DE59303966D1 - Plasmaerzeugungsvorrichtung - Google Patents

Plasmaerzeugungsvorrichtung

Info

Publication number
DE59303966D1
DE59303966D1 DE59303966T DE59303966T DE59303966D1 DE 59303966 D1 DE59303966 D1 DE 59303966D1 DE 59303966 T DE59303966 T DE 59303966T DE 59303966 T DE59303966 T DE 59303966T DE 59303966 D1 DE59303966 D1 DE 59303966D1
Authority
DE
Germany
Prior art keywords
plasma
generating device
tunnel
substrates
magnetic field
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE59303966T
Other languages
English (en)
Inventor
Pius Gruenenfelder
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
OC Oerlikon Balzers AG
Original Assignee
Balzers AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Balzers AG filed Critical Balzers AG
Application granted granted Critical
Publication of DE59303966D1 publication Critical patent/DE59303966D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
    • H01J37/3455—Movable magnets
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H01J37/3408—Planar magnetron sputtering
DE59303966T 1992-12-23 1993-11-29 Plasmaerzeugungsvorrichtung Expired - Lifetime DE59303966D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CH391192 1992-12-23

Publications (1)

Publication Number Publication Date
DE59303966D1 true DE59303966D1 (de) 1996-10-31

Family

ID=4266155

Family Applications (1)

Application Number Title Priority Date Filing Date
DE59303966T Expired - Lifetime DE59303966D1 (de) 1992-12-23 1993-11-29 Plasmaerzeugungsvorrichtung

Country Status (5)

Country Link
US (1) US5399253A (de)
EP (1) EP0603587B1 (de)
JP (1) JP3566327B2 (de)
AT (1) ATE143528T1 (de)
DE (1) DE59303966D1 (de)

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JP2970317B2 (ja) * 1993-06-24 1999-11-02 松下電器産業株式会社 スパッタリング装置及びスパッタリング方法
DE19511946C2 (de) * 1995-03-31 1997-07-24 Leybold Ag Vorrichtung zur Kathodenzerstäubung
US5685959A (en) * 1996-10-25 1997-11-11 Hmt Technology Corporation Cathode assembly having rotating magnetic-field shunt and method of making magnetic recording media
BE1011098A3 (fr) * 1997-04-10 1999-04-06 Cockerill Rech & Dev Procede et dispositif de decapage.
US6132632A (en) * 1997-09-11 2000-10-17 International Business Machines Corporation Method and apparatus for achieving etch rate uniformity in a reactive ion etcher
DE19746988A1 (de) * 1997-10-24 1999-05-06 Leybold Ag Zerstäuberkathode
SE511139C2 (sv) * 1997-11-20 1999-08-09 Hana Barankova Plasmabearbetningsapparat med vridbara magneter
US6093293A (en) * 1997-12-17 2000-07-25 Balzers Hochvakuum Ag Magnetron sputtering source
US6679977B2 (en) * 1997-12-17 2004-01-20 Unakis Trading Ag Method of producing flat panels
US6645353B2 (en) * 1997-12-31 2003-11-11 Intel Corporation Approach to optimizing an ILD argon sputter process
DE19819785A1 (de) * 1998-05-04 1999-11-11 Leybold Systems Gmbh Zerstäubungskathode nach dem Magnetron-Prinzip
US5980707A (en) * 1998-12-18 1999-11-09 Sierra Applied Sciences, Inc. Apparatus and method for a magnetron cathode with moving magnet assembly
EP1063679B1 (de) * 1999-06-21 2008-01-09 Bekaert Advanced Coatings NV. Magnetron mit beweglicher Magnetanordnung zur Kompensation des Erosionsprofils
JP2003514388A (ja) * 1999-11-15 2003-04-15 ラム リサーチ コーポレーション 処理システム用の材料およびガス化学剤
US7067034B2 (en) * 2000-03-27 2006-06-27 Lam Research Corporation Method and apparatus for plasma forming inner magnetic bucket to control a volume of a plasma
US20030010454A1 (en) * 2000-03-27 2003-01-16 Bailey Andrew D. Method and apparatus for varying a magnetic field to control a volume of a plasma
GB2393321B (en) * 2002-04-06 2005-06-29 Gencoa Ltd Plasma generation
DE10234858A1 (de) * 2002-07-31 2004-02-12 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Einrichtung zur Erzeugung einer Magnetron-Entladung
JP4470429B2 (ja) * 2002-09-30 2010-06-02 日本ビクター株式会社 マグネトロンスパッタリング装置
US7059268B2 (en) * 2002-12-20 2006-06-13 Tokyo Electron Limited Method, apparatus and magnet assembly for enhancing and localizing a capacitively coupled plasma
US6864773B2 (en) * 2003-04-04 2005-03-08 Applied Materials, Inc. Variable field magnet apparatus
JP4246547B2 (ja) * 2003-05-23 2009-04-02 株式会社アルバック スパッタリング装置、及びスパッタリング方法
BRPI0516204A (pt) * 2004-09-28 2008-08-26 Oc Oerlikon Balzers Ag processo para produção de substratos revestidos por magnetron e fonte de pulverização por magnetron
US8778144B2 (en) * 2004-09-28 2014-07-15 Oerlikon Advanced Technologies Ag Method for manufacturing magnetron coated substrates and magnetron sputter source
JP2007092136A (ja) 2005-09-29 2007-04-12 Shin Meiwa Ind Co Ltd マグネトロンスパッタリング用の磁石構造体およびカソード電極ユニット並びにマグネトロンスパッタリング装置
US20070080056A1 (en) * 2005-10-07 2007-04-12 German John R Method and apparatus for cylindrical magnetron sputtering using multiple electron drift paths
US20100126848A1 (en) * 2005-10-07 2010-05-27 Tohoku University Magnetron sputtering apparatus
JP2007126722A (ja) * 2005-11-04 2007-05-24 Shin Meiwa Ind Co Ltd マグネトロンスパッタリング装置用の磁石構造体およびカソード電極ユニット並びにマグネトロンスパッタリング装置
KR100748160B1 (ko) * 2005-11-16 2007-08-09 주식회사 에스에프에이 스퍼터링 마그네트론 소스
WO2007068133A1 (en) 2005-12-13 2007-06-21 Oc Oerlikon Balzers Ag Improved sputter target utilization
KR20080085893A (ko) * 2005-12-22 2008-09-24 오씨 외를리콘 발처스 악티엔게젤샤프트 적어도 하나의 스퍼터 코팅된 기판을 제조하는 방법 및스퍼터 소스
JP2007204811A (ja) * 2006-02-01 2007-08-16 Shin Meiwa Ind Co Ltd マグネトロンスパッタリング装置用の磁石構造体およびカソード電極ユニット並びにマグネトロンスパッタリング装置並びに磁石構造体の使用方法
CN101466862A (zh) * 2006-06-08 2009-06-24 芝浦机械电子株式会社 磁控溅射磁体部件、磁控溅射装置和方法
KR101358551B1 (ko) * 2006-08-16 2014-02-05 블라디미르 쉬리포브 유전체 표면의 이온빔 처리 방법 및 이 방법을 구현하는장치
KR101140195B1 (ko) 2007-03-16 2012-05-02 도쿄엘렉트론가부시키가이샤 마그네트론 스퍼터 장치
KR101231261B1 (ko) 2007-03-30 2013-02-07 도쿄엘렉트론가부시키가이샤 회전 마그넷 스퍼터 장치
JP5283084B2 (ja) * 2007-04-06 2013-09-04 国立大学法人東北大学 マグネトロンスパッタ装置
US20080296142A1 (en) * 2007-05-29 2008-12-04 Hien-Minh Huu Le Swinging magnets to improve target utilization
JPWO2009040892A1 (ja) * 2007-09-26 2011-01-13 キヤノンアネルバ株式会社 方向が均一で、かつ方向を変えることができる磁場が生成可能な磁石アセンブリ及びこれを用いたスパッタリング装置
US10043642B2 (en) * 2008-02-01 2018-08-07 Oerlikon Surface Solutions Ag, Pfäffikon Magnetron sputtering source and arrangement with adjustable secondary magnet arrangement
KR101243661B1 (ko) * 2008-03-04 2013-03-14 도쿄엘렉트론가부시키가이샤 회전 마그넷 스퍼터 장치
JP2009299184A (ja) * 2008-05-12 2009-12-24 Canon Anelva Corp 磁場発生装置、磁場発生方法、スパッタ装置及びデバイスの製造方法
US20120064259A1 (en) * 2009-05-15 2012-03-15 Tokyo Electron Limited Rotary magnet sputtering apparatus
WO2011056581A2 (en) 2009-10-26 2011-05-12 General Plasma, Inc. Rotary magnetron magnet bar and apparatus containing the same for high target utilization
JP5386329B2 (ja) * 2009-12-09 2014-01-15 株式会社アルバック マグネトロンスパッタ電極用の磁石ユニット及びスパッタリング装置
WO2011098413A1 (en) 2010-02-10 2011-08-18 Oc Oerlikon Balzers Ag Magnetron source and method of manufacturing
US8919279B1 (en) * 2010-09-30 2014-12-30 WD Media, LLC Processing system having magnet keeper
US20120125766A1 (en) * 2010-11-22 2012-05-24 Zhurin Viacheslav V Magnetron with non-equipotential cathode
JP5792812B2 (ja) * 2011-06-30 2015-10-14 キヤノンアネルバ株式会社 スパッタ装置
US9218945B2 (en) * 2011-12-12 2015-12-22 Apollo Precision Beijing Limited Magnetron with gradually increasing magnetic field out of turnarounds
US20130240147A1 (en) * 2012-03-19 2013-09-19 Sang Ki Nam Methods and apparatus for selectively modulating azimuthal non-uniformity in a plasma processing system
JP5915580B2 (ja) * 2013-03-29 2016-05-11 住友金属鉱山株式会社 マグネトロンスパッタリングカソード及びこれを備えたスパッタリング装置並びに該スパッタリング装置を用いたスパッタリング成膜方法
CN104711529B (zh) * 2015-04-01 2017-09-19 京东方科技集团股份有限公司 一种成膜设备
US10056238B2 (en) 2016-06-27 2018-08-21 Cardinal Cg Company Adjustable return path magnet assembly and methods
US10151023B2 (en) 2016-06-27 2018-12-11 Cardinal Cg Company Laterally adjustable return path magnet assembly and methods
DE102016116568A1 (de) 2016-09-05 2018-03-08 Von Ardenne Gmbh Sputtervorrichtung und -verfahren
EP3619735B1 (de) 2017-05-04 2021-07-07 Cardinal CG Company Sputtering-beschichtungssystem mit einer anpassbaren und flexiblen rückwegmagnetanordnung
BE1026116B1 (nl) * 2018-03-19 2019-10-17 Soleras Advanced Coatings Bvba Regelbare magnetron
KR102102178B1 (ko) * 2018-12-24 2020-04-21 한국기초과학지원연구원 플라즈마 분산 시스템
CN111424246B (zh) * 2020-05-11 2022-11-08 Tcl华星光电技术有限公司 磁石溅射设备

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US4166018A (en) * 1974-01-31 1979-08-28 Airco, Inc. Sputtering process and apparatus
US3956093A (en) * 1974-12-16 1976-05-11 Airco, Inc. Planar magnetron sputtering method and apparatus
DE2707144A1 (de) * 1976-02-19 1977-08-25 Sloan Technology Corp Kathodenzerstaeubungsvorrichtung
US4356073A (en) * 1981-02-12 1982-10-26 Shatterproof Glass Corporation Magnetron cathode sputtering apparatus
JPS57190320A (en) * 1981-05-20 1982-11-22 Toshiba Corp Dry etching method
US4466877A (en) * 1983-10-11 1984-08-21 Shatterproof Glass Corporation Magnetron cathode sputtering apparatus
JPS6134177A (ja) * 1984-07-25 1986-02-18 Tokuda Seisakusho Ltd マグネツト駆動装置
JPS61295368A (ja) * 1985-06-25 1986-12-26 Shinku Kikai Kogyo Kk マグネトロンスパツタ用カソ−ド
JPS61295369A (ja) * 1985-06-25 1986-12-26 Nec Corp スパツタリング装置
JPH0230757A (ja) * 1988-07-19 1990-02-01 Tokyo Electron Ltd マグネトロンスパッタリング方法
JPH04276069A (ja) * 1991-03-04 1992-10-01 Ube Ind Ltd スパッタリング方法およびその装置
DE4107505A1 (de) * 1991-03-08 1992-09-10 Leybold Ag Verfahren zum betrieb einer sputteranlage und vorrichtung zur durchfuehrung des verfahrens

Also Published As

Publication number Publication date
EP0603587A1 (de) 1994-06-29
ATE143528T1 (de) 1996-10-15
JPH06228749A (ja) 1994-08-16
US5399253A (en) 1995-03-21
EP0603587B1 (de) 1996-09-25
JP3566327B2 (ja) 2004-09-15

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Representative=s name: GROSSE, BOCKHORNI, SCHUMACHER, 81476 MUENCHEN

8328 Change in the person/name/address of the agent

Representative=s name: BOCKHORNI & KOLLEGEN, 80687 MUENCHEN

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