DE59814474D1 - Verfahren zum Herstellen einer Mehrzahl von Halbleiterlasern - Google Patents
Verfahren zum Herstellen einer Mehrzahl von HalbleiterlasernInfo
- Publication number
- DE59814474D1 DE59814474D1 DE59814474T DE59814474T DE59814474D1 DE 59814474 D1 DE59814474 D1 DE 59814474D1 DE 59814474 T DE59814474 T DE 59814474T DE 59814474 T DE59814474 T DE 59814474T DE 59814474 D1 DE59814474 D1 DE 59814474D1
- Authority
- DE
- Germany
- Prior art keywords
- producing
- semiconductor lasers
- lasers
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Led Devices (AREA)
- Semiconductor Lasers (AREA)
- Drying Of Semiconductors (AREA)
- Weting (AREA)
- Physical Vapour Deposition (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE59814474T DE59814474D1 (de) | 1997-09-19 | 1998-09-18 | Verfahren zum Herstellen einer Mehrzahl von Halbleiterlasern |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE1997141442 DE19741442A1 (de) | 1997-09-19 | 1997-09-19 | Verfahren zum Herstellen einer Halbleitervorrichtung |
DE1998138810 DE19838810B4 (de) | 1998-08-26 | 1998-08-26 | Verfahren zum Herstellen einer Mehrzahl von Ga(In,Al)N-Leuchtdiodenchips |
DE59814474T DE59814474D1 (de) | 1997-09-19 | 1998-09-18 | Verfahren zum Herstellen einer Mehrzahl von Halbleiterlasern |
Publications (1)
Publication Number | Publication Date |
---|---|
DE59814474D1 true DE59814474D1 (de) | 2010-12-16 |
Family
ID=26040146
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE59814474T Expired - Lifetime DE59814474D1 (de) | 1997-09-19 | 1998-09-18 | Verfahren zum Herstellen einer Mehrzahl von Halbleiterlasern |
Country Status (6)
Country | Link |
---|---|
US (1) | US6100104A (de) |
EP (1) | EP0903792B1 (de) |
JP (1) | JPH11154648A (de) |
CN (1) | CN1218997A (de) |
DE (1) | DE59814474D1 (de) |
TW (1) | TW393785B (de) |
Families Citing this family (65)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19838810B4 (de) * | 1998-08-26 | 2006-02-09 | Osram Opto Semiconductors Gmbh | Verfahren zum Herstellen einer Mehrzahl von Ga(In,Al)N-Leuchtdiodenchips |
FR2769924B1 (fr) * | 1997-10-20 | 2000-03-10 | Centre Nat Rech Scient | Procede de realisation d'une couche epitaxiale de nitrure de gallium, couche epitaxiale de nitrure de gallium et composant optoelectronique muni d'une telle couche |
US6051849A (en) | 1998-02-27 | 2000-04-18 | North Carolina State University | Gallium nitride semiconductor structures including a lateral gallium nitride layer that extends from an underlying gallium nitride layer |
US6608327B1 (en) | 1998-02-27 | 2003-08-19 | North Carolina State University | Gallium nitride semiconductor structure including laterally offset patterned layers |
US6265289B1 (en) * | 1998-06-10 | 2001-07-24 | North Carolina State University | Methods of fabricating gallium nitride semiconductor layers by lateral growth from sidewalls into trenches, and gallium nitride semiconductor structures fabricated thereby |
US6255198B1 (en) | 1998-11-24 | 2001-07-03 | North Carolina State University | Methods of fabricating gallium nitride microelectronic layers on silicon layers and gallium nitride microelectronic structures formed thereby |
