DE60024424D1 - Halbleiter-wafer etwicklungsgerät mit vertikal gestapelteentwicklungsraüme und einachsiges dual-wafer transfer system - Google Patents
Halbleiter-wafer etwicklungsgerät mit vertikal gestapelteentwicklungsraüme und einachsiges dual-wafer transfer systemInfo
- Publication number
- DE60024424D1 DE60024424D1 DE60024424T DE60024424T DE60024424D1 DE 60024424 D1 DE60024424 D1 DE 60024424D1 DE 60024424 T DE60024424 T DE 60024424T DE 60024424 T DE60024424 T DE 60024424T DE 60024424 D1 DE60024424 D1 DE 60024424D1
- Authority
- DE
- Germany
- Prior art keywords
- chamber
- semiconductor wafer
- wafer
- transfer system
- transformer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title abstract 4
- 235000012431 wafers Nutrition 0.000 abstract 6
- 238000000034 method Methods 0.000 abstract 5
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68707—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a robot blade, or gripped by a gripper for conveyance
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
- H01L21/67173—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers in-line arrangement
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
- H01L21/67178—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers vertical arrangement
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67196—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the transfer chamber
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67201—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the load-lock chamber
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67742—Mechanical parts of transfer devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67745—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber characterized by movements or sequence of movements of transfer devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67751—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber vertical transfer of a single workpiece
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S414/00—Material or article handling
- Y10S414/135—Associated with semiconductor wafer handling
- Y10S414/141—Associated with semiconductor wafer handling includes means for gripping wafer
Applications Claiming Priority (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12765099P | 1999-04-02 | 1999-04-02 | |
| US12753299P | 1999-04-02 | 1999-04-02 | |
| US127650P | 1999-04-02 | ||
| US127532P | 1999-04-02 | ||
| US483945 | 2000-01-13 | ||
| US09/483,945 US6610150B1 (en) | 1999-04-02 | 2000-01-13 | Semiconductor wafer processing system with vertically-stacked process chambers and single-axis dual-wafer transfer system |
| PCT/US2000/007509 WO2000060414A1 (en) | 1999-04-02 | 2000-03-21 | Semiconductor wafer processing system with vertically-stacked process chambers and single-axis dual-wafer transfer system |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE60024424D1 true DE60024424D1 (de) | 2006-01-05 |
| DE60024424T2 DE60024424T2 (de) | 2006-07-27 |
Family
ID=27383593
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE60024424T Expired - Fee Related DE60024424T2 (de) | 1999-04-02 | 2000-03-21 | Halbleiter-Wafer Entwicklungsgerät mit vertikal gestapelte Entwicklungsräume und einachsiges Dual-Wafer Transfer System |
Country Status (12)
| Country | Link |
|---|---|
| US (3) | US6610150B1 (de) |
| EP (1) | EP1166180B1 (de) |
| JP (2) | JP2002541657A (de) |
| KR (1) | KR100455226B1 (de) |
| CN (1) | CN1348552A (de) |
| AT (1) | ATE311619T1 (de) |
| AU (1) | AU3906900A (de) |
| CA (1) | CA2369042A1 (de) |
| DE (1) | DE60024424T2 (de) |
| IL (1) | IL145678A0 (de) |
| TW (2) | TWI251252B (de) |
| WO (1) | WO2000060414A1 (de) |
Families Citing this family (115)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0936198A (ja) * | 1995-07-19 | 1997-02-07 | Hitachi Ltd | 真空処理装置およびそれを用いた半導体製造ライン |
| US6949143B1 (en) * | 1999-12-15 | 2005-09-27 | Applied Materials, Inc. | Dual substrate loadlock process equipment |
| US6429139B1 (en) * | 1999-12-17 | 2002-08-06 | Eaton Corporation | Serial wafer handling mechanism |
| US6977014B1 (en) | 2000-06-02 | 2005-12-20 | Novellus Systems, Inc. | Architecture for high throughput semiconductor processing applications |
| US6860965B1 (en) * | 2000-06-23 | 2005-03-01 | Novellus Systems, Inc. | High throughput architecture for semiconductor processing |
| JP5021112B2 (ja) * | 2000-08-11 | 2012-09-05 | キヤノンアネルバ株式会社 | 真空処理装置 |
| EP1319243A2 (de) * | 2000-09-15 | 2003-06-18 | Applied Materials, Inc. | Zweifachladungsschleusenvorrichtung mit doppelschlitz für prozessanlage |
| US6485248B1 (en) * | 2000-10-10 | 2002-11-26 | Applied Materials, Inc. | Multiple wafer lift apparatus and associated method |
| JP3955724B2 (ja) * | 2000-10-12 | 2007-08-08 | 株式会社ルネサステクノロジ | 半導体集積回路装置の製造方法 |
| KR20020072449A (ko) * | 2001-03-10 | 2002-09-16 | 주식회사 아이피에스 | 자동연속 웨이퍼가공시스템 및 그를 이용한 웨이퍼가공방법 |
| US20020137346A1 (en) * | 2001-03-12 | 2002-09-26 | Applied Materials. Inc. | Workpiece distribution and processing in a high throughput stacked frame |
| US20020154975A1 (en) * | 2001-04-18 | 2002-10-24 | Applied Materials, Inc. | Method and apparatus for wafer exchange employing stacked robot blades |
| US7231141B2 (en) * | 2001-04-23 | 2007-06-12 | Asm America, Inc. | High temperature drop-off of a substrate |
| KR100417245B1 (ko) * | 2001-05-02 | 2004-02-05 | 주성엔지니어링(주) | 웨이퍼 가공을 위한 클러스터 툴 |
| ATE360885T1 (de) * | 2001-05-31 | 2007-05-15 | S E S Company Ltd | Substratreinigungssystem |
| US6663333B2 (en) * | 2001-07-13 | 2003-12-16 | Axcelis Technologies, Inc. | Wafer transport apparatus |
| US7316966B2 (en) * | 2001-09-21 | 2008-01-08 | Applied Materials, Inc. | Method for transferring substrates in a load lock chamber |
| KR20030038396A (ko) * | 2001-11-01 | 2003-05-16 | 에이에스엠엘 유에스, 인코포레이티드 | 우선적인 화학 기상 증착 장치 및 방법 |
| KR100454393B1 (ko) * | 2001-12-18 | 2004-10-26 | 코스텍시스템(주) | 복층 수직형 매엽식 반도체 웨이퍼 처리장치 |
| TWI274393B (en) * | 2002-04-08 | 2007-02-21 | Acm Res Inc | Electropolishing and/or electroplating apparatus and methods |
| AU2003233581A1 (en) * | 2002-05-21 | 2003-12-12 | Aviza Technology, Inc | Method of depositing an oxide film by chemical vapor deposition |
| US6913652B2 (en) * | 2002-06-17 | 2005-07-05 | Applied Materials, Inc. | Gas flow division in a wafer processing system having multiple chambers |
| US7032287B1 (en) * | 2002-07-19 | 2006-04-25 | Nanometrics Incorporated | Edge grip chuck |
| WO2004046416A1 (en) * | 2002-11-15 | 2004-06-03 | Unaxis Balzers Ag | Apparatus for vacuum treating two dimensionally extended substrates and method for manufacturing such substrates |
| US20040099283A1 (en) * | 2002-11-26 | 2004-05-27 | Axcelis Technologies, Inc. | Drying process for low-k dielectric films |
| SG115631A1 (en) * | 2003-03-11 | 2005-10-28 | Asml Netherlands Bv | Lithographic projection assembly, load lock and method for transferring objects |
| SG115629A1 (en) | 2003-03-11 | 2005-10-28 | Asml Netherlands Bv | Method and apparatus for maintaining a machine part |
| JP4303041B2 (ja) * | 2003-06-18 | 2009-07-29 | 株式会社ディスコ | 半導体ウエーハの加工装置 |
| CN101894779B (zh) * | 2003-08-29 | 2013-05-01 | 交叉自动控制公司 | 用于半导体处理的方法和装置 |
| JP4137750B2 (ja) * | 2003-09-17 | 2008-08-20 | 株式会社Ｓｏｋｕｄｏ | 熱処理装置、熱処理方法および基板処理装置 |
| KR100699994B1 (ko) | 2004-08-30 | 2007-03-26 | 삼성에스디아이 주식회사 | 라미네이션 장비 및 레이저 열전사 방법 |
| US7207766B2 (en) * | 2003-10-20 | 2007-04-24 | Applied Materials, Inc. | Load lock chamber for large area substrate processing system |
| KR100583724B1 (ko) * | 2003-10-29 | 2006-05-25 | 삼성전자주식회사 | 기판 이송 장치 |
| US20050115492A1 (en) * | 2003-11-28 | 2005-06-02 | Chia-Cheng Liu | Method and apparatus of the chemical metal organic vapor epitaxy for the multi-chamber epitaxy layer deposition |
| US20050205210A1 (en) * | 2004-01-06 | 2005-09-22 | Devine Daniel J | Advanced multi-pressure workpiece processing |
| US6987272B2 (en) * | 2004-03-05 | 2006-01-17 | Axcelis Technologies, Inc. | Work piece transfer system for an ion beam implanter |
| US7246985B2 (en) * | 2004-04-16 | 2007-07-24 | Axcelis Technologies, Inc. | Work-piece processing system |
| US8668422B2 (en) * | 2004-08-17 | 2014-03-11 | Mattson Technology, Inc. | Low cost high throughput processing platform |
| US20060156979A1 (en) * | 2004-11-22 | 2006-07-20 | Applied Materials, Inc. | Substrate processing apparatus using a batch processing chamber |
| US7798764B2 (en) * | 2005-12-22 | 2010-09-21 | Applied Materials, Inc. | Substrate processing sequence in a cartesian robot cluster tool |
| KR100613343B1 (ko) * | 2004-12-22 | 2006-08-21 | 동부일렉트로닉스 주식회사 | 반도체 소자의 제조 장치 |
| US7651306B2 (en) * | 2004-12-22 | 2010-01-26 | Applied Materials, Inc. | Cartesian robot cluster tool architecture |
| US7819079B2 (en) * | 2004-12-22 | 2010-10-26 | Applied Materials, Inc. | Cartesian cluster tool configuration for lithography type processes |
| US20060182535A1 (en) * | 2004-12-22 | 2006-08-17 | Mike Rice | Cartesian robot design |
| US20060130767A1 (en) * | 2004-12-22 | 2006-06-22 | Applied Materials, Inc. | Purged vacuum chuck with proximity pins |
| US8821099B2 (en) | 2005-07-11 | 2014-09-02 | Brooks Automation, Inc. | Load port module |
| US20070028842A1 (en) * | 2005-08-02 | 2007-02-08 | Makoto Inagawa | Vacuum chamber bottom |
| CN100358097C (zh) * | 2005-08-05 | 2007-12-26 | 中微半导体设备(上海)有限公司 | 半导体工艺处理系统及其处理方法 |
| US7470919B2 (en) * | 2005-09-30 | 2008-12-30 | Applied Materials, Inc. | Substrate support assembly with thermal isolating plate |
| US20070084408A1 (en) * | 2005-10-13 | 2007-04-19 | Applied Materials, Inc. | Batch processing chamber with diffuser plate and injector assembly |
| US20070084406A1 (en) * | 2005-10-13 | 2007-04-19 | Joseph Yudovsky | Reaction chamber with opposing pockets for gas injection and exhaust |
| CN100394574C (zh) * | 2005-12-08 | 2008-06-11 | 北京圆合电子技术有限责任公司 | 具有流量控制的平台真空气路系统及其控制方法 |
| US7845891B2 (en) | 2006-01-13 | 2010-12-07 | Applied Materials, Inc. | Decoupled chamber body |
| WO2007101207A2 (en) * | 2006-02-27 | 2007-09-07 | Anaconda Semi Lp | Process chambers for substrate vacuum processing tool |
| US8322299B2 (en) * | 2006-05-17 | 2012-12-04 | Taiwan Semiconductor Manufacturing Co., Ltd. | Cluster processing apparatus for metallization processing in semiconductor manufacturing |
| US7665951B2 (en) | 2006-06-02 | 2010-02-23 | Applied Materials, Inc. | Multiple slot load lock chamber and method of operation |
| US7845618B2 (en) | 2006-06-28 | 2010-12-07 | Applied Materials, Inc. | Valve door with ball coupling |
| US8124907B2 (en) | 2006-08-04 | 2012-02-28 | Applied Materials, Inc. | Load lock chamber with decoupled slit valve door seal compartment |
| US9117859B2 (en) | 2006-08-31 | 2015-08-25 | Brooks Automation, Inc. | Compact processing apparatus |
| KR100717990B1 (ko) * | 2007-01-16 | 2007-05-14 | (주)인터노바 | 반도체 자재 처리를 위한 이송 시스템 |
| US20080210168A1 (en) | 2007-01-18 | 2008-09-04 | May Su | Single chamber, multiple tube high efficiency vertical furnace system |
| US7675048B2 (en) | 2007-03-06 | 2010-03-09 | Varian Semiconductor Equipment Associates, Inc. | Wafer holding robot end effecter vertical position determination in ion implanter system |
| JP2010524201A (ja) * | 2007-03-22 | 2010-07-15 | クロッシング オートメイション， インコーポレイテッド | モジュラクラスタツール |
| US7531368B2 (en) * | 2007-03-30 | 2009-05-12 | Tokyo Electron Limited | In-line lithography and etch system |
| KR100862895B1 (ko) * | 2007-08-21 | 2008-10-13 | 세메스 주식회사 | 탄소나노튜브 합성 방법, 이를 적용한 탄소나노튜브 합성장치 및 시스템 |
| US8060252B2 (en) * | 2007-11-30 | 2011-11-15 | Novellus Systems, Inc. | High throughput method of in transit wafer position correction in system using multiple robots |
| US8033769B2 (en) | 2007-11-30 | 2011-10-11 | Novellus Systems, Inc. | Loadlock designs and methods for using same |
| US9002514B2 (en) | 2007-11-30 | 2015-04-07 | Novellus Systems, Inc. | Wafer position correction with a dual, side-by-side wafer transfer robot |
| JP4975605B2 (ja) * | 2007-12-26 | 2012-07-11 | 東京エレクトロン株式会社 | 処理システム、処理システムの制御方法およびソフトウェアのバージョンアップ方法 |
| WO2009114965A1 (en) * | 2008-03-19 | 2009-09-24 | Acm Research (Shanghai) Inc. | Electrochemical deposition system |
| US10041169B2 (en) * | 2008-05-27 | 2018-08-07 | Picosun Oy | System and method for loading a substrate holder carrying a batch of vertically placed substrates into an atomic layer deposition reactor |
| US8288288B1 (en) | 2008-06-16 | 2012-10-16 | Novellus Systems, Inc. | Transferring heat in loadlocks |
| KR101022314B1 (ko) * | 2008-07-28 | 2011-03-21 | 주식회사 에스에프에이 | 박막 태양전지 제조용 화학 기상 증착 장치 |
| US8282334B2 (en) | 2008-08-01 | 2012-10-09 | Picosun Oy | Atomic layer deposition apparatus and loading methods |
| US8033771B1 (en) | 2008-12-11 | 2011-10-11 | Novellus Systems, Inc. | Minimum contact area wafer clamping with gas flow for rapid wafer cooling |
| JP4707749B2 (ja) * | 2009-04-01 | 2011-06-22 | 東京エレクトロン株式会社 | 基板交換方法及び基板処理装置 |
| US8847122B2 (en) * | 2009-06-08 | 2014-09-30 | Macronix International Co., Ltd. | Method and apparatus for transferring substrate |
| JP5328726B2 (ja) * | 2009-08-25 | 2013-10-30 | 三星ディスプレイ株式會社 | 薄膜蒸着装置及びこれを利用した有機発光ディスプレイ装置の製造方法 |
| JP5677785B2 (ja) | 2009-08-27 | 2015-02-25 | 三星ディスプレイ株式會社Ｓａｍｓｕｎｇ Ｄｉｓｐｌａｙ Ｃｏ．，Ｌｔｄ． | 薄膜蒸着装置及びこれを利用した有機発光表示装置の製造方法 |
| JP5611718B2 (ja) * | 2009-08-27 | 2014-10-22 | 三星ディスプレイ株式會社Ｓａｍｓｕｎｇ Ｄｉｓｐｌａｙ Ｃｏ．，Ｌｔｄ． | 薄膜蒸着装置及びこれを利用した有機発光表示装置の製造方法 |
| US20110052795A1 (en) * | 2009-09-01 | 2011-03-03 | Samsung Mobile Display Co., Ltd. | Thin film deposition apparatus and method of manufacturing organic light-emitting display device by using the same |
| US8876975B2 (en) | 2009-10-19 | 2014-11-04 | Samsung Display Co., Ltd. | Thin film deposition apparatus |
| KR101084184B1 (ko) | 2010-01-11 | 2011-11-17 | 삼성모바일디스플레이주식회사 | 박막 증착 장치 |
| KR101174875B1 (ko) * | 2010-01-14 | 2012-08-17 | 삼성디스플레이 주식회사 | 박막 증착 장치, 이를 이용한 유기 발광 디스플레이 장치의 제조방법 및 이에 따라 제조된 유기 발광 디스플레이 장치 |
| KR101193186B1 (ko) | 2010-02-01 | 2012-10-19 | 삼성디스플레이 주식회사 | 박막 증착 장치, 이를 이용한 유기 발광 디스플레이 장치의 제조방법 및 이에 따라 제조된 유기 발광 디스플레이 장치 |
| KR101156441B1 (ko) | 2010-03-11 | 2012-06-18 | 삼성모바일디스플레이주식회사 | 박막 증착 장치 |
| KR101202348B1 (ko) | 2010-04-06 | 2012-11-16 | 삼성디스플레이 주식회사 | 박막 증착 장치 및 이를 이용한 유기 발광 표시 장치의 제조 방법 |
| US8894458B2 (en) | 2010-04-28 | 2014-11-25 | Samsung Display Co., Ltd. | Thin film deposition apparatus, method of manufacturing organic light-emitting display device by using the apparatus, and organic light-emitting display device manufactured by using the method |
| KR101223723B1 (ko) | 2010-07-07 | 2013-01-18 | 삼성디스플레이 주식회사 | 박막 증착 장치, 이를 이용한 유기 발광 디스플레이 장치의 제조방법 및 이에 따라 제조된 유기 발광 디스플레이 장치 |
| KR101678056B1 (ko) | 2010-09-16 | 2016-11-22 | 삼성디스플레이 주식회사 | 박막 증착 장치, 이를 이용한 유기 발광 디스플레이 장치의 제조방법 및 이에 따라 제조된 유기 발광 디스플레이 장치 |
| KR101723506B1 (ko) | 2010-10-22 | 2017-04-19 | 삼성디스플레이 주식회사 | 유기층 증착 장치 및 이를 이용한 유기 발광 디스플레이 장치의 제조 방법 |
| KR101738531B1 (ko) | 2010-10-22 | 2017-05-23 | 삼성디스플레이 주식회사 | 유기 발광 디스플레이 장치의 제조 방법 및 이에 따라 제조된 유기 발광 디스플레이 장치 |
| KR20120045865A (ko) | 2010-11-01 | 2012-05-09 | 삼성모바일디스플레이주식회사 | 유기층 증착 장치 |
| KR20120065789A (ko) | 2010-12-13 | 2012-06-21 | 삼성모바일디스플레이주식회사 | 유기층 증착 장치 |
| KR101760897B1 (ko) | 2011-01-12 | 2017-07-25 | 삼성디스플레이 주식회사 | 증착원 및 이를 구비하는 유기막 증착 장치 |
| EP2700081B1 (de) | 2011-04-22 | 2022-11-02 | ASML Netherlands B.V. | Netzwerkarchitektur und protokoll für einen cluster von lithografiegeräten |
| KR101852517B1 (ko) | 2011-05-25 | 2018-04-27 | 삼성디스플레이 주식회사 | 유기층 증착 장치 및 이를 이용한 유기 발광 디스플레이 장치의 제조 방법 |
| KR101840654B1 (ko) | 2011-05-25 | 2018-03-22 | 삼성디스플레이 주식회사 | 유기층 증착 장치 및 이를 이용한 유기 발광 디스플레이 장치의 제조 방법 |
| KR101857249B1 (ko) | 2011-05-27 | 2018-05-14 | 삼성디스플레이 주식회사 | 패터닝 슬릿 시트 어셈블리, 유기막 증착 장치, 유기 발광 표시장치제조 방법 및 유기 발광 표시 장치 |
| KR101826068B1 (ko) | 2011-07-04 | 2018-02-07 | 삼성디스플레이 주식회사 | 유기층 증착 장치 |
| KR20130004830A (ko) | 2011-07-04 | 2013-01-14 | 삼성디스플레이 주식회사 | 유기층 증착 장치 및 이를 이용한 유기 발광 표시 장치의 제조 방법 |
| US9305815B2 (en) | 2012-03-01 | 2016-04-05 | Taiwan Semiconductor Manufacturing Co., Ltd. | Automated material handling system and method for semiconductor manufacturing |
| CN103276369B (zh) * | 2013-05-06 | 2016-02-17 | 南方科技大学 | 一种pecvd镀膜系统 |
| CN105309062B (zh) * | 2013-06-07 | 2018-12-21 | 株式会社富士 | 电子设备组装机 |
| KR102108361B1 (ko) | 2013-06-24 | 2020-05-11 | 삼성디스플레이 주식회사 | 증착률 모니터링 장치, 이를 구비하는 유기층 증착 장치, 증착률 모니터링 방법, 및 이를 이용한 유기 발광 디스플레이 장치의 제조 방법 |
| US20150041062A1 (en) * | 2013-08-12 | 2015-02-12 | Lam Research Corporation | Plasma processing chamber with removable body |
| KR101527901B1 (ko) * | 2013-10-10 | 2015-06-10 | 피에스케이 주식회사 | 기판 처리 장치 및 기판 반송 방법 |
| US10113236B2 (en) * | 2014-05-14 | 2018-10-30 | Applied Materials, Inc. | Batch curing chamber with gas distribution and individual pumping |
| US20170194174A1 (en) * | 2015-12-30 | 2017-07-06 | Applied Materials, Inc. | Quad chamber and platform having multiple quad chambers |
| US11694907B2 (en) * | 2016-08-04 | 2023-07-04 | Kokusai Electric Corporation | Substrate processing apparatus, recording medium, and fluid circulation mechanism |
| JP6270952B1 (ja) * | 2016-09-28 | 2018-01-31 | 株式会社日立国際電気 | 基板処理装置、半導体装置の製造方法および記録媒体。 |
| US10003018B1 (en) * | 2017-05-08 | 2018-06-19 | Tokyo Electron Limited | Vertical multi-batch magnetic annealing systems for reduced footprint manufacturing environments |
| WO2018213014A1 (en) * | 2017-05-16 | 2018-11-22 | Smartfabs Corporation | Method and system to route semiconductor parts to machines distributed in a multi-building plant |
| US10796940B2 (en) | 2018-11-05 | 2020-10-06 | Lam Research Corporation | Enhanced automatic wafer centering system and techniques for same |
| US10770338B2 (en) * | 2018-12-19 | 2020-09-08 | Globalfoundries Inc. | System comprising a single wafer, reduced volume process chamber |
Family Cites Families (43)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3220331A (en) | 1965-01-27 | 1965-11-30 | Kulicke And Soffa Mfg Company | Contact printing mask alignment apparatus for semiconductor wafer geometry |
| US4423701A (en) | 1982-03-29 | 1984-01-03 | Energy Conversion Devices, Inc. | Glow discharge deposition apparatus including a non-horizontally disposed cathode |
| US5259881A (en) | 1991-05-17 | 1993-11-09 | Materials Research Corporation | Wafer processing cluster tool batch preheating and degassing apparatus |
| DE3427057A1 (de) | 1984-07-23 | 1986-01-23 | Standard Elektrik Lorenz Ag, 7000 Stuttgart | Anlage zum herstellen von halbleiter-schichtstrukturen durch epitaktisches wachstum |
| JPS63128710A (ja) | 1986-11-19 | 1988-06-01 | Mitsubishi Electric Corp | 反応炉 |
| US4816098A (en) | 1987-07-16 | 1989-03-28 | Texas Instruments Incorporated | Apparatus for transferring workpieces |
| JP2502661B2 (ja) | 1988-03-04 | 1996-05-29 | 松下電器産業株式会社 | 気相成長装置 |
| JP2600399B2 (ja) * | 1989-10-23 | 1997-04-16 | 富士電機株式会社 | 半導体ウエーハ処理装置 |
| JPH04141587A (ja) * | 1990-10-01 | 1992-05-15 | Nec Corp | スパッタリング装置 |
| US5275709A (en) | 1991-11-07 | 1994-01-04 | Leybold Aktiengesellschaft | Apparatus for coating substrates, preferably flat, more or less plate-like substrates |
| JP2867194B2 (ja) * | 1992-02-05 | 1999-03-08 | 東京エレクトロン株式会社 | 処理装置及び処理方法 |
| JP3172331B2 (ja) * | 1993-04-28 | 2001-06-04 | 東京エレクトロン株式会社 | 真空処理装置 |
| US5800686A (en) * | 1993-04-05 | 1998-09-01 | Applied Materials, Inc. | Chemical vapor deposition chamber with substrate edge protection |
| US5518542A (en) * | 1993-11-05 | 1996-05-21 | Tokyo Electron Limited | Double-sided substrate cleaning apparatus |
| EP0733130A4 (de) | 1993-12-17 | 1997-04-02 | Brooks Automation Inc | Vorrichtung zum heizen und kuehlen von wafers |
| US5588827A (en) | 1993-12-17 | 1996-12-31 | Brooks Automation Inc. | Passive gas substrate thermal conditioning apparatus and method |
| DE4408537A1 (de) * | 1994-03-14 | 1995-09-21 | Leybold Ag | Vorrichtung für den Transport von Substraten |
| JPH0846013A (ja) | 1994-05-23 | 1996-02-16 | Tokyo Electron Ltd | マルチチャンバ処理システム用搬送装置 |
| JPH07321178A (ja) * | 1994-05-24 | 1995-12-08 | Hitachi Ltd | 搬送装置およびその搬送装置を有するマルチチャンバ装置 |
| US6200389B1 (en) * | 1994-07-18 | 2001-03-13 | Silicon Valley Group Thermal Systems Llc | Single body injector and deposition chamber |
| US5558717A (en) * | 1994-11-30 | 1996-09-24 | Applied Materials | CVD Processing chamber |
| TW297910B (de) | 1995-02-02 | 1997-02-11 | Tokyo Electron Co Ltd | |
| JP3483693B2 (ja) * | 1995-02-02 | 2004-01-06 | 東京エレクトロン株式会社 | 搬送装置，搬送方法及び処理システム |
| JP3380652B2 (ja) * | 1995-05-26 | 2003-02-24 | 東京エレクトロン株式会社 | 処理装置 |
| TW278200B (en) * | 1995-07-06 | 1996-06-11 | Brooks Automation Inc | Door drive mechanisms for substrate carrier and load lock |
| US5607276A (en) | 1995-07-06 | 1997-03-04 | Brooks Automation, Inc. | Batchloader for substrate carrier on load lock |
| US5664925A (en) | 1995-07-06 | 1997-09-09 | Brooks Automation, Inc. | Batchloader for load lock |
| US5613821A (en) | 1995-07-06 | 1997-03-25 | Brooks Automation, Inc. | Cluster tool batchloader of substrate carrier |
| TW318258B (de) | 1995-12-12 | 1997-10-21 | Tokyo Electron Co Ltd | |
| US5751003A (en) | 1996-02-16 | 1998-05-12 | Eaton Corporation | Loadlock assembly for an ion implantation system |
| US5811823A (en) * | 1996-02-16 | 1998-09-22 | Eaton Corporation | Control mechanisms for dosimetry control in ion implantation systems |
| US5810549A (en) * | 1996-04-17 | 1998-09-22 | Applied Materials, Inc. | Independent linear dual-blade robot and method for transferring wafers |
| US5954472A (en) * | 1996-07-15 | 1999-09-21 | Brooks Automation, Inc. | Batch loader arm |
| JP3549674B2 (ja) * | 1996-07-19 | 2004-08-04 | 東京応化工業株式会社 | ロードロック室を備えた基板の処理装置 |
| KR100269097B1 (ko) * | 1996-08-05 | 2000-12-01 | 엔도 마코토 | 기판처리장치 |
| JPH10107124A (ja) | 1996-08-05 | 1998-04-24 | Kokusai Electric Co Ltd | 基板処理装置 |
| US5893699A (en) * | 1996-10-31 | 1999-04-13 | Phase Metrics, Inc. | End effector for a robotic arm of a disk certifier |
| US5879459A (en) * | 1997-08-29 | 1999-03-09 | Genus, Inc. | Vertically-stacked process reactor and cluster tool system for atomic layer deposition |
| US6073366A (en) | 1997-07-11 | 2000-06-13 | Asm America, Inc. | Substrate cooling system and method |
| JPH11135600A (ja) * | 1997-08-25 | 1999-05-21 | Shibaura Mechatronics Corp | ロボット装置および処理装置 |
| DE29716440U1 (de) | 1997-09-12 | 1997-12-11 | Balzers Hochvakuum | Sputterstation |
| US6722834B1 (en) * | 1997-10-08 | 2004-04-20 | Applied Materials, Inc. | Robot blade with dual offset wafer supports |
| US6585478B1 (en) * | 2000-11-07 | 2003-07-01 | Asm America, Inc. | Semiconductor handling robot with improved paddle-type end effector |
-
2000
- 2000-01-13 US US09/483,945 patent/US6610150B1/en not_active Expired - Fee Related
- 2000-03-21 AU AU39069/00A patent/AU3906900A/en not_active Abandoned
- 2000-03-21 AT AT00918219T patent/ATE311619T1/de not_active IP Right Cessation
- 2000-03-21 KR KR10-2001-7012462A patent/KR100455226B1/ko not_active IP Right Cessation
- 2000-03-21 EP EP00918219A patent/EP1166180B1/de not_active Expired - Lifetime
- 2000-03-21 DE DE60024424T patent/DE60024424T2/de not_active Expired - Fee Related
- 2000-03-21 WO PCT/US2000/007509 patent/WO2000060414A1/en active IP Right Grant
- 2000-03-21 CN CN00806652A patent/CN1348552A/zh active Pending
- 2000-03-21 CA CA002369042A patent/CA2369042A1/en not_active Abandoned
- 2000-03-21 JP JP2000609844A patent/JP2002541657A/ja active Pending
- 2000-03-31 TW TW092126373A patent/TWI251252B/zh not_active IP Right Cessation
- 2000-03-31 TW TW089106019A patent/TWI238438B/zh not_active IP Right Cessation
- 2000-04-21 IL IL14567800A patent/IL145678A0/xx unknown
-
2001
- 2001-01-22 US US09/767,659 patent/US20010010950A1/en not_active Abandoned
- 2001-11-27 US US09/996,869 patent/US6846149B2/en not_active Expired - Fee Related
-
2006
- 2006-04-11 JP JP2006109009A patent/JP2006216983A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| CN1348552A (zh) | 2002-05-08 |
| IL145678A0 (en) | 2002-06-30 |
| EP1166180A1 (de) | 2002-01-02 |
| CA2369042A1 (en) | 2000-10-12 |
| US20020033136A1 (en) | 2002-03-21 |
| WO2000060414A1 (en) | 2000-10-12 |
| US6846149B2 (en) | 2005-01-25 |
| DE60024424T2 (de) | 2006-07-27 |
| EP1166180A4 (de) | 2002-11-06 |
| JP2002541657A (ja) | 2002-12-03 |
| KR20010110471A (ko) | 2001-12-13 |
| ATE311619T1 (de) | 2005-12-15 |
| TWI238438B (en) | 2005-08-21 |
| EP1166180B1 (de) | 2005-11-30 |
| AU3906900A (en) | 2000-10-23 |
| US20010010950A1 (en) | 2001-08-02 |
| KR100455226B1 (ko) | 2004-11-06 |
| JP2006216983A (ja) | 2006-08-17 |
| US6610150B1 (en) | 2003-08-26 |
| TW200401331A (en) | 2004-01-16 |
| TWI251252B (en) | 2006-03-11 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE60024424D1 (de) | Halbleiter-wafer etwicklungsgerät mit vertikal gestapelteentwicklungsraüme und einachsiges dual-wafer transfer system | |
| US11352220B2 (en) | Semiconductor wafer handling and transport | |
| US9884726B2 (en) | Semiconductor wafer handling transport | |
| JP2007533167A5 (de) | ||
| KR20020010657A (ko) | 처리 장치 및 처리 방법 | |
| WO2004086465A3 (en) | Method and apparatus for high speed wafer handling | |
| WO2002005313A3 (en) | Automated processing system | |
| TW200707621A (en) | Cartesian robot cluster tool architecture | |
| AU1933900A (en) | Apparatus for processing wafers | |
| EP1047114A3 (de) | Verfahren zur Erkennung von Scheibelage | |
| KR20150054677A (ko) | 분위기 치환 장치, 기판 반송 장치, 기판 반송 시스템 및 efem | |
| TW200508140A (en) | Method and apparatus for vertical transfer of semiconductor substrates between cleaning modules | |
| EP1052681A3 (de) | Verfahren und Vorrichtung zur Behandlung von Scheiben | |
| IL152500A0 (en) | Throughput enhancement for single wafer reactor | |
| TW367530B (en) | Multiple substrate processing apparatus for enhanced throughput | |
| JPH01251734A (ja) | マルチチャンバ型ｃｖｄ装置 | |
| KR101039441B1 (ko) | 웨이퍼 센터링 방법 | |
| KR19980029384A (ko) | 반도체 소자 제조 장치 | |
| CN111604604A (zh) | 一种半导体元件加工用成型设备及其使用方法 | |
| AU2003290835A1 (en) | Workpiece processing system | |
| KR970011208U (ko) | 반도체 제조공정용 진공흡착형 포터블 웨이퍼 핸들러 | |
| TW344865B (en) | Automated metallization system for semiconductor device fabrication | |
| KR19990018377A (ko) | 웨이퍼 척킹 방법 | |
| MY115381A (en) | 300mm microenvironment pod with door on side |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8364 | No opposition during term of opposition | ||
| 8339 | Ceased/non-payment of the annual fee |