DE60012005D1 - Verfahren und vorrichtung zur trocknung eines substrats - Google Patents

Verfahren und vorrichtung zur trocknung eines substrats

Info

Publication number
DE60012005D1
DE60012005D1 DE60012005T DE60012005T DE60012005D1 DE 60012005 D1 DE60012005 D1 DE 60012005D1 DE 60012005 T DE60012005 T DE 60012005T DE 60012005 T DE60012005 T DE 60012005T DE 60012005 D1 DE60012005 D1 DE 60012005D1
Authority
DE
Germany
Prior art keywords
drying
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE60012005T
Other languages
English (en)
Other versions
DE60012005T2 (de
Inventor
Norio Maeda
Koji Sumi
Hiroshi Aihara
Masao Oono
Takao Matsumoto
Naoaki Izutani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Daikin Industries Ltd
Toho Kasei Co Ltd
Original Assignee
Daikin Industries Ltd
Toho Kasei Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Daikin Industries Ltd, Toho Kasei Co Ltd filed Critical Daikin Industries Ltd
Publication of DE60012005D1 publication Critical patent/DE60012005D1/de
Application granted granted Critical
Publication of DE60012005T2 publication Critical patent/DE60012005T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304Mechanical treatment, e.g. grinding, polishing, cutting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67028Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S134/00Cleaning and liquid contact with solids
    • Y10S134/902Semiconductor wafer
DE60012005T 2000-01-17 2000-01-17 Verfahren und vorrichtung zur trocknung eines substrats Expired - Fee Related DE60012005T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2000/000175 WO2001053766A1 (fr) 2000-01-17 2000-01-17 Procede et dispositif pour secher un substrat

Publications (2)

Publication Number Publication Date
DE60012005D1 true DE60012005D1 (de) 2004-08-12
DE60012005T2 DE60012005T2 (de) 2005-07-14

Family

ID=11735580

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60012005T Expired - Fee Related DE60012005T2 (de) 2000-01-17 2000-01-17 Verfahren und vorrichtung zur trocknung eines substrats

Country Status (5)

Country Link
US (1) US7377053B1 (de)
EP (1) EP1170564B1 (de)
KR (1) KR100592997B1 (de)
DE (1) DE60012005T2 (de)
WO (1) WO2001053766A1 (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100481309B1 (ko) 2002-06-27 2005-04-07 삼성전자주식회사 반도체 기판의 건조장비
KR100636035B1 (ko) * 2003-11-08 2006-10-18 삼성전자주식회사 웨이퍼를 건조하기 위한 방법 및 장치, 그리고 웨이퍼 건조 장치를 포함하는 웨이퍼 처리 장치
JP4758846B2 (ja) * 2005-11-18 2011-08-31 東京エレクトロン株式会社 乾燥装置、乾燥方法、及び乾燥プログラム、並びに、これらを有する基板処理装置、基板処理方法、及び基板処理プログラム
JP4527670B2 (ja) * 2006-01-25 2010-08-18 東京エレクトロン株式会社 加熱処理装置、加熱処理方法、制御プログラムおよびコンピュータ読取可能な記憶媒体
JP6568838B2 (ja) * 2016-10-18 2019-08-28 上村工業株式会社 乾燥装置

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59156995A (ja) * 1983-02-23 1984-09-06 Fujitsu Ltd 液相エピタキシヤル装置
US4816081A (en) * 1987-02-17 1989-03-28 Fsi Corporation Apparatus and process for static drying of substrates
JPH06103686B2 (ja) 1989-11-24 1994-12-14 シー エフ エム テクノロジーズ,インコーポレイテッド 表面乾燥処理方法および装置
US5488964A (en) * 1991-05-08 1996-02-06 Tokyo Electron Limited Washing apparatus, and washing method
US6123900A (en) * 1993-10-28 2000-09-26 Vellutato; Arthur L. Method of sterilization
US5772784A (en) * 1994-11-14 1998-06-30 Yieldup International Ultra-low particle semiconductor cleaner
US5968285A (en) * 1995-06-07 1999-10-19 Gary W. Ferrell Methods for drying and cleaning of objects using aerosols and inert gases
US5964958A (en) 1995-06-07 1999-10-12 Gary W. Ferrell Methods for drying and cleaning objects using aerosols
US5653045A (en) * 1995-06-07 1997-08-05 Ferrell; Gary W. Method and apparatus for drying parts and microelectronic components using sonic created mist
US5685086A (en) * 1995-06-07 1997-11-11 Ferrell; Gary W. Method and apparatus for drying objects using aerosols
US5954911A (en) * 1995-10-12 1999-09-21 Semitool, Inc. Semiconductor processing using vapor mixtures
JPH09213672A (ja) * 1996-01-30 1997-08-15 Nec Yamaguchi Ltd 半導体ウェハ処理装置および処理方法
IL126189A (en) * 1996-03-14 2001-08-08 All In One Microservice Inc Method and device for drying and cleaning objects using aerosol
US6004399A (en) * 1996-07-01 1999-12-21 Cypress Semiconductor Corporation Ultra-low particle semiconductor cleaner for removal of particle contamination and residues from surface oxide formation on semiconductor wafers
JPH10189517A (ja) 1996-12-20 1998-07-21 Oki Electric Ind Co Ltd 基板洗浄方法及びその装置
JP3171807B2 (ja) * 1997-01-24 2001-06-04 東京エレクトロン株式会社 洗浄装置及び洗浄方法
TW402737B (en) * 1997-05-27 2000-08-21 Tokyo Electron Ltd Cleaning/drying device and method
JPH10335299A (ja) * 1997-06-05 1998-12-18 Sony Corp ウェーハ乾燥装置
JPH1126423A (ja) * 1997-07-09 1999-01-29 Sugai:Kk 半導体ウエハ等の処理方法並びにその処理装置
JPH11176798A (ja) * 1997-12-08 1999-07-02 Toshiba Corp 基板洗浄・乾燥装置及び方法
JPH11176796A (ja) * 1997-12-16 1999-07-02 Sony Corp ウェーハ処理方法及び装置
JPH11345798A (ja) * 1998-06-01 1999-12-14 Daikin Ind Ltd 被洗浄体処理方法およびその装置
JP2000012505A (ja) * 1998-06-17 2000-01-14 Dainippon Screen Mfg Co Ltd 基板処理方法及びその装置
US6216709B1 (en) * 1998-09-04 2001-04-17 Komag, Inc. Method for drying a substrate
TW442836B (en) * 1998-11-24 2001-06-23 Toho Kasei Co Ltd Wafer drying device and method
JP3448613B2 (ja) * 1999-06-29 2003-09-22 オメガセミコン電子株式会社 乾燥装置

Also Published As

Publication number Publication date
EP1170564A4 (de) 2002-06-05
US7377053B1 (en) 2008-05-27
KR100592997B1 (ko) 2006-06-23
EP1170564A1 (de) 2002-01-09
KR20010112344A (ko) 2001-12-20
EP1170564B1 (de) 2004-07-07
WO2001053766A1 (fr) 2001-07-26
DE60012005T2 (de) 2005-07-14

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee