DE3682236D1 - Trommelstruktur fuer halbleiter epitaxiereaktor. - Google Patents

Trommelstruktur fuer halbleiter epitaxiereaktor.

Info

Publication number: DE3682236D1
Authority: DE; Germany
Prior art keywords: epitaxis; reactor; semiconductor; drum structure; drum
Prior art date: 1985-07-22
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Fee Related

Application number

DE8686109997T

Other languages

English (en)

Inventor

Robert C Post

Kevin N Bordelon

Burl M Moon

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

MTC ACQUISITION CORP CARBO

Original Assignee

MTC ACQUISITION CORP CARBO

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1985-07-22

Filing date

1986-07-21

Publication date

1991-12-05

1986-07-21 Application filed by MTC ACQUISITION CORP CARBO filed Critical MTC ACQUISITION CORP CARBO

1991-12-05 Application granted granted Critical

1991-12-05 Publication of DE3682236D1 publication Critical patent/DE3682236D1/de

2006-07-22 Anticipated expiration legal-status Critical

Status Expired - Fee Related legal-status Critical Current

Links

Classifications

- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/12—Substrate holders or susceptors

DE8686109997T 1985-07-22 1986-07-21 Trommelstruktur fuer halbleiter epitaxiereaktor. Expired - Fee Related DE3682236D1 (de)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
US75753985A	1985-07-22	1985-07-22
US06/801,978 US4823736A (en)	1985-07-22	1985-11-26	Barrel structure for semiconductor epitaxial reactor

Publications (1)

Publication Number	Publication Date
DE3682236D1 true DE3682236D1 (de)	1991-12-05

Family

ID=27116401

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
DE8686109997T Expired - Fee Related DE3682236D1 (de)	1985-07-22	1986-07-21	Trommelstruktur fuer halbleiter epitaxiereaktor.

Country Status (3)

Country	Link
US (1)	US4823736A (de)
EP (1)	EP0210569B1 (de)
DE (1)	DE3682236D1 (de)

Families Citing this family (35)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US5104276A (en) *	1989-05-19	1992-04-14	Applied Materials, Inc.	Robotically loaded epitaxial deposition apparatus
US5116181A (en) *	1989-05-19	1992-05-26	Applied Materials, Inc.	Robotically loaded epitaxial deposition apparatus
US5119540A (en) *	1990-07-24	1992-06-09	Cree Research, Inc.	Apparatus for eliminating residual nitrogen contamination in epitaxial layers of silicon carbide and resulting product
US5121531A (en) *	1990-07-06	1992-06-16	Applied Materials, Inc.	Refractory susceptors for epitaxial deposition apparatus
JPH081922B2 (ja) *	1991-01-25	1996-01-10	株式会社東芝	ウェハ−保持装置
US5288364A (en) *	1992-08-20	1994-02-22	Motorola, Inc.	Silicon epitaxial reactor and control method
US5490881A (en) *	1992-11-02	1996-02-13	Gen Electric	Maintaining uniformity of deposited film thickness in plasma-enhanced chemical vapor deposition
DE4305750C2 (de) *	1993-02-25	2002-03-21	Unaxis Deutschland Holding	Vorrichtung zum Halten von flachen, kreisscheibenförmigen Substraten in der Vakuumkammer einer Beschichtungs- oder Ätzanlage
DE4305749A1 (de) *	1993-02-25	1994-09-01	Leybold Ag	Vorrichtung zum Halten von flachen, kreisscheibenförmigen Substraten in der Vakuumkammer einer Beschichtungs- oder Ätzanlage
US5453233A (en) *	1993-04-05	1995-09-26	Cvd, Inc.	Method of producing domes of ZNS and ZNSE via a chemical vapor deposition technique
US5484486A (en) *	1994-05-02	1996-01-16	Applied Materials, Inc.	Quick release process kit
US5988583A (en) *	1996-10-31	1999-11-23	Qualcomm Incorporated	Antenna mounting assembly
US5803971A (en) *	1997-01-13	1998-09-08	United Technologies Corporation	Modular coating fixture
US6110289A (en) *	1997-02-25	2000-08-29	Moore Epitaxial, Inc.	Rapid thermal processing barrel reactor for processing substrates
US5968277A (en) *	1997-10-10	1999-10-19	Seh America, Inc.	Susceptor apparatus for epitaxial deposition and method for reducing slip formation on semiconductor substrates
US6129048A (en) *	1998-06-30	2000-10-10	Memc Electronic Materials, Inc.	Susceptor for barrel reactor
IL125690A0 (en) *	1998-08-06	1999-04-11	Reiser Raphael Joshua	Furnace for processing semiconductor wafers
FI118474B (fi) *	1999-12-28	2007-11-30	Asm Int	Laite ohutkalvojen valmistamiseksi
US6811040B2 (en) *	2001-07-16	2004-11-02	Rohm And Haas Company	Wafer holding apparatus
ITMI20031841A1 (it) *	2003-09-25	2005-03-26	Lpe Spa	Suscettore per reattori epitassiali ad induzione.
US7462246B2 (en) *	2005-04-15	2008-12-09	Memc Electronic Materials, Inc.	Modified susceptor for barrel reactor
US20080314319A1 (en) *	2007-06-19	2008-12-25	Memc Electronic Materials, Inc.	Susceptor for improving throughput and reducing wafer damage
US8353259B2 (en) *	2007-08-24	2013-01-15	United Technologies Corporation	Masking fixture for a coating process
US8404049B2 (en) *	2007-12-27	2013-03-26	Memc Electronic Materials, Inc.	Epitaxial barrel susceptor having improved thickness uniformity
US20100098519A1 (en) *	2008-10-17	2010-04-22	Memc Electronic Materials, Inc.	Support for a semiconductor wafer in a high temperature environment
TW201122148A (en) *	2009-12-24	2011-07-01	Hon Hai Prec Ind Co Ltd	Chemical vapor deposition device
US9441295B2 (en) *	2010-05-14	2016-09-13	Solarcity Corporation	Multi-channel gas-delivery system
US8986451B2 (en) *	2010-05-25	2015-03-24	Singulus Mocvd Gmbh I. Gr.	Linear batch chemical vapor deposition system
US9169562B2 (en)	2010-05-25	2015-10-27	Singulus Mocvd Gmbh I. Gr.	Parallel batch chemical vapor deposition system
US9869021B2 (en)	2010-05-25	2018-01-16	Aventa Technologies, Inc.	Showerhead apparatus for a linear batch chemical vapor deposition system
KR20120083712A (ko) *	2011-01-18	2012-07-26	삼성엘이디 주식회사	서셉터 및 이를 구비하는 화학 기상 증착 장치
US20160359080A1 (en)	2015-06-07	2016-12-08	Solarcity Corporation	System, method and apparatus for chemical vapor deposition
US9748434B1 (en)	2016-05-24	2017-08-29	Tesla, Inc.	Systems, method and apparatus for curing conductive paste
US9954136B2 (en)	2016-08-03	2018-04-24	Tesla, Inc.	Cassette optimized for an inline annealing system
US10115856B2 (en)	2016-10-31	2018-10-30	Tesla, Inc.	System and method for curing conductive paste using induction heating

