DE3940083A1 - Anisotropic dry etching of aluminium (alloy) circuits - using plasma of chlorine, nitrogen and argon - Google Patents

Anisotropic dry etching of aluminium (alloy) circuits - using plasma of chlorine, nitrogen and argon

Info

Publication number
DE3940083A1
DE3940083A1 DE19893940083 DE3940083A DE3940083A1 DE 3940083 A1 DE3940083 A1 DE 3940083A1 DE 19893940083 DE19893940083 DE 19893940083 DE 3940083 A DE3940083 A DE 3940083A DE 3940083 A1 DE3940083 A1 DE 3940083A1
Authority
DE
Germany
Prior art keywords
aluminum
argon
chlorine
nitrogen
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE19893940083
Other languages
German (de)
Other versions
DE3940083C2 (en
Inventor
Virinder Dr Ing Grewal
Hans Raske
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Priority to DE19893940083 priority Critical patent/DE3940083A1/en
Publication of DE3940083A1 publication Critical patent/DE3940083A1/en
Application granted granted Critical
Publication of DE3940083C2 publication Critical patent/DE3940083C2/de
Granted legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
    • H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas

Abstract

Anisotropic dry etching of Al (alloy)-contg. circuit levels (4) in semiconductor ICs, using a photolacquer layer (6) as etch mask, is carried out in a plasma of chlorine, nitrogen and argon. ADVANTAGE - The process gives perpendicular or positively inclined etched flanks allowing good sidewall passivation and high corrosion resistance of the aluminium circuit lines, has good integration capability in prodn. lines and avoids difficult-to-handle and corrosive gases such as BCl3 and SiCl4.

Description

Die Erfindung betrifft ein Verfahren zum anisotropen Trocken­ ätzen von Aluminium bzw. Aluminiumlegierungen enthaltenden Leiterbahnebenen in integrierten Halbleiterschaltungen, bei denen als Ätzmaske eine Fotolackschicht verwendet wird.The invention relates to a method for anisotropic drying etching of aluminum or containing aluminum alloys Conductor levels in integrated semiconductor circuits, at which is used as an etching mask a photoresist layer.

Für Trockenätzprozesse für Aluminium-Leiterbahnen werden bislang zur Initialisierung des Ätzprozesses Gase wie Bortrichlorid, Siliziumtetrachlorid oder Tetrachlorkohlenstoff verwendet. Durch Ionenbeschuß mit diesen Gasen wird die auf der Aluminiumober­ fläche vorhandene Oxidschicht entfernt, so daß dann mit Chlor­ gas das Aluminium geätzt werden kann. Daneben wird erreicht, daß Feuchtigkeit aus dem Ätzreaktor entfernt wird.So far, have been used for dry etching processes for aluminum conductor tracks to initialize the etching process gases such as boron trichloride, Silicon tetrachloride or carbon tetrachloride used. By Ion bombardment with these gases is applied to the aluminum surface Surface oxide layer removed, so that then with chlorine gas the aluminum can be etched. In addition, it is achieved that Moisture is removed from the etching reactor.

Zum Stand der Technik wird auf einen Bericht von H.B. Bell aus dem J. Electrochem. Soc., Mai 1988, S. 1184-1191 hingewiesen, aus dem bekannt ist, zum Ätzen von Aluminium/Silizium Mischungen aus Bortrichlorid oder -bromid und Chlor zu verwenden.A report by H.B. Bell out J. Electrochem. Soc., May 1988, pp. 1184-1191, from which is known for etching aluminum / silicon mixtures from boron trichloride or bromide and chlorine.