US6177688B1 (en) | 1998-11-24 | 2001-01-23 | North Carolina State University | Pendeoepitaxial gallium nitride semiconductor layers on silcon carbide substrates |
US20010042866A1 (en) * | 1999-02-05 | 2001-11-22 | Carrie Carter Coman | Inxalygazn optical emitters fabricated via substrate removal |
US7004644B1 (en) * | 1999-06-29 | 2006-02-28 | Finisar Corporation | Hermetic chip-scale package for photonic devices |
US6265322B1 (en) * | 1999-09-21 | 2001-07-24 | Agere Systems Guardian Corp. | Selective growth process for group III-nitride-based semiconductors |
US6521514B1 (en) * | 1999-11-17 | 2003-02-18 | North Carolina State University | Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on sapphire substrates |
US6380108B1 (en) | 1999-12-21 | 2002-04-30 | North Carolina State University | Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on weak posts, and gallium nitride semiconductor structures fabricated thereby |
US6403451B1 (en) | 2000-02-09 | 2002-06-11 | Noerh Carolina State University | Methods of fabricating gallium nitride semiconductor layers on substrates including non-gallium nitride posts |
US6261929B1 (en) * | 2000-02-24 | 2001-07-17 | North Carolina State University | Methods of forming a plurality of semiconductor layers using spaced trench arrays |
JP2001303020A (ja) * | 2000-04-24 | 2001-10-31 | Sunstar Inc | 透明液状組成物 |
JP5523277B2 (ja) * | 2000-04-26 | 2014-06-18 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング | 発光半導体素子並びに発光性半導体素子の製造方法 |
CN1292494C (zh) | 2000-04-26 | 2006-12-27 | 奥斯兰姆奥普托半导体有限责任公司 | 发光半导体元件及其制造方法 |
DE10051465A1 (de) * | 2000-10-17 | 2002-05-02 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines Halbleiterbauelements auf GaN-Basis |
EP1277241B1 (de) | 2000-04-26 | 2017-12-13 | OSRAM Opto Semiconductors GmbH | Lumineszenzdiodenchip auf der basis von gan |
TWI292227B (en) * | 2000-05-26 | 2008-01-01 | Osram Opto Semiconductors Gmbh | Light-emitting-dioed-chip with a light-emitting-epitaxy-layer-series based on gan |
US6867539B1 (en) * | 2000-07-12 | 2005-03-15 | 3M Innovative Properties Company | Encapsulated organic electronic devices and method for making same |
JP3906653B2 (ja) * | 2000-07-18 | 2007-04-18 | ソニー株式会社 | 画像表示装置及びその製造方法 |
US6334971B1 (en) * | 2000-07-20 | 2002-01-01 | Wen-Ping Huang | Manufacturing method for diode group processed by injection molding on the surface |
US6518079B2 (en) * | 2000-12-20 | 2003-02-11 | Lumileds Lighting, U.S., Llc | Separation method for gallium nitride devices on lattice-mismatched substrates |
JP2002261327A (ja) | 2001-03-06 | 2002-09-13 | Sony Corp | 半導体発光素子及び半導体発光素子の製造方法 |
US6610554B2 (en) * | 2001-04-18 | 2003-08-26 | Hyung Se Kim | Method of fabricating organic electroluminescent display |
US20040029365A1 (en) * | 2001-05-07 | 2004-02-12 | Linthicum Kevin J. | Methods of fabricating gallium nitride microelectronic layers on silicon layers and gallium nitride microelectronic structures formed thereby |
US8294172B2 (en) | 2002-04-09 | 2012-10-23 | Lg Electronics Inc. | Method of fabricating vertical devices using a metal support film |
US20030189215A1 (en) * | 2002-04-09 | 2003-10-09 | Jong-Lam Lee | Method of fabricating vertical structure leds |
US6841802B2 (en) * | 2002-06-26 | 2005-01-11 | Oriol, Inc. | Thin film light emitting diode |
WO2004006393A2 (en) * | 2002-07-06 | 2004-01-15 | Optical Communication Products, Inc. | Method of self-aligning an oxide aperture with an annular intra-cavity contact in a long wavelength vcsel |
KR100495215B1 (ko) * | 2002-12-27 | 2005-06-14 | 삼성전기주식회사 | 수직구조 갈륨나이트라이드 발광다이오드 및 그 제조방법 |
KR100483049B1 (ko) * | 2003-06-03 | 2005-04-15 | 삼성전기주식회사 | 수직구조 질화갈륨계 발광다이오드의 제조방법 |
DE10335081A1 (de) * | 2003-07-31 | 2005-03-03 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung einer Vielzahl von optoelektronischen Halbleiterchips und optoeleketronischer Halbleiterchip |
DE10335080A1 (de) * | 2003-07-31 | 2005-03-03 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung einer Vielzahl von optoelektronischen Halbleiterchips und optoelektronischer Halbleiterchip |
JP4049723B2 (ja) * | 2003-09-04 | 2008-02-20 | 沖電気工業株式会社 | 窒化物半導体素子の製造方法及び窒化物半導体素子の製造装置 |
US7355284B2 (en) * | 2004-03-29 | 2008-04-08 | Cree, Inc. | Semiconductor light emitting devices including flexible film having therein an optical element |
US7259402B2 (en) * | 2004-09-22 | 2007-08-21 | Cree, Inc. | High efficiency group III nitride-silicon carbide light emitting diode |
US8513686B2 (en) * | 2004-09-22 | 2013-08-20 | Cree, Inc. | High output small area group III nitride LEDs |
US7737459B2 (en) * | 2004-09-22 | 2010-06-15 | Cree, Inc. | High output group III nitride light emitting diodes |
US8174037B2 (en) | 2004-09-22 | 2012-05-08 | Cree, Inc. | High efficiency group III nitride LED with lenticular surface |
US8288942B2 (en) | 2004-12-28 | 2012-10-16 | Cree, Inc. | High efficacy white LED |
US8901699B2 (en) | 2005-05-11 | 2014-12-02 | Cree, Inc. | Silicon carbide junction barrier Schottky diodes with suppressed minority carrier injection |
JP2006339418A (ja) * | 2005-06-02 | 2006-12-14 | Seiko Epson Corp | 光素子及びその製造方法 |
US8168000B2 (en) | 2005-06-15 | 2012-05-01 | International Rectifier Corporation | III-nitride semiconductor device fabrication |
US20070049048A1 (en) * | 2005-08-31 | 2007-03-01 | Shahid Rauf | Method and apparatus for improving nitrogen profile during plasma nitridation |
US7939351B2 (en) | 2005-09-16 | 2011-05-10 | Showa Denko K.K. | Production method for nitride semiconductor light emitting device |
EP2029936B1 (de) | 2006-05-31 | 2015-07-29 | Cree, Inc. | Beleuchtungsvorrichtung und beleuchtungsverfahren |
JP4997502B2 (ja) * | 2006-09-20 | 2012-08-08 | 国立大学法人東北大学 | 半導体素子の製造方法 |
US20080187018A1 (en) * | 2006-10-19 | 2008-08-07 | Amberwave Systems Corporation | Distributed feedback lasers formed via aspect ratio trapping |
JP2009032971A (ja) * | 2007-07-27 | 2009-02-12 | Rohm Co Ltd | 窒化物半導体素子の製造方法 |
CN101465319B (zh) * | 2007-12-17 | 2010-11-03 | 洲磊曜富科技股份有限公司 | 形成发光二极管元件的方法 |
DE102009024311A1 (de) * | 2009-06-05 | 2011-01-05 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Halbleiterbauelement und Verfahren zu seiner Herstellung |
DE102009035429A1 (de) * | 2009-07-31 | 2011-02-03 | Osram Opto Semiconductors Gmbh | Leuchtdiodenchip |
DE102010012423A1 (de) * | 2009-12-21 | 2011-06-22 | OSRAM Opto Semiconductors GmbH, 93055 | Lumineszenzdiodenanordnung, Hinterleuchtungsvorrichtung und Anzeigevorrichtung |
CN101950783A (zh) * | 2010-08-23 | 2011-01-19 | 厦门市三安光电科技有限公司 | 氮化镓基高亮度发光二极管芯片的制作工艺 |
CN102456788B (zh) * | 2010-10-20 | 2014-08-27 | 展晶科技(深圳)有限公司 | 发光二极管及其制造方法 |
CN102456778B (zh) * | 2010-10-26 | 2014-11-05 | 展晶科技(深圳)有限公司 | 发光二极管芯片制造方法 |
CN102130230A (zh) * | 2010-12-28 | 2011-07-20 | 中国科学院半导体研究所 | 发光二极管的制备方法 |
CN105720136B (zh) * | 2014-12-02 | 2019-04-05 | 无锡极目科技有限公司 | 在复合玻璃基板上制造视频显示板用多色led的方法 |
US10186833B2 (en) * | 2015-02-18 | 2019-01-22 | Ii-Vi Incorporated | Densely-spaced laser diode configurations |
TW201933625A (zh) * | 2018-01-19 | 2019-08-16 | 晶元光電股份有限公司 | 發光元件及其製造方法 |
CN111326948B (zh) * | 2018-12-15 | 2023-04-07 | 深圳市中光工业技术研究院 | 激光器芯片的制备方法 |
CN110690106A (zh) * | 2019-10-22 | 2020-01-14 | 北京大学东莞光电研究院 | 一种单晶金刚石芯片的制备方法 |
CN114373835A (zh) * | 2021-12-24 | 2022-04-19 | 季华实验室 | 微显示芯片阵列的制作方法 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5013682A (en) * | 1986-10-22 | 1991-05-07 | Texas Instruments Incorporated | Method for selective epitaxy using a WSI mask |
JPH02260416A (ja) * | 1989-03-31 | 1990-10-23 | Toshiba Corp | 半導体装置の製造方法 |
JP2943510B2 (ja) * | 1991-08-09 | 1999-08-30 | 日本電気株式会社 | 可変波長半導体レーザ装置 |
JPH05251738A (ja) * | 1992-03-05 | 1993-09-28 | Fujitsu Ltd | 半導体光素子アレイの作製方法 |
US5578839A (en) * | 1992-11-20 | 1996-11-26 | Nichia Chemical Industries, Ltd. | Light-emitting gallium nitride-based compound semiconductor device |
EP0599244B1 (de) * | 1992-11-27 | 1999-04-14 | Denso Corporation | Tragbares elektronisches Gerät |
JP2748354B2 (ja) * | 1993-10-21 | 1998-05-06 | 日亜化学工業株式会社 | 窒化ガリウム系化合物半導体チップの製造方法 |
US5478774A (en) * | 1994-06-15 | 1995-12-26 | Motorola | Method of fabricating patterned-mirror VCSELs using selective growth |
JP3246207B2 (ja) * | 1994-08-04 | 2002-01-15 | 松下電器産業株式会社 | 半導体レーザの製造方法 |
JPH08316582A (ja) * | 1995-05-19 | 1996-11-29 | Nec Corp | 半導体レーザ |
JPH0945987A (ja) * | 1995-07-31 | 1997-02-14 | Hitachi Ltd | 半導体レーザ素子 |
-
1998
- 1998-09-15 TW TW087115349A patent/TW393785B/zh not_active IP Right Cessation
- 1998-09-18 EP EP98117796A patent/EP0903792B1/de not_active Expired - Lifetime
- 1998-09-18 DE DE59814474T patent/DE59814474D1/de not_active Expired - Lifetime
- 1998-09-19 CN CN98124519.6A patent/CN1218997A/zh active Pending
- 1998-09-21 JP JP26681998A patent/JPH11154648A/ja active Pending
- 1998-09-21 US US09/157,649 patent/US6100104A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
CN1218997A (zh) | 1999-06-09 |
EP0903792A3 (de) | 2000-03-22 |
TW393785B (en) | 2000-06-11 |
EP0903792A2 (de) | 1999-03-24 |
EP0903792B1 (de) | 2010-11-03 |
US6100104A (en) | 2000-08-08 |
JPH11154648A (ja) | 1999-06-08 |
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