DE4141386A1 - Hall sensor integrated on semiconductor chip mfd. using semiconductor processing - has current conductor for producing magnetic field and magnetic field regional cover of ferromagnetic material and substrate with two different conducting types - Google Patents

Hall sensor integrated on semiconductor chip mfd. using semiconductor processing - has current conductor for producing magnetic field and magnetic field regional cover of ferromagnetic material and substrate with two different conducting types

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Publication number
DE4141386A1
DE4141386A1 DE4141386A DE4141386A DE4141386A1 DE 4141386 A1 DE4141386 A1 DE 4141386A1 DE 4141386 A DE4141386 A DE 4141386A DE 4141386 A DE4141386 A DE 4141386A DE 4141386 A1 DE4141386 A1 DE 4141386A1
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Prior art keywords
hall sensor
magnetic field
sensor according
hall
ferromagnetic material
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Granted
Application number
DE4141386A
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German (de)
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DE4141386C2 (en
Inventor
Lothr Dipl Phys Blossfeld
Soenke Dipl Phys Dr Mehrgardt
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TDK Micronas GmbH
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Deutsche ITT Industries GmbH
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Priority to DE4141386A priority Critical patent/DE4141386C2/en
Publication of DE4141386A1 publication Critical patent/DE4141386A1/en
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Publication of DE4141386C2 publication Critical patent/DE4141386C2/en
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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
    • G01D5/00—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable
    • G01D5/12—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means
    • G01D5/14—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means influencing the magnitude of a current or voltage
    • G01D5/142—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means influencing the magnitude of a current or voltage using Hall-effect devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/07—Hall effect devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N59/00—Integrated devices, or assemblies of multiple devices, comprising at least one galvanomagnetic or Hall-effect element covered by groups H10N50/00 - H10N52/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Abstract

The substrate (1) of one conducting type, is provided with a zone (2) embedded in its surface of the opposing conducting type, representing the Hall plate. A first insulating layer (3) covers the substrate surface, and a metal loop (4) mounted on the insulating layer (3) overlaps the zone (2). A second insulating layer (5) covers the metal loop (4) and a covering layer (6) of a ferromagnetic material, overlies the entire structure. The insulating layers are made of silicon dioxide and the metal loop is made of aluminium. USE/ADVANTAGE - Sensors are used as sensing elements for micro-electronics and simultaneously as interface between surrounding and data processing, above all for automation of control and regulating processes. Has sufficient sensitivity.

Description

Die Erfindung betrifft einen in Halbleitertechnik hergestellten Hallsensor.The invention relates to a semiconductor technology Hall sensor manufactured.

Sensoren sind die Fühlerelemente der Mikroelektronik, sie sind gleichzeitig Schnittstelle zwischen Umgebung und Informationsverarbeitung, und werden vor allem in der Automatisierung von Steuer- und Regelprozessen angewendet. Sie sind ferner Meßwertaufnehmer, die eine Rückmeldung über Zustandsveränderungen der technischen Systeme ermöglichen. Als Bindeglieder zwischen der analogen Erfassung von Temperatur, Druckbeschleunigung etc. mit der digitalen Einrichtung der Prozessoren entscheiden sie wesentlich über die Meßgeschwindigkeit mit.Sensors are the sensor elements of microelectronics, they are simultaneously the interface between the environment and Information processing, and are mainly used in the Automation of control and regulation processes applied. They are also sensors that provide feedback on Enable changes in the state of the technical systems. As a link between the analog acquisition of Temperature, pressure acceleration etc. with the digital They make a significant decision about the setup of the processors the measuring speed with.

Die Messung von Gleichströmen erfolgt überlicherweise über einen Spannungsabfall von Widerständen. Hohe Stromstärken erzeugen jedoch große Leistungen und bei vielen Anwendungsbereichen einen nicht zu tolerierenden Spannungsabfall. Besonders kritisch ist diese Art der Messung, wenn mit kurzen hohen Stromspitzen zu rechnen ist.DC currents are usually measured using a voltage drop of resistors. High currents but produce great accomplishments and with many Areas of application an intolerable Voltage drop. This type of is particularly critical Measurement when short, high current peaks are to be expected.

Die Messung von Wechsel strömen über Spulen haben den Nachteil, daß sehr schnelle Stromänderungen hohe Spitzenspannungen erzeugen, die eine Auswertelektronik zerstören können. Die Verwendung von Hallsensoren kann dies vermeiden.The measurement of alternating currents over coils have the Disadvantage that very fast changes in current Generate peak voltages that an evaluation electronics can destroy. The use of Hall sensors can do this avoid.

Hallsensoren haben sich als eine wesentliche Bereicherung der Sensorenpalette erwiesen. Sie stellen ein ideales Interface zwischen dem genannten mechanischen und den elektronischen Systemen dar.Hall sensors have proven to be an essential asset of the sensor range. They represent an ideal Interface between the mechanical and the electronic systems.

Die bislang bekannten Hallsensoren, hergestellt mittels Halbleitertechnik in Silizium, sind aufgrund der geringen Elektronenbeweglichkeit darin nicht sehr empfindlich. Magnetfeldstärken von 100 G und mehr sind notwendig, um die Toleranzen bei der Herstellung der Hallplatte und der Auswertelektronik abzudecken.The Hall sensors known to date, produced by means of  Semiconductor technology in silicon, are due to the low Electron mobility in it is not very sensitive. Magnetic field strengths of 100 G and more are necessary in order to Tolerances in the manufacture of the Hall plate and the Cover evaluation electronics.

Der Abstand der Hallsensoren vom Magneten oder der magnetfelderzeugenden Spule oder dergleichen darf deshalb nur sehr gering sein. Zwangsläufig wird er durch das Gehäuse, in dem sich der Sensor befindet, und der verwendeten Mechanik bestimmt. Mißt man den elektrischen Strom über sein Magentfeld, so kann der Sensor unbeweglich gegenüber dem Magnetfeld gehalten sein. Da ein stromdurchflossener Leiter nur ein sehr schwaches Magentfeld erzeugt, das zudem mit gemäß der Formel 1/r abnimmt, ist der Leiter möglichst unmittelbar in der Nähe des Hallelements anzubringen.The distance of the Hall sensors from the magnet or the magnetic field generating coil or the like may therefore only be very small. It is inevitably determined by the housing in which the sensor is located and the mechanics used. If one measures the electric current over his magnetic field, the sensor can be held immovably in relation to the magnetic field. Since a current-carrying conductor only generates a very weak magnetic field, which also decreases with the formula 1 / r , the conductor must be attached as close as possible to the Hall element.

Bei einer Stromstärke von ca. 1A erzeugt ein Stromleiter im Abstand von 100 um ein Magnetfeld in der Größenordnung von 20 G, das heißt eine Feldstärke, die einen sehr empfindlichen Sensor erfordern. Mit Hilfe einer Spule und entsprechenden Windungen bzw. einem höheren Strom läßt sich der Wert erhöhen, so daß der Hallsensor anspricht. Eine Spule läßt sich jedoch zusammen mit einem Halbleiterchip nicht integrieren und die Anordnung wäre auch zu teuer.At a current of approx. 1A, a current conductor in the Distance of 100 µm around a magnetic field of the order of 20 G, that means a field strength that a very sensitive sensor. With the help of a coil and corresponding turns or a higher current can increase the value so that the Hall sensor responds. A However, the coil can be used together with a semiconductor chip not integrate and the arrangement would also be too expensive.

Der Erfindung, wie sie in den Ansprüchen gekennzeichnet ist, liegt somit die Aufgabe zugrunde, einen Hallsensor anzugeben, der bei Integrierung auf einem Halbleiterchip eine hinreichende Empfindlichkeit aufweist.The invention as characterized in the claims the task is based on a Hall sensor to be specified when integrated on a semiconductor chip has sufficient sensitivity.

Die Erfindung wird nachstehend anhand der einzelnen Figuren der Zeichnung näher erläutert, die verschiedenen Ausführungsbeispiele darstellen. Gleiche Merkmale in ihnen sind dabei mit gleichen Bezugszeichen versehen. The invention is described below with reference to the individual figures the drawing explains the various Represent embodiments. Same features in them are provided with the same reference numerals.  

Fig. 1 zeigt den Schnitt durch das Grundprinzip der Erfindung, Fig. 1 shows a section through the basic principle of the invention,

Fig. 2a zeigt die Draufsicht auf eine spezielle Ausbildungsform, Fig. 2a shows the top view of a special design form,

Fig. 2b zeigt den Schnitt durch Fig. 2a längs der Linie A-B Fig. 3 zeigt den Querschnitt durch eine andere spezielle Ausbildungsform der Erfindung, FIG. 2b shows the section through Fig. 2 along the line AB Fig. 3 shows the cross sectional view of another specific embodiment of the invention,

Fig. 4 und 5 zeigen weitere Ausbildungsformen der Erfindung FIGS. 4 and 5 show further embodiments of the invention

Das in Fig. 1 gezeigte Grundprinzip des erfindungsgemäßen Hallsensors zeigt den Siliziumhalbleiterkörper 1 vom p-Leitungstyp, in dessen Oberfläche eine Zone 2 vom entgegengesetzten Leitungstyp eingelassen ist, die die Hallplatte darstellt. Eine erste Isolierschicht 3 aus z. B. Siliziumdioxyd deckt den Aufbau ab. Auf der Isolierschicht ist eine Metallschleife 4, die Zone 2 überlappend, aufgebracht, um ein starkes Magnetfeld bei kleinen Strömen auf dem Halbleiterplättchen zu erzeugen. Metallbahnen in der Halbleitertechnik sind sehr dünn, sie können aber im Durchmesser galvanisch verstärkt werden. Die Metallschleife 4 wird von einer zweiten Isolierschicht 5 abgedeckt, die selbst wiederum mit einer Deckschicht 6 aus ferromagnetischem Material überzogen ist, die gleichsam den gesamten Aufbau umhüllt und damit das Magnetfeld verstärkt.The basic principle of the Hall sensor according to the invention shown in FIG. 1 shows the silicon semiconductor body 1 of the p-type conduction, in whose surface a zone 2 of the opposite conduction type is embedded, which represents the Hall plate. A first insulating layer 3 made of z. B. Silicon dioxide covers the structure. A metal loop 4 , overlapping zone 2 , is applied to the insulating layer in order to generate a strong magnetic field with small currents on the semiconductor die. Metal tracks in semiconductor technology are very thin, but they can be galvanically reinforced in diameter. The metal loop 4 is covered by a second insulating layer 5 , which in turn is covered with a cover layer 6 made of ferromagnetic material, which, as it were, envelops the entire structure and thus reinforces the magnetic field.

In den Fig. 2a und 2b ist ein Ausführungsbeispiel gezeigt, bei dem das Halbleiter-Trägerband 7 (leadframe) derart ausgebildet ist, daß ein Teil desselben eine Leiterbahn bildet, die als Metallschleife 4 für den Hallsensor wirkt. Diese Ausbildungsform eignet sich besonders für die Flip-Chip-Technik. In FIGS. 2a and 2b, an embodiment is shown in which the semiconductor carrier tape 7 (lead frame) is formed such that a part thereof forms a conductor track which acts as a metal loop 4 for the Hall sensor. This form of training is particularly suitable for flip-chip technology.

Fig. 2a zeigt dabei die Draufsicht auf das montierte, verkapselte Bauelement in geöffnetem Zustand. Auf dem Trägerband 7 ist das Halbleiterplättchen 8 mit der Hallplatte 2 befestigt, wobei diese über der Öffnung 9 in dem Trägerband zu liegen kommt. Man sieht, daß die Plattform des Trägerbandes 7, die das Halbleiterplättchen 8 trägt, von der üblichen Ausbildung derart abweicht, daß sie die erforderliche Metallschleife 4 bildet. Auf den Halbleiterplättchen 8 sind die entsprechenden Anschlußpads 10′ angeordnet, die mit den Kontaktfingern 11 verbunden sind. Fig. 2a shows the top view of the assembled, encapsulated device in the open state. The semiconductor plate 8 is fastened on the carrier tape 7 with the Hall plate 2 , which comes to lie above the opening 9 in the carrier tape. It can be seen that the platform of the carrier tape 7 , which carries the semiconductor die 8 , deviates from the usual configuration in such a way that it forms the required metal loop 4 . On the semiconductor chip 8 , the corresponding connection pads 10 'are arranged, which are connected to the contact fingers 11 .

Fig. 2b zeigt den Schnitt längs der Linie AB in Fig. 2. Man sieht hier den das Trägerband 7, auf das das Halbleiterplättchen aufgesetzt ist. Dessen Oberfläche ist die Hallplatte 2 eingelassen. Die ganze Anordnung kann wieder durch ein ferromagnetisches Material abgedeckt werden. FIG. 2b shows the section along the line AB in FIG. 2. Here you can see the carrier tape 7 on which the semiconductor die is placed. The surface of the Hall plate 2 is embedded. The whole arrangement can again be covered by a ferromagnetic material.

Fig. 3 zeigt den Schnitt durch eine weitere Ausbildungsform, bei der das Magnetfeld erzeugende Stromleiter aus ferromagnetischem Material als Trägerkörper 13 und Abdeckkappe 14 ausgebildet ist, also gleichsam einen Ring mit einem Spalt bildet, in deren Inneren der Halbleiterkörper in einer Kunststoffumhüllung verkapselt ist. Um ein besonders starkes Magnetfeld zu erzeugen, müssen die Magentfeldlinien möglichst nahe auf den Hallsensor 2 gebündelt werden. Zu diesem Zweck hat die Abdeckkappe 14 einen Ansatz 15, der sich in Richtung auf die in dem Halbleiterkörper angeordnete Hallplatte erstreckt. Dabei ist der Durchmesser des Ansatzes 15 so zu wählen, daß er nicht größer als die Hallplatte 2 im Halbleiterplättchen 8 ist. Fig. 3 shows the section through a further embodiment, in which the magnetic field generating current conductor made of ferromagnetic material is formed as a carrier body 13 and cover cap 14 , that is to say it forms a ring with a gap, in the interior of which the semiconductor body is encapsulated in a plastic envelope. In order to generate a particularly strong magnetic field, the magnetic field lines must be bundled as close as possible to the Hall sensor 2 . For this purpose, the cover cap 14 has an extension 15 which extends in the direction of the Hall plate arranged in the semiconductor body. The diameter of the extension 15 is to be selected so that it is not larger than the Hall plate 2 in the semiconductor wafer 8 .

Wie in Fig. 4 gezeigt, kann der Rahmen aus ferromagnetischem Material auch einteilig in Form eines Hüllkörpers 16 ausgebildet sein, wobei die Enden zu einem dem Ansatz 15 in der Fig. 4 entsprechenden Teil um 155 gebogen sind.As shown in FIG. 4, the frame made of ferromagnetic material can also be formed in one piece in the form of an enveloping body 16 , the ends being bent by 155 to form a part corresponding to the projection 15 in FIG. 4.

Eine weitere Ausbildungsform, und zwar die Anwendung der Erfindung in Verbindung mit einer gedruckten Schaltung ist in Fig. 5 gezeigt. Auf der Schaltungsplatine 17 sitzt der Halbleiterkörper 8 mit der integrierten Hallplatte 2. Er ist über Bonddrähte 111 mit den auf der Platine aufgelöteten Leiterbahnen 112 verbunden. Der Aufbau aus den genannten Teilen und der Kunststoffumhüllung 12 ist wie in Fig. 3 von einer aus der Unterschale 13 und der Abdeckkappe 14 bestehenden Hülle aus ferromagnetischem Material umgeben. Dabei erstreckt sich von der Unterschale 113 ausgehend der Fuß 18 in Richtung auf die Hallplatte 2, um die schon in Fig. 3 dort unter Zuhilfenahme des Ansatzes 15 angestrebte Wirkung zu erzielen.Another embodiment, the application of the invention in connection with a printed circuit is shown in Fig. 5. The semiconductor body 8 with the integrated Hall plate 2 is seated on the circuit board 17 . It is connected via bond wires 111 to the conductor tracks 112 soldered onto the circuit board. The structure of the parts mentioned and the plastic covering 12 is, as in FIG. 3, surrounded by a covering made of the lower shell 13 and the cover cap 14 made of ferromagnetic material. The foot 18 extends from the lower shell 113 in the direction of the Hall plate 2 in order to achieve the effect already sought there in FIG. 3 with the aid of the extension 15 .

Die Vorteile der Erfindung bestehen somit darin, daß in ihr ein Hallsensor angegeben wird, der auf einem Halbleiterplättchen integriert ist und gleichzeitig eine ausreichende Empfindlichkeit aufweist.The advantages of the invention are thus that in it a Hall sensor is specified which is based on a Is integrated and at the same time a has sufficient sensitivity.

Claims (9)

1. In Halbleitertechnik hergestellter integrierter Hallsensor mit einem Stromleiter zur Erzeugung des Magnetfeldes und einer Magnetfeldbereichabdeckung aus ferromagnetischem Material.1. Integrated in semiconductor technology Hall sensor with a current conductor for generating the Magnetic field and a magnetic field area cover ferromagnetic material. 2. Hallsensor nach Anspruch 1, gekennzeichnet durch ein Substrat (1) des einen Leitungstyps mit einer in seiner Oberfläche eingelassenen Zone (2) des entgegengesetzten Leitungstyps, die Hallplatte darstellend, einer die Substratoberfläche abdeckenden Isolierschicht (3), einer Metallschleife (4), die auf der Isolierschicht (3) die Zone (2) überlappend aufgebracht ist, einer zweiten, die Metallschleife (4) abdeckenden Isolierschicht (5), und einer den gesamten Aufbau überziehenden Deckschicht (6) aus ferromagnetischem Material.2. Hall sensor according to claim 1, characterized by a substrate ( 1 ) of one conduction type with a zone ( 2 ) of the opposite conduction type embedded in its surface, representing the Hall plate, an insulating layer ( 3 ) covering the substrate surface, a metal loop ( 4 ), which is applied to the insulating layer ( 3 ) overlapping the zone ( 2 ), a second insulating layer ( 5 ) covering the metal loop ( 4 ), and a covering layer ( 6 ) made of ferromagnetic material covering the entire structure. 3. Hallsensor nach Anspruch 2, dadurch gekennzeichnet, daß die Isolierschichten (3), (5) aus Siliziumdioxid bestehen.3. Hall sensor according to claim 2, characterized in that the insulating layers ( 3 ), ( 5 ) consist of silicon dioxide. 4. Hallsensor nach Anspruch 2, dadurch gekennzeichnet, daß die Metallschleife (4) aus Aluminium besteht.4. Hall sensor according to claim 2, characterized in that the metal loop ( 4 ) consists of aluminum. 5. Hallsensor nach einem der Ansprüche 1 bis 3, dadurch gekennzeichnet, daß die Metallschleife (4) als Teil des Trägerbandes ausgebildet ist und aus Kupfer besteht.5. Hall sensor according to one of claims 1 to 3, characterized in that the metal loop ( 4 ) is formed as part of the carrier tape and consists of copper. 6. Hallsensor nach einem der Ansprüche 1 bis 5, dadurch gekennzeichnet, daß auf dem Halbleiterplättchen eine Schaltung zur Auswertung des Sensorsignals mit integriert ist.6. Hall sensor according to one of claims 1 to 5, characterized characterized in that on the semiconductor die Integrated circuit for evaluating the sensor signal is. 7. Hallsensor nach Anspruch 2, dadurch gekennzeichnet, daß die Deckschicht (6) als einschaliger Hüllkörper (16) ausgebildet ist.7. Hall sensor according to claim 2, characterized in that the cover layer ( 6 ) is designed as a single-shell envelope ( 16 ). 8. Hallsensor nach Anspruch 2, dadurch gekennzeichnet, daß die Deckschicht (6) zweischalig mit ineinandergreifender Unterschale (13) und Abdeckkappe (14) ausgebildet ist.8. Hall sensor according to claim 2, characterized in that the cover layer ( 6 ) is formed with two shells with an interlocking lower shell ( 13 ) and cover cap ( 14 ). 9. Hallsensor nach Anspruch 2, dadurch gekennzeichnet, daß das Halbleiterbauelement (8) mit der Hallplatte (2) auf einer gedruckten Schaltungsplatine aufgesetzt ist und die ferromagnetische Abdeckung sowohl das Hallbauelement als auch eine oder mehrere Leiterbahnen der Platine umgibt.9. Hall sensor according to claim 2, characterized in that the semiconductor component ( 8 ) with the Hall plate ( 2 ) is placed on a printed circuit board and the ferromagnetic cover surrounds both the Hall component and one or more conductor tracks of the board.
DE4141386A 1991-12-16 1991-12-16 Hall sensor Expired - Fee Related DE4141386C2 (en)

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