DE3888880T2 - Träger für einen Halbleiterapparat. - Google Patents

Träger für einen Halbleiterapparat.

Info

Publication number
DE3888880T2
DE3888880T2 DE3888880T DE3888880T DE3888880T2 DE 3888880 T2 DE3888880 T2 DE 3888880T2 DE 3888880 T DE3888880 T DE 3888880T DE 3888880 T DE3888880 T DE 3888880T DE 3888880 T2 DE3888880 T2 DE 3888880T2
Authority
DE
Germany
Prior art keywords
carrier
semiconductor device
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE3888880T
Other languages
English (en)
Other versions
DE3888880D1 (de
Inventor
Akira C O Itami Works Sasame
Hitoyuki C O Itami Wo Sakanoue
Hisao C O Itami Works Tekeuchi
Masaya C O Itami Works Miyake
Akira C O Itami Works Yamakawa
Yasuhisa C O Itami Work Yushio
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Application granted granted Critical
Publication of DE3888880D1 publication Critical patent/DE3888880D1/de
Publication of DE3888880T2 publication Critical patent/DE3888880T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/02Containers; Seals
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/12Mountings, e.g. non-detachable insulating substrates
    • H01L23/14Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
    • H01L23/15Ceramic or glass substrates
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/02Containers; Seals
    • H01L23/06Containers; Seals characterised by the material of the container or its electrical properties
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/34Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3735Laminates or multilayers, e.g. direct bond copper ceramic substrates
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/12All metal or with adjacent metals
    • Y10T428/12014All metal or with adjacent metals having metal particles
    • Y10T428/12028Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, etc.]
    • Y10T428/12049Nonmetal component
    • Y10T428/12056Entirely inorganic
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/12All metal or with adjacent metals
    • Y10T428/12493Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12528Semiconductor component
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/12All metal or with adjacent metals
    • Y10T428/12493Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12535Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.] with additional, spatially distinct nonmetal component
    • Y10T428/12576Boride, carbide or nitride component
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/12All metal or with adjacent metals
    • Y10T428/12493Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12771Transition metal-base component
    • Y10T428/12861Group VIII or IB metal-base component
    • Y10T428/12882Cu-base component alternative to Ag-, Au-, or Ni-base component
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/12All metal or with adjacent metals
    • Y10T428/12493Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12771Transition metal-base component
    • Y10T428/12861Group VIII or IB metal-base component
    • Y10T428/12903Cu-base component
    • Y10T428/1291Next to Co-, Cu-, or Ni-base component

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Buffer Packaging (AREA)
  • Packaging Frangible Articles (AREA)
  • Laminated Bodies (AREA)
DE3888880T 1987-07-03 1988-06-29 Träger für einen Halbleiterapparat. Expired - Fee Related DE3888880T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16519187 1987-07-03

Publications (2)

Publication Number Publication Date
DE3888880D1 DE3888880D1 (de) 1994-05-11
DE3888880T2 true DE3888880T2 (de) 1994-07-28

Family

ID=15807568

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3888880T Expired - Fee Related DE3888880T2 (de) 1987-07-03 1988-06-29 Träger für einen Halbleiterapparat.

Country Status (5)

Country Link
US (1) US4886709A (de)
EP (1) EP0297569B1 (de)
KR (1) KR920003594B1 (de)
CA (1) CA1284536C (de)
DE (1) DE3888880T2 (de)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102017119346A1 (de) * 2017-08-24 2019-02-28 Osram Opto Semiconductors Gmbh Bauteil mit Pufferschicht und Verfahren zur Herstellung eines Bauteils
DE102017119344A1 (de) * 2017-08-24 2019-02-28 Osram Opto Semiconductors Gmbh Träger und Bauteil mit Pufferschicht sowie Verfahren zur Herstellung eines Bauteils

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5529852A (en) * 1987-01-26 1996-06-25 Sumitomo Electric Industries, Ltd. Aluminum nitride sintered body having a metallized coating layer on its surface
US5070393A (en) * 1988-12-23 1991-12-03 Kabushiki Kaisha Toshiba Aluminum nitride substrate for formation of thin-film conductor layer and semiconductor device using the substrate
US5292552A (en) * 1989-12-20 1994-03-08 Sumitomo Electric Industries, Ltd. Method for forming metallized layer on an aluminum nitride sintered body
EP0434264B1 (de) * 1989-12-22 1994-10-12 Westinghouse Electric Corporation Gehäuse für Leistungshalbleiterbauelemente
US5109268A (en) * 1989-12-29 1992-04-28 Sgs-Thomson Microelectronics, Inc. Rf transistor package and mounting pad
EP0482812B1 (de) * 1990-10-26 1998-01-07 Sumitomo Electric Industries, Ltd. Verfahren zum Herstellen von wärmestrahlender Substraten zum Montieren von Halbleitern und gemäss diesem Verfahren hergestellte Halbleiterpackung
US5395679A (en) * 1993-03-29 1995-03-07 Delco Electronics Corp. Ultra-thick thick films for thermal management and current carrying capabilities in hybrid circuits
JPH0864724A (ja) * 1994-07-25 1996-03-08 General Electric Co <Ge> 順応性金属のチップ‐基板結合層を有する電子装置
US6783867B2 (en) * 1996-02-05 2004-08-31 Sumitomo Electric Industries, Ltd. Member for semiconductor device using an aluminum nitride substrate material, and method of manufacturing the same
JP3845925B2 (ja) * 1996-02-05 2006-11-15 住友電気工業株式会社 窒化アルミニウム基材を用いた半導体装置用部材及びその製造方法
JPH1065294A (ja) * 1996-08-14 1998-03-06 Toshiba Corp セラミックス配線基板およびその製造方法
US6004624A (en) 1997-07-02 1999-12-21 International Business Machines Corporation Method for the controlling of certain second phases in aluminum nitride
US5988488A (en) * 1997-09-02 1999-11-23 Mcdonnell Douglas Corporation Process of bonding copper and tungsten
US6089444A (en) * 1997-09-02 2000-07-18 Mcdonnell Douglas Corporation Process of bonding copper and tungsten
JP4013386B2 (ja) * 1998-03-02 2007-11-28 住友電気工業株式会社 半導体製造用保持体およびその製造方法
WO2002067324A1 (fr) 2001-02-22 2002-08-29 Ngk Insulators, Ltd. Element pour circuit electronique, procede de fabrication d'un tel element et portion electronique
US7095053B2 (en) * 2003-05-05 2006-08-22 Lamina Ceramics, Inc. Light emitting diodes packaged for high temperature operation
US7633093B2 (en) * 2003-05-05 2009-12-15 Lighting Science Group Corporation Method of making optical light engines with elevated LEDs and resulting product
US7777235B2 (en) * 2003-05-05 2010-08-17 Lighting Science Group Corporation Light emitting diodes with improved light collimation
US7300182B2 (en) * 2003-05-05 2007-11-27 Lamina Lighting, Inc. LED light sources for image projection systems
DE102004054996B4 (de) * 2003-12-06 2013-07-18 Schaeffler Technologies AG & Co. KG Elektronisches Gerät
US7964883B2 (en) * 2004-02-26 2011-06-21 Lighting Science Group Corporation Light emitting diode package assembly that emulates the light pattern produced by an incandescent filament bulb
US20050225222A1 (en) * 2004-04-09 2005-10-13 Joseph Mazzochette Light emitting diode arrays with improved light extraction
US7252408B2 (en) * 2004-07-19 2007-08-07 Lamina Ceramics, Inc. LED array package with internal feedback and control
WO2007005003A1 (en) * 2005-06-30 2007-01-11 Lamina Ceramics, Inc. Light emitting diode package assembly that emulates the light pattern produced by an incandescent filament bulb
JP2007305962A (ja) * 2006-05-12 2007-11-22 Honda Motor Co Ltd パワー半導体モジュール
DE102009021236A1 (de) * 2009-05-14 2010-12-02 Osram Gesellschaft mit beschränkter Haftung Leuchtdiodenmodul und Beleuchtungseinheit mit Leuchtdiodenmodul
KR101242218B1 (ko) * 2011-01-07 2013-03-11 에이텍 테크놀로지 코포레이션 발광 소자 및 그의 형성 방법
JP5873108B2 (ja) 2011-12-22 2016-03-01 京セラ株式会社 配線基板および電子装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57181356A (en) * 1981-04-30 1982-11-08 Hitachi Ltd Sintered aluminum nitride body with high heat conductivity
JPH0810710B2 (ja) * 1984-02-24 1996-01-31 株式会社東芝 良熱伝導性基板の製造方法
US4656101A (en) * 1984-11-07 1987-04-07 Semiconductor Energy Laboratory Co., Ltd. Electronic device with a protective film
DE3523061A1 (de) * 1985-06-27 1987-01-02 Siemens Ag Halbleiter-chip-anordnung
JPS62197379A (ja) * 1986-02-20 1987-09-01 株式会社東芝 窒化アルミニウム基板
EP0297512B1 (de) * 1987-06-30 1993-09-08 Sumitomo Electric Industries, Ltd. Trägerelement für Halbleiterapparat

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102017119346A1 (de) * 2017-08-24 2019-02-28 Osram Opto Semiconductors Gmbh Bauteil mit Pufferschicht und Verfahren zur Herstellung eines Bauteils
DE102017119344A1 (de) * 2017-08-24 2019-02-28 Osram Opto Semiconductors Gmbh Träger und Bauteil mit Pufferschicht sowie Verfahren zur Herstellung eines Bauteils
US11183621B2 (en) 2017-08-24 2021-11-23 Osram Oled Gmbh Component having a buffer layer and method for producing a component
US11450794B2 (en) 2017-08-24 2022-09-20 Osram Oled Gmbh Carrier and component with a buffer layer, and method for producing a component

Also Published As

Publication number Publication date
KR920003594B1 (ko) 1992-05-04
EP0297569A3 (en) 1990-07-11
EP0297569B1 (de) 1994-04-06
US4886709A (en) 1989-12-12
DE3888880D1 (de) 1994-05-11
EP0297569A2 (de) 1989-01-04
CA1284536C (en) 1991-05-28
KR890003021A (ko) 1989-04-12

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8328 Change in the person/name/address of the agent

Representative=s name: GROSSE, BOCKHORNI, SCHUMACHER, 81476 MUENCHEN

8339 Ceased/non-payment of the annual fee