DE3688758D1 - Duennfilmtransistor auf isolierendem substrat. - Google Patents

Duennfilmtransistor auf isolierendem substrat.

Info

Publication number
DE3688758D1
DE3688758D1 DE8686104695T DE3688758T DE3688758D1 DE 3688758 D1 DE3688758 D1 DE 3688758D1 DE 8686104695 T DE8686104695 T DE 8686104695T DE 3688758 T DE3688758 T DE 3688758T DE 3688758 D1 DE3688758 D1 DE 3688758D1
Authority
DE
Germany
Prior art keywords
thin film
film transistor
insulating substrate
insulating
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8686104695T
Other languages
English (en)
Other versions
DE3688758T2 (de
Inventor
Akio Mimura
Yoshikazu Hosokawa
Takaya Suzuki
Takashi Aoyama
Nobutake Konishi
Yutaka Misawa
Kenji Miyata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP7263685A external-priority patent/JPS61231765A/ja
Priority claimed from JP11881185A external-priority patent/JPS61278163A/ja
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Application granted granted Critical
Publication of DE3688758D1 publication Critical patent/DE3688758D1/de
Publication of DE3688758T2 publication Critical patent/DE3688758T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H01L29/6675—Amorphous silicon or polysilicon transistors
    • H01L29/66757—Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45—Ohmic electrodes
    • H01L29/456—Ohmic electrodes on silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45—Ohmic electrodes
    • H01L29/456—Ohmic electrodes on silicon
    • H01L29/458—Ohmic electrodes on silicon for thin film silicon, e.g. source or drain electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78651—Silicon transistors
    • H01L29/7866—Non-monocrystalline silicon transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78651—Silicon transistors
    • H01L29/7866—Non-monocrystalline silicon transistors
    • H01L29/78672—Polycrystalline or microcrystalline silicon transistor
    • H01L29/78675—Polycrystalline or microcrystalline silicon transistor with normal-type structure, e.g. with top gate
DE86104695T 1985-04-08 1986-04-07 Dünnfilmtransistor auf isolierendem Substrat. Expired - Fee Related DE3688758T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP7263685A JPS61231765A (ja) 1985-04-08 1985-04-08 薄膜半導体装置の製造方法
JP11881185A JPS61278163A (ja) 1985-06-03 1985-06-03 薄膜トランジスタの製造方法

Publications (2)

Publication Number Publication Date
DE3688758D1 true DE3688758D1 (de) 1993-09-02
DE3688758T2 DE3688758T2 (de) 1994-02-10

Family

ID=26413771

Family Applications (1)

Application Number Title Priority Date Filing Date
DE86104695T Expired - Fee Related DE3688758T2 (de) 1985-04-08 1986-04-07 Dünnfilmtransistor auf isolierendem Substrat.

Country Status (3)

Country Link
US (1) US4954855A (de)
EP (1) EP0197531B1 (de)
DE (1) DE3688758T2 (de)

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GB8710359D0 (en) * 1987-05-01 1987-06-03 Inmos Ltd Semiconductor element
US5212400A (en) * 1988-02-18 1993-05-18 International Business Machines Corporation Method of depositing tungsten on silicon in a non-self-limiting CVD process and semiconductor device manufactured thereby
JPH0691108B2 (ja) * 1988-03-22 1994-11-14 インタ‐ナシヨナル・ビジネス・マシ‐ンズ・コ‐ポレ‐シヨン 薄膜電界効果トランジスタの製造方法
US4998152A (en) * 1988-03-22 1991-03-05 International Business Machines Corporation Thin film transistor
US5164805A (en) * 1988-08-22 1992-11-17 Massachusetts Institute Of Technology Near-intrinsic thin-film SOI FETS
US5066613A (en) * 1989-07-13 1991-11-19 The United States Of America As Represented By The Secretary Of The Navy Process for making semiconductor-on-insulator device interconnects
US5231297A (en) * 1989-07-14 1993-07-27 Sanyo Electric Co., Ltd. Thin film transistor
JP2941908B2 (ja) * 1989-07-31 1999-08-30 キヤノン株式会社 薄膜トランジスタ及びその製造方法並びにそれを有する装置
US5107321A (en) * 1990-04-02 1992-04-21 National Semiconductor Corporation Interconnect method for semiconductor devices
US5231042A (en) * 1990-04-02 1993-07-27 National Semiconductor Corporation Formation of silicide contacts using a sidewall oxide process
GB9008214D0 (en) * 1990-04-11 1990-06-13 Gen Electric Co Plc Semiconductor devices
JP2566175B2 (ja) * 1990-04-27 1996-12-25 セイコー電子工業株式会社 半導体装置及びその製造方法
US6893906B2 (en) * 1990-11-26 2005-05-17 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and driving method for the same
TW209895B (de) * 1990-11-26 1993-07-21 Semiconductor Energy Res Co Ltd
US5420048A (en) * 1991-01-09 1995-05-30 Canon Kabushiki Kaisha Manufacturing method for SOI-type thin film transistor
JP2657588B2 (ja) * 1991-01-11 1997-09-24 株式会社半導体エネルギー研究所 絶縁ゲイト型半導体装置およびその作製方法
US6979840B1 (en) * 1991-09-25 2005-12-27 Semiconductor Energy Laboratory Co., Ltd. Thin film transistors having anodized metal film between the gate wiring and drain wiring
JPH0590587A (ja) * 1991-09-30 1993-04-09 Sony Corp 絶縁ゲート型電界効果トランジスタ
US5306951A (en) * 1992-05-14 1994-04-26 Micron Technology, Inc. Sidewall silicidation for improved reliability and conductivity
US5418398A (en) * 1992-05-29 1995-05-23 Sgs-Thomson Microelectronics, Inc. Conductive structures in integrated circuits
JP3562588B2 (ja) 1993-02-15 2004-09-08 株式会社半導体エネルギー研究所 半導体装置の製造方法
US6997985B1 (en) 1993-02-15 2006-02-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor, semiconductor device, and method for fabricating the same
US7465679B1 (en) * 1993-02-19 2008-12-16 Semiconductor Energy Laboratory Co., Ltd. Insulating film and method of producing semiconductor device
JPH07175084A (ja) * 1993-12-21 1995-07-14 Hitachi Ltd 液晶表示装置及びその製造方法
US5344790A (en) * 1993-08-31 1994-09-06 Sgs-Thomson Microelectronics, Inc. Making integrated circuit transistor having drain junction offset
US5489792A (en) 1994-04-07 1996-02-06 Regents Of The University Of California Silicon-on-insulator transistors having improved current characteristics and reduced electrostatic discharge susceptibility
US5641708A (en) * 1994-06-07 1997-06-24 Sgs-Thomson Microelectronics, Inc. Method for fabricating conductive structures in integrated circuits
JP3253808B2 (ja) * 1994-07-07 2002-02-04 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
KR100304551B1 (ko) * 1994-09-23 2001-12-01 구자홍 박막트랜지스터제조방법
US6219114B1 (en) * 1995-12-01 2001-04-17 Lg Electronics Inc. Liquid crystal display device with reduced source/drain parasitic capacitance and method of fabricating same
US6746905B1 (en) 1996-06-20 2004-06-08 Kabushiki Kaisha Toshiba Thin film transistor and manufacturing process therefor
KR100252926B1 (ko) * 1996-06-28 2000-04-15 구본준 실리사이드를 이용한 폴리실리콘 박막트랜지스터 및 제조방법
GB2339966B (en) * 1996-06-28 2000-12-20 Lg Electronics Inc Polysilicon thin film transistor
JPH10135475A (ja) * 1996-10-31 1998-05-22 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
EP0981164A3 (de) * 1998-08-18 2003-10-15 International Business Machines Corporation Füllung mit niedrigem Widerstand für Kondensator in tiefem Graben
JP3417866B2 (ja) * 1999-03-11 2003-06-16 株式会社東芝 半導体装置およびその製造方法
JP2002231950A (ja) * 2001-01-30 2002-08-16 Takuo Sugano 完全反転型ｓｏｉｍｏｓｆｅｔ
US6982194B2 (en) * 2001-03-27 2006-01-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US7189997B2 (en) 2001-03-27 2007-03-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US6635946B2 (en) * 2001-08-16 2003-10-21 Macronix International Co., Ltd. Semiconductor device with trench isolation structure
JP4382375B2 (ja) 2003-03-13 2009-12-09 Ｎｅｃ液晶テクノロジー株式会社 薄膜トランジスタの製造方法
WO2006061764A1 (en) * 2004-12-06 2006-06-15 Koninklijke Philips Electronics N.V. Method of manufacturing a semiconductor device and semiconductor device obtained by using such a method
KR101913207B1 (ko) * 2011-10-12 2018-11-01 삼성디스플레이 주식회사 박막 트랜지스터, 및 박막 트랜지스터 표시판과 이들을 제조하는 방법
US9754935B2 (en) 2014-08-07 2017-09-05 International Business Machines Corporation Raised metal semiconductor alloy for self-aligned middle-of-line contact

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Publication number Priority date Publication date Assignee Title
US4319395A (en) * 1979-06-28 1982-03-16 Motorola, Inc. Method of making self-aligned device
JPS567480A (en) * 1979-06-29 1981-01-26 Mitsubishi Electric Corp Film transistor
US4336550A (en) * 1980-03-20 1982-06-22 Rca Corporation CMOS Device with silicided sources and drains and method
US4554572A (en) * 1983-06-17 1985-11-19 Texas Instruments Incorporated Self-aligned stacked CMOS
GB8406330D0 (en) * 1984-03-10 1984-04-11 Lucas Ind Plc Amorphous silicon field effect transistors

Also Published As

Publication number Publication date
DE3688758T2 (de) 1994-02-10
US4954855A (en) 1990-09-04
EP0197531B1 (de) 1993-07-28
EP0197531A2 (de) 1986-10-15
EP0197531A3 (en) 1989-06-14

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee