DE3884682T2 - Verfahren zur Züchtung eines Halbleiterkristalles aus III-V-Gruppen-Verbindung auf einem Si-Substrat. - Google Patents

Verfahren zur Züchtung eines Halbleiterkristalles aus III-V-Gruppen-Verbindung auf einem Si-Substrat.

Info

Publication number
DE3884682T2
DE3884682T2 DE88305944T DE3884682T DE3884682T2 DE 3884682 T2 DE3884682 T2 DE 3884682T2 DE 88305944 T DE88305944 T DE 88305944T DE 3884682 T DE3884682 T DE 3884682T DE 3884682 T2 DE3884682 T2 DE 3884682T2
Authority
DE
Germany
Prior art keywords
growing
iii
substrate
compound semiconductor
semiconductor crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE88305944T
Other languages
English (en)
Other versions
DE3884682D1 (de
Inventor
Takashi Matsumoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP16569487A external-priority patent/JPS649895A/ja
Priority claimed from JP16569587A external-priority patent/JPS649896A/ja
Priority claimed from JP17510587A external-priority patent/JP2576134B2/ja
Priority claimed from JP17637487A external-priority patent/JP2576135B2/ja
Application filed by NEC Corp filed Critical NEC Corp
Publication of DE3884682D1 publication Critical patent/DE3884682D1/de
Application granted granted Critical
Publication of DE3884682T2 publication Critical patent/DE3884682T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/933—Germanium or silicon or Ge-Si on III-V
DE88305944T 1987-07-01 1988-06-30 Verfahren zur Züchtung eines Halbleiterkristalles aus III-V-Gruppen-Verbindung auf einem Si-Substrat. Expired - Fee Related DE3884682T2 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP16569487A JPS649895A (en) 1987-07-01 1987-07-01 Method for growing iii-v compound semiconductor crystal on si substrate
JP16569587A JPS649896A (en) 1987-07-01 1987-07-01 Method for growing iii-v compound semiconductor crystal on si substrate
JP17510587A JP2576134B2 (ja) 1987-07-13 1987-07-13 Ｓｉ基板上のＩｎＰ結晶の成長方法
JP17637487A JP2576135B2 (ja) 1987-07-14 1987-07-14 Ｓｉ基板上のＧａＰ結晶の成長方法

Publications (2)

Publication Number Publication Date
DE3884682D1 DE3884682D1 (de) 1993-11-11
DE3884682T2 true DE3884682T2 (de) 1994-05-05

Family

ID=27474022

Family Applications (1)

Application Number Title Priority Date Filing Date
DE88305944T Expired - Fee Related DE3884682T2 (de) 1987-07-01 1988-06-30 Verfahren zur Züchtung eines Halbleiterkristalles aus III-V-Gruppen-Verbindung auf einem Si-Substrat.

Country Status (3)

Country Link
US (1) US4840921A (de)
EP (1) EP0297867B1 (de)
DE (1) DE3884682T2 (de)

