 1978-07-17 1980-01-31 Nec Corp Semiconductor device
US4328508A (en) * 1979-04-02 1982-05-04 Rca Corporation III-V Quaternary alloy photodiode
US4258375A (en) * 1979-04-09 1981-03-24 Massachusetts Institute Of Technology Gax In1-x Asy P1-y /InP Avalanche photodiode and method for its fabrication
US4400221A (en) * 1981-07-08 1983-08-23 The United States Of America As Represented By The Secretary Of The Air Force Fabrication of gallium arsenide-germanium heteroface junction device
JPS5853867A (ja) * 1981-09-26 1983-03-30 Fujitsu Ltd 半導体受光素子
JPS59106165A (ja) * 1982-12-10 1984-06-19 Fujitsu Ltd 半導体受光装置の製造方法
JPS60178673A (ja) * 1984-02-24 1985-09-12 Nec Corp アバランシフオトダイオ−ド
US4651187A (en) * 1984-03-22 1987-03-17 Nec Corporation Avalanche photodiode
JPS611064A (ja) * 1984-05-31 1986-01-07 Fujitsu Ltd 半導体受光装置

Also Published As

Publication number Publication date
DE3650287T2 (de) 1995-08-10
EP0216572B1 (de) 1995-04-05
US4949144A (en) 1990-08-14
EP0216572A3 (en) 1989-07-19
EP0216572A2 (de) 1987-04-01

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8320 Willingness to grant licences declared (paragraph 23)