DE3844114C3 - Use of a contact wire made of a lead alloy in a superconductor device - Google Patents

Use of a contact wire made of a lead alloy in a superconductor device

Info

Publication number
DE3844114C3
DE3844114C3 DE3844114A DE3844114A DE3844114C3 DE 3844114 C3 DE3844114 C3 DE 3844114C3 DE 3844114 A DE3844114 A DE 3844114A DE 3844114 A DE3844114 A DE 3844114A DE 3844114 C3 DE3844114 C3 DE 3844114C3
Authority
DE
Germany
Prior art keywords
wire
lead alloy
superconductor
alloy
lead
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE3844114A
Other languages
German (de)
Other versions
DE3844114A1 (en
DE3844114C2 (en
Inventor
Toshinori Ogashiwa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tanaka Denshi Kogyo KK
Original Assignee
Tanaka Denshi Kogyo KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP62335113A external-priority patent/JPH0221628A/en
Application filed by Tanaka Denshi Kogyo KK filed Critical Tanaka Denshi Kogyo KK
Priority to DE3844879A priority Critical patent/DE3844879C3/en
Priority claimed from DE3844879A external-priority patent/DE3844879C3/en
Publication of DE3844114A1 publication Critical patent/DE3844114A1/en
Application granted granted Critical
Publication of DE3844114C2 publication Critical patent/DE3844114C2/en
Publication of DE3844114C3 publication Critical patent/DE3844114C3/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02Bonding areas ; Manufacturing methods related thereto
    • H01L24/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00Superconducting devices
    • H10N60/80Constructional details
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04042Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554External layer
    • H01L2224/0555Shape
    • H01L2224/05556Shape in side view
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554External layer
    • H01L2224/05599Material
    • H01L2224/056Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05601Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/05616Lead [Pb] as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554External layer
    • H01L2224/05599Material
    • H01L2224/056Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05638Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/05644Gold [Au] as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/4501Shape
    • H01L2224/45012Cross-sectional shape
    • H01L2224/45015Cross-sectional shape being circular
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45101Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/45116Lead (Pb) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124Aluminium (Al) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144Gold (Au) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45163Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/45179Niobium (Nb) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48135Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484Connecting portions
    • H01L2224/4847Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48472Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485Material
    • H01L2224/48505Material at the bonding interface
    • H01L2224/48599Principal constituent of the connecting portion of the wire connector being Gold (Au)
    • H01L2224/486Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48601Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/48616Lead (Pb) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485Material
    • H01L2224/48505Material at the bonding interface
    • H01L2224/48599Principal constituent of the connecting portion of the wire connector being Gold (Au)
    • H01L2224/486Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48638Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/48644Gold (Au) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485Material
    • H01L2224/48505Material at the bonding interface
    • H01L2224/48699Principal constituent of the connecting portion of the wire connector being Aluminium (Al)
    • H01L2224/487Principal constituent of the connecting portion of the wire connector being Aluminium (Al) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48701Principal constituent of the connecting portion of the wire connector being Aluminium (Al) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/48716Lead (Pb) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485Material
    • H01L2224/48505Material at the bonding interface
    • H01L2224/48799Principal constituent of the connecting portion of the wire connector being Copper (Cu)
    • H01L2224/488Principal constituent of the connecting portion of the wire connector being Copper (Cu) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48801Principal constituent of the connecting portion of the wire connector being Copper (Cu) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/48816Lead (Pb) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485Material
    • H01L2224/48505Material at the bonding interface
    • H01L2224/48799Principal constituent of the connecting portion of the wire connector being Copper (Cu)
    • H01L2224/488Principal constituent of the connecting portion of the wire connector being Copper (Cu) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48838Principal constituent of the connecting portion of the wire connector being Copper (Cu) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/48844Gold (Au) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/858Bonding techniques
    • H01L2224/85801Soldering or alloying
    • H01L2224/85815Reflow soldering
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/00011Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/00015Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed as prior art
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01005Boron [B]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01006Carbon [C]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01013Aluminum [Al]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01014Silicon [Si]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01019Potassium [K]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01029Copper [Cu]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01031Gallium [Ga]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01032Germanium [Ge]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01041Niobium [Nb]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01043Technetium [Tc]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01046Palladium [Pd]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01047Silver [Ag]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/0105Tin [Sn]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01051Antimony [Sb]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01052Tellurium [Te]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01068Erbium [Er]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01078Platinum [Pt]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01079Gold [Au]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01082Lead [Pb]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01083Bismuth [Bi]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901Structure
    • H01L2924/1904Component type
    • H01L2924/19043Component type being a resistor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20Parameters
    • H01L2924/207Diameter ranges
    • H01L2924/20753Diameter ranges larger or equal to 30 microns less than 40 microns
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20Parameters
    • H01L2924/207Diameter ranges
    • H01L2924/20754Diameter ranges larger or equal to 40 microns less than 50 microns
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20Parameters
    • H01L2924/207Diameter ranges
    • H01L2924/20755Diameter ranges larger or equal to 50 microns less than 60 microns

