DE3687479D1 - Verwendung von in alkalische milieu loeslichen silsesquioxanpolymeren in einem resist zur herstellung von electronischen teilen. - Google Patents

Verwendung von in alkalische milieu loeslichen silsesquioxanpolymeren in einem resist zur herstellung von electronischen teilen.

Info

Publication number
DE3687479D1
DE3687479D1 DE8686106238T DE3687479T DE3687479D1 DE 3687479 D1 DE3687479 D1 DE 3687479D1 DE 8686106238 T DE8686106238 T DE 8686106238T DE 3687479 T DE3687479 T DE 3687479T DE 3687479 D1 DE3687479 D1 DE 3687479D1
Authority
DE
Germany
Prior art keywords
resist
production
electronic parts
polymers soluble
silsesquioxane polymers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8686106238T
Other languages
English (en)
Other versions
DE3687479T2 (de
Inventor
Hisashi Sugiyama
Kazuo Nate
Takashi Inoue
Akiko Mizushima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP9803285A external-priority patent/JPS61256347A/ja
Priority claimed from JP18295085A external-priority patent/JPS6243426A/ja
Priority claimed from JP23634485A external-priority patent/JPS6296526A/ja
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of DE3687479D1 publication Critical patent/DE3687479D1/de
Application granted granted Critical
Publication of DE3687479T2 publication Critical patent/DE3687479T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/60—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule in which all the silicon atoms are connected by linkages other than oxygen atoms
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/14—Polysiloxanes containing silicon bound to oxygen-containing groups
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
DE8686106238T 1985-05-10 1986-05-07 Verwendung von in alkalische milieu loeslichen silsesquioxanpolymeren in einem resist zur herstellung von electronischen teilen. Expired - Fee Related DE3687479T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP9803285A JPS61256347A (ja) 1985-05-10 1985-05-10 アルカリ可溶性シロキサン重合体
JP18295085A JPS6243426A (ja) 1985-08-22 1985-08-22 アルカリ可溶性シルメチレン重合体
JP23634485A JPS6296526A (ja) 1985-10-24 1985-10-24 アルカリ可溶性ポリオルガノシルセスキオキサン重合体

Publications (2)

Publication Number Publication Date
DE3687479D1 true DE3687479D1 (de) 1993-02-25
DE3687479T2 DE3687479T2 (de) 1993-06-03

Family

ID=27308561

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8686106238T Expired - Fee Related DE3687479T2 (de) 1985-05-10 1986-05-07 Verwendung von in alkalische milieu loeslichen silsesquioxanpolymeren in einem resist zur herstellung von electronischen teilen.

Country Status (2)

Country Link
US (1) US4745169A (de)
DE (1) DE3687479T2 (de)

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US5264319A (en) * 1985-05-10 1993-11-23 Hitachi, Ltd. Photosensitive resin composition having high resistance to oxygen plasma, containing alkali-soluble organosilicon polymer and photosensitive dissolution inhibitor
US4822716A (en) * 1985-12-27 1989-04-18 Kabushiki Kaisha Toshiba Polysilanes, Polysiloxanes and silicone resist materials containing these compounds
JP2507481B2 (ja) * 1987-05-21 1996-06-12 株式会社東芝 ポリシラン及び感光性組成物
US4996277A (en) * 1988-02-08 1991-02-26 Bradshaw Jerald S Novel oligoethylene oxide-containing alkenes, alkoxysilanes, and polysiloxanes
JP2630986B2 (ja) * 1988-05-18 1997-07-16 東レ・ダウコーニング・シリコーン株式会社 アルカリ可溶性オルガノポリシロキサン
US4909935A (en) * 1988-06-03 1990-03-20 Brigham Young University Chromatographic arylcarboxamide polysiloxanes
JP2648969B2 (ja) * 1989-07-28 1997-09-03 富士写真フイルム株式会社 感光性組成物
US5059512A (en) * 1989-10-10 1991-10-22 International Business Machines Corporation Ultraviolet light sensitive photoinitiator compositions, use thereof and radiation sensitive compositions
US5110711A (en) * 1989-10-10 1992-05-05 International Business Machines Corporation Method for forming a pattern
JPH082911B2 (ja) * 1990-06-06 1996-01-17 信越化学工業株式会社 １，３―ビス（ｐ―ヒドロキシベンジル）―１，１，３，３―テトラメチルジシロキサン及びその製造方法
EP0506425A3 (de) * 1991-03-26 1992-12-02 Kabushiki Kaisha Toshiba Monomolekularer Polysilanfilm und aus Polysilanschichten aufgebauter Film
EP0568476B1 (de) * 1992-04-30 1995-10-11 International Business Machines Corporation Silikon enthaltendes positives Photoresistmaterial und dessen Verwendung in Dünnfilm-Verpackung-Technologie
US5378789A (en) * 1992-05-14 1995-01-03 General Electric Company Phenol-modified silicones
US5385804A (en) * 1992-08-20 1995-01-31 International Business Machines Corporation Silicon containing negative resist for DUV, I-line or E-beam lithography comprising an aromatic azide side group in the polysilsesquioxane polymer
US5272013A (en) * 1992-08-21 1993-12-21 General Electric Company Articles made of high refractive index phenol-modified siloxanes
US5338818A (en) * 1992-09-10 1994-08-16 International Business Machines Corporation Silicon containing positive resist for DUV lithography
JP2547944B2 (ja) * 1992-09-30 1996-10-30 インターナショナル・ビジネス・マシーンズ・コーポレイション 二層レジスト組成物を使用する光学リソグラフによりサブ−ハーフミクロンパターンを形成する方法
US5412053A (en) * 1993-08-12 1995-05-02 The University Of Dayton Polymers containing alternating silsesquioxane and bridging group segments and process for their preparation
US5484867A (en) * 1993-08-12 1996-01-16 The University Of Dayton Process for preparation of polyhedral oligomeric silsesquioxanes and systhesis of polymers containing polyhedral oligomeric silsesqioxane group segments
US5683540A (en) * 1995-06-26 1997-11-04 Boeing North American, Inc. Method and system for enhancing the surface of a material for cleaning, material removal or as preparation for adhesive bonding or etching
US6087064A (en) * 1998-09-03 2000-07-11 International Business Machines Corporation Silsesquioxane polymers, method of synthesis, photoresist composition, and multilayer lithographic method
EP1190277B1 (de) * 1999-06-10 2009-10-07 AlliedSignal Inc. Spin-on-glass antireflektionsbeschichtungen aufweisender halbleiter für photolithographie
JP3604007B2 (ja) * 2000-03-29 2004-12-22 富士通株式会社 低誘電率被膜形成材料、及びそれを用いた被膜と半導体装置の製造方法
US6368400B1 (en) * 2000-07-17 2002-04-09 Honeywell International Absorbing compounds for spin-on-glass anti-reflective coatings for photolithography
TW594416B (en) * 2001-05-08 2004-06-21 Shipley Co Llc Photoimageable composition
US7423166B2 (en) * 2001-12-13 2008-09-09 Advanced Technology Materials, Inc. Stabilized cyclosiloxanes for use as CVD precursors for low-dielectric constant thin films
US7456488B2 (en) * 2002-11-21 2008-11-25 Advanced Technology Materials, Inc. Porogen material
US7108771B2 (en) 2001-12-13 2006-09-19 Advanced Technology Materials, Inc. Method for removal of impurities in cyclic siloxanes useful as precursors for low dielectric constant thin films
JP2004038142A (ja) 2002-03-03 2004-02-05 Shipley Co Llc ポリシロキサンを製造する方法及びそれを含むフォトレジスト組成物
JP4557497B2 (ja) * 2002-03-03 2010-10-06 ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． シランモノマー及びポリマーを製造する方法及びそれを含むフォトレジスト組成物
JP2004212946A (ja) * 2002-10-21 2004-07-29 Rohm & Haas Electronic Materials Llc Ｓｉポリマー含有フォトレジスト
JP2004177952A (ja) 2002-11-20 2004-06-24 Rohm & Haas Electronic Materials Llc 多層フォトレジスト系
EP1422565A3 (de) * 2002-11-20 2005-01-05 Shipley Company LLC Mehrlagige Fotoresist-Systeme
WO2004051376A1 (ja) * 2002-12-02 2004-06-17 Tokyo Ohka Kogyo Co., Ltd. 反射防止膜形成用組成物
US20040229159A1 (en) * 2003-02-23 2004-11-18 Subbareddy Kanagasabapathy Fluorinated Si-polymers and photoresists comprising same
JP5124077B2 (ja) * 2003-03-03 2013-01-23 ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． ポリマー、およびそれを含むフォトレジスト
KR101100463B1 (ko) * 2003-07-29 2011-12-29 도아고세이가부시키가이샤 규소 함유 고분자 화합물 및 그의 제조 방법 및 내열성 수지 조성물 및 내열성 피막
US8053159B2 (en) 2003-11-18 2011-11-08 Honeywell International Inc. Antireflective coatings for via fill and photolithography applications and methods of preparation thereof
US7659050B2 (en) * 2005-06-07 2010-02-09 International Business Machines Corporation High resolution silicon-containing resist
US8053375B1 (en) 2006-11-03 2011-11-08 Advanced Technology Materials, Inc. Super-dry reagent compositions for formation of ultra low k films
US8642246B2 (en) 2007-02-26 2014-02-04 Honeywell International Inc. Compositions, coatings and films for tri-layer patterning applications and methods of preparation thereof
DE102008057684A1 (de) 2008-11-17 2010-05-20 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Dialkoxy- oder Dihydroxyphenylreste enthaltende Silane, daraus hergestellte Klebstoffe sowie Verfahren zur Herstellung der Silane und der Klebstoffe
US8557877B2 (en) 2009-06-10 2013-10-15 Honeywell International Inc. Anti-reflective coatings for optically transparent substrates
KR20110112641A (ko) * 2010-04-07 2011-10-13 한국과학기술연구원 광활성 그룹을 측쇄로 가지는 사다리 구조의 폴리실세스퀴옥산 및 이의 제조방법
US8864898B2 (en) 2011-05-31 2014-10-21 Honeywell International Inc. Coating formulations for optical elements
EP3194502A4 (de) 2015-04-13 2018-05-16 Honeywell International Inc. Polysiloxanformulierungen und beschichtungen für optoelektronische anwendungen

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US3328450A (en) * 1963-01-09 1967-06-27 Dow Corning Silylalkyl phenols
US3837897A (en) * 1972-05-04 1974-09-24 Owens Corning Fiberglass Corp Glass fiber reinforced elastomers
EP0076656B1 (de) * 1981-10-03 1988-06-01 Japan Synthetic Rubber Co., Ltd. In Lösungsmitteln lösliche Organopolysilsesquioxane, Verfahren zu ihrer Herstellung, Zusammensetzungen und Halbleitervorrichtungen, die diese verwenden

Also Published As

Publication number Publication date
US4745169A (en) 1988-05-17
DE3687479T2 (de) 1993-06-03

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