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US3749383A (en) *	1971-04-29	1973-07-31	Rca Corp	Apparatus for processing semiconductor devices
US3796182A (en) *	1971-12-16	1974-03-12	Applied Materials Tech	Susceptor structure for chemical vapor deposition reactor
US4099041A (en) *	1977-04-11	1978-07-04	Rca Corporation	Susceptor for heating semiconductor substrates
US4496828A (en) *	1983-07-08	1985-01-29	Ultra Carbon Corporation	Susceptor assembly
US4612207A (en) *	1985-01-14	1986-09-16	Xerox Corporation	Apparatus and process for the fabrication of large area thin film multilayers

1985
- 1985-11-26 US US06/801,978 patent/US4823736A/en not_active Expired - Fee Related
1986
- 1986-07-21 EP EP86109997A patent/EP0210569B1/de not_active Expired - Lifetime
- 1986-07-21 DE DE8686109997T patent/DE3682236D1/de not_active Expired - Fee Related

Also Published As

Publication number	Publication date
EP0210569A2 (de)	1987-02-04
US4823736A (en)	1989-04-25
EP0210569B1 (de)	1991-10-30
EP0210569A3 (en)	1987-06-16

Legal Events

Date	Code	Title	Description
1992-11-26	8364	No opposition during term of opposition
2003-05-15	8339	Ceased/non-payment of the annual fee

Publication	Publication Date	Title
DE3682236D1 (de)	1991-12-05	Trommelstruktur fuer halbleiter epitaxiereaktor.
DE3684557D1 (de)	1992-04-30	Waferintegrierte halbleiteranordnung.
DE3650613T2 (de)	1997-10-23	Halbleiteranordnung
DE3683316D1 (de)	1992-02-20	Halbleiteranordnung.
DE3650012T2 (de)	1994-11-24	Halbleitervorrichtung.
NL189326C (nl)	1993-03-01	Halfgeleiderinrichting.
DE3675565D1 (de)	1990-12-20	Substratstruktur fuer halbleiteranordnung.
DE3686107T2 (de)	1993-03-04	Bioumwandlungsreaktor.
KR860005215A (ko)	1986-07-18	반도체 광검출기
DE3679108D1 (de)	1991-06-13	Halbleiteranordnungen.
DE3688064D1 (de)	1993-04-22	Halbleitervorrichtung.
DE3575498D1 (de)	1990-02-22	Halbleiter-fotodetektorvorrichtung.
DE3667879D1 (de)	1990-02-01	Halbleiteranordnung.
DE3580568D1 (de)	1990-12-20	Sicherheitsvorrichtung fuer ladenkarren.
DE3684184D1 (de)	1992-04-16	Verkapselte halbleiteranordnung.
DE3681493D1 (de)	1991-10-24	Alkylierungsverfahren.
DE3686490D1 (de)	1992-10-01	Halbleiterstruktur.
MX157839A (es)	1988-12-15	Dispositivo fotovoltaico semi-conductor amorfo mejorado
DE3687993T2 (de)	1993-10-07	Carboxyhydrocarbyl-substituierte Silicium-Verbindungen.
DE3587451D1 (de)	1993-08-19	Halbleiteruebergitterstruktur.
DE3787137T2 (de)	1993-12-09	Halbleiteranordnung.
DE3579611D1 (de)	1990-10-18	Leitermaterialien fuer halbleiteranordnungen.
DE3686944D1 (de)	1992-11-12	Halbleiteranordnung.
DE3683037D1 (de)	1992-01-30	Halbleiteranordnung.
DE3683955D1 (de)	1992-04-02	Halbleitervorrichtung.