Description

Bislang wurde zum Anschließen einer Supraleitervorrichtung überwiegend ein Aluminiumdraht als Kontak­ tierdraht verwendet, um die Vorrichtung an einen externen Leiter anzuschließen (JP 52-112 296 A).So far, an aluminum wire has been mainly used as a contact for connecting a superconductor device animal wire used to connect the device to an external conductor (JP 52-112 296 A).

Dieser Stand der Technik hat jedoch den Nachteil, daß, da Al noch nicht in einen supraleitenden Zustand (kritische Temperatur von Aluminium beträgt 1,2 K) bei einer Arbeitstemperatur von 4,2 K (flüssige Heliumtem­ peratur) einer Supraleitervorrichtung überführt ist, der verbleibende Widerstand eine Ursache für einen Ener­ gieverlust eines Mikrosignals bedeutet. Dies erweist sich als ein Hauptgrund für die Verringerung der Zuverläs­ sigkeit einer Supraleitervorrichtung.However, this prior art has the disadvantage that since Al is not yet in a superconducting state (critical temperature of aluminum is 1.2 K) at a working temperature of 4.2 K (liquid helium temperature temperature) of a superconductor device, the remaining resistance is a cause of an energy loss of a micro signal means. This turns out to be a main reason for the reduction in reliability liquid of a superconductor device.

Um diesen Nachteil zu überwinden, könnte man sofort an die Verwendung von Nb (9 K) oder Pb (7 K) oder an eine Legierung aus diesen Elementen, die jeweils eine kritische Temperatur von 4,2 K oder mehr besitzen, denken. Jedoch ist Nb zu hart und neigt dazu, während des Kontaktierens Chipbrüche zu erzeugen, und ist dadurch als Kontaktierdraht ungeeignet.To overcome this disadvantage, one could immediately start using Nb (9 K) or Pb (7 K) or an alloy of these elements, each of which has a critical temperature of 4.2 K or more, think. However, Nb is too hard and tends to produce chip breaks during contacting therefore unsuitable as contact wire.

Im Falle von einem Draht aus reinem Blei oder einer Legierung davon tritt die Schwierigkeit auf, diese in einen dünnen Draht zu überführen. Des weiteren bestehen Probleme dahingehend, daß nach dem Kontaktieren der schleifenbildende Zustand nicht zufriedenstellend ist.In the case of a wire made of pure lead or an alloy thereof, the difficulty arises in integrating it into one to transfer thin wire. Furthermore, there are problems in that after contacting the loop-forming condition is unsatisfactory.

