DE3855119D1 - Photovoltaisches Bauelement mit einer Halbleiterschicht aus nichteinkristallinem Stoff, welches zumindest Zn,Se und H in einer Menge von 1 bis 4 Atom % enthält - Google Patents
Photovoltaisches Bauelement mit einer Halbleiterschicht aus nichteinkristallinem Stoff, welches zumindest Zn,Se und H in einer Menge von 1 bis 4 Atom % enthältInfo
- Publication number
- DE3855119D1 DE3855119D1 DE3855119T DE3855119T DE3855119D1 DE 3855119 D1 DE3855119 D1 DE 3855119D1 DE 3855119 T DE3855119 T DE 3855119T DE 3855119 T DE3855119 T DE 3855119T DE 3855119 D1 DE3855119 D1 DE 3855119D1
- Authority
- DE
- Germany
- Prior art keywords
- atoms
- semiconductor layer
- atom
- amount
- layer made
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title abstract 4
- 239000002178 crystalline material Substances 0.000 title 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 abstract 2
- 125000003748 selenium group Chemical group *[Se]* 0.000 abstract 2
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical group [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 abstract 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical group [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 abstract 1
- 125000004429 atom Chemical group 0.000 abstract 1
- 239000013078 crystal Substances 0.000 abstract 1
- 239000002019 doping agent Substances 0.000 abstract 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
- H01L31/073—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising only AIIBVI compound semiconductors, e.g. CdS/CdTe solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02551—Group 12/16 materials
- H01L21/02554—Oxides
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02551—Group 12/16 materials
- H01L21/0256—Selenides
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
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- H01L21/02521—Materials
- H01L21/02551—Group 12/16 materials
- H01L21/02562—Tellurides
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02576—N-type
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02579—P-type
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
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- H—ELECTRICITY
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0296—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe
- H01L31/02963—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe characterised by the doping material
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0296—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe
- H01L31/02966—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe including ternary compounds, e.g. HgCdTe
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
- H01L31/1832—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe comprising ternary compounds, e.g. Hg Cd Te
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/543—Solar cells from Group II-VI materials
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62179927A JPS6424471A (en) | 1987-07-21 | 1987-07-21 | Photosensor |
JP62205917A JPS6448469A (en) | 1987-08-19 | 1987-08-19 | Photovoltaic cell |
JP62205916A JPS6448468A (en) | 1987-08-19 | 1987-08-19 | Photovoltaic cell |
Publications (2)
Publication Number | Publication Date |
---|---|
DE3855119D1 true DE3855119D1 (de) | 1996-04-25 |
DE3855119T2 DE3855119T2 (de) | 1996-10-17 |
Family
ID=27324779
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE3855119T Expired - Fee Related DE3855119T2 (de) | 1987-07-21 | 1988-07-21 | Photovoltaisches Bauelement mit einer Halbleiterschicht aus nichteinkristallinem Stoff, welches zumindest Zn,Se und H in einer Menge von 1 bis 4 Atom % enthält |
Country Status (7)
Country | Link |
---|---|
US (1) | US4959106A (de) |
EP (1) | EP0300799B1 (de) |
AT (1) | ATE135849T1 (de) |
AU (1) | AU622617B2 (de) |
CA (1) | CA1303194C (de) |
DE (1) | DE3855119T2 (de) |
ES (1) | ES2086297T3 (de) |
Families Citing this family (43)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6424468A (en) * | 1987-07-21 | 1989-01-26 | Canon Kk | Functional deposited film |
EP0301903A3 (de) * | 1987-07-31 | 1990-07-11 | Canon Kabushiki Kaisha | Funktionelle niedergeschlagene ZnSe1-xTeX: H-Schicht |
JPS6436086A (en) * | 1987-07-31 | 1989-02-07 | Canon Kk | Functional deposition film |
US4888062A (en) * | 1987-08-31 | 1989-12-19 | Canon Kabushiki Kaisha | Pin junction photovoltaic element having I-type semiconductor layer comprising non-single crystal material containing at least Zn, Se and H in an amount of 1 to 4 atomic % |
EP0317343B1 (de) * | 1987-11-20 | 1995-07-05 | Canon Kabushiki Kaisha | Photovoltaisches PIN-Bauelement mit einer P- oder N-Halbleiterschicht aus nicht einkristallinem Stoff, welches Zn, Se, Te, H in einer Menge von 1 bis 4 Atom % und ein Dotierelement enthält und eine I-Halbleiterschicht aus nicht einkristallinem Si(H,F) |
US4926229A (en) * | 1987-11-20 | 1990-05-15 | Canon Kabushiki Kaisha | Pin junction photovoltaic element with P or N-type semiconductor layer comprising non-single crystal material containing Zn, Se, H in an amount of 1 to 4 atomic % and a dopant and I-type semiconductor layer comprising non-single crystal Si(H,F) material |
JP2846651B2 (ja) * | 1989-03-31 | 1999-01-13 | 三洋電機株式会社 | 光起電力装置 |
US5573601A (en) * | 1989-10-17 | 1996-11-12 | Canon Kabushiki Kaisha | Pin amorphous silicon photovoltaic element with counter-doped intermediate layer |
US5051786A (en) * | 1989-10-24 | 1991-09-24 | Mcnc | Passivated polycrystalline semiconductors quantum well/superlattice structures fabricated thereof |
JP2693032B2 (ja) * | 1990-10-16 | 1997-12-17 | キヤノン株式会社 | 半導体層の形成方法及びこれを用いる太陽電池の製造方法 |
US5284525A (en) * | 1990-12-13 | 1994-02-08 | Canon Kabushiki Kaisha | Solar cell |
JP2918345B2 (ja) * | 1991-02-20 | 1999-07-12 | キヤノン株式会社 | 光起電力素子 |
CN1111840A (zh) * | 1991-05-15 | 1995-11-15 | 明尼苏达州采矿制造公司 | 蓝-绿激光二极管的制造方法 |
US5274269A (en) * | 1991-05-15 | 1993-12-28 | Minnesota Mining And Manufacturing Company | Ohmic contact for p-type group II-IV compound semiconductors |
US5404027A (en) * | 1991-05-15 | 1995-04-04 | Minnesota Mining & Manufacturing Compay | Buried ridge II-VI laser diode |
US5291507A (en) * | 1991-05-15 | 1994-03-01 | Minnesota Mining And Manufacturing Company | Blue-green laser diode |
JP2974485B2 (ja) * | 1992-02-05 | 1999-11-10 | キヤノン株式会社 | 光起電力素子の製造法 |
JP2771414B2 (ja) * | 1992-12-28 | 1998-07-02 | キヤノン株式会社 | 太陽電池の製造方法 |
US5557146A (en) * | 1993-07-14 | 1996-09-17 | University Of South Florida | Ohmic contact using binder paste with semiconductor material dispersed therein |
AU695669B2 (en) * | 1994-05-19 | 1998-08-20 | Canon Kabushiki Kaisha | Photovoltaic element, electrode structure thereof, and process for producing the same |
US5628829A (en) * | 1994-06-03 | 1997-05-13 | Materials Research Corporation | Method and apparatus for low temperature deposition of CVD and PECVD films |
US5975912A (en) * | 1994-06-03 | 1999-11-02 | Materials Research Corporation | Low temperature plasma-enhanced formation of integrated circuits |
WO1995034092A1 (en) * | 1994-06-03 | 1995-12-14 | Materials Research Corporation | A method of nitridization of titanium thin films |
US5665640A (en) * | 1994-06-03 | 1997-09-09 | Sony Corporation | Method for producing titanium-containing thin films by low temperature plasma-enhanced chemical vapor deposition using a rotating susceptor reactor |
EP1388597B1 (de) * | 2001-04-04 | 2013-02-13 | Nippon Mining & Metals Co., Ltd. | VERFAHREN ZUR HERSTELLUNG VON n-type ZnTe-VERBINDUNGSHALBLEITER-EINKRISTALL AUF EINEM ZNTE-SUBSTRAT UND HALBLEITERVORRICHTUNG |
KR100786855B1 (ko) * | 2001-08-24 | 2007-12-20 | 삼성에스디아이 주식회사 | 강유전체를 이용한 태양전지 |
EP2201605A4 (de) * | 2007-09-25 | 2017-12-06 | First Solar, Inc | Pv-elemente mit grenzflächenschicht |
WO2009060808A1 (en) * | 2007-11-09 | 2009-05-14 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device and method for manufacturing the same |
US20090139558A1 (en) * | 2007-11-29 | 2009-06-04 | Shunpei Yamazaki | Photoelectric conversion device and manufacturing method thereof |
EP2075850A3 (de) * | 2007-12-28 | 2011-08-24 | Semiconductor Energy Laboratory Co, Ltd. | Photoelektrische Umwandlungsvorrichtung und Verfahren zu ihrer Herstellung |
EP2105972A3 (de) | 2008-03-28 | 2015-06-10 | Semiconductor Energy Laboratory Co, Ltd. | Photoelektrische Umwandlungsvorrichtung und Verfahren zu deren Herstellung |
US7842534B2 (en) | 2008-04-02 | 2010-11-30 | Sunlight Photonics Inc. | Method for forming a compound semi-conductor thin-film |
WO2010077622A1 (en) * | 2008-12-08 | 2010-07-08 | Arizona Board Of Regents, Acting For And On Behalf Of Arizona State University | Electrical devices including dendritic metal electrodes |
JP5470633B2 (ja) | 2008-12-11 | 2014-04-16 | 国立大学法人東北大学 | 光電変換素子及び太陽電池 |
JP2013058562A (ja) | 2011-09-07 | 2013-03-28 | Semiconductor Energy Lab Co Ltd | 光電変換装置 |
US20140166107A1 (en) * | 2012-12-13 | 2014-06-19 | Intermolecular, Inc. | Back-Contact Electron Reflectors Enhancing Thin Film Solar Cell Efficiency |
WO2014121187A2 (en) | 2013-02-01 | 2014-08-07 | First Solar, Inc. | Photovoltaic device including a p-n junction and method of manufacturing |
US11876140B2 (en) * | 2013-05-02 | 2024-01-16 | First Solar, Inc. | Photovoltaic devices and method of making |
CN104183663B (zh) | 2013-05-21 | 2017-04-12 | 第一太阳能马来西亚有限公司 | 光伏器件及其制备方法 |
US10062800B2 (en) | 2013-06-07 | 2018-08-28 | First Solar, Inc. | Photovoltaic devices and method of making |
KR20150142094A (ko) * | 2014-06-10 | 2015-12-22 | 에스케이이노베이션 주식회사 | 원자층 증착법으로 형성된 버퍼층을 포함하는 태양전지 및 이의 제조방법 |
US10529883B2 (en) | 2014-11-03 | 2020-01-07 | First Solar, Inc. | Photovoltaic devices and method of manufacturing |
WO2019180854A1 (ja) * | 2018-03-20 | 2019-09-26 | 株式会社 東芝 | 多接合型太陽電池モジュール及び太陽光発電システム |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4226898A (en) | 1978-03-16 | 1980-10-07 | Energy Conversion Devices, Inc. | Amorphous semiconductors equivalent to crystalline semiconductors produced by a glow discharge process |
JPS5752176A (en) * | 1980-09-16 | 1982-03-27 | Semiconductor Energy Lab Co Ltd | Semiconductor device |
US4596645A (en) * | 1984-10-23 | 1986-06-24 | California Institute Of Technology | Reactively-sputtered zinc semiconductor films of high conductivity for heterojunction devices |
JPS61189649A (ja) | 1985-02-18 | 1986-08-23 | Canon Inc | 堆積膜形成法 |
JPH0691112B2 (ja) | 1985-02-18 | 1994-11-14 | キヤノン株式会社 | 堆積膜形成法 |
IN167516B (de) * | 1986-05-06 | 1990-11-10 | Standard Oil Co Ohio | |
JPS6424468A (en) * | 1987-07-21 | 1989-01-26 | Canon Kk | Functional deposited film |
JPS6436086A (en) * | 1987-07-31 | 1989-02-07 | Canon Kk | Functional deposition film |
EP0301903A3 (de) | 1987-07-31 | 1990-07-11 | Canon Kabushiki Kaisha | Funktionelle niedergeschlagene ZnSe1-xTeX: H-Schicht |
-
1988
- 1988-07-20 CA CA000572580A patent/CA1303194C/en not_active Expired - Lifetime
- 1988-07-20 AU AU19264/88A patent/AU622617B2/en not_active Ceased
- 1988-07-21 DE DE3855119T patent/DE3855119T2/de not_active Expired - Fee Related
- 1988-07-21 ES ES88306720T patent/ES2086297T3/es not_active Expired - Lifetime
- 1988-07-21 AT AT88306720T patent/ATE135849T1/de not_active IP Right Cessation
- 1988-07-21 EP EP88306720A patent/EP0300799B1/de not_active Expired - Lifetime
-
1989
- 1989-08-28 US US07/399,396 patent/US4959106A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0300799A3 (en) | 1990-07-25 |
EP0300799B1 (de) | 1996-03-20 |
DE3855119T2 (de) | 1996-10-17 |
US4959106A (en) | 1990-09-25 |
EP0300799A2 (de) | 1989-01-25 |
ATE135849T1 (de) | 1996-04-15 |
AU1926488A (en) | 1989-01-27 |
ES2086297T3 (es) | 1996-07-01 |
CA1303194C (en) | 1992-06-09 |
AU622617B2 (en) | 1992-04-16 |
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