DE3883957T2 - Verfahren und Vorrichtung zur Kontrolle der Oberflächenladung in der Ionen-Implantation. - Google Patents

Verfahren und Vorrichtung zur Kontrolle der Oberflächenladung in der Ionen-Implantation.

Info

Publication number
DE3883957T2
DE3883957T2 DE88311897T DE3883957T DE3883957T2 DE 3883957 T2 DE3883957 T2 DE 3883957T2 DE 88311897 T DE88311897 T DE 88311897T DE 3883957 T DE3883957 T DE 3883957T DE 3883957 T2 DE3883957 T2 DE 3883957T2
Authority
DE
Germany
Prior art keywords
controlling
ion implantation
surface charge
charge
implantation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE88311897T
Other languages
English (en)
Other versions
DE3883957D1 (de
Inventor
Marvin Farley
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Eaton Corp
Original Assignee
Eaton Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Eaton Corp filed Critical Eaton Corp
Publication of DE3883957D1 publication Critical patent/DE3883957D1/de
Application granted granted Critical
Publication of DE3883957T2 publication Critical patent/DE3883957T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/026—Means for avoiding or neutralising unwanted electrical charges on tube components
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
    • G21K1/14—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using charge exchange devices, e.g. for neutralising or changing the sign of the electrical charges of beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31701—Ion implantation
DE88311897T 1988-01-11 1988-12-16 Verfahren und Vorrichtung zur Kontrolle der Oberflächenladung in der Ionen-Implantation. Expired - Fee Related DE3883957T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/142,365 US4804837A (en) 1988-01-11 1988-01-11 Ion implantation surface charge control method and apparatus

Publications (2)

Publication Number Publication Date
DE3883957D1 DE3883957D1 (de) 1993-10-14
DE3883957T2 true DE3883957T2 (de) 1994-04-28

Family

ID=22499570

Family Applications (1)

Application Number Title Priority Date Filing Date
DE88311897T Expired - Fee Related DE3883957T2 (de) 1988-01-11 1988-12-16 Verfahren und Vorrichtung zur Kontrolle der Oberflächenladung in der Ionen-Implantation.

Country Status (8)

Country Link
US (1) US4804837A (de)
EP (1) EP0324247B1 (de)
JP (1) JP2724488B2 (de)
KR (1) KR940006307B1 (de)
CN (1) CN1017949B (de)
CA (1) CA1280223C (de)
DE (1) DE3883957T2 (de)
ES (1) ES2043857T3 (de)

