DE3850139D1 - Halbleiterlaser mit variabler Oszillationswellenlänge. - Google Patents
Halbleiterlaser mit variabler Oszillationswellenlänge.Info
- Publication number
- DE3850139D1 DE3850139D1 DE3850139T DE3850139T DE3850139D1 DE 3850139 D1 DE3850139 D1 DE 3850139D1 DE 3850139 T DE3850139 T DE 3850139T DE 3850139 T DE3850139 T DE 3850139T DE 3850139 D1 DE3850139 D1 DE 3850139D1
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor laser
- oscillation wavelength
- variable oscillation
- variable
- wavelength
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4031—Edge-emitting structures
- H01S5/4043—Edge-emitting structures with vertically stacked active layers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
- H01S5/06209—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in single-section lasers
- H01S5/0622—Controlling the frequency of the radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/3418—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers using transitions from higher quantum levels
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4087—Array arrangements, e.g. constituted by discrete laser diodes or laser bar emitting more than one wavelength
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62044939A JPH0728094B2 (ja) | 1987-02-27 | 1987-02-27 | 半導体レ−ザ素子 |
JP62044936A JPH0728093B2 (ja) | 1987-02-27 | 1987-02-27 | 半導体レ−ザ素子 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE3850139D1 true DE3850139D1 (de) | 1994-07-21 |
DE3850139T2 DE3850139T2 (de) | 1994-10-06 |
Family
ID=26384901
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE3850139T Expired - Lifetime DE3850139T2 (de) | 1987-02-27 | 1988-02-24 | Halbleiterlaser mit variabler Oszillationswellenlänge. |
Country Status (3)
Country | Link |
---|---|
US (1) | US4982408A (de) |
EP (1) | EP0280281B1 (de) |
DE (1) | DE3850139T2 (de) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5033053A (en) | 1989-03-30 | 1991-07-16 | Canon Kabushiki Kaisha | Semiconductor laser device having plurality of layers for emitting lights of different wavelengths and method of driving the same |
US5138624A (en) * | 1989-11-16 | 1992-08-11 | The Boeing Company | Multiwavelength LED and laser diode optical source |
US5124996A (en) * | 1990-03-02 | 1992-06-23 | Canon Kabushiki Kaisha | Semiconductor laser element having a plurality of layers emitting lights of different wavelengths, and its driving method |
US5170289A (en) * | 1991-02-01 | 1992-12-08 | Grumman Aerospace Corporation | Optical correlator console |
DE69222822T2 (de) * | 1991-09-06 | 1998-03-05 | Trw Inc | Optoelektronische Schaltvorrichtung mit Quantentopf-Struktur und stimulierter Emission |
US5200969A (en) * | 1991-10-18 | 1993-04-06 | Xerox Corporation | Switchable multiple wavelength semiconductor laser |
US5214664A (en) * | 1991-10-18 | 1993-05-25 | Xerox Corporation | Multiple wavelength semiconductor laser |
US5365535A (en) * | 1992-01-13 | 1994-11-15 | Canon Kabushiki Kaisha | Semiconductor laser and beam splitting devices, and optical information recording/reproducing, optical communication, and optomagnetic recording/reproducing apparatuses using semiconductor laser and beam splitting devices |
FR2687011B1 (fr) * | 1992-01-31 | 1994-07-08 | France Telecom | Amplificateur optique a semiconducteur a faible temps de commutation. |
US5384797A (en) * | 1992-09-21 | 1995-01-24 | Sdl, Inc. | Monolithic multi-wavelength laser diode array |
US5436193A (en) * | 1993-11-02 | 1995-07-25 | Xerox Corporation | Method of fabricating a stacked active region laser array |
US5386428A (en) * | 1993-11-02 | 1995-01-31 | Xerox Corporation | Stacked active region laser array for multicolor emissions |
JPH07235732A (ja) * | 1993-12-28 | 1995-09-05 | Nec Corp | 半導体レーザ |
US5390209A (en) * | 1994-01-05 | 1995-02-14 | At&T Corp. | Article comprising a semiconductor laser that is non-degenerate with regard to polarization |
US9564151B1 (en) | 2015-08-28 | 2017-02-07 | Seagate Technology Llc | Data writer coil heater |
US10290994B2 (en) * | 2015-10-30 | 2019-05-14 | Canon Kabushiki Kaisha | Laser device, information acquisition device, and imaging system |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57190392A (en) * | 1981-05-20 | 1982-11-22 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor light-emitting device |
JPH07112089B2 (ja) * | 1982-12-07 | 1995-11-29 | 富士通株式会社 | 半導体発光装置 |
JPH07112090B2 (ja) * | 1982-12-10 | 1995-11-29 | 富士通株式会社 | 半導体発光装置 |
US4602370A (en) * | 1983-05-12 | 1986-07-22 | At&T Bell Laboratories | Large optical cavity laser having a plurality of active layers |
JPS61168983A (ja) * | 1985-01-22 | 1986-07-30 | Nec Corp | 高出力半導体レ−ザ |
DE3751548T2 (de) * | 1986-07-25 | 1996-04-11 | Mitsubishi Electric Corp | Halbleiterlaser. |
-
1988
- 1988-02-24 DE DE3850139T patent/DE3850139T2/de not_active Expired - Lifetime
- 1988-02-24 EP EP88102756A patent/EP0280281B1/de not_active Expired - Lifetime
-
1990
- 1990-04-16 US US07/511,921 patent/US4982408A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0280281B1 (de) | 1994-06-15 |
US4982408A (en) | 1991-01-01 |
EP0280281A2 (de) | 1988-08-31 |
EP0280281A3 (en) | 1989-03-08 |
DE3850139T2 (de) | 1994-10-06 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |