DE4116321A1 - Assembly of sensor-chip on printed circuit board - obtd. by gluing chip to carrier material, attaching to PCB inside ring shaped barrier and filling by injection moulding - Google Patents

Assembly of sensor-chip on printed circuit board - obtd. by gluing chip to carrier material, attaching to PCB inside ring shaped barrier and filling by injection moulding

Info

Publication number
DE4116321A1
DE4116321A1 DE19914116321 DE4116321A DE4116321A1 DE 4116321 A1 DE4116321 A1 DE 4116321A1 DE 19914116321 DE19914116321 DE 19914116321 DE 4116321 A DE4116321 A DE 4116321A DE 4116321 A1 DE4116321 A1 DE 4116321A1
Authority
DE
Germany
Prior art keywords
chip
board
sensor
assembly
pcb
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
DE19914116321
Other languages
German (de)
Inventor
Wolfgang Beck
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ERMIC GmbH
Original Assignee
ERMIC GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ERMIC GmbH filed Critical ERMIC GmbH
Priority to DE19914116321 priority Critical patent/DE4116321A1/en
Publication of DE4116321A1 publication Critical patent/DE4116321A1/en
Ceased legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
    • G01L19/0007—Fluidic connecting means
    • G01L19/003—Fluidic connecting means using a detachable interface or adapter between the process medium and the pressure gauge
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
    • G01L19/14—Housings
    • G01L19/147—Details about the mounting of the sensor to support or covering means

Abstract

Assembly prepn. features attaching a semiconductor chip to a carrier with the same or a lower expansion coefft. pref. Si or quartz-glass, and the same or lower material thickness, pref. using a thin lamination foil made of polymerisable material. A cavity is formed on the PCB for the chip-assembly using another thickness of the PCB material by laminating this to the main PCB. This surround is pref. 10-50 micron thinner than the chip and carrier assembly. The chip is mounted inside the ring and sensitive areas covered with a ductile foil, e.g. Al or Cu or temp. resistant polymer. The PCB has holes to allow penetration and locking on of the moulding material. The assembly is placed in the injection moulding machine, with a defined pressure acting on the chip surface, and plastic injected inside the ring.

Description

Die Erfindung betrifft ein Verfahren zur Häusung von vorzugsweise Sensor-Halbleiterbauelementen in Chip on Boardtechnik, bei denen die Chipoberfläche bzw. die selektiven Sensorflächen frei von Abdeckmaterial sind und bei denen die Chipgeometrie zur Vermeidung von Deformationen insbesondere Durchbiegung stabilisiert ist.The invention relates to a method for housing preferably sensor semiconductor components in chip on Board technology in which the chip surface or selective sensor surfaces are free of masking material and where the chip geometry to avoid deformation deflection in particular is stabilized.

Die Erfindung findet in der Elektronikindustrie vorzugsweise zur Herstellung von Sensor-Halbleiterbauelementen, bei denen die selektiven Flächen frei von Abdeckungen bleiben und die Chipgeometrie nicht wesentlich beeinflußt werden darf, Anwendung.The invention preferably takes place in the electronics industry for the production of sensor semiconductor components in which the selective areas remain free of covers and the Chip geometry must not be significantly influenced, Application.

Es ist bekannt die Hermetisierung der Kontaktbereiche mittels Pasten bestehend aus härtbaren Epoxid- oder Silikonharzen, die mit geeigneten Füllstoff wie Quarzmehl, Al₂O₃ in Pulverform u. a. versetzt mit Pigmenten, abzudecken.The hermeticization of the contact areas is known using pastes consisting of curable epoxy or Silicone resins with suitable filler such as quartz powder, Al₂O₃ in powder form u. a. mixed with pigments to cover.

Es ist weiterhin bekannt Sensorhalbleiterbauelemente in Chip on Boardtechnik zu montieren, die Anschlüsse in Drahtbondtechnik, Beam-Lead oder Tape-Kontaktierung auszuführen und die Kontaktbereiche dosiert mit Abdeckmaterial gegen mechanische und chemische Einflüsse zu schützen, wobei die definierte Laterale Ausbreitung des Abdeckmaterials bzw. die Formgebung nicht genau definiert werden kann.Sensor semiconductor components in chip are also known to mount on board technology, the connections in Wire bonding technology, beam lead or tape contacting perform and the contact areas dosed with Cover material against mechanical and chemical influences protect, the defined lateral spread of the Cover material or the shape not exactly defined can be.

Es ist weiterhin bekannt die partielle Beschichtung der Kontaktbereiche in der mechanischen Abdeckung der selektiven Bereiche durch Folien, z. B. Haftfolie, die nach dem Beschichtungs- und Härtevorgang wieder entfernt werden, durchzuführen.It is also known the partial coating of the Contact areas in the mechanical cover of the selective Areas through foils, e.g. B. adhesive film after the Coating and hardening process are removed again, perform.

Bekannt ist weiterhin die Hermetisierung der Kontaktbereiche im Gießverfahren durchzuführen, wobei die Konfiguration der Hermetisierung durch eine Form gegeben ist.The hermeticization of the contact areas is also known perform in the casting process, the configuration of the Hermetization is given by a form.

Nachteile dieser bekannten Verfahren sind, daß die definierte Formgebung und die Abdeckung der sensitiven Flächen nicht sicher ist und daß die partielle Beschichtung der Sensoroberfläche und völligem Ausfüllen der geometrisch kleinen Volumina unbefriedigend ist.Disadvantages of these known methods are that defined shape and the coverage of the sensitive Areas are not safe and that the partial coating the sensor surface and completely filling the geometrically small volumes is unsatisfactory.

Der Erfindung liegt die Aufgabe zugrunde, die partielle Hermetisierung von Sensor-Halbleiterbauelementen, montiert in Chip on Boardtechnik, bei derThe invention has for its object the partial Hermetization of sensor semiconductor components, assembled in chip on board technology, at

  • 1. die laterale Begrenzung der Hermetisierung1. the lateral limitation of the hermeticization
  • 2. die Geometrie der partiellen Häusung2. the geometry of the partial housing
  • 3. die Dichte des Hermetisierungsmaterials3. the density of the hermetic material

reproduzierbar beherrscht wird und dabei die durch die hohe Ausdehnung des Leiterkartenmaterials und des Plasts zur Hermetisierung erzeugten Deformation bzw. Verbiegung der Chips gering gehalten wird.is reproducibly mastered and the high Expansion of the circuit board material and the plastic for Hermetization caused deformation or bending of the Chips is kept low.

Nachstehend soll die Erfindung beispielhaft erläutert werden.The invention is explained below by way of example will.

Zur selektiven Häusung von Sensorhalbleiterbauelementen wird zunächst das Sensorchip auf einem Zwischenträger etwa gleicher lateraler Geometrie mittels eines dünnen Laminats, welches beidseits mit einer nicht gehärteten polymerisierba­ ren Schicht versehen ist, befestigt. Der zu verwendende Zwischenträger soll dabei gleichen oder kleinen Ausdehnungskoeffizienten aufweisen z. B. Quarzglas oder Silizium bei Aufbau eines Sensorchips aus Silizium. Die Materialdicken Sensorchip zu Chipträger verhalten sich wie 1 : 1.For the selective packaging of sensor semiconductor components first the sensor chip on an intermediate carrier, for example same lateral geometry using a thin laminate, which is coated on both sides with an uncured polymerisable Ren layer is attached. The one to use Intermediate carrier should be the same or small Expansion coefficients have z. B. quartz glass or Silicon when building a sensor chip made of silicon. The Material-thick sensor chip to chip carrier behave like 1: 1.

Die Montage erfolgt unter einer Temperatur z. B. bei 160°C ca. 1,5 h, wobei Sensorchip und Zwischenträger unter Zwischenlage der Laminatfolie zwischen ebene Platten gespannt werden. Die Chipoberfläche ist während des Härtevorganges mit einer Schutzfolie abgedeckt. Durch den Abkühlvorgang werden Sensorchip und Chipträger gegeneinander verspannt und damit die Geometrie, besonders die Ebenheit der Sensoroberfläche stabilisiert. Auf die mit der Anschlußkonfiguration versehene Leiterplatte wird eine zweite nichtstrukturierte Leiterplatte, die im Bereich des einzubauenden Sensors einschließlich der Anschlüsse durchbrochen ist, auflaminiert. Die Materialdicke der mit den Durchbrüchen versehenen Leiterplatte wird so gewählt, daß diese gegenüber dem Sensorchip mit Zwischenträger 10-50 µm geringer ist. Anschließend wird das so vorbereitete Sensorchip in die Kavität des Leiterkartenlaminats vorzugsweise durch Klebverbindung eingesetzt. Nach diesem Montageschritt wird die Leiterplatte mit dem Sensorchip in die Spritzpreßform eingesetzt und die Freiräume unter Druck bei einer Temperatur von 150-180°C ausgespritzt.The assembly takes place under a temperature z. B. at 160 ° C. approx. 1.5 h, with the sensor chip and intermediate carrier under Interlayer of the laminate film between flat panels be excited. The chip surface is during the Hardening process covered with a protective film. By the The cooling process is the sensor chip and chip carrier against each other tense and thus the geometry, especially the flatness stabilizes the sensor surface. On the one with the Connection configuration provided PCB is a second unstructured circuit board, which is in the area of sensor to be installed including the connections is broken, laminated. The material thickness of the with the printed circuit board provided with openings is selected so that this compared to the sensor chip with intermediate carrier 10-50 µm is less. Then the prepared Sensor chip in the cavity of the printed circuit board laminate preferably used by adhesive bonding. After this Assembly step is the circuit board with the sensor chip in the injection mold and the free spaces under pressure sprayed at a temperature of 150-180 ° C.

Claims (8)

1. Verfahren zur selektiven Häusung von Sensor-Halbleiter­ bauelementen in Chip-on-Boardtechnik auf der Basis der Spritzpreßtechnik und der Leiterkartenlaminiertechnik gekennzeichnet dadurch, daß die Sensorchips auf einem Zwischenträger mit gleichem oder geringerem Ausdehnungskoeffizienten sowie mit gleicher oder geringerer Materialdicke vor der Montage auf dem Board verspannt werden und daß diese Verbindung mit einem Material mit einem wesentlich höheren Ausdehnungskoeffizienten.1. A method for the selective packaging of sensor semiconductor components in chip-on-board technology on the basis of injection molding technology and printed circuit board lamination technology, characterized in that the sensor chips on an intermediate carrier with the same or less expansion coefficient and with the same or less material thickness before assembly on the Board are clamped and that this connection with a material with a much higher coefficient of expansion. 2. Verfahren nach Anspruch 1, gekennzeichnet dadurch, daß für den Zwischenträger Quarzglas oder Silizium verwendet wird.2. The method according to claim 1, characterized in that used for the intermediate carrier quartz glass or silicon becomes. 3. Verfahren nach Anspruch 1 und 2, gekennzeichnet dadurch, daß für die Verbindung und Verspannung der Sensorchips mit dem Zwischenträger eine dünne gehärtete Laminatfolie, polymerisierbaren Beschichtung versehen ist.3. The method according to claim 1 and 2, characterized in that that for the connection and tensioning of the sensor chips with the intermediate carrier a thin hardened laminate film, polymerizable coating is provided. 4. Verfahren nach Anspruch 1, gekennzeichnet dadurch, daß die Dicke des Sensorchips mit Zwischenträger gegenüber der in Board befindlichen Kavität beispielsweise 10-50 µm größer ist.4. The method according to claim 1, characterized in that the thickness of the sensor chip with intermediate carrier opposite the cavity in the board, for example 10-50 µm is bigger. 5. Verfahren nach Anspruch 1-5, gekennzeichnet dadurch, daß während des Spritzpreßvorganges die sensitive Chipoberfläche und die Oberfläche des laminierten Boards mit einer duktilen Folie, wie Aluminium, Kupfer oder temperaturbeständigem Kunststoff abgedeckt wird.5. The method according to claim 1-5, characterized in that the sensitive during the injection molding process Chip surface and the surface of the laminated board with a ductile foil, such as aluminum, copper or temperature-resistant plastic is covered. 6. Verfahren nach Anspruch 1-6, gekennzeichnet dadurch, daß das Basisboard des Laminats mit Durchbrüchen oder Bohrungen zum Anspritzen, zur Belüftung der Kavität und zur Verankerung des zur Häusung verwendeten Plastmaterials mit dem Board aufweist.6. The method according to claim 1-6, characterized in that the base board of the laminate with openings or Bores for injection, for ventilation of the cavity and to anchor the used for housing Has plastic material with the board. 7. Verfahren nach Anspruch 1-6, gekennzeichnet dadurch, daß die Sensorchipoberfläche während des Spritzpreßvorganges mit definiertem Druck gegen die Windung der Form oder der Preßplatte mit zwischengelegter duktiler Folie gedrückt wird.7. The method according to claim 1-6, characterized in that the sensor chip surface during the injection molding process with defined pressure against the winding of the form or the Press plate pressed with ductile film interposed becomes. 8. Verfahren nach Anspruch 1-7, gekennzeichnet dadurch, daß während des Preßvorganges die Chipoberfläche und die Boardoberfläche in eine Ebene gebracht werden und die duktile Folie die sensitive Chipoberfläche schützt und abdichtet.8. The method according to claim 1-7, characterized in that during the pressing process the chip surface and Board surface are brought into one level and the ductile film protects the sensitive chip surface and seals.
DE19914116321 1991-05-16 1991-05-16 Assembly of sensor-chip on printed circuit board - obtd. by gluing chip to carrier material, attaching to PCB inside ring shaped barrier and filling by injection moulding Ceased DE4116321A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DE19914116321 DE4116321A1 (en) 1991-05-16 1991-05-16 Assembly of sensor-chip on printed circuit board - obtd. by gluing chip to carrier material, attaching to PCB inside ring shaped barrier and filling by injection moulding

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19914116321 DE4116321A1 (en) 1991-05-16 1991-05-16 Assembly of sensor-chip on printed circuit board - obtd. by gluing chip to carrier material, attaching to PCB inside ring shaped barrier and filling by injection moulding

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DE4116321A1 true DE4116321A1 (en) 1991-11-28

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4241333A1 (en) * 1991-12-09 1993-06-17 Mitsubishi Electric Corp Semiconductor sensor for flow meter - contains semiconducting chip with sensor element contg. flow detector element with heating and temp. sensitive elements.

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DE3330975A1 (en) * 1983-08-27 1985-03-21 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Method and apparatus for encapsulating a semiconductor component
DE3508385A1 (en) * 1984-03-09 1985-09-26 Osakeyhtiö Lohja Ab, Virkkala METHOD FOR ENCAPSULATING SEMICONDUCTOR COMPONENTS THAT ARE ARRANGED ON A CARRIER TAPE
US4644384A (en) * 1984-02-02 1987-02-17 National Semiconductor Corporation Apparatus and method for packaging eprom integrated circuits
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DE3508385A1 (en) * 1984-03-09 1985-09-26 Osakeyhtiö Lohja Ab, Virkkala METHOD FOR ENCAPSULATING SEMICONDUCTOR COMPONENTS THAT ARE ARRANGED ON A CARRIER TAPE
US4698662A (en) * 1985-02-05 1987-10-06 Gould Inc. Multichip thin film module
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DE3635375C2 (en) * 1986-10-17 1988-07-21 W.C. Heraeus Gmbh, 6450 Hanau, De
EP0306890A1 (en) * 1987-09-11 1989-03-15 Fairchild Semiconductor Corporation A semiconductor module having active devices disposed in substrate cavities
DD273527A1 (en) * 1988-06-27 1989-11-15 Tech Hochschule C Schorlemmer METHOD FOR THE SECULATION OF SEMICONDUCTOR SENSORS
US4975765A (en) * 1988-07-22 1990-12-04 Contraves Ag Highly integrated circuit and method for the production thereof
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DE3937522A1 (en) * 1989-11-10 1991-05-16 Texas Instruments Deutschland SEMICONDUCTOR PRESSURE SENSOR CONNECTED TO A CARRIER ELEMENT

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4241333A1 (en) * 1991-12-09 1993-06-17 Mitsubishi Electric Corp Semiconductor sensor for flow meter - contains semiconducting chip with sensor element contg. flow detector element with heating and temp. sensitive elements.
US5396795A (en) * 1991-12-09 1995-03-14 Mitsubishi Denki Kabushiki Kaisha Semiconductor sensor device for measuring intake flow rate

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