DE3780784T2 - Eeprom-speicherzelle mit einer einzigen polysiliziumschicht, bitweise schreibbar und loeschbar. - Google Patents

Eeprom-speicherzelle mit einer einzigen polysiliziumschicht, bitweise schreibbar und loeschbar.

Info

Publication number
DE3780784T2
DE3780784T2 DE8787202392T DE3780784T DE3780784T2 DE 3780784 T2 DE3780784 T2 DE 3780784T2 DE 8787202392 T DE8787202392 T DE 8787202392T DE 3780784 T DE3780784 T DE 3780784T DE 3780784 T2 DE3780784 T2 DE 3780784T2
Authority
DE
Germany
Prior art keywords
polysilizer
bitwritely
writable
erasable
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8787202392T
Other languages
English (en)
Other versions
DE3780784D1 (de
Inventor
Paolo Giuseppe Cappelletti
Giuseppe Corda
Carlo Riva
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SRL
Original Assignee
SGS Thomson Microelectronics SRL
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SGS Thomson Microelectronics SRL filed Critical SGS Thomson Microelectronics SRL
Application granted granted Critical
Publication of DE3780784D1 publication Critical patent/DE3780784D1/de
Publication of DE3780784T2 publication Critical patent/DE3780784T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7881—Programmable transistors with only two possible levels of programmation
    • H01L29/7883—Programmable transistors with only two possible levels of programmation charging by tunnelling of carriers, e.g. Fowler-Nordheim tunnelling
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
DE8787202392T 1986-12-22 1987-12-02 Eeprom-speicherzelle mit einer einzigen polysiliziumschicht, bitweise schreibbar und loeschbar. Expired - Fee Related DE3780784T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT22800/86A IT1199828B (it) 1986-12-22 1986-12-22 Cella di memoria eeprom a singolo livello di polisilicio scrivibile e cancellabile bit a bit

Publications (2)

Publication Number Publication Date
DE3780784D1 DE3780784D1 (de) 1992-09-03
DE3780784T2 true DE3780784T2 (de) 1993-03-18

Family

ID=11200571

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8787202392T Expired - Fee Related DE3780784T2 (de) 1986-12-22 1987-12-02 Eeprom-speicherzelle mit einer einzigen polysiliziumschicht, bitweise schreibbar und loeschbar.

Country Status (5)

Country Link
US (1) US4935790A (de)
EP (1) EP0272732B1 (de)
JP (1) JPS63166274A (de)
DE (1) DE3780784T2 (de)
IT (1) IT1199828B (de)

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03206661A (ja) * 1990-01-09 1991-09-10 Fujitsu Ltd 半導体装置
JP2933090B2 (ja) * 1990-04-25 1999-08-09 富士通株式会社 不揮発性半導体記憶装置
JP3083547B2 (ja) * 1990-07-12 2000-09-04 株式会社日立製作所 半導体集積回路装置
US5355007A (en) * 1990-11-23 1994-10-11 Texas Instruments Incorporated Devices for non-volatile memory, systems and methods
US5282161A (en) * 1990-12-31 1994-01-25 Sgs-Thomson Microelectronics S.R.L. Eeprom cell having a read interface isolated from the write/erase interface
EP0493640B1 (de) * 1990-12-31 1995-04-19 STMicroelectronics S.r.l. EEPROM-Zelle mit einschichtigem Metallgate und mit einem Lese-Interface des externen Schaltkreises, welches isoliert ist vom Schreib/Lösch-Interface des Programmierungsschaltkreises
US5217915A (en) * 1991-04-08 1993-06-08 Texas Instruments Incorporated Method of making gate array base cell
US5412599A (en) * 1991-09-26 1995-05-02 Sgs-Thomson Microelectronics, S.R.L. Null consumption, nonvolatile, programmable switch
JP3293893B2 (ja) * 1991-12-09 2002-06-17 株式会社東芝 半導体不揮発性記憶装置の製造方法
US5440159A (en) * 1993-09-20 1995-08-08 Atmel Corporation Single layer polysilicon EEPROM having uniform thickness gate oxide/capacitor dielectric layer
JP2663863B2 (ja) * 1994-04-19 1997-10-15 日本電気株式会社 不揮発性半導体記憶装置
US5753954A (en) * 1996-07-19 1998-05-19 National Semiconductor Corporation Single-poly neuron MOS transistor
US5719427A (en) * 1997-01-14 1998-02-17 Pericom Semiconductor Corp. Avalanche-enhanced CMOS transistor for EPROM/EEPROM and ESD-protection structures
US5885871A (en) * 1997-07-31 1999-03-23 Stmicrolelectronics, Inc. Method of making EEPROM cell structure
US6044018A (en) * 1998-06-17 2000-03-28 Mosel Vitelic, Inc. Single-poly flash memory cell for embedded application and related methods
JP3503538B2 (ja) * 1999-08-20 2004-03-08 セイコーエプソン株式会社 半導体記憶装置
EP1096575A1 (de) 1999-10-07 2001-05-02 STMicroelectronics S.r.l. Nichtflüchtige Speicherzelle mit einer Polysiliziumsschicht und Verfahren zur Herstellung
EP1091408A1 (de) * 1999-10-07 2001-04-11 STMicroelectronics S.r.l. Festwertspeicherzelle mit einer Polysiliziumebene
US6747308B2 (en) * 2001-12-28 2004-06-08 Texas Instruments Incorporated Single poly EEPROM with reduced area
KR100505107B1 (ko) * 2003-01-08 2005-07-29 삼성전자주식회사 이이피롬 장치
JP2005353984A (ja) 2004-06-14 2005-12-22 Seiko Epson Corp 不揮発性記憶装置
JP4548603B2 (ja) 2005-06-08 2010-09-22 セイコーエプソン株式会社 半導体装置
JP4591691B2 (ja) * 2005-06-07 2010-12-01 セイコーエプソン株式会社 半導体装置
JP2006344735A (ja) * 2005-06-08 2006-12-21 Seiko Epson Corp 半導体装置
JP4613761B2 (ja) 2005-09-09 2011-01-19 セイコーエプソン株式会社 集積回路装置及び電子機器
JP4404032B2 (ja) * 2005-09-09 2010-01-27 セイコーエプソン株式会社 集積回路装置及び電子機器
JP4665677B2 (ja) 2005-09-09 2011-04-06 セイコーエプソン株式会社 集積回路装置及び電子機器
KR100667909B1 (ko) * 2005-12-29 2007-01-11 매그나칩 반도체 유한회사 비휘발성 반도체 메모리 장치
US8040212B2 (en) * 2009-07-22 2011-10-18 Volterra Semiconductor Corporation Low profile inductors for high density circuit boards
JP5668905B2 (ja) * 2009-09-07 2015-02-12 セイコーＮｐｃ株式会社 不揮発性半導体メモリ
US11282844B2 (en) * 2018-06-27 2022-03-22 Ememory Technology Inc. Erasable programmable non-volatile memory including two floating gate transistors with the same floating gate
US10846458B2 (en) * 2018-08-30 2020-11-24 Taiwan Semiconductor Manufacturing Company Ltd. Engineering change order cell structure having always-on transistor

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL7500550A (nl) * 1975-01-17 1976-07-20 Philips Nv Halfgeleider-geheugeninrichting.
US4037242A (en) * 1975-12-29 1977-07-19 Texas Instruments Incorporated Dual injector, floating gate MOS electrically alterable, non-volatile semiconductor memory device
DE3007892C2 (de) * 1980-03-01 1982-06-09 Deutsche Itt Industries Gmbh, 7800 Freiburg Floating-Gate-Speicherzelle
US4404577A (en) * 1980-06-30 1983-09-13 International Business Machines Corp. Electrically alterable read only memory cell
DE3029539A1 (de) * 1980-08-04 1982-03-11 Deutsche Itt Industries Gmbh, 7800 Freiburg Nichtfluechtige, programmierbare integrierte halbleiterspeicherzelle
JPS6034198B2 (ja) * 1980-11-26 1985-08-07 富士通株式会社 不揮発性メモリ
DE3174417D1 (en) * 1980-12-08 1986-05-22 Toshiba Kk Semiconductor memory device
US4531203A (en) * 1980-12-20 1985-07-23 Tokyo Shibaura Denki Kabushiki Kaisha Semiconductor memory device and method for manufacturing the same
US4558339A (en) * 1982-03-09 1985-12-10 Rca Corporation Electrically alterable, nonvolatile floating gate memory device
GB2126788B (en) * 1982-03-09 1985-06-19 Rca Corp An electrically alterable nonvolatile floating gate memory device
JPS5960797A (ja) * 1982-09-30 1984-04-06 Toshiba Corp 不揮発性半導体メモリ装置
JPS59155968A (ja) * 1983-02-25 1984-09-05 Toshiba Corp 半導体記憶装置
JPS6074577A (ja) * 1983-09-30 1985-04-26 Toshiba Corp 不揮発性半導体メモリ装置
JPS60260147A (ja) * 1984-06-06 1985-12-23 Fujitsu Ltd 半導体装置
US4616245A (en) * 1984-10-29 1986-10-07 Ncr Corporation Direct-write silicon nitride EEPROM cell
US4649520A (en) * 1984-11-07 1987-03-10 Waferscale Integration Inc. Single layer polycrystalline floating gate
JPH06101548B2 (ja) * 1985-03-30 1994-12-12 株式会社東芝 半導体記憶装置

Also Published As

Publication number Publication date
EP0272732B1 (de) 1992-07-29
IT8622800A0 (it) 1986-12-22
US4935790A (en) 1990-06-19
EP0272732A2 (de) 1988-06-29
JPS63166274A (ja) 1988-07-09
EP0272732A3 (en) 1989-03-15
DE3780784D1 (de) 1992-09-03
IT1199828B (it) 1989-01-05

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee