DE60015770D1 - Flashspeicheranordnung mit externausgelöster erfassung und heilung von fehlerhaften zellen - Google Patents

Flashspeicheranordnung mit externausgelöster erfassung und heilung von fehlerhaften zellen

Info

Publication number
DE60015770D1
DE60015770D1 DE60015770T DE60015770T DE60015770D1 DE 60015770 D1 DE60015770 D1 DE 60015770D1 DE 60015770 T DE60015770 T DE 60015770T DE 60015770 T DE60015770 T DE 60015770T DE 60015770 D1 DE60015770 D1 DE 60015770D1
Authority
DE
Germany
Prior art keywords
memory device
flash memory
signals
flash
cells
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60015770T
Other languages
English (en)
Other versions
DE60015770T2 (de
Inventor
J Chevallier
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Micron Technology Inc
Original Assignee
Micron Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micron Technology Inc filed Critical Micron Technology Inc
Application granted granted Critical
Publication of DE60015770D1 publication Critical patent/DE60015770D1/de
Publication of DE60015770T2 publication Critical patent/DE60015770T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data
    • G11C16/3431—Circuits or methods to detect disturbed nonvolatile memory cells, e.g. which still read as programmed but with threshold less than the program verify threshold or read as erased but with threshold greater than the erase verify threshold, and to reverse the disturbance via a refreshing programming or erasing step
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data
DE60015770T 1999-08-23 2000-08-23 Flashspeicheranordnung mit extern ausgelöster erfassung und heilung von fehlerhaften zellen Expired - Lifetime DE60015770T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US37915599A 1999-08-23 1999-08-23
US379155 1999-08-23
PCT/US2000/023138 WO2001015172A2 (en) 1999-08-23 2000-08-23 Flash memory with externally triggered detection and repair of leaky cells

Publications (2)

Publication Number Publication Date
DE60015770D1 true DE60015770D1 (de) 2004-12-16
DE60015770T2 DE60015770T2 (de) 2005-12-08

Family

ID=23496045

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60015770T Expired - Lifetime DE60015770T2 (de) 1999-08-23 2000-08-23 Flashspeicheranordnung mit extern ausgelöster erfassung und heilung von fehlerhaften zellen

Country Status (8)

Country Link
US (1) US6813183B2 (de)
EP (1) EP1206775B1 (de)
JP (1) JP3653248B2 (de)
KR (1) KR100487031B1 (de)
AT (1) ATE282239T1 (de)
AU (1) AU6929300A (de)
DE (1) DE60015770T2 (de)
WO (1) WO2001015172A2 (de)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7057935B2 (en) * 2001-08-30 2006-06-06 Micron Technology, Inc. Erase verify for non-volatile memory
EP1424700B1 (de) 2002-11-28 2005-08-03 STMicroelectronics S.r.l. Einzelzelllöschverfahren der Rückgewinnung von progammiergestörte Zellen in nichtflüchtige Speichervorrichtung
US6925011B2 (en) * 2002-12-26 2005-08-02 Micron Technology, Inc. Programming flash memories
US20040209309A1 (en) * 2003-02-27 2004-10-21 Muldoon Mark Thomas Compositions and methods for the specific detection of mammalian muscle proteins
EP1453062B1 (de) * 2003-02-27 2006-06-28 STMicroelectronics S.r.l. Eingebautes Testverfahren in einem Flash Speicher
KR100830580B1 (ko) * 2006-10-20 2008-05-21 삼성전자주식회사 플래시 메모리 장치를 포함한 메모리 시스템의 데이터 복원방법
US7944747B2 (en) 2008-03-17 2011-05-17 Samsung Electronics Co., Ltd. Flash memory device and method for programming flash memory device having leakage bit lines
JP5422984B2 (ja) 2008-12-08 2014-02-19 富士通株式会社 不揮発性メモリ、メモリ制御装置、メモリ制御システムおよび不揮発性メモリの制御方法
JP5549956B2 (ja) 2009-12-02 2014-07-16 マイクロン テクノロジー， インク． 不揮発性メモリ用のリフレッシュアーキテクチャおよびアルゴリズム
JP6084520B2 (ja) * 2013-06-13 2017-02-22 サイプレス セミコンダクター コーポレーション 半導体メモリおよび半導体メモリの試験方法
KR102252692B1 (ko) 2014-07-15 2021-05-17 삼성전자주식회사 누설 전류 감지 장치 및 이를 포함하는 비휘발성 메모리 장치
US9330783B1 (en) 2014-12-17 2016-05-03 Apple Inc. Identifying word-line-to-substrate and word-line-to-word-line short-circuit events in a memory block
US9390809B1 (en) 2015-02-10 2016-07-12 Apple Inc. Data storage in a memory block following WL-WL short
US9529663B1 (en) 2015-12-20 2016-12-27 Apple Inc. Detection and localization of failures in 3D NAND flash memory
US9996417B2 (en) 2016-04-12 2018-06-12 Apple Inc. Data recovery in memory having multiple failure modes
US9711227B1 (en) 2016-04-28 2017-07-18 Sandisk Technologies Llc Non-volatile memory with in field failure prediction using leakage detection
US10446246B2 (en) 2018-03-14 2019-10-15 Silicon Storage Technology, Inc. Method and apparatus for data refresh for analog non-volatile memory in deep learning neural network
US10755787B2 (en) 2018-06-28 2020-08-25 Apple Inc. Efficient post programming verification in a nonvolatile memory
US10762967B2 (en) 2018-06-28 2020-09-01 Apple Inc. Recovering from failure in programming a nonvolatile memory
US10936455B2 (en) 2019-02-11 2021-03-02 Apple Inc. Recovery of data failing due to impairment whose severity depends on bit-significance value
US10915394B1 (en) 2019-09-22 2021-02-09 Apple Inc. Schemes for protecting data in NVM device using small storage footprint
US11550657B1 (en) 2021-09-01 2023-01-10 Apple Inc. Efficient programming schemes in a nonvolatile memory

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4719598A (en) * 1985-05-31 1988-01-12 Harris Corporation Bit addressable programming arrangement
US5161159A (en) * 1990-08-17 1992-11-03 Sgs-Thomson Microelectronics, Inc. Semiconductor memory with multiple clocking for test mode entry
US5526364A (en) 1995-02-10 1996-06-11 Micron Quantum Devices, Inc. Apparatus for entering and executing test mode operations for memory
US5682496A (en) * 1995-02-10 1997-10-28 Micron Quantum Devices, Inc. Filtered serial event controlled command port for memory
US5723990A (en) 1995-06-21 1998-03-03 Micron Quantum Devices, Inc. Integrated circuit having high voltage detection circuit
US5751944A (en) 1995-07-28 1998-05-12 Micron Quantum Devices, Inc. Non-volatile memory system having automatic cycling test function
US5619453A (en) 1995-07-28 1997-04-08 Micron Quantum Devices, Inc. Memory system having programmable flow control register
US5619461A (en) 1995-07-28 1997-04-08 Micron Quantum Devices, Inc. Memory system having internal state monitoring circuit
US5790459A (en) 1995-08-04 1998-08-04 Micron Quantum Devices, Inc. Memory circuit for performing threshold voltage tests on cells of a memory array
US5675540A (en) 1996-01-22 1997-10-07 Micron Quantum Devices, Inc. Non-volatile memory system having internal data verification test mode
US5793775A (en) 1996-01-26 1998-08-11 Micron Quantum Devices, Inc. Low voltage test mode operation enable scheme with hardware safeguard
FR2745114B1 (fr) * 1996-02-20 1998-04-17 Sgs Thomson Microelectronics Memoire non volatile multiniveau modifiable electriquement avec rafraichissement autonome
JP3596989B2 (ja) * 1996-10-03 2004-12-02 邦博 浅田 半導体記憶装置
JP2914346B2 (ja) * 1997-05-29 1999-06-28 日本電気株式会社 半導体装置
US6496027B1 (en) * 1997-08-21 2002-12-17 Micron Technology, Inc. System for testing integrated circuit devices
US5909449A (en) 1997-09-08 1999-06-01 Invox Technology Multibit-per-cell non-volatile memory with error detection and correction
US6115291A (en) 1998-12-29 2000-09-05 Micron Technology, Inc. Healing cells in a memory device
US6108241A (en) 1999-07-01 2000-08-22 Micron Technology, Inc. Leakage detection in flash memory cell

Also Published As

Publication number Publication date
KR20030009288A (ko) 2003-01-29
EP1206775B1 (de) 2004-11-10
US6813183B2 (en) 2004-11-02
DE60015770T2 (de) 2005-12-08
WO2001015172A2 (en) 2001-03-01
WO2001015172A3 (en) 2001-09-20
AU6929300A (en) 2001-03-19
EP1206775A2 (de) 2002-05-22
JP3653248B2 (ja) 2005-05-25
ATE282239T1 (de) 2004-11-15
KR100487031B1 (ko) 2005-05-03
JP2003507840A (ja) 2003-02-25
US20020191440A1 (en) 2002-12-19

Similar Documents

Publication Publication Date Title
DE60015770D1 (de) Flashspeicheranordnung mit externausgelöster erfassung und heilung von fehlerhaften zellen
US9514849B2 (en) Semiconductor memory device including controller and fuse circuits for performing repair operation
KR950009735A (ko) 불휘발성 반도체 기억장치
ATE478422T1 (de) Speicherblocklöschung in einer flash-speicher- vorrichtung
KR960025799A (ko) 반도체 메모리장치의 결함 셀 구제회로 및 방법
GB2351822A (en) Memory system
KR102253011B1 (ko) 리페어 회로 및 이를 포함하는 반도체 메모리 장치
US10761969B2 (en) Nonvolatile memory device and operation method thereof
US20110087824A1 (en) Flash memory accessing apparatus and method thereof
US20160293243A1 (en) Semiconductor memory device
US11125816B2 (en) Method of testing memory device employing limited number of test pins and memory device utilizing same
ATE421758T1 (de) Dateneinschreibeverfahren für flash-speicher
KR970003248A (ko) 플래쉬 메모리소자의 소거방법
CN101399079B (zh) 半导体存储器件及其驱动方法
US20120092947A1 (en) Fuse circuit and memory device including the same
TW200605088A (en) Apparatus and method for testing semiconductor memory device
US7830741B2 (en) Semiconductor memory device for controlling banks
US20100128540A1 (en) Semiconductor memory apparatus and test circuit therefor
JP4920680B2 (ja) エラー注入によるアタックに対してメモリを保護する装置
KR102166524B1 (ko) 반도체장치 및 반도체시스템
EP2207100A1 (de) System und Verfahren zur Datenwiederherstellung bei einer deaktivierten integrierten Schaltung
TW200519594A (en) Method for determining program code
JP2003187591A5 (de)
CN104282343A (zh) 半导体系统及其修复方法
DE60212103D1 (de) Strukturierter speicherzellentest

Legal Events

Date Code Title Description
8364 No opposition during term of opposition