Aus der GB 1 458 017 ist ein Draht aus Pb-Sn bekannt, der durch ein Flüssigabschreckverfahren hergestellt wurde. Aus Bell Laboratories Record, November 1957, Seiten 441 bis 445 ist weiterhin bekannt, Drähte aus Blei oder dessen Legierungen in Halbleitervorrichtungen zu verwenden. Die Verwendung von Kontaktierdrähten aus Niob in Supraleiterchips wird in den US 4 660 061 und die Verwendung eines Kontaktier­ drahtes mit einem Kern und einer Hülle aus Nb und Al, Nb und Cu oder Nb und Au in Supraleitervorrichtungen wird in der JP-58-125882 A beschrieben.From GB 1 458 017 a wire made of Pb-Sn is known which is made by a liquid quenching process was produced. From Bell Laboratories Record, November 1957, pages 441 to 445 it is also known To use wires made of lead or its alloys in semiconductor devices. The use of Contact wires made of niobium in superconductor chips are described in US 4,660,061 and the use of a contactor wire with a core and a sheath of Nb and Al, Nb and Cu or Nb and Au in superconductor devices is described in JP-58-125882 A.

Aufgabe der vorliegenden Erfindung ist es, einen Kontaktierdraht aus einer Bleilegierung für die Verwendung zum Kontaktieren in einer Supraleitervorrichtung zur Verfügung zu stellen.The object of the present invention is to use a contact wire made of a lead alloy for use to provide for contacting in a superconductor device.

Diese Aufgabe wird durch die Verwendung gemäß Anspruch 1 gelöst.This object is achieved by the use according to claim 1.

Die Bleilegierung schließt als weiteres Element Cu, Ga, Ge, Se, Ag, In, Sn, Sb, Te, Au, Tl, Bi, Pd und Pt ein. Durch die Zugabe des Zusatzelementes oder der Zusatzelemente wird der Bleidraht in seiner Zugfestigkeit gesteigert, um günstige Kontaktiereigenschaften zu erhalten, und zusätzlich wird eine Spannung, bedingt durch thermische Verzerrung, unterdrückt, wenn er von Raumtemperatur auf 4,2 K abgekühlt oder von 4,2 K auf Raumtemperatur erwärmt wird.The lead alloy includes Cu, Ga, Ge, Se, Ag, In, Sn, Sb, Te, Au, Tl, Bi, Pd and Pt as a further element. The addition of the additional element or elements increases the tensile strength of the lead wire increased in order to obtain favorable contacting properties, and in addition a voltage is caused by thermal distortion, suppressed when cooled from room temperature to 4.2 K or from 4.2 K. Room temperature is warmed.

Fig. 1 ist ein Querschnitt einer Supraleitervorrichtung; Fig. 1 is a cross-section of a superconductor device;

Fig. 2 ist ein Längsschnitt eines Teiles davon, das als A bezeichnet wird; und Fig. 2 is a longitudinal section of a part thereof referred to as A; and

Fig. 3 ist ein Querschnitt einer veränderten Ausführungsform der Fig. 1. FIG. 3 is a cross section of a modified embodiment of FIG. 1.

Fig. 1 zeigt eine Supraleitervorrichtung. In der Figur bezeichnet (1) eine Kunststoff- oder keramische Grund­ platte, (2) einen Supraleiterchip, (3) externe Leiter und (4) einen Draht aus einer Pb-Legierung zum Kontaktie­ ren. Fig. 1 shows a superconductor device. In the figure, ( 1 ) denotes a plastic or ceramic base plate, ( 2 ) a superconductor chip, ( 3 ) external conductor and ( 4 ) a wire made of a Pb alloy for contacting.

Der Draht (4) wird hergestellt, indem man eine Legierung, die sich aus Blei als ein Hauptelement und einem dazugegebenen Zusatzelement zusammensetzt, über ein Flüssigabschreckverfahren erzeugt, und dann die Le­ gierung in einen dünnen Draht über ein Drahtziehverfahren überführt. Der Durchmesser des Drahtes (4) ist 30 bis 50 µm.The wire ( 4 ) is produced by producing an alloy composed of lead as a main element and an additional element added thereto by a liquid quenching process, and then converting the alloy into a thin wire by a wire drawing process. The diameter of the wire ( 4 ) is 30 to 50 microns.

Der Draht (4) ist an einem Ende mit dem Chip (2) und am anderen Ende mit dem externen Leiter (3) in solch einer Weise verbunden, daß durch ein Keil-Kontaktierverfahren eine Schleife gebildet wird. Der Chip (2) besitzt eine laminare Struktur aus einer Si-Schicht und einer Nb-Schicht, die einen Schaltkreis bilden. Ein verbindender Teil ist mit einer Oberflächenmetallschicht (5) aus dem gleichen Material wie das des Drahtes (4) versehen. Der externe Leiter (3) ist auch mit einer Oberflächenmetallschicht (6) versehen. In Fig. 2 bezeichnet (7) eine Schutz­ schicht, die aus einem Isoliermaterial gebildet wird. Das Oberflächenmetall aus dem gleichen Material wie das des Drahtes (4) bedeutet, daß in dem Fall, bei dem der Draht (4) Pb-In-Au ist, Pb-In-Au auch für die Oberflächenmetallschichten (5, 6) verwendet wird. In ähnlicher Weise wird in dem Fall, in dem der Draht (4) Pb-In-Ag, Pb-In-Cu, Pb-Bi und Pb-Sb ist, eine Legierung aus der gleichen Gruppe dieser Elemente verwendet.The wire ( 4 ) is connected at one end to the chip ( 2 ) and at the other end to the external conductor ( 3 ) in such a way that a loop is formed by a wedge contacting method. The chip ( 2 ) has a laminar structure of an Si layer and an Nb layer, which form a circuit. A connecting part is provided with a surface metal layer ( 5 ) made of the same material as that of the wire ( 4 ). The external conductor ( 3 ) is also provided with a surface metal layer ( 6 ). In Fig. 2 denotes ( 7 ) a protective layer which is formed from an insulating material. The surface metal made of the same material as that of the wire ( 4 ) means that in the case where the wire ( 4 ) is Pb-In-Au, Pb-In-Au is also used for the surface metal layers ( 5 , 6 ) . Similarly, in the case where the wire ( 4 ) is Pb-In-Ag, Pb-In-Cu, Pb-Bi and Pb-Sb, an alloy from the same group of these elements is used.

Für den Fall, daß der Draht (4) Pb-In-Au ist, wird z. B. PbIn12Au4 für die Oberflächenmetallschichten (5, 6) eingesetzt.In the event that the wire ( 4 ) is Pb-In-Au, z. B. PbIn 12 Au 4 used for the surface metal layers ( 5 , 6 ).

Pb-In und Au können auch für die Oberflächenmetallschichten (5, 6) verwendet werden.Pb-In and Au can also be used for the surface metal layers ( 5 , 6 ).

In diesem Fall kann jede der Legierungen Pb-In-Au, Pb-In-Ag, Pb-In-Cu, Pb-Bi und Pb-Sb mit unzufriedenstellenden Ergebnissen für den Draht (4) angewandt werden.In this case, any of the alloys Pb-In-Au, Pb-In-Ag, Pb-In-Cu, Pb-Bi and Pb-Sb can be applied to the wire ( 4 ) with unsatisfactory results.

Um den Kontakt mit der Nb-Schicht zu verstärken und um ein Abschälen zu verhindern, wird Gold für die Oberflächenmetallschicht (5) verwendet.To increase contact with the Nb layer and to prevent peeling, gold is used for the surface metal layer ( 5 ).

Cu wird im allgemeinen für den externen Leiter (3) eingesetzt. In diesem Fall ist es bei der Oberflächenmetall­ schicht (6) nicht unbedingt erforderlich, das gleiche Material wie das des Drahtes (4) zu verwenden.Cu is generally used for the external conductor ( 3 ). In this case, it is not absolutely necessary for the surface metal layer ( 6 ) to use the same material as that of the wire ( 4 ).

In der Ausführungsform der Fig. 1 wird ein Fall dargestellt, bei dem der Supraleiterchip (2) und der externe Leiter (3) untereinander über den Legierungsdraht (4) verbunden sind. Jedoch sind in einer Supraleitervorrich­ tung, in der die Grundplatte (1) mit einer Vielzahl von Supraleiterchips versehen ist, manchmal die Supraleiter­ chips (2, 2) untereinander über den Legierungsdraht (4) verbunden (siehe Fig. 3).In the embodiment of FIG. 1, a case is shown in which the superconductor chip ( 2 ) and the external conductor ( 3 ) are connected to one another via the alloy wire ( 4 ). However, in a superconductor device in which the base plate ( 1 ) is provided with a plurality of superconductor chips, sometimes the superconductor chips ( 2 , 2 ) are connected to one another via the alloy wire ( 4 ) (see FIG. 3).

Obwohl in der Fig. 3 zwei Supraleiterchips gezeigt sind, können viel mehr Supraleiterchips gemäß der Notwendigkeit zur Verfügung gestellt werden.Although two superconductor chips are shown in FIG. 3, much more superconductor chips can be provided as needed.

Beispiele für die Drähte, die durch ein Flüssigabschreckverfahren hergestellt werden, sind in der folgenden Tabelle gezeigt. Die Tabelle zeigt die kritische Temperatur (Tc), die Zugfestigkeit, die Dehnung, gute oder schlechte Eigenschaften hinsichtlich des Schleifenbildungszustandes und der Drahtziehbearbeitbarkeit von Bei­ spielen, die gemäß der vorliegenden Erfindung und von Gegenbeispielen verwendet werden.Examples of the wires made by a liquid quenching process are as follows Shown in the table. The table shows the critical temperature (Tc), tensile strength, elongation, good or poor properties in terms of looping condition and wire drawing machinability of Bei  play, which are used according to the present invention and counterexamples.

Jeder der Drähte wurde in einen dünnen Draht mit einem Durchmesser von 40 µm über eine Drahtziehvor­ richtung gezogen. Die Zeichen o in der Bewertungsspalte hinsichtlich der Drahtziehbearbeitbarkeit zeigen an, daß der Draht zu einem Durchmesser von 40 µm gezogen wurde, ohne einen Bruch des Drahtes zu erzeugen, wohingegen die Zeichen × bedeuten, daß ein Bruch des Drahtes während der Drahtziehbehandlung eintrat.Each of the wires was cut into a thin wire with a diameter of 40 µm by wire drawing pulled towards. The characters o in the wire drawing machinability rating column indicate that the wire was drawn to a diameter of 40 µm without causing the wire to break, whereas the × signifies that the wire broke during the wire drawing treatment.

Die Funktion und Wirkung der vorliegenden Erfindung wird im folgenden beschrieben.The function and effect of the present invention will now be described.

  • (1) Ein Draht aus einer erfindungsgemäß zu verwendenden Bleilegierung zeigt die folgenden Eigenschaften im Vergleich zu einem Draht, der über ein übliches Verfestigungsverfahren hergestellt wurde.(1) A wire made of a lead alloy to be used in the present invention shows the following properties in Compared to a wire made using a standard hardening process.
  • (a) Einführung einer Reihe von Matrixdefekten;(a) introduction of a number of matrix defects;
  • (b) Miniaturisierung der Kristallkörner;(b) miniaturization of the crystal grains;
  • (c) Miniaturisierung und Dispersion einer Verbindungsphase;(c) miniaturization and dispersion of a compound phase;
  • (d) Erzeugung einer metastabilen Phase;(d) creating a metastable phase;
  • (e) Struktur mit einer erzwungenen, festen Lösung zwischen den Elementen;(e) structure with a forced, solid solution between the elements;
  • (f) bedeutende Verbesserung der Zugfestigkeit.(f) Significant improvement in tensile strength.

Dadurch konnten Kontaktiereigenschaften erreicht werden, bei denen die Drahtziehbearbeitbarkeit eines Bleidrahtes verbessert wird, und der Draht kann dünner gestaltet werden, so daß er für den Zweck des Kontaktierens gut genug ist, und der Schleifenbildungszustand wird nach dem Kontaktieren zufriedenstellend.This made it possible to achieve contacting properties in which the wire drawing machinability of a Lead wire is improved, and the wire can be made thinner so that it can be used for the purpose of  Contacting is good enough, and the looping state becomes satisfactory after contacting.

  • (2) Bei der Arbeitstemperatur (4,2 K) der Supraleitervorrichtung wird auch der Bleidraht in einen supraleiten­ den Zustand überführt, und als ein Ergebnis davon sind der Supraleiterchip und der externe Leiter oder ein Supraleiterchip und ein anderer Supraleiterchip untereinander in dem supraleitenden Zustand verbunden. Deshalb entsteht kein Energieverlust von Mikrosignalen, und damit ist die Zuverlässigkeit einer Supraleitervor­ richtung, bei der ein Kontaktierdraht aus der in spezieller Weise hergestellten Pb-Legierung verwendet wird, wesentlich gesteigert.(2) At the working temperature (4.2 K) of the superconductor device, the lead wire is also turned into a superconductor transferred the state, and as a result of this, the superconductor chip and the external conductor are or one Superconductor chip and another superconductor chip connected to each other in the superconducting state. Therefore, there is no energy loss from micro signals, and thus the reliability of a superconductor is direction in which a contact wire made of the specially produced Pb alloy is used, significantly increased.

Claims (7)

1. Verwendung eines Kontaktierdrahtes aus einer Bleilegierung, der hergestellt wurde, indem man eine Legierung aus Blei als Hauptelement und mindestens einem weiteren Element über ein Flüssigabschreckverfahren erzeugt und dann die Legierung über ein Drahtziehverfahren zu einem dünnen Draht mit einem Durchmesser von 30 bis 50 µm formt, zur Kontaktierung einer Supraleitervorrichtung.1. Using a lead alloy lead wire made by making a Lead alloy as the main element and at least one other element generated by a liquid quenching process and then the alloy into a wire drawing process thin wire with a diameter of 30 to 50 µm forms, for contacting one Superconductor device. 2. Verwendung gemäß Anspruch 1, wobei das weitere Element mindestens ein Element aus der Reihe Cu, Ga, Ge, Se, Ag, In, Sn, Sb, Te, Au, Tl, Bi, Pd und Pt ist.2. Use according to claim 1, wherein the further element at least one element from the series Cu, Ga, Ge, Se, Ag, In, Sn, Sb, Te, Au, Tl, Bi, Pd and Pt. 3. Verwendung gemäß Anspruch 2, wobei die Bleilegierung Pb-In-Au ist.3. Use according to claim 2, wherein the lead alloy is Pb-In-Au. 4. Verwendung gemäß Anspruch 2. wobei die Bleilegierung Pb-In-Ag ist.4. Use according to claim 2, wherein the lead alloy is Pb-In-Ag. 5. Verwendung gemäß Anspruch 2, wobei die Bleilegierung Pb-In-Cu ist.5. Use according to claim 2, wherein the lead alloy is Pb-In-Cu. 6. Verwendung gemäß Anspruch 2, wobei die Bleilegierung Pb-Bi ist.6. Use according to claim 2, wherein the lead alloy is Pb-Bi. 7. Verwendung gemäß Anspruch 2, wobei die Bleilegierung Pb-Sb ist.7. Use according to claim 2, wherein the lead alloy is Pb-Sb.
DE3844114A 1987-12-28 1988-12-28 Use of a contact wire made of a lead alloy in a superconductor device Expired - Fee Related DE3844114C3 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DE3844879A DE3844879C3 (en) 1987-12-28 1988-12-28 Superconductor device with a contact wire

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP62335113A JPH0221628A (en) 1987-12-28 1987-12-28 Bonding pb alloy wire for superconducting element and superconducting device
DE3844879A DE3844879C3 (en) 1987-12-28 1988-12-28 Superconductor device with a contact wire

Publications (3)

Publication Number Publication Date
DE3844114A1 DE3844114A1 (en) 1989-07-06
DE3844114C2 DE3844114C2 (en) 1995-01-19
DE3844114C3 true DE3844114C3 (en) 1999-03-18

Family

ID=25875902

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3844114A Expired - Fee Related DE3844114C3 (en) 1987-12-28 1988-12-28 Use of a contact wire made of a lead alloy in a superconductor device

Country Status (1)

Country Link
DE (1) DE3844114C3 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4102891A1 (en) * 1991-01-31 1992-08-06 Siemens Ag Solderable, superconducting line and use of the line

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2511882A1 (en) * 1974-03-20 1975-09-25 Int Lead Zinc Res SUPRAL CONDUCTIVE ALLOYS OF TYPE II, PROCESS FOR THEIR PRODUCTION AND THEIR USE IN SUPRAL CONDUCTIVE ELEMENTS
GB1458017A (en) * 1972-11-14 1976-12-08 Allied Chem Method of and apparatus for spinning metallic filaments
DE2457488B2 (en) * 1973-12-28 1978-11-09 International Business Machines Corp., Armonk, N.Y. (V.St.A.) Electrical connection between components made of different materials, as well as manufacturing processes
JPS58104175A (en) * 1981-12-15 1983-06-21 Nippon Telegr & Teleph Corp <Ntt> Formation of lead-bismuth alloy film
JPS61210140A (en) * 1985-03-14 1986-09-18 Takeshi Masumoto Superconductive material containing metallic particles dispersed in amorphous alloy
US4660061A (en) * 1983-12-19 1987-04-21 Sperry Corporation Intermediate normal metal layers in superconducting circuitry
JPH0688483A (en) * 1992-09-08 1994-03-29 Kubota Corp Drawing-in device of pipe to be buried to underground

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1458017A (en) * 1972-11-14 1976-12-08 Allied Chem Method of and apparatus for spinning metallic filaments
DE2457488B2 (en) * 1973-12-28 1978-11-09 International Business Machines Corp., Armonk, N.Y. (V.St.A.) Electrical connection between components made of different materials, as well as manufacturing processes
DE2511882A1 (en) * 1974-03-20 1975-09-25 Int Lead Zinc Res SUPRAL CONDUCTIVE ALLOYS OF TYPE II, PROCESS FOR THEIR PRODUCTION AND THEIR USE IN SUPRAL CONDUCTIVE ELEMENTS
JPS58104175A (en) * 1981-12-15 1983-06-21 Nippon Telegr & Teleph Corp <Ntt> Formation of lead-bismuth alloy film
US4660061A (en) * 1983-12-19 1987-04-21 Sperry Corporation Intermediate normal metal layers in superconducting circuitry
JPS61210140A (en) * 1985-03-14 1986-09-18 Takeshi Masumoto Superconductive material containing metallic particles dispersed in amorphous alloy
JPH0688483A (en) * 1992-09-08 1994-03-29 Kubota Corp Drawing-in device of pipe to be buried to underground

Non-Patent Citations (6)

* Cited by examiner, † Cited by third party
Title
DE-Buch: "Gmelins Handbuch der anorganischen Chemie", 8. Aufl., Bd. "Blei", Teil B1, System-Nr. 47, Verlag Chemie GmbH, Weinheim 1972, S. 279 u. 280 *
DE-Z: Z. Metallkunde, Bd. 75, 1984, S. 709-713 *
JP 52-112 296 (engl. Abstract) *
JP 58-125 882 (engl. Abstract) *
US-Z.: Bell Laboratories Record, Nov. 1957, S. 441-445 *
US-Z: J. Less-Common Metals, Bd. 98, 1984,S.65-70 *

Also Published As

Publication number Publication date
DE3844114A1 (en) 1989-07-06
DE3844114C2 (en) 1995-01-19

Similar Documents

Publication Publication Date Title
DE3237385C2 (en)
DE2339525C2 (en) Process for the manufacture of a superconductor
DE3645066C2 (en)
DE3018105C2 (en) Process for the manufacture of a conductor for electrical cables or lines
DE2910959A1 (en) STRUCTURED VOLTAGE RELIEF BUFFER MADE OF COPPER AND SEMI-CONDUCTOR COMPONENTS CONTAINING THIS BUFFER
DE2602735A1 (en) SUPRAL LADDER
EP2917922B1 (en) Superconducting coil device comprising coil winding and contacts
DE3610587A1 (en) WIRE SUITABLE FOR BONDING SEMICONDUCTOR DEVICES AND METHOD FOR THE PRODUCTION THEREOF
DE112008000039T5 (en) Superconducting tape and process for its production
DE4230030A1 (en) Chip housing with thin inner leads - has reduced vol. of housing body esp. composed of cast epoxide] material
DE2412573A1 (en) METHOD OF MANUFACTURING A DIVIDED SUPRALCONDUCTIVE WIRE
DE4016384A1 (en) ELECTRONIC CIRCUIT DEVICE
EP0130442B1 (en) Very low resistance connecting device between the end pieces of two superconductors
DE3844114C3 (en) Use of a contact wire made of a lead alloy in a superconductor device
DE3540070A1 (en) SUPER-CONDUCTING CONNECTOR WITH SEVERAL LADDERS AND METHOD FOR THE PRODUCTION THEREOF
DE3905424C2 (en) Process for producing a superconducting connection between oxide superconductors
DE4215471A1 (en) Semiconductor package e.g. lead-on-chip, small outline J-lead type - has chip with several solder points which are soldered to numerous inner lines of conductor frame
DE3613594C2 (en)
EP0055804A1 (en) Stabilized superconductor in the form of a cable for alternating fields
DE3844879C3 (en) Superconductor device with a contact wire
DE4433503C2 (en) Method of manufacturing a semiconductor device
DE2826810C2 (en)
EP0101592A2 (en) Gold wire for semiconductor components
DE2331919A1 (en) METHOD OF MANUFACTURING A SUPRAL CONDUCTOR WITH A SUPRAL CONDUCTING INTERMETALLIC JOINT FROM AT LEAST TWO ELEMENTS
EP0683533B1 (en) Method of making high Tc multifilament superconductors

Legal Events

Date Code Title Description
8110 Request for examination paragraph 44
8125 Change of the main classification

Ipc: H01L 39/06

8172 Supplementary division/partition in:

Ref country code: DE

Ref document number: 3844879

Format of ref document f/p: P

Q171 Divided out to:

Ref country code: DE

Ref document number: 3844879

AH Division in

Ref country code: DE

Ref document number: 3844879

Format of ref document f/p: P

AH Division in

Ref country code: DE

Ref document number: 3844879

Format of ref document f/p: P

D2 Grant after examination
8363 Opposition against the patent
8366 Restricted maintained after opposition proceedings
8305 Restricted maintenance of patent after opposition
AH Division in

Ref country code: DE

Ref document number: 3844879

Format of ref document f/p: P

D4 Patent maintained restricted
AH Division in

Ref country code: DE

Ref document number: 3844879

Format of ref document f/p: P

8339 Ceased/non-payment of the annual fee