Des weiteren ist aus einem Bericht von Jer-shen Maa und Bernard Halon aus dem J. Vac. Sci. Technol. B4(4), Juli/Aug. 1986, S. 822-828 zu entnehmen, daß beim anisotropen Trockenätzen von Leiterbahnen aus Aluminium bzw. Aluminiumlegierungen es schwie­ rig ist, die Ätzresiduen an den Leiterbahnstrukturen zu ent­ fernen. Diese Residuen bilden sich infolge des unterschiedlichen Schichtdickenabtrages an den Stufen. Störend wirken sich diese Ätzresiduen dann aus, wenn bei fortschreitender Miniaturisierung an Halbleiterbauelementen Strukturen im Bereich von 1µm und darunter erzeugt werden. Durch Überätzen werden hier die Ätz­ residuen gemindert, dabei wird aber eine Reduzierung der Aluminiumleiterbahnbreite in Kauf genommen. Furthermore, from a report by Jer-shen Maa and Bernard Halon from J. Vac. Sci. Technol. B4 (4), July / Aug. 1986, Pp. 822-828 show that anisotropic dry etching of Conductor tracks made of aluminum or aluminum alloys were difficult rig is to remove the etching residues on the conductor track structures distant. These residuals are formed as a result of the different Removal of layer thickness on the steps. These are disruptive Etching residues out when miniaturization progresses structures in the range of 1 µm and generated below. By over-etching, the etching becomes residuals is reduced, but this reduces the Aluminum track width accepted.  

Aufgabe der Erfindung ist es, ein Trockenätzverfahren für Leiterbahnebenen aus Aluminium bzw. Aluminiumlegierungen an­ zugeben, welches folgende Bedingungen erfüllt:The object of the invention is a dry etching process for Interconnect levels made of aluminum or aluminum alloys admit that meets the following conditions:

  • 1) Die Leitbahnstrukturen sollen senkrechte bzw. positiv ge­ neigte Flanken aufweisen.1) The interconnect structures should be vertical or positive have inclined flanks.
  • 2) An den Flanken soll eine gute Seitenwandpassivierung er­ folgen.2) Good sidewall passivation on the flanks consequences.
  • 3) Die Aluminiumleitbahnen sollen eine hohe Korrosionsbestän­ digkeit besitzen.3) The aluminum interconnects should have a high corrosion resistance possessed.
  • 4) Der Prozeß soll in den Fertigungsablauf gut integrierbar sein und4) The process should be easy to integrate into the manufacturing process be and
  • 5) schwer handzuhabende und korrosive Gase wie Bortrichlorid, Siliziumtetrachlorid sollen vermieden werden.5) difficult to handle and corrosive gases such as boron trichloride, Silicon tetrachloride should be avoided.

Die erfindungsgemäße Aufgabe wird bei einem Verfahren der eingangs genannten Art dadurch gelöst, daß der Ätzprozeß in einem aus Chlor, Stickstoff und Argon bestehendem Plasma durch­ geführt wird. Anstelle von Bortrichlorid bzw. Siliziumtetra­ chlorid oder Tetrachlorkohlenstoff wird Stickstoff und Argon verwendet und deren Ionen zur Initialisierung des Ätz­ prozesses eingesetzt. Nach dem Aluminiumätzen wird anstelle von Chlor Sauerstoff in den Reaktor eingeleitet, wobei die Foto­ lackmaske "in sito" entfernt werden kann.The object of the invention is in a method of type mentioned in that the etching process in a plasma consisting of chlorine, nitrogen and argon to be led. Instead of boron trichloride or silicon tetra chloride or carbon tetrachloride becomes nitrogen and argon used and their ions to initialize the etch process used. After aluminum etching, instead of Chlorine introduced oxygen into the reactor, the photo paint mask "in sito" can be removed.

Gemäß einem Ausführungsbeispiel nach der Lehre der Erfindung werden die bei Aluminium-Metallisierungen üblichen Diffusions­ barriere-Schichten aus Titan und/oder Titannitrid oder aus amorphem Silizium mitgeätzt. Die Verwendung von Titan bzw. Titannitridschichten als Diffusionsbarriere bei Aluminium­ leitbahnen ist aus der europäischen Patentanmeldung 0 304 728 bekannt.According to an embodiment according to the teaching of the invention become the usual diffusions in aluminum metallizations barrier layers made of titanium and / or titanium nitride or etched with amorphous silicon. The use of titanium or Titanium nitride layers as a diffusion barrier for aluminum leitbahnen is from European patent application 0 304 728 known.

Das erfindungsgemäße Verfahren erlaubt außerdem eine Mehr­ lagen-Metallisierung in einem Schritt mit Festzeiten zu ätzen, was für den Fertigungsablauf von großer Bedeutung ist.The inventive method also allows a more layer etching with fixed times in one step, which is very important for the manufacturing process.

Im Ätzreaktor (Applied Materials MEX 8131, 8331 und ähnliches oder Single wafer machines, P5000, Tegal, LAM) werden folgende Prozeßparameter eingestellt:
Reaktordruck : 2,5 bis 7 Pa
RF-Energie (variable) : 1000 bis 2500 Watt
DC-Bias : -200 bis -350 Volt
Chlordurchfluß : 30 bis 60 sccm
Stickstoffdurchfluß : 50 bis 300 sccm
Argondurchfluß : 50 bis 300 sccm.The following process parameters are set in the etching reactor (Applied Materials MEX 8131, 8331 and similar or single wafer machines, P5000, Tegal, LAM):
Reactor pressure: 2.5 to 7 Pa
RF energy (variable): 1000 to 2500 watts
DC bias: -200 to -350 volts
Chlorine flow: 30 to 60 sccm
Nitrogen flow: 50 to 300 sccm
Argon flow: 50 to 300 sccm.

Die Fig. 1 und 2 zeigen im Schnittbild die durch das er­ findungsgemäße Verfahren erhaltenen Aluminiumstrukturen. Dabei gelten folgende Bezugszeichen: Figs. 1 and 2 show the aluminum structures obtained by the process according to he invention in a sectional view. The following reference numbers apply:

1 = Siliziumsubstrat
2 = SiO2-Schicht
3 = Titan/Titannitrid-Schicht
4 = Aluminium/Silizium/Kupfer-Schicht
5 = Titannitrid- oder amorphe Silizium-Schicht
6 = Fotolackmaske
7 = Seitenwandpassivierungsschicht. 1 = silicon substrate
2 = SiO 2 layer
3 = titanium / titanium nitride layer
4 = aluminum / silicon / copper layer
5 = titanium nitride or amorphous silicon layer
6 = photoresist mask
7 = sidewall passivation layer.

Die Fig. 1 zeigt eine Aluminiumstruktur mit senkrechten Flanken; in Fig. 2 ist eine positiv geneigte Aluminium- Flanke dargestellt. Unterschied in der Prozeßführung bei Fig. 1 D.C-Bias niedrig, bei Fig. 2 D.C-Bias hoch. Figs. 1 shows an aluminum structure having vertical edges; in Fig. 2 is a positively sloped aluminum is shown flank. Difference in the process control in Fig. 1 DC bias low, in Fig. 2 DC bias high.

Claims (7)

