DE3688388T2 - In einer Rille angeordneter monolithischer Halbleiterkondensator und solche Kondensatoren enthaltende hochintegrierte dynamische Speicherzellen. - Google Patents

In einer Rille angeordneter monolithischer Halbleiterkondensator und solche Kondensatoren enthaltende hochintegrierte dynamische Speicherzellen.

Info

Publication number
DE3688388T2
DE3688388T2 DE86110459T DE3688388T DE3688388T2 DE 3688388 T2 DE3688388 T2 DE 3688388T2 DE 86110459 T DE86110459 T DE 86110459T DE 3688388 T DE3688388 T DE 3688388T DE 3688388 T2 DE3688388 T2 DE 3688388T2
Authority
DE
Germany
Prior art keywords
capacitors
groove
memory cells
cells containing
dynamic memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE86110459T
Other languages
English (en)
Other versions
DE3688388D1 (de
Inventor
George Richard Goth
Shashi Dhar Malaviya
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of DE3688388D1 publication Critical patent/DE3688388D1/de
Application granted granted Critical
Publication of DE3688388T2 publication Critical patent/DE3688388T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/038—Making the capacitor or connections thereto the capacitor being in a trench in the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/10—DRAM devices comprising bipolar components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/37—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate
DE86110459T 1985-10-30 1986-07-29 In einer Rille angeordneter monolithischer Halbleiterkondensator und solche Kondensatoren enthaltende hochintegrierte dynamische Speicherzellen. Expired - Fee Related DE3688388T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/792,996 US4704368A (en) 1985-10-30 1985-10-30 Method of making trench-incorporated monolithic semiconductor capacitor and high density dynamic memory cells including the capacitor

Publications (2)

Publication Number Publication Date
DE3688388D1 DE3688388D1 (de) 1993-06-09
DE3688388T2 true DE3688388T2 (de) 1993-11-11

Family

ID=25158761

Family Applications (1)

Application Number Title Priority Date Filing Date
DE86110459T Expired - Fee Related DE3688388T2 (de) 1985-10-30 1986-07-29 In einer Rille angeordneter monolithischer Halbleiterkondensator und solche Kondensatoren enthaltende hochintegrierte dynamische Speicherzellen.

Country Status (5)

Country Link
US (1) US4704368A (de)
EP (1) EP0220392B1 (de)
JP (1) JPS62105467A (de)
CA (1) CA1258124A (de)
DE (1) DE3688388T2 (de)

Cited By (3)

* Cited by examiner, † Cited by third party
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DE10121131C1 (de) * 2001-04-30 2002-12-19 Infineon Technologies Ag Datenspeicher
DE102007009383A1 (de) * 2007-02-20 2008-08-21 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Halbleiteranordnung und Verfahren zu deren Herstellung
US8502307B2 (en) 2010-11-24 2013-08-06 Infineon Technologies Ag Vertical power semiconductor carrier having laterally isolated circuit areas

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US4824793A (en) * 1984-09-27 1989-04-25 Texas Instruments Incorporated Method of making DRAM cell with trench capacitor
US5225697A (en) * 1984-09-27 1993-07-06 Texas Instruments, Incorporated dRAM cell and method
US5102817A (en) * 1985-03-21 1992-04-07 Texas Instruments Incorporated Vertical DRAM cell and method
US5164917A (en) * 1985-06-26 1992-11-17 Texas Instruments Incorporated Vertical one-transistor DRAM with enhanced capacitance and process for fabricating
US4829017A (en) * 1986-09-25 1989-05-09 Texas Instruments Incorporated Method for lubricating a high capacity dram cell
JPS63122261A (ja) * 1986-11-12 1988-05-26 Mitsubishi Electric Corp 半導体装置の製造方法
US4830978A (en) * 1987-03-16 1989-05-16 Texas Instruments Incorporated Dram cell and method
JPH0620108B2 (ja) * 1987-03-23 1994-03-16 三菱電機株式会社 半導体装置の製造方法
JPS6439057A (en) * 1987-08-04 1989-02-09 Nec Corp Semiconductor storage device
US5109259A (en) * 1987-09-22 1992-04-28 Texas Instruments Incorporated Multiple DRAM cells in a trench
JP2517015B2 (ja) * 1987-11-06 1996-07-24 シャープ株式会社 半導体メモリの製造方法
JPH0795582B2 (ja) * 1987-11-17 1995-10-11 三菱電機株式会社 半導体装置の溝型キャパシタセルの製造方法
US4876217A (en) * 1988-03-24 1989-10-24 Motorola Inc. Method of forming semiconductor structure isolation regions
US5105245A (en) * 1988-06-28 1992-04-14 Texas Instruments Incorporated Trench capacitor DRAM cell with diffused bit lines adjacent to a trench
US5225363A (en) * 1988-06-28 1993-07-06 Texas Instruments Incorporated Trench capacitor DRAM cell and method of manufacture
JPH0817224B2 (ja) * 1988-08-03 1996-02-21 株式会社東芝 半導体記憶装置の製造方法
US5188971A (en) * 1988-12-28 1993-02-23 Synergy Semiconductor Corporation Process for making a self-aligned bipolar sinker structure
US5240867A (en) * 1989-02-09 1993-08-31 Fujitsu Limited Semiconductor integrated circuit having interconnection with improved design flexibility, and method of production
US5206182A (en) * 1989-06-08 1993-04-27 United Technologies Corporation Trench isolation process
US5017506A (en) * 1989-07-25 1991-05-21 Texas Instruments Incorporated Method for fabricating a trench DRAM
CA2016449C (en) * 1989-07-28 1996-06-25 Steven J. Hillenius Planar isolation technique for integrated circuits
US5065273A (en) * 1990-12-04 1991-11-12 International Business Machines Corporation High capacity DRAM trench capacitor and methods of fabricating same
US5399516A (en) * 1992-03-12 1995-03-21 International Business Machines Corporation Method of making shadow RAM cell having a shallow trench EEPROM
US5286667A (en) * 1992-08-11 1994-02-15 Taiwan Semiconductor Manufacturing Company Modified and robust self-aligning contact process
US5438009A (en) * 1993-04-02 1995-08-01 United Microelectronics Corporation Method of fabrication of MOSFET device with buried bit line
US5455064A (en) * 1993-11-12 1995-10-03 Fujitsu Limited Process for fabricating a substrate with thin film capacitor and insulating plug
US6090716A (en) * 1996-12-17 2000-07-18 Siliconix Incorporated Method of fabricating a field effect transistor
SE513471C2 (sv) * 1997-11-17 2000-09-18 Ericsson Telefon Ab L M Halvledarkomponent och tillverkningsförfarande för halvledarkomponent
JP4221859B2 (ja) * 1999-02-12 2009-02-12 株式会社デンソー 半導体装置の製造方法
DE19961779A1 (de) * 1999-12-21 2001-07-05 Infineon Technologies Ag Integrierte dynamische Speicherzelle mit geringer Ausbreitungsfläche und Verfahren zu deren Herstellung
US6995412B2 (en) * 2002-04-12 2006-02-07 International Business Machines Corporation Integrated circuit with capacitors having a fin structure
US6875653B2 (en) * 2002-08-02 2005-04-05 Promos Technologies Inc. DRAM cell structure with buried surrounding capacitor and process for manufacturing the same
US7208789B2 (en) * 2002-08-02 2007-04-24 Promos Technologies, Inc. DRAM cell structure with buried surrounding capacitor and process for manufacturing the same
US6818534B2 (en) * 2002-08-19 2004-11-16 Infineon Technologies Richmond, Lp DRAM having improved leakage performance and method for making same
US6905941B2 (en) * 2003-06-02 2005-06-14 International Business Machines Corporation Structure and method to fabricate ultra-thin Si channel devices
US20070045698A1 (en) * 2005-08-31 2007-03-01 International Business Machines Corporation Semiconductor structures with body contacts and fabrication methods thereof
US20070045697A1 (en) * 2005-08-31 2007-03-01 International Business Machines Corporation Body-contacted semiconductor structures and methods of fabricating such body-contacted semiconductor structures
US7982284B2 (en) * 2006-06-28 2011-07-19 Infineon Technologies Ag Semiconductor component including an isolation structure and a contact to the substrate
US7691734B2 (en) * 2007-03-01 2010-04-06 International Business Machines Corporation Deep trench based far subcollector reachthrough
JP2009277851A (ja) * 2008-05-14 2009-11-26 Nec Electronics Corp 半導体装置、半導体装置の製造方法及びパワーアンプ素子
KR101475852B1 (ko) 2010-11-02 2014-12-23 엠파이어 테크놀로지 디벨롭먼트 엘엘씨 절연된 관통 실리콘 비아를 가지는 반도체 구조
EP2919272B1 (de) * 2014-03-12 2020-05-27 Nxp B.V. Bipolare Transistorvorrichtung und Verfahren zur Herstellung
US10950689B2 (en) * 2015-09-23 2021-03-16 Nanyang Technological University Semiconductor device with a through-substrate via hole having therein a capacitor and a through-substrate via conductor
US20180047807A1 (en) * 2016-08-10 2018-02-15 Globalfoundries Inc. Deep trench capacitors with a diffusion pad
US10100537B1 (en) 2017-06-20 2018-10-16 Allen Engineering Corporation Ventilated high capacity hydraulic riding trowel
KR102501554B1 (ko) * 2020-10-08 2023-02-17 에트론 테크놀로지, 아이엔씨. 누설 전류가 감소되고 온/오프 전류를 조정할 수 있는 트랜지스터 구조체
US20220319909A1 (en) * 2021-04-01 2022-10-06 Nanya Technology Corporation Method for manufacturing a semiconductor memory device
WO2022240452A1 (en) * 2021-05-10 2022-11-17 Sandisk Technologies Llc Transistor circuits including fringeless transistors and method of making the same
US11837601B2 (en) 2021-05-10 2023-12-05 Sandisk Technologies Llc Transistor circuits including fringeless transistors and method of making the same

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JPH0666436B2 (ja) * 1983-04-15 1994-08-24 株式会社日立製作所 半導体集積回路装置
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JPS60117658A (ja) * 1983-11-30 1985-06-25 Hitachi Ltd Ｍｏｓダイナミツクメモリ装置の製造方法
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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10121131C1 (de) * 2001-04-30 2002-12-19 Infineon Technologies Ag Datenspeicher
DE102007009383A1 (de) * 2007-02-20 2008-08-21 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Halbleiteranordnung und Verfahren zu deren Herstellung
US8502307B2 (en) 2010-11-24 2013-08-06 Infineon Technologies Ag Vertical power semiconductor carrier having laterally isolated circuit areas
DE102011055185B4 (de) * 2010-11-24 2017-08-24 Infineon Technologies Ag Integrierte Schaltung mit Feldeffekttransistor

Also Published As

Publication number Publication date
JPH0582987B2 (de) 1993-11-24
EP0220392B1 (de) 1993-05-05
EP0220392A2 (de) 1987-05-06
DE3688388D1 (de) 1993-06-09
US4704368A (en) 1987-11-03
JPS62105467A (ja) 1987-05-15
EP0220392A3 (en) 1989-06-14
CA1258124A (en) 1989-08-01

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee