DE3780784T2 - Eeprom-speicherzelle mit einer einzigen polysiliziumschicht, bitweise schreibbar und loeschbar. - Google Patents
Eeprom-speicherzelle mit einer einzigen polysiliziumschicht, bitweise schreibbar und loeschbar.Info
- Publication number
- DE3780784T2 DE3780784T2 DE8787202392T DE3780784T DE3780784T2 DE 3780784 T2 DE3780784 T2 DE 3780784T2 DE 8787202392 T DE8787202392 T DE 8787202392T DE 3780784 T DE3780784 T DE 3780784T DE 3780784 T2 DE3780784 T2 DE 3780784T2
- Authority
- DE
- Germany
- Prior art keywords
- polysilizer
- bitwritely
- writable
- erasable
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
- H01L29/7881—Programmable transistors with only two possible levels of programmation
- H01L29/7883—Programmable transistors with only two possible levels of programmation charging by tunnelling of carriers, e.g. Fowler-Nordheim tunnelling
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
IT22800/86A IT1199828B (it) | 1986-12-22 | 1986-12-22 | Cella di memoria eeprom a singolo livello di polisilicio scrivibile e cancellabile bit a bit |
Publications (2)
Publication Number | Publication Date |
---|---|
DE3780784D1 DE3780784D1 (de) | 1992-09-03 |
DE3780784T2 true DE3780784T2 (de) | 1993-03-18 |
Family
ID=11200571
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8787202392T Expired - Fee Related DE3780784T2 (de) | 1986-12-22 | 1987-12-02 | Eeprom-speicherzelle mit einer einzigen polysiliziumschicht, bitweise schreibbar und loeschbar. |
Country Status (5)
Country | Link |
---|---|
US (1) | US4935790A (de) |
EP (1) | EP0272732B1 (de) |
JP (1) | JPS63166274A (de) |
DE (1) | DE3780784T2 (de) |
IT (1) | IT1199828B (de) |
Families Citing this family (32)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03206661A (ja) * | 1990-01-09 | 1991-09-10 | Fujitsu Ltd | 半導体装置 |
JP2933090B2 (ja) * | 1990-04-25 | 1999-08-09 | 富士通株式会社 | 不揮発性半導体記憶装置 |
JP3083547B2 (ja) * | 1990-07-12 | 2000-09-04 | 株式会社日立製作所 | 半導体集積回路装置 |
US5355007A (en) * | 1990-11-23 | 1994-10-11 | Texas Instruments Incorporated | Devices for non-volatile memory, systems and methods |
US5282161A (en) * | 1990-12-31 | 1994-01-25 | Sgs-Thomson Microelectronics S.R.L. | Eeprom cell having a read interface isolated from the write/erase interface |
EP0493640B1 (de) * | 1990-12-31 | 1995-04-19 | STMicroelectronics S.r.l. | EEPROM-Zelle mit einschichtigem Metallgate und mit einem Lese-Interface des externen Schaltkreises, welches isoliert ist vom Schreib/Lösch-Interface des Programmierungsschaltkreises |
US5217915A (en) * | 1991-04-08 | 1993-06-08 | Texas Instruments Incorporated | Method of making gate array base cell |
US5412599A (en) * | 1991-09-26 | 1995-05-02 | Sgs-Thomson Microelectronics, S.R.L. | Null consumption, nonvolatile, programmable switch |
JP3293893B2 (ja) * | 1991-12-09 | 2002-06-17 | 株式会社東芝 | 半導体不揮発性記憶装置の製造方法 |
US5440159A (en) * | 1993-09-20 | 1995-08-08 | Atmel Corporation | Single layer polysilicon EEPROM having uniform thickness gate oxide/capacitor dielectric layer |
JP2663863B2 (ja) * | 1994-04-19 | 1997-10-15 | 日本電気株式会社 | 不揮発性半導体記憶装置 |
US5753954A (en) * | 1996-07-19 | 1998-05-19 | National Semiconductor Corporation | Single-poly neuron MOS transistor |
US5719427A (en) * | 1997-01-14 | 1998-02-17 | Pericom Semiconductor Corp. | Avalanche-enhanced CMOS transistor for EPROM/EEPROM and ESD-protection structures |
US5885871A (en) * | 1997-07-31 | 1999-03-23 | Stmicrolelectronics, Inc. | Method of making EEPROM cell structure |
US6044018A (en) * | 1998-06-17 | 2000-03-28 | Mosel Vitelic, Inc. | Single-poly flash memory cell for embedded application and related methods |
JP3503538B2 (ja) * | 1999-08-20 | 2004-03-08 | セイコーエプソン株式会社 | 半導体記憶装置 |
EP1091408A1 (de) * | 1999-10-07 | 2001-04-11 | STMicroelectronics S.r.l. | Festwertspeicherzelle mit einer Polysiliziumebene |
EP1096575A1 (de) | 1999-10-07 | 2001-05-02 | STMicroelectronics S.r.l. | Nichtflüchtige Speicherzelle mit einer Polysiliziumsschicht und Verfahren zur Herstellung |
US6747308B2 (en) * | 2001-12-28 | 2004-06-08 | Texas Instruments Incorporated | Single poly EEPROM with reduced area |
KR100505107B1 (ko) * | 2003-01-08 | 2005-07-29 | 삼성전자주식회사 | 이이피롬 장치 |
JP2005353984A (ja) | 2004-06-14 | 2005-12-22 | Seiko Epson Corp | 不揮発性記憶装置 |
JP4591691B2 (ja) * | 2005-06-07 | 2010-12-01 | セイコーエプソン株式会社 | 半導体装置 |
JP4548603B2 (ja) | 2005-06-08 | 2010-09-22 | セイコーエプソン株式会社 | 半導体装置 |
JP2006344735A (ja) * | 2005-06-08 | 2006-12-21 | Seiko Epson Corp | 半導体装置 |
JP4665677B2 (ja) | 2005-09-09 | 2011-04-06 | セイコーエプソン株式会社 | 集積回路装置及び電子機器 |
JP4404032B2 (ja) * | 2005-09-09 | 2010-01-27 | セイコーエプソン株式会社 | 集積回路装置及び電子機器 |
JP4613761B2 (ja) | 2005-09-09 | 2011-01-19 | セイコーエプソン株式会社 | 集積回路装置及び電子機器 |
KR100667909B1 (ko) * | 2005-12-29 | 2007-01-11 | 매그나칩 반도체 유한회사 | 비휘발성 반도체 메모리 장치 |
US8040212B2 (en) * | 2009-07-22 | 2011-10-18 | Volterra Semiconductor Corporation | Low profile inductors for high density circuit boards |
JP5668905B2 (ja) * | 2009-09-07 | 2015-02-12 | セイコーNpc株式会社 | 不揮発性半導体メモリ |
US11282844B2 (en) * | 2018-06-27 | 2022-03-22 | Ememory Technology Inc. | Erasable programmable non-volatile memory including two floating gate transistors with the same floating gate |
US10846458B2 (en) * | 2018-08-30 | 2020-11-24 | Taiwan Semiconductor Manufacturing Company Ltd. | Engineering change order cell structure having always-on transistor |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL7500550A (nl) * | 1975-01-17 | 1976-07-20 | Philips Nv | Halfgeleider-geheugeninrichting. |
US4037242A (en) * | 1975-12-29 | 1977-07-19 | Texas Instruments Incorporated | Dual injector, floating gate MOS electrically alterable, non-volatile semiconductor memory device |
DE3007892C2 (de) * | 1980-03-01 | 1982-06-09 | Deutsche Itt Industries Gmbh, 7800 Freiburg | Floating-Gate-Speicherzelle |
US4404577A (en) * | 1980-06-30 | 1983-09-13 | International Business Machines Corp. | Electrically alterable read only memory cell |
DE3029539A1 (de) * | 1980-08-04 | 1982-03-11 | Deutsche Itt Industries Gmbh, 7800 Freiburg | Nichtfluechtige, programmierbare integrierte halbleiterspeicherzelle |
JPS6034198B2 (ja) * | 1980-11-26 | 1985-08-07 | 富士通株式会社 | 不揮発性メモリ |
DE3174417D1 (en) * | 1980-12-08 | 1986-05-22 | Toshiba Kk | Semiconductor memory device |
US4531203A (en) * | 1980-12-20 | 1985-07-23 | Tokyo Shibaura Denki Kabushiki Kaisha | Semiconductor memory device and method for manufacturing the same |
JPS59500343A (ja) * | 1982-03-09 | 1984-03-01 | ア−ルシ−エ− コ−ポレ−シヨン | 電気的に改変可能の不揮発性浮動ゲ−ト記憶装置 |
US4558339A (en) * | 1982-03-09 | 1985-12-10 | Rca Corporation | Electrically alterable, nonvolatile floating gate memory device |
JPS5960797A (ja) * | 1982-09-30 | 1984-04-06 | Toshiba Corp | 不揮発性半導体メモリ装置 |
JPS59155968A (ja) * | 1983-02-25 | 1984-09-05 | Toshiba Corp | 半導体記憶装置 |
JPS6074577A (ja) * | 1983-09-30 | 1985-04-26 | Toshiba Corp | 不揮発性半導体メモリ装置 |
JPS60260147A (ja) * | 1984-06-06 | 1985-12-23 | Fujitsu Ltd | 半導体装置 |
US4616245A (en) * | 1984-10-29 | 1986-10-07 | Ncr Corporation | Direct-write silicon nitride EEPROM cell |
US4649520A (en) * | 1984-11-07 | 1987-03-10 | Waferscale Integration Inc. | Single layer polycrystalline floating gate |
JPH06101548B2 (ja) * | 1985-03-30 | 1994-12-12 | 株式会社東芝 | 半導体記憶装置 |
-
1986
- 1986-12-22 IT IT22800/86A patent/IT1199828B/it active
-
1987
- 1987-12-02 EP EP87202392A patent/EP0272732B1/de not_active Expired
- 1987-12-02 DE DE8787202392T patent/DE3780784T2/de not_active Expired - Fee Related
- 1987-12-17 JP JP62317644A patent/JPS63166274A/ja active Pending
- 1987-12-22 US US07/136,652 patent/US4935790A/en not_active Ceased
Also Published As
Publication number | Publication date |
---|---|
IT1199828B (it) | 1989-01-05 |
US4935790A (en) | 1990-06-19 |
JPS63166274A (ja) | 1988-07-09 |
EP0272732B1 (de) | 1992-07-29 |
IT8622800A0 (it) | 1986-12-22 |
EP0272732A3 (en) | 1989-03-15 |
EP0272732A2 (de) | 1988-06-29 |
DE3780784D1 (de) | 1992-09-03 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |