DE3844879C3 - Superconductor device with a contact wire - Google Patents

Superconductor device with a contact wire

Info

Publication number
DE3844879C3
DE3844879C3 DE3844879A DE3844879A DE3844879C3 DE 3844879 C3 DE3844879 C3 DE 3844879C3 DE 3844879 A DE3844879 A DE 3844879A DE 3844879 A DE3844879 A DE 3844879A DE 3844879 C3 DE3844879 C3 DE 3844879C3
Authority
DE
Germany
Prior art keywords
wire
superconductor
superconductor device
contact wire
alloy
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE3844879A
Other languages
German (de)
Other versions
DE3844879A1 (en
DE3844879C2 (en
Inventor
Toshinori Ogashiwa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tanaka Denshi Kogyo KK
Original Assignee
Tanaka Denshi Kogyo KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP62335113A external-priority patent/JPH0221628A/en
Application filed by Tanaka Denshi Kogyo KK filed Critical Tanaka Denshi Kogyo KK
Priority to DE3844114A priority Critical patent/DE3844114C3/en
Priority claimed from DE3844114A external-priority patent/DE3844114C3/en
Publication of DE3844879A1 publication Critical patent/DE3844879A1/en
Publication of DE3844879C2 publication Critical patent/DE3844879C2/en
Application granted granted Critical
Publication of DE3844879C3 publication Critical patent/DE3844879C3/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67138—Apparatus for wiring semiconductor or solid state device
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    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
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    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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  • Engineering & Computer Science (AREA)
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  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Superconductors And Manufacturing Methods Therefor (AREA)
  • Conductive Materials (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Description

Die Erfindung betrifft eine Supraleitervorrichtung mit einem Kontaktierdraht.The invention relates to a superconductor device with a contact wire.

Derartige Supraleitervorrichtungen sind bsplw. aus der JP 52-112 296 A (engl. Abstract) oder der US 4 660 061 bekannt.Such superconductor devices are, for example. from JP 52-112 296 A (English abstract) or US 4,660,061 known.

Bei der aus der JP 52-112 296 A bekannten Supraleitervorrichtung wurde zum Anschließen ein Aluminiumdraht als Kontaktierdraht verwendet, um die Vorrichtung an einen externen Leiter anzuschließen.In the superconductor device known from JP 52-112 296 A, an aluminum wire was used for connection used as a contact wire to connect the device to an external conductor.

Dieser Stand der Technik besitzt jedoch den Nachteil, daß, da Al noch nicht in einem supraleitenden Zustand (kritische Temperatur von Aluminium beträgt 1,2 K) bei einer Arbeitstemperatur von 4,2 K (flüssige Heliumtemperatur) einer Supraleitervorrichtung überführt ist, der verbleibende Widerstand eine Ursache für einen Energieverlust eines Mikrosignals bedeutet. Dies erweist sich als ein Hauptgrund für die Verringerung der Zuverlässigkeit einer Supraleitervorrichtung.However, this prior art has the disadvantage that, since Al is not yet in a superconducting state (critical temperature of aluminum is 1.2 K) at a working temperature of 4.2 K (liquid helium temperature) is transferred to a superconductor device, the remaining resistance is a cause of an energy loss of a microsignal means. This turns out to be a main reason for the decrease in reliability a superconductor device.

Um diesen Nachteil zu überwinden, könnte man sofort an die Verwendung von Nb (9 K) (vgl. die US 4 660 061) oder Pb (7 K) oder an eine Legierung aus diesen Elementen, die jeweils eine kritische Temperatur von 4,2 K oder mehr besitzen, denken. Jedoch ist Nb zu hart und neigt dazu, während des Kontaktierens Chipbrüche zu erzeugen, und ist dadurch als Kontaktierdraht ungeeignet.To overcome this disadvantage, one could immediately use Nb (9 K) (see US Pat. No. 4,660,061). or Pb (7 K) or an alloy of these elements, each with a critical temperature of 4.2 K or own more, think. However, Nb is too hard and tends to crack during contacting generate, and is therefore unsuitable as a contact wire.