Families Citing this family (49)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01207920A (ja) * 1988-02-16 1989-08-21 Oki Electric Ind Co Ltd ＩｎＰ半導体薄膜の製造方法
US5130269A (en) * 1988-04-27 1992-07-14 Fujitsu Limited Hetero-epitaxially grown compound semiconductor substrate and a method of growing the same
JPH0795546B2 (ja) * 1989-03-31 1995-10-11 工業技術院長 シリコン表面の処理方法
JPH03218621A (ja) * 1989-11-30 1991-09-26 Toshiba Corp 薄膜の選択成長方法及び薄膜の選択成長装置
JPH042699A (ja) * 1990-04-18 1992-01-07 Mitsubishi Electric Corp 結晶成長方法
US5458084A (en) * 1992-04-16 1995-10-17 Moxtek, Inc. X-ray wave diffraction optics constructed by atomic layer epitaxy
WO1999019546A1 (en) * 1997-10-10 1999-04-22 Cornell Research Foundation, Inc. Methods for growing defect-free heteroepitaxial layers
FI110311B (fi) * 1999-07-20 2002-12-31 Asm Microchemistry Oy Menetelmä ja laitteisto aineiden poistamiseksi kaasuista
FI117978B (fi) * 2000-04-14 2007-05-15 Asm Int Menetelmä ja laitteisto ohutkalvon kasvattamiseksi alustalle
US7060132B2 (en) * 2000-04-14 2006-06-13 Asm International N.V. Method and apparatus of growing a thin film
US6620723B1 (en) 2000-06-27 2003-09-16 Applied Materials, Inc. Formation of boride barrier layers using chemisorption techniques
US7732327B2 (en) 2000-06-28 2010-06-08 Applied Materials, Inc. Vapor deposition of tungsten materials
US7405158B2 (en) 2000-06-28 2008-07-29 Applied Materials, Inc. Methods for depositing tungsten layers employing atomic layer deposition techniques
US6551929B1 (en) 2000-06-28 2003-04-22 Applied Materials, Inc. Bifurcated deposition process for depositing refractory metal layers employing atomic layer deposition and chemical vapor deposition techniques
US7101795B1 (en) 2000-06-28 2006-09-05 Applied Materials, Inc. Method and apparatus for depositing refractory metal layers employing sequential deposition techniques to form a nucleation layer
US7964505B2 (en) 2005-01-19 2011-06-21 Applied Materials, Inc. Atomic layer deposition of tungsten materials
US6592942B1 (en) * 2000-07-07 2003-07-15 Asm International N.V. Method for vapour deposition of a film onto a substrate
US6825447B2 (en) * 2000-12-29 2004-11-30 Applied Materials, Inc. Apparatus and method for uniform substrate heating and contaminate collection
US6998579B2 (en) 2000-12-29 2006-02-14 Applied Materials, Inc. Chamber for uniform substrate heating
US20020083897A1 (en) * 2000-12-29 2002-07-04 Applied Materials, Inc. Full glass substrate deposition in plasma enhanced chemical vapor deposition
US6765178B2 (en) 2000-12-29 2004-07-20 Applied Materials, Inc. Chamber for uniform substrate heating
US20020127336A1 (en) * 2001-01-16 2002-09-12 Applied Materials, Inc. Method for growing thin films by catalytic enhancement
US6811814B2 (en) 2001-01-16 2004-11-02 Applied Materials, Inc. Method for growing thin films by catalytic enhancement
US6951804B2 (en) * 2001-02-02 2005-10-04 Applied Materials, Inc. Formation of a tantalum-nitride layer
US6660126B2 (en) 2001-03-02 2003-12-09 Applied Materials, Inc. Lid assembly for a processing system to facilitate sequential deposition techniques
US6878206B2 (en) 2001-07-16 2005-04-12 Applied Materials, Inc. Lid assembly for a processing system to facilitate sequential deposition techniques
US6734020B2 (en) 2001-03-07 2004-05-11 Applied Materials, Inc. Valve control system for atomic layer deposition chamber
US6849545B2 (en) 2001-06-20 2005-02-01 Applied Materials, Inc. System and method to form a composite film stack utilizing sequential deposition techniques
US7211144B2 (en) * 2001-07-13 2007-05-01 Applied Materials, Inc. Pulsed nucleation deposition of tungsten layers
US7085616B2 (en) 2001-07-27 2006-08-01 Applied Materials, Inc. Atomic layer deposition apparatus
US7049226B2 (en) 2001-09-26 2006-05-23 Applied Materials, Inc. Integration of ALD tantalum nitride for copper metallization
US6936906B2 (en) 2001-09-26 2005-08-30 Applied Materials, Inc. Integration of barrier layer and seed layer
US6916398B2 (en) 2001-10-26 2005-07-12 Applied Materials, Inc. Gas delivery apparatus and method for atomic layer deposition
US6729824B2 (en) 2001-12-14 2004-05-04 Applied Materials, Inc. Dual robot processing system
US6911391B2 (en) 2002-01-26 2005-06-28 Applied Materials, Inc. Integration of titanium and titanium nitride layers
US6998014B2 (en) * 2002-01-26 2006-02-14 Applied Materials, Inc. Apparatus and method for plasma assisted deposition
US6827978B2 (en) * 2002-02-11 2004-12-07 Applied Materials, Inc. Deposition of tungsten films
US6833161B2 (en) * 2002-02-26 2004-12-21 Applied Materials, Inc. Cyclical deposition of tungsten nitride for metal oxide gate electrode
US7439191B2 (en) 2002-04-05 2008-10-21 Applied Materials, Inc. Deposition of silicon layers for active matrix liquid crystal display (AMLCD) applications
US6720027B2 (en) 2002-04-08 2004-04-13 Applied Materials, Inc. Cyclical deposition of a variable content titanium silicon nitride layer
US6846516B2 (en) 2002-04-08 2005-01-25 Applied Materials, Inc. Multiple precursor cyclical deposition system
US6875271B2 (en) 2002-04-09 2005-04-05 Applied Materials, Inc. Simultaneous cyclical deposition in different processing regions
US20030194825A1 (en) * 2002-04-10 2003-10-16 Kam Law Deposition of gate metallization for active matrix liquid crystal display (AMLCD) applications
US6869838B2 (en) * 2002-04-09 2005-03-22 Applied Materials, Inc. Deposition of passivation layers for active matrix liquid crystal display (AMLCD) applications
US7279432B2 (en) 2002-04-16 2007-10-09 Applied Materials, Inc. System and method for forming an integrated barrier layer
US6821563B2 (en) 2002-10-02 2004-11-23 Applied Materials, Inc. Gas distribution system for cyclical layer deposition
US7262133B2 (en) 2003-01-07 2007-08-28 Applied Materials, Inc. Enhancement of copper line reliability using thin ALD tan film to cap the copper line
KR20060079144A (ko) 2003-06-18 2006-07-05 어플라이드 머티어리얼스, 인코포레이티드 배리어 물질의 원자층 증착
US6818517B1 (en) 2003-08-29 2004-11-16 Asm International N.V. Methods of depositing two or more layers on a substrate in situ

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3975218A (en) * 1972-04-28 1976-08-17 Semimetals, Inc. Process for production of III-V compound epitaxial crystals
US3963538A (en) * 1974-12-17 1976-06-15 International Business Machines Corporation Two stage heteroepitaxial deposition process for GaP/Si
JPS6061000A (ja) * 1983-09-13 1985-04-08 Koujiyundo Kagaku Kenkyusho:Kk 砒化ガリウム層形成方法
US4504329A (en) * 1983-10-06 1985-03-12 The United States Of America As Represented By The Secretary Of The Air Force Process for the epitaxial deposition of III-V compounds utilizing a binary alloy as the metallic source
US4657603A (en) * 1984-10-10 1987-04-14 Siemens Aktiengesellschaft Method for the manufacture of gallium arsenide thin film solar cells
JPS61260622A (ja) * 1985-05-15 1986-11-18 Res Dev Corp Of Japan ＧａＡｓ単結晶薄膜の成長法
JPH0691020B2 (ja) * 1986-02-14 1994-11-14 日本電信電話株式会社 気相成長方法および装置

Also Published As

Publication number Publication date
EP0297867A3 (en) 1990-10-17
DE3884682D1 (de) 1993-11-11
EP0297867A2 (de) 1989-01-04
US4840921A (en) 1989-06-20
EP0297867B1 (de) 1993-10-06

Similar Documents

Publication Publication Date Title
DE3884682T2 (de) Verfahren zur Züchtung eines Halbleiterkristalles aus III-V-Gruppen-Verbindung auf einem Si-Substrat.
DE68918150D1 (de) Verfahren zum Aufwachsen einer Galliumarsenid-Schicht auf einem Silizium-Substrat.
DE3879143D1 (de) Verfahren zur zuechtung einer beta-siliziumcarbid-einkristall-schicht auf einem siliziumsubstrat.
DE3583183D1 (de) Verfahren zur herstellung eines halbleitersubstrates.
DE59309438D1 (de) Schnelles verfahren zur erzeugung eines chalkopyrit-halbleiters auf einem substrat
DE69332511T2 (de) Verfahren zur Herstellung eines Halbleitersubstrats
DE69333282D1 (de) Verfahren zur Herstellung eines Halbleitersubstrats
DE3875992T2 (de) Verfahren zur herstellung einer epitaxieschicht eines iii-v-verbindungshalbleiters.
DE69023956T2 (de) Verfahren zur Herstellung eines III-V-Verbindungshalbleiterbauelementes.
DE3851191D1 (de) Verfahren zur Beschichtung eines Substrates.
DE58906873D1 (de) Verfahren zur Herstellung eines flexiblen Trägersubstrates.
DE69232749T2 (de) Verfahren zur Herstellung von defektfreiem Silizium auf einem isolierenden Substrat
DE3855249D1 (de) Verfahren zur Herstellung eines Siliciumcarbidsubstrats
DE3875515D1 (de) Substrat und verfahren zur herstellung eines substrates.
DE68928402D1 (de) Verfahren zur Entfernung einer Oxidschicht auf einem Substrat
DE69001411D1 (de) Verfahren zur herstellung eines substrats fuer halbleiteranordnungen.
DE59203585D1 (de) Verfahren zur Herstellung einer Solarzelle aus einer Substratscheibe.
DE69312196T2 (de) Verfahren zur Vorbereitung der Montage eines Chips auf einem Substrat
DE68903008T2 (de) Verfahren zur ziehung eines halbleiter-kristalls.
DE69228631T2 (de) Verfahren zur Kristallzüchtung eines III-V Verbindungshalbleiters
DE68912638D1 (de) Verfahren zur Herstellung einer Kristallschicht auf einem Substrat.
DE68912686D1 (de) Verfahren zur Herstellung eines Einkristalls aus einer Halbleiter-Verbindung.
DE3886863D1 (de) Verfahren zur Herstellung einer supraleitenden Oxydschicht auf einem Substrat.
DE3785638T2 (de) Verfahren zur Züchtung von Kristallen aus Halbleiterverbindungen.
DE3851828D1 (de) Verfahren zum epitaktischen wachstum eines substrats für hochbrillante led.

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee