DE3787139D1 - Verfahren zur Erzeugung von Einkristall-Dünnschichten aus Halbleitergrundstoff. - Google Patents

Verfahren zur Erzeugung von Einkristall-Dünnschichten aus Halbleitergrundstoff.

Info

Publication number
DE3787139D1
DE3787139D1 DE87112838T DE3787139T DE3787139D1 DE 3787139 D1 DE3787139 D1 DE 3787139D1 DE 87112838 T DE87112838 T DE 87112838T DE 3787139 T DE3787139 T DE 3787139T DE 3787139 D1 DE3787139 D1 DE 3787139D1
Authority
DE
Germany
Prior art keywords
production
raw materials
thin films
crystal thin
semiconductor raw
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE87112838T
Other languages
English (en)
Other versions
DE3787139T2 (de
Inventor
Junichi Nishizawa
Kenji Aoki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Japan Science and Technology Agency
Original Assignee
Research Development Corp of Japan
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Research Development Corp of Japan filed Critical Research Development Corp of Japan
Application granted granted Critical
Publication of DE3787139D1 publication Critical patent/DE3787139D1/de
Publication of DE3787139T2 publication Critical patent/DE3787139T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C30B29/68—Crystals with laminate structure, e.g. "superlattices"
DE87112838T 1986-09-08 1987-09-02 Verfahren zur Erzeugung von Einkristall-Dünnschichten aus Halbleitergrundstoff. Expired - Fee Related DE3787139T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61209575A JPH0639357B2 (ja) 1986-09-08 1986-09-08 元素半導体単結晶薄膜の成長方法

Publications (2)

Publication Number Publication Date
DE3787139D1 true DE3787139D1 (de) 1993-09-30
DE3787139T2 DE3787139T2 (de) 1994-01-20

Family

ID=16575104

Family Applications (2)

Application Number Title Priority Date Filing Date
DE198787112838T Pending DE259777T1 (de) 1986-09-08 1987-09-02 Verfahren zur erzeugung von einkristall-duennschichten aus halbleitergrundstoff.
DE87112838T Expired - Fee Related DE3787139T2 (de) 1986-09-08 1987-09-02 Verfahren zur Erzeugung von Einkristall-Dünnschichten aus Halbleitergrundstoff.

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE198787112838T Pending DE259777T1 (de) 1986-09-08 1987-09-02 Verfahren zur erzeugung von einkristall-duennschichten aus halbleitergrundstoff.

Country Status (4)

Country Link
US (1) US4834831A (de)
EP (1) EP0259777B1 (de)
JP (1) JPH0639357B2 (de)
DE (2) DE259777T1 (de)

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DE3873593T2 (de) * 1987-04-21 1992-12-10 Seiko Instr Inc Apparatur zur herstellung von halbleiterkristallen.
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Also Published As

Publication number Publication date
US4834831A (en) 1989-05-30
DE3787139T2 (de) 1994-01-20
EP0259777B1 (de) 1993-08-25
JPS6364993A (ja) 1988-03-23
JPH0639357B2 (ja) 1994-05-25
DE259777T1 (de) 1988-09-22
EP0259777A2 (de) 1988-03-16
EP0259777A3 (en) 1990-01-31

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