Im Falle von einem Draht aus reinem Blei oder einer Legierung davon tritt die Schwierigkeit auf, diese in einen dünnen Draht zu überführen. Des weiteren bestehen Probleme dahingehend, daß nach dem Kontaktieren der schleifenbildende Zustand nicht zufriedenstellend ist.In the case of a wire made of pure lead or an alloy thereof, the difficulty arises in integrating it into one to transfer thin wire. Furthermore, there are problems in that after contacting the loop-forming condition is unsatisfactory.

Aus der GB 1458017 ist bekannt, daß ein Draht aus einer Bleilegierung, der mittels eines Flüssigabschreckverfahrens hergestellt wurde, ein anderes inneres Gefüge und eine höhere Zugfestigkeit hat als ein gezogener Draht; über die Eigenschaften als Kontaktierdraht in einer Supraleitervorrichtung ist in der genannten GB-Schrift nichts ausgesagt.From GB 1458017 it is known that a wire made of a lead alloy, which by means of a liquid quenching process has a different internal structure and a higher tensile strength than a drawn one Wire; about the properties as a contact wire in a superconductor device is in the aforementioned GB document nothing said.

Aufgabe der Erfindung ist es, eine hochzuverlässige Supraleitervorrichtung zu schaffen.The object of the invention is to provide a highly reliable superconductor device.

Diese Aufgabe wird durch eine Supraleitervorrichtung mit den Merkmalen des Anspruchs 1 gelöst.This object is achieved by a superconductor device with the features of claim 1.

Durch die Zugabe des Zusatzelementes oder der Zusatzelemente wird der Bleidraht in seiner Zugfestigkeit gesteigert, um günstige Kontaktiereigenschaften zu erhalten, und zusätzlich wird eine Spannung, bedingt durch thermische Verzerrung, unterdrückt, wenn er von Raumtemperatur auf 4,2°K abgekühlt oder von 4,2°K auf Raumtemperatur erwärmt wird.The addition of the additional element or elements increases the tensile strength of the lead wire increased in order to obtain favorable contacting properties, and in addition a voltage is caused by thermal distortion, suppressed when cooled from room temperature to 4.2 ° K or from 4.2 ° K Room temperature is warmed.

In einer vorteilhaften Ausgestaltung schließt das Zusatzelement mindestens ein Element aus der Reihe Cu, Ga, Ge, Se, Ag, In, Sn, Sb, Te, Au, Tl, Bi, Pd und Pt ein. Weitere vorteilhafte Ausgestaltungen sind Gegenstand der Unteransprüche 3 bis 10.In an advantageous embodiment, the additional element includes at least one element from the series Cu, Ga, Ge, Se, Ag, In, Sn, Sb, Te, Au, Tl, Bi, Pd and Pt. Further advantageous embodiments are the subject of Subclaims 3 to 10.

Ausführungsformen der Erfindung werden in der folgenden Beschreibung anhand der Zeichnungen erläutert.Embodiments of the invention are explained in the following description with reference to the drawings.

Fig. 1 ist ein Querschnitt einer Supraleitervorrichtung gemäß einer Ausführungsform der vorliegenden Erfindung; Fig. 1 is a cross section of a superconducting device according to an embodiment of the present invention;

Fig. 2 ist ein Längsschnitt eines Teiles davon, das als A bezeichnet wird; und Fig. 2 is a longitudinal section of a part thereof referred to as A; and

Fig. 3 ist ein Querschnitt einer veränderten Ausführungsform der Fig. 1. FIG. 3 is a cross section of a modified embodiment of FIG. 1.

In der Fig. 1 bezeichnet 1 eine Kunststoff- oder keramische Grundplatte, 2 einen Supraleiterchip, 3 externe Leiter und 4 einen Legierungsdraht zum Kontaktieren.In Fig. 1 2, 1 denotes a plastic or ceramic base plate, a superconductor chip, 3 and 4, a conductor external alloy wire for contacting.

Der Draht 4 wird hergestellt, indem man eine Legierung, die sich aus Blei als ein Hauptelement und einem dazugegebenen Zusatzelement zusammensetzt, über ein Flüssigabschreckverfahren erzeugt, und dann die Legierung in einen dünnen Draht über ein Drahtziehverfahren überführt. Der Durchmesser des Drahtes 4 ist 30 bis 50 µm.The wire 4 is manufactured by producing an alloy composed of lead as a main element and an additional element added thereto by a liquid quenching process, and then converting the alloy into a thin wire by a wire drawing process. The diameter of the wire 4 is 30 to 50 microns.

Der Draht 4 ist an einem Ende mit dem Chip 2 und am anderen Ende mit dem externen Leiter 3 in solch einer Weise verbunden, daß durch ein Keil-Kontaktierverfahren eine Schleife gebildet wird. Der Chip 2 besitzt eine laminare Struktur aus einer Si-Schicht und einer Nb-Schicht, die einen Schaltkreis bilden. Ein mit dem Draht zu verbindender Teil des Chips 2 ist mit einer Oberflächenmetallschicht 5 aus dem gleichen Material wie das des Drahtes 4 versehen. Der externe Leiter 3 ist auch mit einer Oberflächenmetallschicht 6 versehen. In Fig. 2 bezeichnet 7 eine Schutzschicht, die aus einem Isoliermaterial gebildet wird. Das Oberflächenmetall aus dem gleichen Material wie das des Drahtes 4 bedeutet, daß in dem Fall, in dem der Draht 4 Pb-In-Au ist, Pb-In-Au auch für die Oberflächenmetallschichten 5, 6 verwendet wird. In ähnlicher Weise wird in dem Fall, in dem der Draht 4 Pb-In-Ag, Pb-In-Cu, Pb-Bi und Pb-Sb ist, eine Legierung aus der gleichen Gruppe dieser Elemente verwendet.The wire 4 is connected at one end to the chip 2 and at the other end to the external conductor 3 in such a way that a loop is formed by a wedge contacting method. The chip 2 has a laminar structure of an Si layer and an Nb layer, which form a circuit. A part of the chip 2 to be connected to the wire is provided with a surface metal layer 5 made of the same material as that of the wire 4 . The external conductor 3 is also provided with a surface metal layer 6 . In Fig. 2, 7 denotes a protective layer which is formed from an insulating material. The surface metal made of the same material as that of the wire 4 means that in the case where the wire 4 is Pb-In-Au, Pb-In-Au is also used for the surface metal layers 5 , 6 . Similarly, in the case where the wire 4 is Pb-In-Ag, Pb-In-Cu, Pb-Bi and Pb-Sb, an alloy from the same group of these elements is used.

Für den Fall, daß der Draht 4 Pb-In-Au ist, wird z. B. PbIn12Au4 für die Oberflächenmetallschichten 5, 6 eingesetzt.In the event that the wire is 4 Pb-In-Au, e.g. B. PbIn 12 Au 4 used for the surface metal layers 5 , 6 .

Pb-In und Au können auch für die Oberflächenmetallschichten 5, 6 verwendet werden.Pb-In and Au can also be used for the surface metal layers 5 , 6 .

In diesem Fall kann jede der Legierungen Pb-In-Au, Pb-In-Ag, Pb-In-Cu, Pb-Bi und Pb-Sb mit zufriedenstellenden Ergebnissen für den Draht 4 angewandt werden.In this case, any of the alloys Pb-In-Au, Pb-In-Ag, Pb-In-Cu, Pb-Bi and Pb-Sb can be applied to the wire 4 with satisfactory results.

Um den Kontakt mit der Nb-Schicht zu verstärken und um ein Abschälen zu verhindern, wird Gold für die Oberflächenmetallschicht 5 verwendet.To increase contact with the Nb layer and to prevent peeling, gold is used for the surface metal layer 5 .

Cu wird im allgemeinen für den externen Leiter 3 eingesetzt. In diesem Fall ist es bei der Oberflächenmetallschicht 6 nicht unbedingt erforderlich, das gleiche Material wie das des Drahtes 4 zu verwenden.Cu is generally used for the external conductor 3 . In this case, it is not absolutely necessary for the surface metal layer 6 to use the same material as that of the wire 4 .

In der Ausführungsform der Fig. 1 wird ein Fall dargestellt, bei dem der Supraleiterchip 2 und der externe Leiter 3 untereinander über den Legierungsdraht 4 verbunden sind. Jedoch sind in einer Supraleitervorrichtung, in der die Grundplatte 1 mit einer Vielzahl von Supraleiterchips versehen ist, manchmal die Supraleiterchips 2, 2 untereinander über den Legierungsdraht 4 verbunden (siehe Fig. 3).In the embodiment of FIG. 1, a case is shown in which the superconductor chip 2 and the external conductor 3 are connected to one another via the alloy wire 4 . However, in a superconductor device in which the base plate 1 is provided with a plurality of superconductor chips, the superconductor chips 2 , 2 are sometimes connected to each other via the alloy wire 4 (see Fig. 3).

Obwohl in der Fig. 3 zwei Supraleiterchips gezeigt sind, können viel mehr Supraleiterchips gemäß der Notwendigkeit zur Verfügung gestellt werden. Although two superconductor chips are shown in FIG. 3, much more superconductor chips can be provided as needed.

Beispiele für die Drähte, die durch ein Flüssigabschreckverfahren hergestellt werden, sind in der folgenden Tabelle gezeigt. Die Tabelle zeigt die kritische Temperatur (Tc), die Zugfestigkeit, die Dehnung, gute oder schlechte Eigenschaften hinsichtlich des Schleifenbildungszustandes und der Drahtziehbearbeitbarkeit von Drähten, die in der vorliegenden Erfindung eingesetzt werden, und von Vergleichsbeispielen.Examples of the wires made by a liquid quenching process are as follows Shown in the table. The table shows the critical temperature (Tc), tensile strength, elongation, good or poor properties in terms of looping condition and wire drawing machinability of Wires used in the present invention and comparative examples.

Jeder der Drähte wurde in einem dünnen Draht mit einem Durchmesser von 40 µm über eine Drahtziehvorrichtung gezogen. Die Zeichen ○ in der Bewertungsspalte hinsichtlich der Drahtziehbearbeitbarkeit zeigen an, daß der Draht zu einem Durchmesser von 40 µm gezogen wurde, ohne einen Bruch des Drahtes zu erzeugen, wohingegen die Zeichen × bedeuten, daß ein Bruch des Drahtes während der Drahtziehbehandlung eintrat.
Each of the wires was drawn in a thin wire with a diameter of 40 µm over a wire drawing device. The characters ○ in the wire drawing machinability evaluation column indicate that the wire was drawn to a diameter of 40 µm without causing the wire to break, whereas the characters × indicate that the wire broke during the wire drawing treatment.

Die Funktion und Wirkung der vorliegenden Erfindung wird im folgenden beschrieben:The function and effect of the present invention is described below:

Ein Draht aus einer Bleilegierung, der durch ein Flüssigabschreckverfahren hergestellt wurde, zeigt die folgenden Eigenschaften im Vergleich zu einem Draht, der über ein übliches Verfestigungsverfahren hergestellt wurde.
A lead alloy wire made by a liquid quenching process shows the following properties compared to a wire made by a conventional solidification process.

  • (a) Einführung einer Reihe von Matrixdefekten;(a) introduction of a number of matrix defects;
  • (b) Miniaturisierung der Kristallkörner;(b) miniaturization of the crystal grains;
  • (c) Miniaturisierung und Dispersion einer Verbindungsphase;(c) miniaturization and dispersion of a compound phase;
  • (d) Erzeugung einer metastabilen Phase;(d) creating a metastable phase;
  • (e) Struktur mit einer erzwungenen, festen Lösung zwischen den Elementen;(e) structure with a forced, solid solution between the elements;
  • (f) bedeutende Verbesserung der Zugfestigkeit.(f) Significant improvement in tensile strength.

Dadurch konnten Kontaktiereigenschaften erreicht werden, bei denen die Drahtziehbearbeitbarkeit eines Bleidrahtes verbessert wird, und der Draht kann dünner gestaltet werden, so daß er für den Zweck des Kontaktierens gut genug ist, und der Schleifenbildungszustand wird nach dem Kontaktieren zufriedenstellend. Damit wird die Zuverlässigkeit der Supraleitervorrichtung wesentlich gesteigert.This made it possible to achieve contacting properties in which the wire drawing machinability of a Lead wire is improved, and the wire can be made thinner so that it can be used for the purpose of Contacting is good enough, and the looping state becomes satisfactory after contacting. This significantly increases the reliability of the superconductor device.

Claims (10)

1. Supraleitervorrichtung mit einem Kontaktierdraht, dadurch gekennzeichnet, daß der Kontaktierdraht (4) durch Erzeugen einer Legierung enthaltend Blei als Hauptelement und mindestens ein weiteres Element in einem Flüssigabschreckverfahren und Formen der Legierung zu einem Draht mit einem Durchmesser von 30 bis 50 µm in einem Drahtziehverfahren hergestellt wird.1. Superconductor device with a contact wire, characterized in that the contact wire ( 4 ) by producing an alloy containing lead as the main element and at least one further element in a liquid quenching process and forming the alloy into a wire with a diameter of 30 to 50 microns in a wire drawing process will be produced. 2. Supraleitervorrichtung nach Anspruch 1, dadurch gekennzeichnet, daß das weitere Element, das zu dem Kontaktierdraht hinzugegeben wird, mindestens ein Element aus der Reihe Cu, Ga, Ge, Se, Ag, In, Sn, Sb, Te, Au, Tl, Bi, Pd und Pt ist.2. Superconductor device according to claim 1, characterized in that the further element which to the Contact wire is added, at least one element from the series Cu, Ga, Ge, Se, Ag, In, Sn, Sb, Is Te, Au, Tl, Bi, Pd and Pt. 3. Supraleitervorrichtung nach Anspruch 2, dadurch gekennzeichnet, daß ein Oberflächenmetall (5) an der Seite eines Supraleiterchips (2), die mit dem Kontaktierdraht (4) verbunden ist, eine Legierung des gleichen Materials wie das des Kontaktierdrahtes ist.3. Superconductor device according to claim 2, characterized in that a surface metal ( 5 ) on the side of a superconductor chip ( 2 ) which is connected to the contact wire ( 4 ) is an alloy of the same material as that of the contact wire. 4. Supraleitervorrichtung nach Anspruch 2, dadurch gekennzeichnet, daß ein Oberflächenmetall (5) an der Seite eines Supraleiterchips, die mit dem Kontaktierdraht (4) verbunden ist, Pb-In ist.4. Superconductor device according to claim 2, characterized in that a surface metal ( 5 ) on the side of a superconductor chip, which is connected to the contact wire ( 4 ), is Pb-In. 5. Supraleitervorrichtung nach Anspruch 2, dadurch gekennzeichnet, daß ein Supraleiterchip (2) eine laminare Struktur hat, die eine Si-Schicht und eine Nb-Schicht und ein Oberflächenmetall (5) an der Seite des Supraleiterchips, die mit dem Kontaktierdraht (4) verbunden ist, aus Au umfaßt.5. Superconductor device according to claim 2, characterized in that a superconductor chip ( 2 ) has a laminar structure which has a Si layer and an Nb layer and a surface metal ( 5 ) on the side of the superconductor chip which is connected to the contact wire ( 4 ). is connected from Au. 6. Supraleitervorrichtung nach Anspruch 1, dadurch gekennzeichnet, daß die Bleilegierung Pb-In-Au ist.6. Superconductor device according to claim 1, characterized in that the lead alloy is Pb-In-Au. 7. Supraleitervorrichtung nach Anspruch 2, dadurch gekennzeichnet, daß die Bleilegierung Pb-In-Ag ist.7. Superconductor device according to claim 2, characterized in that the lead alloy is Pb-In-Ag. 8. Supraleitervorrichtung nach Anspruch 2, dadurch gekennzeichnet, daß die Bleilegierung Pb-In-Cu ist.8. Superconductor device according to claim 2, characterized in that the lead alloy is Pb-In-Cu. 9. Supraleitervorrichtung nach Anspruch 2, dadurch gekennzeichnet, daß die Bleilegierung Pb-Bi ist.9. Superconductor device according to claim 2, characterized in that the lead alloy is Pb-Bi. 10. Supraleitervorrichtung nach Anspruch 2, dadurch gekennzeichnet, daß die Bleilegierung Pb-Sb ist.10. Superconductor device according to claim 2, characterized in that the lead alloy is Pb-Sb.
DE3844879A 1987-12-28 1988-12-28 Superconductor device with a contact wire Expired - Fee Related DE3844879C3 (en)

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JP62335113A JPH0221628A (en) 1987-12-28 1987-12-28 Bonding pb alloy wire for superconducting element and superconducting device
DE3844114A DE3844114C3 (en) 1987-12-28 1988-12-28 Use of a contact wire made of a lead alloy in a superconductor device

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