1. Verfahren zum anisotropen Trockenätzen von Aluminium bzw. Aluminiumlegierungen enthaltenden Leiterbahnebenen (4) in inte­ grierten Halbleiterschaltungen, bei denen als Ätzmaske eine Fotolackschicht (6) verwendet wird, dadurch gekennzeichnet, daß der Ätzprozeß in einem aus Chlor, Stickstoff und Argon be­ stehenden Plasma durchgeführt wird.1. A method for anisotropic dry etching of aluminum or aluminum alloy-containing conductor levels ( 4 ) in inte grated semiconductor circuits in which a photoresist layer ( 6 ) is used as an etching mask, characterized in that the etching process in a plasma consisting of chlorine, nitrogen and argon is carried out. 2. Verfahren nach Anspruch 1, dadurch gekennzeichnet, daß der Druck im Reaktor auf 2,5 bis 7 Pa, die Hochfrequenz­ leistung im Bereich von 1000 bis 2500 Watt und die DC-Bias- Spannung im Bereich von -200 bis -350 Volt eingestellt wird.2. The method according to claim 1, characterized, that the pressure in the reactor to 2.5 to 7 Pa, the high frequency power in the range of 1000 to 2500 watts and the DC bias Voltage is set in the range of -200 to -350 volts. 3. Verfahren nach Anspruch 1 oder 2, dadurch gekennzeichnet, daß der Gasdurchfluß im Reaktor von Chlor:Stickstoff:Argon im Verhältnis von 1 : 2-5 : 2-5 eingestellt wird.3. The method according to claim 1 or 2, characterized, that the gas flow in the reactor of chlorine: nitrogen: argon in Ratio of 1: 2-5: 2-5 is set. 4. Verfahren nach Anspruch 3, dadurch gekennzeichnet, daß der Gasdurchfluß auf
30 bis 60 sccm Chlor
50 bis 300 sccm Stickstoff und
50 bis 300 sccm Argon eingestellt wird.4. The method according to claim 3, characterized in that the gas flow on
30 to 60 sccm chlorine
50 to 300 sccm nitrogen and
50 to 300 sccm argon is set. 5. Verfahren nach einem der Ansprüche 1 bis 4, dadurch gekennzeichnet, daß die Fotolackmaske (6) nach der Ätzung in einem aus Sauer­ stoff und Argon bestehenden Plasma entfernt wird.5. The method according to any one of claims 1 to 4, characterized in that the photoresist mask ( 6 ) is removed after the etching in a plasma consisting of oxygen and argon. 6. Verfahren nach einem der Ansprüche 1 bis 5, dadurch gekennzeichnet, daß zugleich mit der Aluminium- bzw. der Aluminiumlegierungs­ schicht (4) eine als Diffusionsbarriere in Sandwich-Struktur mit der Aluminiumschicht (4) aufgebrachte, aus Titan und/oder aus Titannitrid oder aus amorphem Silizium bestehende Schicht (3, 5) mitgeätzt wird.6. The method according to any one of claims 1 to 5, characterized in that at the same time with the aluminum or the aluminum alloy layer ( 4 ) as a diffusion barrier in a sandwich structure with the aluminum layer ( 4 ), made of titanium and / or titanium nitride or layer ( 3 , 5 ) consisting of amorphous silicon is also etched. 7. Verfahren nach einem der Ansprüche 1 bis 6, dadurch gekennzeichnet, daß als Material für die Leiterbahnebenen eine Aluminium/ Silizium/Kupfer-Legierung verwendet wird.7. The method according to any one of claims 1 to 6, characterized, that as material for the conductor track levels an aluminum / Silicon / copper alloy is used.
DE19893940083 1989-12-04 1989-12-04 Anisotropic dry etching of aluminium (alloy) circuits - using plasma of chlorine, nitrogen and argon Granted DE3940083A1 (en)

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DE19893940083 DE3940083A1 (en) 1989-12-04 1989-12-04 Anisotropic dry etching of aluminium (alloy) circuits - using plasma of chlorine, nitrogen and argon

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DE3940083A1 true DE3940083A1 (en) 1991-06-13
DE3940083C2 DE3940083C2 (en) 1993-08-19

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Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0535540A2 (en) * 1991-10-02 1993-04-07 Siemens Aktiengesellschaft Etching process for aluminium-containing coatings
DE4241045C1 (en) * 1992-12-05 1994-05-26 Bosch Gmbh Robert Process for anisotropic etching of silicon
DE4241453A1 (en) * 1992-12-09 1994-06-16 Daimler Benz Ag Plasma etching of pits in silicon@ - has a non-reactive step between etching phases to protect the pit walls against the next etching action
EP0622477A1 (en) * 1993-02-24 1994-11-02 Applied Materials, Inc. Etching aluminum and its alloys using HC1, C1-containing etchant and N2
WO1998015972A1 (en) * 1996-10-07 1998-04-16 Robert Bosch Gmbh Process for anisotropic plasma etching of different substrates
US5849641A (en) * 1997-03-19 1998-12-15 Lam Research Corporation Methods and apparatus for etching a conductive layer to improve yield
US6489248B2 (en) 1999-10-06 2002-12-03 Applied Materials, Inc. Method and apparatus for etch passivating and etching a substrate
US6818562B2 (en) 2002-04-19 2004-11-16 Applied Materials Inc Method and apparatus for tuning an RF matching network in a plasma enhanced semiconductor wafer processing system
US7682518B2 (en) 2003-08-28 2010-03-23 Applied Materials, Inc. Process for etching a metal layer suitable for use in photomask fabrication
US7786019B2 (en) 2006-12-18 2010-08-31 Applied Materials, Inc. Multi-step photomask etching with chlorine for uniformity control
US7790334B2 (en) 2005-01-27 2010-09-07 Applied Materials, Inc. Method for photomask plasma etching using a protected mask
US7829243B2 (en) 2005-01-27 2010-11-09 Applied Materials, Inc. Method for plasma etching a chromium layer suitable for photomask fabrication
US7879510B2 (en) 2005-01-08 2011-02-01 Applied Materials, Inc. Method for quartz photomask plasma etching
US8293430B2 (en) 2005-01-27 2012-10-23 Applied Materials, Inc. Method for etching a molybdenum layer suitable for photomask fabrication

Families Citing this family (1)

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Publication number Priority date Publication date Assignee Title
DE10324570A1 (en) * 2003-05-30 2004-12-23 Daimlerchrysler Ag Surface treatment by spark erosion of metal or metal compounds, especially from the surface of an engine with an aluminum-silicate cylinder running surface, whereby the cylinder itself acts as the cathode for plasma formation

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EP0370775A2 (en) * 1988-11-21 1990-05-30 Kabushiki Kaisha Toshiba Method of manufacturing semiconductor device

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US4351696A (en) * 1981-10-28 1982-09-28 Fairchild Camera & Instrument Corp. Corrosion inhibition of aluminum or aluminum alloy film utilizing bromine-containing plasma
EP0370775A2 (en) * 1988-11-21 1990-05-30 Kabushiki Kaisha Toshiba Method of manufacturing semiconductor device

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Bogle-Rohwer, E. et.al: Wall Profile Control in a Triode Etcher. In: Solid Technol., April 1985S. 251-255 *
Bollinger, D. et.al.: Reactive Ion Etching: Its Basis and Future. In: Solid State Technol., Mai 1984, S. 111-117 *
Efremow, N.N. et.al: Anisotropic etching of Al by a directed Cl¶2¶ flux. In: J. Vac. Sci. Technol B4(1), Jan/Feb. 1986, S. 337-340 *
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Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0535540A2 (en) * 1991-10-02 1993-04-07 Siemens Aktiengesellschaft Etching process for aluminium-containing coatings
EP0535540A3 (en) * 1991-10-02 1994-10-19 Siemens Ag Etching process for aluminium-containing coatings
DE4241045C1 (en) * 1992-12-05 1994-05-26 Bosch Gmbh Robert Process for anisotropic etching of silicon
US5501893A (en) * 1992-12-05 1996-03-26 Robert Bosch Gmbh Method of anisotropically etching silicon
DE4241453A1 (en) * 1992-12-09 1994-06-16 Daimler Benz Ag Plasma etching of pits in silicon@ - has a non-reactive step between etching phases to protect the pit walls against the next etching action
EP0622477A1 (en) * 1993-02-24 1994-11-02 Applied Materials, Inc. Etching aluminum and its alloys using HC1, C1-containing etchant and N2
WO1998015972A1 (en) * 1996-10-07 1998-04-16 Robert Bosch Gmbh Process for anisotropic plasma etching of different substrates
US5849641A (en) * 1997-03-19 1998-12-15 Lam Research Corporation Methods and apparatus for etching a conductive layer to improve yield
US6489248B2 (en) 1999-10-06 2002-12-03 Applied Materials, Inc. Method and apparatus for etch passivating and etching a substrate
US6818562B2 (en) 2002-04-19 2004-11-16 Applied Materials Inc Method and apparatus for tuning an RF matching network in a plasma enhanced semiconductor wafer processing system
US7682518B2 (en) 2003-08-28 2010-03-23 Applied Materials, Inc. Process for etching a metal layer suitable for use in photomask fabrication
US7879510B2 (en) 2005-01-08 2011-02-01 Applied Materials, Inc. Method for quartz photomask plasma etching
US7790334B2 (en) 2005-01-27 2010-09-07 Applied Materials, Inc. Method for photomask plasma etching using a protected mask
US7829243B2 (en) 2005-01-27 2010-11-09 Applied Materials, Inc. Method for plasma etching a chromium layer suitable for photomask fabrication
US8293430B2 (en) 2005-01-27 2012-10-23 Applied Materials, Inc. Method for etching a molybdenum layer suitable for photomask fabrication
US7786019B2 (en) 2006-12-18 2010-08-31 Applied Materials, Inc. Multi-step photomask etching with chlorine for uniformity control

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