DE3789618T2 - Ionenerzeugende apparatur, dünnschichtbildende vorrichtung unter verwendung der ionenerzeugenden apparatur und ionenquelle. - Google Patents

Ionenerzeugende apparatur, dünnschichtbildende vorrichtung unter verwendung der ionenerzeugenden apparatur und ionenquelle.

Info

Publication number
DE3789618T2
DE3789618T2 DE3789618T DE3789618T DE3789618T2 DE 3789618 T2 DE3789618 T2 DE 3789618T2 DE 3789618 T DE3789618 T DE 3789618T DE 3789618 T DE3789618 T DE 3789618T DE 3789618 T2 DE3789618 T2 DE 3789618T2
Authority
DE
Germany
Prior art keywords
generating apparatus
ion generating
ion
thin film
film forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE3789618T
Other languages
English (en)
Other versions
DE3789618D1 (de
Inventor
Morito Matsuoka
Ken Ichi Ono
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP23082986A external-priority patent/JPH089778B2/ja
Priority claimed from JP61230830A external-priority patent/JPH089780B2/ja
Priority claimed from JP20800487A external-priority patent/JPS6452063A/ja
Priority claimed from JP20800387A external-priority patent/JPS6452062A/ja
Priority claimed from JP21489987A external-priority patent/JPS6456869A/ja
Priority claimed from JP21490087A external-priority patent/JPS6456870A/ja
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Publication of DE3789618D1 publication Critical patent/DE3789618D1/de
Application granted granted Critical
Publication of DE3789618T2 publication Critical patent/DE3789618T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J27/00—Ion beam tubes
    • H01J27/02—Ion sources; Ion guns
    • H01J27/16—Ion sources; Ion guns using high-frequency excitation, e.g. microwave excitation
    • H01J27/18—Ion sources; Ion guns using high-frequency excitation, e.g. microwave excitation with an applied axial magnetic field
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357—Generation remote from the workpiece, e.g. down-stream
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • H01J37/32678—Electron cyclotron resonance
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/08—Ion sources
    • H01J2237/081—Sputtering sources
DE3789618T 1986-09-29 1987-09-24 Ionenerzeugende apparatur, dünnschichtbildende vorrichtung unter verwendung der ionenerzeugenden apparatur und ionenquelle. Expired - Lifetime DE3789618T2 (de)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
JP23082986A JPH089778B2 (ja) 1986-09-29 1986-09-29 イオン源
JP61230830A JPH089780B2 (ja) 1986-09-29 1986-09-29 薄膜形成装置
JP20800487A JPS6452063A (en) 1987-08-21 1987-08-21 Ionic source
JP20800387A JPS6452062A (en) 1987-08-21 1987-08-21 Ionic source
JP21489987A JPS6456869A (en) 1987-08-28 1987-08-28 Thin film forming device
JP21490087A JPS6456870A (en) 1987-08-28 1987-08-28 Thin film forming device
PCT/JP1987/000695 WO1988002546A1 (en) 1986-09-29 1987-09-24 Ion generation apparatus, thin film formation apparatus using the ion generation apparatus, and ion source

Publications (2)

Publication Number Publication Date
DE3789618D1 DE3789618D1 (de) 1994-05-19
DE3789618T2 true DE3789618T2 (de) 1994-11-10

Family

ID=27553842

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3789618T Expired - Lifetime DE3789618T2 (de) 1986-09-29 1987-09-24 Ionenerzeugende apparatur, dünnschichtbildende vorrichtung unter verwendung der ionenerzeugenden apparatur und ionenquelle.

Country Status (4)

Country Link
US (1) US5022977A (de)
EP (1) EP0283519B1 (de)
DE (1) DE3789618T2 (de)
WO (1) WO1988002546A1 (de)

Families Citing this family (38)

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US5146138A (en) * 1988-04-05 1992-09-08 Mitsubishi Denki Kabushiki Kaisha Plasma processor
KR910016054A (ko) * 1990-02-23 1991-09-30 미다 가쓰시게 마이크로 전자 장치용 표면 처리 장치 및 그 방법
JPH0436465A (ja) * 1990-06-01 1992-02-06 Matsushita Electric Ind Co Ltd マイクロ波プラズマ発生装置
US5173641A (en) * 1990-09-14 1992-12-22 Tokyo Electron Limited Plasma generating apparatus
US5707692A (en) * 1990-10-23 1998-01-13 Canon Kabushiki Kaisha Apparatus and method for processing a base substance using plasma and a magnetic field
US5178739A (en) * 1990-10-31 1993-01-12 International Business Machines Corporation Apparatus for depositing material into high aspect ratio holes
US5779802A (en) * 1990-12-10 1998-07-14 Imec V.Z.W. Thin film deposition chamber with ECR-plasma source
JP2700280B2 (ja) * 1991-03-28 1998-01-19 理化学研究所 イオンビーム発生装置および成膜装置および成膜方法
US5189446A (en) * 1991-05-17 1993-02-23 International Business Machines Corporation Plasma wafer processing tool having closed electron cyclotron resonance
DE4119362A1 (de) * 1991-06-12 1992-12-17 Leybold Ag Teilchenquelle, insbesondere fuer reaktive ionenaetz- und plasmaunterstuetzte cvd-verfahren
US5480533A (en) * 1991-08-09 1996-01-02 Matsushita Electric Industrial Co., Ltd. Microwave plasma source
US5482611A (en) * 1991-09-30 1996-01-09 Helmer; John C. Physical vapor deposition employing ion extraction from a plasma
DE4200235C1 (de) * 1992-01-08 1993-05-06 Hoffmeister, Helmut, Dr., 4400 Muenster, De
FR2701797B1 (fr) * 1993-02-18 1995-03-31 Commissariat Energie Atomique Coupleur de transfert d'une puissance micro-onde vers une nappe de plasma et source micro-onde linéaire pour le traitement de surfaces par plasma .
KR0170456B1 (ko) * 1993-07-16 1999-03-30 세끼사와 다까시 반도체 장치 및 그 제조방법
DE4419970A1 (de) * 1994-06-08 1995-12-21 Juergen Prof Dr Andrae Vorrichtung zur Erzeugung von Strahlen hochgeladener Ionen
JP3944946B2 (ja) * 1997-04-25 2007-07-18 株式会社島津製作所 薄膜形成装置
US6024617A (en) 1997-08-06 2000-02-15 Smullin Corporation Marine engine silencing apparatus and method
US6163006A (en) * 1998-02-06 2000-12-19 Astex-Plasmaquest, Inc. Permanent magnet ECR plasma source with magnetic field optimization
US6179973B1 (en) * 1999-01-05 2001-01-30 Novellus Systems, Inc. Apparatus and method for controlling plasma uniformity across a substrate
US6497796B1 (en) 1999-01-05 2002-12-24 Novellus Systems, Inc. Apparatus and method for controlling plasma uniformity across a substrate
US6541781B1 (en) * 2000-07-25 2003-04-01 Axcelis Technologies, Inc. Waveguide for microwave excitation of plasma in an ion beam guide
GB0209291D0 (en) * 2002-04-24 2002-06-05 Trikon Technologies Ltd Plasma processing apparatus
US6876154B2 (en) 2002-04-24 2005-04-05 Trikon Holdings Limited Plasma processing apparatus
JP2005079406A (ja) * 2003-09-01 2005-03-24 Matsushita Electric Ind Co Ltd 半導体レーザの製造方法
CN1890175B (zh) * 2003-12-03 2010-04-07 理想星株式会社 衍生富勒烯的制造装置及制造方法
JP4770506B2 (ja) * 2006-02-17 2011-09-14 ミツミ電機株式会社 導波路型光アイソレータ及び導波路型光アイソレータに用いられる磁石ホルダ
JP2008233035A (ja) * 2007-03-23 2008-10-02 Toshiba Corp 基板検査方法
KR100881954B1 (ko) * 2007-11-09 2009-02-06 한국전자통신연구원 반응성 스퍼터링 증착 장치
KR100885664B1 (ko) * 2008-04-03 2009-02-25 주식회사 케이아이자이맥스 고속/고밀도 마그네트론 스퍼터링 법을 이용한 후막제조방법
JP2012512327A (ja) * 2008-12-18 2012-05-31 メルク パテント ゲゼルシャフト ミット ベシュレンクテル ハフツング 低いエネルギーを有している粒子によって絶縁層を形成する方法
US9589772B2 (en) 2011-06-09 2017-03-07 Korea Basic Science Institute Plasma generation source including belt-type magnet and thin film deposition system using this
KR20140019577A (ko) * 2012-08-06 2014-02-17 삼성디스플레이 주식회사 박막 증착 장치 및 이를 이용한 박막 증착 방법
EP2960684A1 (de) * 2014-06-26 2015-12-30 Ampass-explorer Corp. Antennenanordnung
FR3042797B1 (fr) * 2015-10-27 2021-01-22 Commissariat Energie Atomique Dispositif pour la fabrication d'une couche en carbone amorphe par plasma a la resonance cyclotron electronique
US10128083B2 (en) * 2016-06-01 2018-11-13 Vebco Instruments Inc. Ion sources and methods for generating ion beams with controllable ion current density distributions over large treatment areas
JP7245661B2 (ja) * 2019-01-30 2023-03-24 Ｊｓｗアフティ株式会社 ターゲットおよび成膜装置並びに成膜対象物の製造方法
CN110987887B (zh) * 2019-12-10 2021-08-13 中国科学技术大学 一种微型高温odmr测量样品腔

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1399603A (en) * 1971-09-07 1975-07-02 Boswell R W Christiansen P J N Ion sources
DE3566194D1 (en) * 1984-08-31 1988-12-15 Hitachi Ltd Microwave assisting sputtering
JPH0654644B2 (ja) * 1985-10-04 1994-07-20 株式会社日立製作所 イオン源
FR2595868B1 (fr) * 1986-03-13 1988-05-13 Commissariat Energie Atomique Source d'ions a resonance cyclotronique electronique a injection coaxiale d'ondes electromagnetiques
US4911814A (en) * 1988-02-08 1990-03-27 Nippon Telegraph And Telephone Corporation Thin film forming apparatus and ion source utilizing sputtering with microwave plasma
JPH03227777A (ja) * 1990-01-31 1991-10-08 Matsushita Electric Ind Co Ltd 四輪操舵制御装置
JPH05254898A (ja) * 1992-03-06 1993-10-05 Shimizu Corp 低発熱水硬性配合物及び低発熱水硬性硬化物の製造方法

Also Published As

Publication number Publication date
EP0283519A4 (de) 1989-10-12
EP0283519B1 (de) 1994-04-13
EP0283519A1 (de) 1988-09-28
WO1988002546A1 (en) 1988-04-07
DE3789618D1 (de) 1994-05-19
US5022977A (en) 1991-06-11

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