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JP2704438B2 (ja) * 1989-09-04 1998-01-26 東京エレクトロン株式会社 イオン注入装置
US5136171A (en) * 1990-03-02 1992-08-04 Varian Associates, Inc. Charge neutralization apparatus for ion implantation system
DE69121374T2 (de) * 1990-12-17 1997-02-27 Applied Materials Inc Gerät und Verfahren zur Ionenimplantierung
US5134299A (en) * 1991-03-13 1992-07-28 Eaton Corporation Ion beam implantation method and apparatus for particulate control
JPH05326452A (ja) * 1991-06-10 1993-12-10 Kawasaki Steel Corp プラズマ処理装置及び方法
US5164599A (en) * 1991-07-19 1992-11-17 Eaton Corporation Ion beam neutralization means generating diffuse secondary emission electron shower
JP3054302B2 (ja) * 1992-12-02 2000-06-19 アプライド マテリアルズ インコーポレイテッド イオン注入中の半導体ウェハにおける帯電を低減するプラズマ放出システム
JPH06216060A (ja) * 1993-01-12 1994-08-05 Tokyo Electron Ltd 真空処理方法
US6278936B1 (en) 1993-05-18 2001-08-21 Global Research Systems, Inc. System and method for an advance notification system for monitoring and reporting proximity of a vehicle
US6700507B2 (en) 1993-05-18 2004-03-02 Arrivalstar, Inc. Advance notification system and method utilizing vehicle signaling
US6618668B1 (en) * 2000-04-26 2003-09-09 Arrivalstar, Inc. System and method for obtaining vehicle schedule information in an advance notification system
US20030098802A1 (en) * 1999-03-01 2003-05-29 Jones Martin Kelly Base station apparatus and method for monitoring travel of a mobile vehicle
US6748320B2 (en) 1993-05-18 2004-06-08 Arrivalstar, Inc. Advance notification systems and methods utilizing a computer network
US6748318B1 (en) * 1993-05-18 2004-06-08 Arrivalstar, Inc. Advanced notification systems and methods utilizing a computer network
ATA4694A (de) * 1994-01-13 1994-11-15 Ims Ionen Mikrofab Syst Projektionssystem fuer geladene teilchen
EP0676792A3 (de) * 1994-04-05 1996-01-10 Atomika Instr Gmbh Ionentechnische Vorrichtung.
US5531420A (en) * 1994-07-01 1996-07-02 Eaton Corporation Ion beam electron neutralizer
US5757018A (en) * 1995-12-11 1998-05-26 Varian Associates, Inc. Zero deflection magnetically-suppressed Faraday for ion implanters
US5691537A (en) * 1996-01-22 1997-11-25 Chen; John Method and apparatus for ion beam transport
US5703375A (en) * 1996-08-02 1997-12-30 Eaton Corporation Method and apparatus for ion beam neutralization
US5729028A (en) * 1997-01-27 1998-03-17 Rose; Peter H. Ion accelerator for use in ion implanter
JP3406488B2 (ja) * 1997-09-05 2003-05-12 東京エレクトロン株式会社 真空処理装置
US5909031A (en) * 1997-09-08 1999-06-01 Eaton Corporation Ion implanter electron shower having enhanced secondary electron emission
US5903009A (en) * 1997-09-08 1999-05-11 Eaton Corporation Biased and serrated extension tube for ion implanter electron shower
US5856674A (en) * 1997-09-16 1999-01-05 Eaton Corporation Filament for ion implanter plasma shower
TW432578B (en) 1997-09-18 2001-05-01 Tokyo Electron Ltd A vacuum processing apparatus
US5959305A (en) * 1998-06-19 1999-09-28 Eaton Corporation Method and apparatus for monitoring charge neutralization operation
US6204508B1 (en) * 1998-08-07 2001-03-20 Axcelis Technologies, Inc. Toroidal filament for plasma generation
FR2793951B1 (fr) * 1999-05-21 2001-08-17 Centre Nat Etd Spatiales Procede et installation de traitement d'un substrat tel qu'un circuit integre par un faisceau focalise de particules electriquement neutres
US6975998B1 (en) * 2000-03-01 2005-12-13 Arrivalstar, Inc. Package delivery notification system and method
US6723998B2 (en) 2000-09-15 2004-04-20 Varian Semiconductor Equipment Associates, Inc. Faraday system for ion implanters
US6762423B2 (en) * 2002-11-05 2004-07-13 Varian Semiconductor Equipment Associates, Inc. Methods and apparatus for ion beam neutralization in magnets
US7119716B2 (en) 2003-05-28 2006-10-10 Legalview Assets, Limited Response systems and methods for notification systems for modifying future notifications
US7561069B2 (en) 2003-11-12 2009-07-14 Legalview Assets, Limited Notification systems and methods enabling a response to change particulars of delivery or pickup
US7038223B2 (en) * 2004-04-05 2006-05-02 Burle Technologies, Inc. Controlled charge neutralization of ion-implanted articles
US7078710B2 (en) * 2004-06-15 2006-07-18 International Business Machines Corporation Ion beam system
CN101248505B (zh) * 2005-07-08 2010-12-15 耐克斯金思美控股公司 受控粒子束制造用的设备和方法
WO2008140585A1 (en) 2006-11-22 2008-11-20 Nexgen Semi Holding, Inc. Apparatus and method for conformal mask manufacturing
KR100836765B1 (ko) * 2007-01-08 2008-06-10 삼성전자주식회사 이온빔을 사용하는 반도체 장비
US10566169B1 (en) 2008-06-30 2020-02-18 Nexgen Semi Holding, Inc. Method and device for spatial charged particle bunching
US10991545B2 (en) 2008-06-30 2021-04-27 Nexgen Semi Holding, Inc. Method and device for spatial charged particle bunching
JP2013089409A (ja) * 2011-10-17 2013-05-13 Sen Corp イオン注入装置及びイオン注入方法
RU2696268C2 (ru) * 2014-11-19 2019-08-01 Таэ Текнолоджиз, Инк. Фотонный нейтрализатор для инжекторов пучков нейтральных частиц
US10159991B2 (en) 2015-02-14 2018-12-25 Waxman Consumer Products Group Inc. Showerhead with filter cartridge assembly
CN107293347B (zh) * 2017-07-10 2023-09-29 中国原子能科学研究院 一种束流在线电荷极性转换装置
US11830705B2 (en) * 2020-08-20 2023-11-28 PIE Scientific LLC Plasma flood gun for charged particle apparatus

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1349302A (fr) * 1962-11-28 1964-01-17 Centre Nat Rech Scient Microanalyseur par émission ionique secondaire
US3415985A (en) * 1962-11-28 1968-12-10 Centre Nat Rech Scient Ionic microanalyzer wherein secondary ions are emitted from a sample surface upon bombardment by neutral atoms
US3507709A (en) * 1967-09-15 1970-04-21 Hughes Aircraft Co Method of irradiating dielectriccoated semiconductor bodies with low energy electrons
US4135097A (en) * 1977-05-05 1979-01-16 International Business Machines Corporation Ion implantation apparatus for controlling the surface potential of a target surface
US4361762A (en) * 1980-07-30 1982-11-30 Rca Corporation Apparatus and method for neutralizing the beam in an ion implanter
US4463255A (en) * 1980-09-24 1984-07-31 Varian Associates, Inc. Apparatus for enhanced neutralization of positively charged ion beam
FR2537777A1 (fr) * 1982-12-10 1984-06-15 Commissariat Energie Atomique Procede et dispositif d'implantation de particules dans un solide
US4595837A (en) * 1983-09-16 1986-06-17 Rca Corporation Method for preventing arcing in a device during ion-implantation
JPS61153938A (ja) * 1984-12-27 1986-07-12 Ulvac Corp イオン注入装置に於ける電荷中和装置

Also Published As

Publication number Publication date
ES2043857T3 (es) 1994-01-01
DE3883957D1 (de) 1993-10-14
EP0324247A2 (de) 1989-07-19
JP2724488B2 (ja) 1998-03-09
JPH025351A (ja) 1990-01-10
CN1035914A (zh) 1989-09-27
KR890012360A (ko) 1989-08-26
CA1280223C (en) 1991-02-12
EP0324247B1 (de) 1993-09-08
KR940006307B1 (ko) 1994-07-14
EP0324247A3 (en) 1990-04-04
CN1017949B (zh) 1992-08-19
US4804837A (en) 1989-02-14

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee