DE59610182D1 - Vorrichtung zur herstellung oxidischer dünnschichten - Google Patents

Vorrichtung zur herstellung oxidischer dünnschichten

Info

Publication number
DE59610182D1
DE59610182D1 DE59610182T DE59610182T DE59610182D1 DE 59610182 D1 DE59610182 D1 DE 59610182D1 DE 59610182 T DE59610182 T DE 59610182T DE 59610182 T DE59610182 T DE 59610182T DE 59610182 D1 DE59610182 D1 DE 59610182D1
Authority
DE
Germany
Prior art keywords
thin films
producing oxidic
oxidic thin
producing
films
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE59610182T
Other languages
English (en)
Inventor
Helmut Kinder
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Theva Dunnschichttechnik GmbH
Original Assignee
Theva Dunnschichttechnik GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Theva Dunnschichttechnik GmbH filed Critical Theva Dunnschichttechnik GmbH
Application granted granted Critical
Publication of DE59610182D1 publication Critical patent/DE59610182D1/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C23C14/505—Substrate holders for rotation of the substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/541—Heating or cooling of the substrates
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/12—Substrate holders or susceptors
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68707—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a robot blade, or gripped by a gripper for conveyance
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68771—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting more than one semiconductor substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02T—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO TRANSPORTATION
    • Y02T50/00—Aeronautics or air transport
    • Y02T50/60—Efficient propulsion technologies, e.g. for aircraft

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Robotics (AREA)
  • Inorganic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
DE59610182T 1996-11-01 1996-11-01 Vorrichtung zur herstellung oxidischer dünnschichten Expired - Fee Related DE59610182D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/DE1996/002096 WO1998020521A1 (de) 1996-11-01 1996-11-01 Vorrichtung zur herstellung oxidischer dünnschichten

Publications (1)

Publication Number Publication Date
DE59610182D1 true DE59610182D1 (de) 2003-04-03

Family

ID=6918414

Family Applications (4)

Application Number Title Priority Date Filing Date
DE59610182T Expired - Fee Related DE59610182D1 (de) 1996-11-01 1996-11-01 Vorrichtung zur herstellung oxidischer dünnschichten
DE19680845D Expired - Lifetime DE19680845D2 (de) 1996-11-01 1996-11-01 Vorrichtung zur Herstellung oxidischer Dünnschichten
DE29622857U Expired - Lifetime DE29622857U1 (de) 1996-11-01 1996-11-01 Vorrichtung zur Herstellung oxidischer Dünnschichten
DE19680845A Expired - Fee Related DE19680845C1 (de) 1996-11-01 1996-11-01 Vorrichtung zur Herstellung oxidischer Dünnschichten

Family Applications After (3)

Application Number Title Priority Date Filing Date
DE19680845D Expired - Lifetime DE19680845D2 (de) 1996-11-01 1996-11-01 Vorrichtung zur Herstellung oxidischer Dünnschichten
DE29622857U Expired - Lifetime DE29622857U1 (de) 1996-11-01 1996-11-01 Vorrichtung zur Herstellung oxidischer Dünnschichten
DE19680845A Expired - Fee Related DE19680845C1 (de) 1996-11-01 1996-11-01 Vorrichtung zur Herstellung oxidischer Dünnschichten

Country Status (5)

Country Link
US (1) US6294025B1 (de)
EP (1) EP0873575B1 (de)
JP (1) JP4559543B2 (de)
DE (4) DE59610182D1 (de)
WO (1) WO1998020521A1 (de)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6527866B1 (en) * 2000-02-09 2003-03-04 Conductus, Inc. Apparatus and method for deposition of thin films
WO2002086187A1 (en) * 2001-04-20 2002-10-31 N.V. Bekaert S.A. Apparatus for the deposition of metal or metal oxide coatings
JP2002339064A (ja) * 2001-05-16 2002-11-27 Anelva Corp 真空処理装置
SG149680A1 (en) * 2001-12-12 2009-02-27 Semiconductor Energy Lab Film formation apparatus and film formation method and cleaning method
ITFI20020042A1 (it) * 2002-03-08 2002-06-06 Galileo Vacuum Systems S R L Impianto per la metallizzazione sotto vuoto di oggetti trattati in lotti
DE10248025A1 (de) * 2002-10-15 2004-05-13 THEVA DüNNSCHICHTTECHNIK GMBH Schichtmaterial sowie Verfahren zur Verbesserung der Stromtragfähigkeit von Hochtemperatur-Supraleiter-Dünnschichten
EP1422313A1 (de) 2002-11-05 2004-05-26 Theva Dünnschichttechnik GmbH Vorrichtung und Verfahren zum Aufdampfen eines Beschichtungsmaterials im Vakuum mit kontinuierlicher Materialnachführung
CN1723741B (zh) * 2002-12-12 2012-09-05 株式会社半导体能源研究所 发光装置、制造装置、成膜方法及清洁方法
US7413612B2 (en) * 2003-07-10 2008-08-19 Applied Materials, Inc. In situ substrate holder leveling method and apparatus
US7439208B2 (en) * 2003-12-01 2008-10-21 Superconductor Technologies, Inc. Growth of in-situ thin films by reactive evaporation
JP4002959B2 (ja) * 2004-06-25 2007-11-07 株式会社昭和真空 基板ドーム回転機構
US7572340B2 (en) * 2004-11-29 2009-08-11 Applied Materials, Inc. High resolution substrate holder leveling device and method
GB0706499D0 (en) 2007-04-03 2007-05-09 Angiomed Ag Bendable stent
JP4913695B2 (ja) * 2007-09-20 2012-04-11 東京エレクトロン株式会社 基板処理装置及びそれに用いる基板載置台
SG184626A1 (en) * 2011-03-17 2012-10-30 Sulzer Metco Ag Component manipulator for the dynamic positioning of a substrate, coating method, as well as use of a component manipulator
US8995066B2 (en) * 2011-09-06 2015-03-31 Kla-Tencor Corporation Passive position compensation of a spindle, stage, or component exposed to a heat load
US9564258B2 (en) 2012-02-08 2017-02-07 Superconductor Technologies, Inc. Coated conductor high temperature superconductor carrying high critical current under magnetic field by intrinsic pinning centers, and methods of manufacture of same
US9362025B1 (en) 2012-02-08 2016-06-07 Superconductor Technologies, Inc. Coated conductor high temperature superconductor carrying high critical current under magnetic field by intrinsic pinning centers, and methods of manufacture of same

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4420385A (en) 1983-04-15 1983-12-13 Gryphon Products Apparatus and process for sputter deposition of reacted thin films
JPS61133068A (ja) * 1984-12-03 1986-06-20 Matsushita Electric Ind Co Ltd 光磁気薄膜製造装置およびその製造方法
JPS6421973A (en) * 1987-07-16 1989-01-25 Nissin Electric Co Ltd Device for manufacturing superconductive material
JP2547784B2 (ja) * 1987-08-22 1996-10-23 住友電気工業株式会社 超電導薄膜の形成方法
JP2623715B2 (ja) * 1988-07-05 1997-06-25 三菱電機株式会社 薄膜形成装置
JPH01192720A (ja) * 1988-01-27 1989-08-02 Fujitsu Ltd 超伝導薄膜の形成方法
JPH02275716A (ja) * 1988-12-27 1990-11-09 Fuji Electric Co Ltd 酸化物超電導体薄膜の製造方法
CA2029038C (en) * 1989-10-31 1993-12-14 Keizo Harada Process and system for preparing a superconducting thin film of oxide
US5155336A (en) * 1990-01-19 1992-10-13 Applied Materials, Inc. Rapid thermal heating apparatus and method
US5260106A (en) * 1990-08-03 1993-11-09 Fujitsu Limited Method for forming diamond films by plasma jet CVD
JPH04129133A (ja) * 1990-09-20 1992-04-30 Hitachi Ltd イオン源及びプラズマ装置
US5204145A (en) * 1991-03-04 1993-04-20 General Electric Company Apparatus for producing diamonds by chemical vapor deposition and articles produced therefrom
DE4125877C2 (de) * 1991-08-05 1994-12-22 Forschungszentrum Juelich Gmbh Aufnahmevorrichtung für über einen Transfermechanismus in eine Apparatur einzubringende Proben
JPH069297A (ja) * 1991-12-09 1994-01-18 Sumitomo Electric Ind Ltd 成膜装置
JPH06101020A (ja) 1992-09-21 1994-04-12 Mitsubishi Electric Corp 薄膜形成方法
JPH0810678B2 (ja) * 1992-10-27 1996-01-31 株式会社半導体プロセス研究所 半導体装置の製造装置
JP3265042B2 (ja) * 1993-03-18 2002-03-11 東京エレクトロン株式会社 成膜方法
US5482602A (en) * 1993-11-04 1996-01-09 United Technologies Corporation Broad-beam ion deposition coating methods for depositing diamond-like-carbon coatings on dynamic surfaces
US5755511A (en) * 1994-12-19 1998-05-26 Applied Materials, Inc. Method and apparatus for measuring substrate temperatures
US5679404A (en) * 1995-06-07 1997-10-21 Saint-Gobain/Norton Industrial Ceramics Corporation Method for depositing a substance with temperature control
US5860555A (en) * 1995-06-07 1999-01-19 Mayled; Edward C. Storage and shipping container
DE19622322C2 (de) * 1995-06-15 1999-02-25 Toshiba Ceramics Co Vorrichtung zum Züchten aus der Dampfphase
US5753934A (en) * 1995-08-04 1998-05-19 Tok Corporation Multilayer thin film, substrate for electronic device, electronic device, and preparation of multilayer oxide thin film
US6113702A (en) * 1995-09-01 2000-09-05 Asm America, Inc. Wafer support system
US5781693A (en) * 1996-07-24 1998-07-14 Applied Materials, Inc. Gas introduction showerhead for an RTP chamber with upper and lower transparent plates and gas flow therebetween
US6123766A (en) * 1997-05-16 2000-09-26 Applied Materials, Inc. Method and apparatus for achieving temperature uniformity of a substrate

Also Published As

Publication number Publication date
US6294025B1 (en) 2001-09-25
DE19680845C1 (de) 2002-06-06
EP0873575A1 (de) 1998-10-28
DE19680845D2 (de) 1999-03-18
JP4559543B2 (ja) 2010-10-06
DE29622857U1 (de) 1997-07-17
EP0873575B1 (de) 2003-02-26
WO1998020521A1 (de) 1998-05-14
JP2000503351A (ja) 2000-03-21

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee