DE3751732D1 - Seitenwandisolation für eine Grube mittels Oxidation von Polysilizium - Google Patents

Seitenwandisolation für eine Grube mittels Oxidation von Polysilizium

Info

Publication number
DE3751732D1
DE3751732D1 DE3751732T DE3751732T DE3751732D1 DE 3751732 D1 DE3751732 D1 DE 3751732D1 DE 3751732 T DE3751732 T DE 3751732T DE 3751732 T DE3751732 T DE 3751732T DE 3751732 D1 DE3751732 D1 DE 3751732D1
Authority
DE
Germany
Prior art keywords
pit
sidewall insulation
polysilicon oxidation
polysilicon
oxidation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE3751732T
Other languages
English (en)
Other versions
DE3751732T2 (de
Inventor
Inge Grumm Fulton
James Steve Makris
Victor Ray Nastasi
Anthony Francis Scaduto
Anne Charlene Shartel
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of DE3751732D1 publication Critical patent/DE3751732D1/de
Publication of DE3751732T2 publication Critical patent/DE3751732T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/763—Polycrystalline semiconductor regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
    • H01L21/743—Making of internal connections, substrate contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
    • H01L21/76237—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials introducing impurities in trench side or bottom walls, e.g. for forming channel stoppers or alter isolation behavior
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/05—Etch and refill

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Element Separation (AREA)
  • Formation Of Insulating Films (AREA)
DE3751732T 1986-05-12 1987-03-24 Seitenwandisolation für eine Grube mittels Oxidation von Polysilizium Expired - Fee Related DE3751732T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/861,886 US4666556A (en) 1986-05-12 1986-05-12 Trench sidewall isolation by polysilicon oxidation

Publications (2)

Publication Number Publication Date
DE3751732D1 true DE3751732D1 (de) 1996-04-18
DE3751732T2 DE3751732T2 (de) 1996-09-26

Family

ID=25337030

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3751732T Expired - Fee Related DE3751732T2 (de) 1986-05-12 1987-03-24 Seitenwandisolation für eine Grube mittels Oxidation von Polysilizium

Country Status (7)

Country Link
US (1) US4666556A (de)
EP (1) EP0245622B1 (de)
JP (1) JPS62269335A (de)
BR (1) BR8702320A (de)
CA (1) CA1286572C (de)
DE (1) DE3751732T2 (de)
ES (1) ES2084575T3 (de)

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* Cited by examiner, † Cited by third party
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JPS62269335A (ja) 1987-11-21
US4666556A (en) 1987-05-19
EP0245622B1 (de) 1996-03-13
DE3751732T2 (de) 1996-09-26
ES2084575T3 (es) 1996-05-16
EP0245622A2 (de) 1987-11-19
BR8702320A (pt) 1988-02-17
CA1286572C (en) 1991-07-23
EP0245622A3 (en) 1990-03-28

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