DE3888603T2 - Halbleiterbauelement mit Floating-Gate. - Google Patents

Halbleiterbauelement mit Floating-Gate.

Info

Publication number
DE3888603T2
DE3888603T2 DE3888603T DE3888603T DE3888603T2 DE 3888603 T2 DE3888603 T2 DE 3888603T2 DE 3888603 T DE3888603 T DE 3888603T DE 3888603 T DE3888603 T DE 3888603T DE 3888603 T2 DE3888603 T2 DE 3888603T2
Authority
DE
Germany
Prior art keywords
floating gate
semiconductor component
semiconductor
component
floating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE3888603T
Other languages
English (en)
Other versions
DE3888603D1 (de
Inventor
Yohichi C O Patent Div Ohshima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Publication of DE3888603D1 publication Critical patent/DE3888603D1/de
Application granted granted Critical
Publication of DE3888603T2 publication Critical patent/DE3888603T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/51—Insulating materials associated therewith
    • H01L29/511—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7881—Programmable transistors with only two possible levels of programmation
    • H01L29/7884—Programmable transistors with only two possible levels of programmation charging by hot carrier injection
    • H01L29/7885—Hot carrier injection from the channel
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
    • H10B41/42—Simultaneous manufacture of periphery and memory cells
    • H10B41/43—Simultaneous manufacture of periphery and memory cells comprising only one type of peripheral transistor
    • H10B41/46—Simultaneous manufacture of periphery and memory cells comprising only one type of peripheral transistor with an inter-gate dielectric layer also being used as part of the peripheral transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
    • H10B41/42—Simultaneous manufacture of periphery and memory cells
    • H10B41/43—Simultaneous manufacture of periphery and memory cells comprising only one type of peripheral transistor
    • H10B41/48—Simultaneous manufacture of periphery and memory cells comprising only one type of peripheral transistor with a tunnel dielectric layer also being used as part of the peripheral transistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28158—Making the insulator
    • H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
    • H01L21/28211—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation in a gaseous ambient using an oxygen or a water vapour, e.g. RTO, possibly through a layer
DE3888603T 1987-07-31 1988-07-29 Halbleiterbauelement mit Floating-Gate. Expired - Fee Related DE3888603T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62191548A JP2664685B2 (ja) 1987-07-31 1987-07-31 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
DE3888603D1 DE3888603D1 (de) 1994-04-28
DE3888603T2 true DE3888603T2 (de) 1994-08-04

Family

ID=16276506

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3888603T Expired - Fee Related DE3888603T2 (de) 1987-07-31 1988-07-29 Halbleiterbauelement mit Floating-Gate.

Country Status (5)

Country Link
US (2) US5063431A (de)
EP (1) EP0305741B1 (de)
JP (1) JP2664685B2 (de)
KR (1) KR910007377B1 (de)
DE (1) DE3888603T2 (de)

Families Citing this family (57)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2755781B2 (ja) * 1990-04-23 1998-05-25 株式会社東芝 半導体記憶装置およびその製造方法
JP2685966B2 (ja) * 1990-06-22 1997-12-08 株式会社東芝 不揮発性半導体記憶装置
KR940009352B1 (ko) * 1990-07-09 1994-10-07 가부시끼가이샤 도시바 반도체 소자
JP2635809B2 (ja) * 1990-09-12 1997-07-30 株式会社東芝 半導体装置及びその製造方法
KR930007527B1 (ko) * 1990-09-22 1993-08-12 삼성전자 주식회사 스토리지 셀 어레이와 주변회로를 갖는 불휘발성 반도체 메모리 장치의 제조방법 및 그 구조
JP2679389B2 (ja) * 1990-10-12 1997-11-19 日本電気株式会社 不揮発性半導体記憶セルのデータ消去方法
KR930009131B1 (ko) * 1991-04-24 1993-09-23 삼성전자 주식회사 초고집적 반도체 메모리장치의 제조방법
EP0511628A3 (en) * 1991-04-30 1993-09-22 Texas Instruments Incorporated Insulator for integrated circuits formed by high-pressure oxidation
JP2652108B2 (ja) * 1991-09-05 1997-09-10 三菱電機株式会社 電界効果トランジスタおよびその製造方法
JPH0575133A (ja) * 1991-09-11 1993-03-26 Rohm Co Ltd 不揮発性記憶装置
US5192872A (en) * 1991-09-13 1993-03-09 Micron Technology, Inc. Cell structure for erasable programmable read-only memories
JP3548984B2 (ja) * 1991-11-14 2004-08-04 富士通株式会社 半導体装置の製造方法
JPH05283710A (ja) * 1991-12-06 1993-10-29 Intel Corp 高電圧ｍｏｓトランジスタ及びその製造方法
US5726087A (en) * 1992-04-30 1998-03-10 Motorola, Inc. Method of formation of semiconductor gate dielectric
US5393683A (en) * 1992-05-26 1995-02-28 Micron Technology, Inc. Method of making semiconductor devices having two-layer gate structure
KR960012303B1 (ko) * 1992-08-18 1996-09-18 삼성전자 주식회사 불휘발성 반도체메모리장치 및 그 제조방법
DE69313816T2 (de) * 1993-02-11 1998-03-26 St Microelectronics Srl EEPROM-Zelle und peripherer MOS-Transistor
DE69405438T2 (de) * 1993-03-24 1998-04-02 At & T Corp Verfahren zur Bildung dielektrischer Oxynitridschichten bei der Herstellung integrierter Schaltungen
US5561319A (en) * 1993-05-14 1996-10-01 Lsi Logic Corporation Integrated circuit structure including CMOS devices protected by patterned nitride passivation and method for the fabrication thereof
US5371028A (en) * 1993-08-02 1994-12-06 Chartered Semiconductor Manufacturing Pte Ltd. Method for making single transistor non-volatile electrically alterable semiconductor memory device
DE4419762A1 (de) * 1993-10-12 1995-04-20 Hewlett Packard Co Bauelement mit aufgewachsenem und abgeschiedenem Zwei-Film-Gate-Oxid und Verfahren zu dessen Herstellung
US5397720A (en) * 1994-01-07 1995-03-14 The Regents Of The University Of Texas System Method of making MOS transistor having improved oxynitride dielectric
US5432749A (en) * 1994-04-26 1995-07-11 National Semiconductor Corporation Non-volatile memory cell having hole confinement layer for reducing band-to-band tunneling
US5478765A (en) * 1994-05-04 1995-12-26 Regents Of The University Of Texas System Method of making an ultra thin dielectric for electronic devices
US6133620A (en) * 1995-05-26 2000-10-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and process for fabricating the same
US5712208A (en) * 1994-06-09 1998-01-27 Motorola, Inc. Methods of formation of semiconductor composite gate dielectric having multiple incorporated atomic dopants
JP3600326B2 (ja) * 1994-09-29 2004-12-15 旺宏電子股▲ふん▼有限公司 不揮発性半導体メモリ装置およびその製造方法
US5780891A (en) 1994-12-05 1998-07-14 Micron Technology, Inc. Nonvolatile floating gate memory with improved interploy dielectric
EP1111673A1 (de) * 1995-05-10 2001-06-27 STMicroelectronics S.r.l. Herstellungsverfahren eines integrierten MOS-Schaltkreises mit Bestandteilen mit unterschiedlichen Dielektrika
JP2871530B2 (ja) * 1995-05-10 1999-03-17 日本電気株式会社 半導体装置の製造方法
US5925907A (en) * 1995-09-29 1999-07-20 Nippon Steel Corporaition Semiconductor device including transistor with composite gate structure and transistor with single gate structure
US6787844B2 (en) * 1995-09-29 2004-09-07 Nippon Steel Corporation Semiconductor device including transistor with composite gate structure and transistor with single gate structure, and method for manufacturing the same
JPH10256539A (ja) * 1997-03-10 1998-09-25 Fujitsu Ltd 半導体装置及びその製造方法
US6258671B1 (en) * 1997-05-13 2001-07-10 Micron Technology, Inc. Methods of providing spacers over conductive line sidewalls, methods of forming sidewall spacers over etched line sidewalls, and methods of forming conductive lines
US6020606A (en) * 1998-03-20 2000-02-01 United Silicon Incorporated Structure of a memory cell
TW449919B (en) * 1998-12-18 2001-08-11 Koninkl Philips Electronics Nv A method of manufacturing a semiconductor device
JP4212178B2 (ja) * 1999-03-12 2009-01-21 株式会社東芝 半導体集積回路の製造方法
US6677640B1 (en) * 2000-03-01 2004-01-13 Micron Technology, Inc. Memory cell with tight coupling
TW497270B (en) * 2000-06-09 2002-08-01 Sanyo Electric Co Method for making semiconductors
JP3686318B2 (ja) * 2000-08-31 2005-08-24 松下電器産業株式会社 半導体記憶装置の製造方法
JP4096507B2 (ja) * 2000-09-29 2008-06-04 富士通株式会社 半導体装置の製造方法
DE10101270A1 (de) * 2001-01-12 2002-07-25 Infineon Technologies Ag Verfahren zur Herstellung von eingebetteten nichtflüchtigen Halbleiterspeicherzellen
DE10221884A1 (de) * 2002-05-16 2003-11-27 Infineon Technologies Ag Verfahren zum Herstellen einer Schicht-Anordnung, Schicht-Anordnung und Speicher-Anordnung
US20030232507A1 (en) * 2002-06-12 2003-12-18 Macronix International Co., Ltd. Method for fabricating a semiconductor device having an ONO film
US7067439B2 (en) 2002-06-14 2006-06-27 Applied Materials, Inc. ALD metal oxide deposition process using direct oxidation
US6893920B2 (en) 2002-09-12 2005-05-17 Promos Technologies, Inc. Method for forming a protective buffer layer for high temperature oxide processing
US7279003B2 (en) * 2003-04-24 2007-10-09 Medtronic Vascular, Inc. Stent graft tapered spring
US8119210B2 (en) 2004-05-21 2012-02-21 Applied Materials, Inc. Formation of a silicon oxynitride layer on a high-k dielectric material
US7678710B2 (en) 2006-03-09 2010-03-16 Applied Materials, Inc. Method and apparatus for fabricating a high dielectric constant transistor gate using a low energy plasma system
US7837838B2 (en) 2006-03-09 2010-11-23 Applied Materials, Inc. Method of fabricating a high dielectric constant transistor gate using a low energy plasma apparatus
US7645710B2 (en) 2006-03-09 2010-01-12 Applied Materials, Inc. Method and apparatus for fabricating a high dielectric constant transistor gate using a low energy plasma system
JP4936790B2 (ja) * 2006-05-22 2012-05-23 株式会社東芝 半導体装置
KR20080002030A (ko) * 2006-06-30 2008-01-04 삼성전자주식회사 비휘발성 메모리 장치의 게이트 구조물 형성 방법
TWI435376B (zh) 2006-09-26 2014-04-21 Applied Materials Inc 用於缺陷鈍化之高ｋ閘極堆疊的氟電漿處理
KR100835430B1 (ko) * 2007-05-21 2008-06-04 주식회사 동부하이텍 반도체 소자의 듀얼 게이트 전극 형성 방법
US7745344B2 (en) * 2007-10-29 2010-06-29 Freescale Semiconductor, Inc. Method for integrating NVM circuitry with logic circuitry
US8436411B2 (en) * 2009-01-06 2013-05-07 United Microelectronics Corp. Non-volatile memory

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3992701A (en) * 1975-04-10 1976-11-16 International Business Machines Corporation Non-volatile memory cell and array using substrate current
JPS577162A (en) * 1980-06-17 1982-01-14 Toshiba Corp Nonvolatile semiconductor memory and manufacture therefor
CA1188419A (en) * 1981-12-14 1985-06-04 Yung-Chau Yen Nonvolatile multilayer gate semiconductor memory device
US4477825A (en) * 1981-12-28 1984-10-16 National Semiconductor Corporation Electrically programmable and erasable memory cell
JPS5955071A (ja) * 1982-09-24 1984-03-29 Hitachi Micro Comput Eng Ltd 不揮発性半導体装置
US4601939A (en) * 1983-09-20 1986-07-22 International Business Machines Corporation Composite insulator structure
US4698787A (en) * 1984-11-21 1987-10-06 Exel Microelectronics, Inc. Single transistor electrically programmable memory device and method
JPS61136274A (ja) * 1984-12-07 1986-06-24 Toshiba Corp 半導体装置
JPS61212068A (ja) * 1985-03-16 1986-09-20 Sony Corp 半導体装置
US4656729A (en) * 1985-03-25 1987-04-14 International Business Machines Corp. Dual electron injection structure and process with self-limiting oxidation barrier
US4683554A (en) * 1985-09-13 1987-07-28 Ncr Corporation Direct write nonvolatile memory cells

Also Published As

Publication number Publication date
KR910007377B1 (ko) 1991-09-25
JP2664685B2 (ja) 1997-10-15
EP0305741B1 (de) 1994-03-23
EP0305741A2 (de) 1989-03-08
US5063431A (en) 1991-11-05
KR890003036A (ko) 1989-04-12
EP0305741A3 (en) 1990-05-16
DE3888603D1 (de) 1994-04-28
US5034798A (en) 1991-07-23
JPS6436077A (en) 1989-02-07

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8320 Willingness to grant licences declared (paragraph 23)
8339 Ceased/non-payment of the annual fee