DE3681696D1 - Verfahren zum entfernen von hoeckern einer oberflaeche eines halbleiterkoerpers mittels eines mechano-chemischen polierverfahrens. - Google Patents

Verfahren zum entfernen von hoeckern einer oberflaeche eines halbleiterkoerpers mittels eines mechano-chemischen polierverfahrens.

Info

Publication number
DE3681696D1
DE3681696D1 DE8686110462T DE3681696T DE3681696D1 DE 3681696 D1 DE3681696 D1 DE 3681696D1 DE 8686110462 T DE8686110462 T DE 8686110462T DE 3681696 T DE3681696 T DE 3681696T DE 3681696 D1 DE3681696 D1 DE 3681696D1
Authority
DE
Germany
Prior art keywords
mechano
semiconductor body
chemical polishing
removing bumps
polishing method
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8686110462T
Other languages
English (en)
Inventor
Klaus Dietrich Beyer
James Steve Makris
Eric Mendel
Karen Ann Nummy
Seiki Ogura
Jacob Riseman
Nivo Rovedo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of DE3681696D1 publication Critical patent/DE3681696D1/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/763—Polycrystalline semiconductor regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
    • H01L21/743—Making of internal connections, substrate contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
DE8686110462T 1985-10-28 1986-07-29 Verfahren zum entfernen von hoeckern einer oberflaeche eines halbleiterkoerpers mittels eines mechano-chemischen polierverfahrens. Expired - Fee Related DE3681696D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/791,861 US4671851A (en) 1985-10-28 1985-10-28 Method for removing protuberances at the surface of a semiconductor wafer using a chem-mech polishing technique

Publications (1)

Publication Number Publication Date
DE3681696D1 true DE3681696D1 (de) 1991-10-31

Family

ID=25155005

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8686110462T Expired - Fee Related DE3681696D1 (de) 1985-10-28 1986-07-29 Verfahren zum entfernen von hoeckern einer oberflaeche eines halbleiterkoerpers mittels eines mechano-chemischen polierverfahrens.

Country Status (5)

Country Link
US (1) US4671851A (de)
EP (1) EP0224646B1 (de)
JP (1) JPS62101034A (de)
CA (1) CA1273274A (de)
DE (1) DE3681696D1 (de)

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JPS62101034A (ja) 1987-05-11
EP0224646B1 (de) 1991-09-25
US4671851A (en) 1987-06-09
EP0224646A2 (de) 1987-06-10
JPH0311091B2 (de) 1991-02-15
EP0224646A3 (en) 1988-09-07
CA1273274A (en) 1990-08-28

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