DE60028343D1 - Nanokapseln mit geladenen teilchen, deren verwendung und verfahren zu ihrer herstellung - Google Patents

Nanokapseln mit geladenen teilchen, deren verwendung und verfahren zu ihrer herstellung

Info

Publication number
DE60028343D1
DE60028343D1 DE60028343T DE60028343T DE60028343D1 DE 60028343 D1 DE60028343 D1 DE 60028343D1 DE 60028343 T DE60028343 T DE 60028343T DE 60028343 T DE60028343 T DE 60028343T DE 60028343 D1 DE60028343 D1 DE 60028343D1
Authority
DE
Germany
Prior art keywords
manufacture
loaded particles
nano capsules
capsules
nano
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60028343T
Other languages
English (en)
Other versions
DE60028343T2 (de
Inventor
David Tomanek
Richard Enbody
Kwon Young-Kyun
W Brehob
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Michigan State University MSU
Michigan Technological University
Original Assignee
Michigan State University MSU
Michigan Technological University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Michigan State University MSU, Michigan Technological University filed Critical Michigan State University MSU
Publication of DE60028343D1 publication Critical patent/DE60028343D1/de
Application granted granted Critical
Publication of DE60028343T2 publication Critical patent/DE60028343T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/02—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change
    • G11C13/025—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change using fullerenes, e.g. C60, or nanotubes, e.g. carbon or silicon nanotubes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y15/00—Nanotechnology for interacting, sensing or actuating, e.g. quantum dots as markers in protein assays or molecular motors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B9/00—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
    • G11B9/12—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor
    • G11B9/14—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor using microscopic probe means, i.e. recording or reproducing by means directly associated with the tip of a microscopic electrical probe as used in Scanning Tunneling Microscopy [STM] or Atomic Force Microscopy [AFM] for inducing physical or electrical perturbations in a recording medium; Record carriers or media specially adapted for such transducing of information
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B9/00—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
    • G11B9/12—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor
    • G11B9/14—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor using microscopic probe means, i.e. recording or reproducing by means directly associated with the tip of a microscopic electrical probe as used in Scanning Tunneling Microscopy [STM] or Atomic Force Microscopy [AFM] for inducing physical or electrical perturbations in a recording medium; Record carriers or media specially adapted for such transducing of information
    • G11B9/1409—Heads
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B9/00—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
    • G11B9/12—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor
    • G11B9/14—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor using microscopic probe means, i.e. recording or reproducing by means directly associated with the tip of a microscopic electrical probe as used in Scanning Tunneling Microscopy [STM] or Atomic Force Microscopy [AFM] for inducing physical or electrical perturbations in a recording medium; Record carriers or media specially adapted for such transducing of information
    • G11B9/1463—Record carriers for recording or reproduction involving the use of microscopic probe means
    • G11B9/1472—Record carriers for recording or reproduction involving the use of microscopic probe means characterised by the form
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B9/00—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
    • G11B9/12—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor
    • G11B9/14—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor using microscopic probe means, i.e. recording or reproducing by means directly associated with the tip of a microscopic electrical probe as used in Scanning Tunneling Microscopy [STM] or Atomic Force Microscopy [AFM] for inducing physical or electrical perturbations in a recording medium; Record carriers or media specially adapted for such transducing of information
    • G11B9/1463—Record carriers for recording or reproduction involving the use of microscopic probe means
    • G11B9/149—Record carriers for recording or reproduction involving the use of microscopic probe means characterised by the memorising material or structure
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B9/00—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
    • G11B9/12—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor
    • G11B9/14—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor using microscopic probe means, i.e. recording or reproducing by means directly associated with the tip of a microscopic electrical probe as used in Scanning Tunneling Microscopy [STM] or Atomic Force Microscopy [AFM] for inducing physical or electrical perturbations in a recording medium; Record carriers or media specially adapted for such transducing of information
    • G11B9/1418—Disposition or mounting of heads or record carriers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/04—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using optical elements ; using other beam accessed elements, e.g. electron or ion beam
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/10—Resistive cells; Technology aspects
    • G11C2213/16—Memory cell being a nanotube, e.g. suspended nanotube
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/10—Resistive cells; Technology aspects
    • G11C2213/19—Memory cell comprising at least a nanowire and only two terminals
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/77—Array wherein the memory element being directly connected to the bit lines and word lines without any access device being used
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/902—Specified use of nanostructure
    • Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
    • Y10S977/943—Information storage or retrieval using nanostructure
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/902—Specified use of nanostructure
    • Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
    • Y10S977/943—Information storage or retrieval using nanostructure
    • Y10S977/947—Information storage or retrieval using nanostructure with scanning probe instrument
DE60028343T 1999-02-12 2000-02-11 Nanokapseln mit geladenen teilchen, deren verwendung und verfahren zu ihrer herstellung Expired - Lifetime DE60028343T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12002399P 1999-02-12 1999-02-12
US120023P 1999-02-12
PCT/US2000/003573 WO2000048195A1 (en) 1999-02-12 2000-02-11 Nanocapsules containing charged particles, their uses and methods of forming the same

Publications (2)

Publication Number Publication Date
DE60028343D1 true DE60028343D1 (de) 2006-07-06
DE60028343T2 DE60028343T2 (de) 2007-05-24

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
DE60028343T Expired - Lifetime DE60028343T2 (de) 1999-02-12 2000-02-11 Nanokapseln mit geladenen teilchen, deren verwendung und verfahren zu ihrer herstellung

Country Status (7)

Country Link
US (1) US6473351B2 (de)
EP (1) EP1157386B1 (de)
JP (1) JP4658329B2 (de)
AU (1) AU3698100A (de)
DE (1) DE60028343T2 (de)
ES (1) ES2264928T3 (de)
WO (1) WO2000048195A1 (de)

Families Citing this family (89)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6859548B2 (en) 1996-09-25 2005-02-22 Kabushiki Kaisha Toshiba Ultrasonic picture processing method and ultrasonic picture processing apparatus
US6203864B1 (en) * 1998-06-08 2001-03-20 Nec Corporation Method of forming a heterojunction of a carbon nanotube and a different material, method of working a filament of a nanotube
WO2001008164A1 (en) * 1999-07-26 2001-02-01 The Trustees Of The University Of Pennsylvania Single-walled nanotubes having filled lumens and methods for producing the same
US20030218927A1 (en) * 2000-12-11 2003-11-27 Yaron Mayer RAM memory based on nanotechnology, capable, among other things, of replacing the hard disk in computers
US6873540B2 (en) * 2001-05-07 2005-03-29 Advanced Micro Devices, Inc. Molecular memory cell
JP4731794B2 (ja) 2001-05-07 2011-07-27 アドバンスト・マイクロ・ディバイシズ・インコーポレイテッド メモリ効果を有するスイッチ素子及び該素子をスイッチングさせる方法
WO2002091496A2 (en) 2001-05-07 2002-11-14 Advanced Micro Devices, Inc. Reversible field-programmable electric interconnects
CN100403450C (zh) * 2001-05-07 2008-07-16 先进微装置公司 具有自组装聚合物薄膜的内存装置及其制造方法
DE60233486D1 (de) 2001-05-07 2009-10-08 Advanced Micro Devices Inc Floating-gate-speicherbaustein, der zusammengesetztes molekularmaterial verwendet
US6781868B2 (en) * 2001-05-07 2004-08-24 Advanced Micro Devices, Inc. Molecular memory device
GB0116943D0 (en) 2001-07-11 2001-09-05 Isis Innovation Information register
US6919592B2 (en) 2001-07-25 2005-07-19 Nantero, Inc. Electromechanical memory array using nanotube ribbons and method for making same
US6574130B2 (en) * 2001-07-25 2003-06-03 Nantero, Inc. Hybrid circuit having nanotube electromechanical memory
US6706402B2 (en) 2001-07-25 2004-03-16 Nantero, Inc. Nanotube films and articles
US7563711B1 (en) 2001-07-25 2009-07-21 Nantero, Inc. Method of forming a carbon nanotube-based contact to semiconductor
US7259410B2 (en) 2001-07-25 2007-08-21 Nantero, Inc. Devices having horizontally-disposed nanofabric articles and methods of making the same
US6838720B2 (en) * 2001-08-13 2005-01-04 Advanced Micro Devices, Inc. Memory device with active passive layers
US6858481B2 (en) * 2001-08-13 2005-02-22 Advanced Micro Devices, Inc. Memory device with active and passive layers
US6806526B2 (en) 2001-08-13 2004-10-19 Advanced Micro Devices, Inc. Memory device
KR100466159B1 (ko) * 2001-11-21 2005-01-14 재단법인서울대학교산학협력재단 탄소 나노튜브의 밴드 갭 변형방법과 이를 이용한 나노양자소자 및 그의 제조방법
US6784028B2 (en) 2001-12-28 2004-08-31 Nantero, Inc. Methods of making electromechanical three-trace junction devices
WO2003063208A2 (en) * 2002-01-18 2003-07-31 California Institute Of Technology Array-based architecture for molecular electronics
EP1341183B1 (de) 2002-02-25 2008-12-03 STMicroelectronics S.r.l. Optisch lesbarer Molekularspeicher hergestellt mit Hilfe von Kohlenstoff-Nanoröhren und Verfahren zum Speichern von Information in diesem Molekularspeicher
ATE360873T1 (de) 2002-07-25 2007-05-15 California Inst Of Techn Sublithographische nanobereichs- speicherarchitektur
US7012276B2 (en) * 2002-09-17 2006-03-14 Advanced Micro Devices, Inc. Organic thin film Zener diodes
KR100790859B1 (ko) * 2002-11-15 2008-01-03 삼성전자주식회사 수직 나노튜브를 이용한 비휘발성 메모리 소자
TWI250203B (en) * 2002-12-31 2006-03-01 Hon Hai Prec Ind Co Ltd Thermal interface material
WO2004088719A2 (en) 2003-03-28 2004-10-14 Nantero, Inc. Nanotube-on-gate fet structures and applications
US7242601B2 (en) * 2003-06-02 2007-07-10 California Institute Of Technology Deterministic addressing of nanoscale devices assembled at sublithographic pitches
WO2004109706A2 (en) * 2003-06-02 2004-12-16 California Institute Of Technology Nanoscale wire-based sublithographic programmable logic arrays
US7274064B2 (en) 2003-06-09 2007-09-25 Nanatero, Inc. Non-volatile electromechanical field effect devices and circuits using same and methods of forming same
US7115901B2 (en) 2003-06-09 2006-10-03 Nantero, Inc. Non-volatile electromechanical field effect devices and circuits using same and methods of forming same
US7692952B2 (en) * 2003-07-24 2010-04-06 California Institute Of Technology Nanoscale wire coding for stochastic assembly
EP1665278A4 (de) 2003-08-13 2007-11-07 Nantero Inc Auf nanoröhren basierende schaltelemente mit mehreren steuerungen und daraus hergestellte schaltungen
US7289357B2 (en) 2003-08-13 2007-10-30 Nantero, Inc. Isolation structure for deflectable nanotube elements
US7583526B2 (en) 2003-08-13 2009-09-01 Nantero, Inc. Random access memory including nanotube switching elements
US7115960B2 (en) 2003-08-13 2006-10-03 Nantero, Inc. Nanotube-based switching elements
WO2005017967A2 (en) 2003-08-13 2005-02-24 Nantero, Inc. Nanotube device structure and methods of fabrication
WO2005084164A2 (en) 2003-08-13 2005-09-15 Nantero, Inc. Nanotube-based switching elements and logic circuits
US7416993B2 (en) 2003-09-08 2008-08-26 Nantero, Inc. Patterned nanowire articles on a substrate and methods of making the same
US20050052983A1 (en) * 2003-09-09 2005-03-10 Vincent Kent D. Method and apparatus for electro-optical disk memory
US20090068461A1 (en) * 2003-10-16 2009-03-12 The University Of Akron Carbon nanotubes on carbon nanofiber substrate
JP2005141865A (ja) * 2003-11-07 2005-06-02 Toyota Motor Corp 高密度記録媒体
US7456482B2 (en) * 2004-03-22 2008-11-25 Cabot Microelectronics Corporation Carbon nanotube-based electronic switch
US7508039B2 (en) * 2004-05-04 2009-03-24 State Of Oregon Acting By And Through The State Board Of Higher Education On Behalf Of Portland State University Carbon nanotube (CNT) multiplexers, circuits, and actuators
US7310004B2 (en) * 2004-05-28 2007-12-18 California Institute Of Technology Apparatus and method of interconnecting nanoscale programmable logic array clusters
JP4146395B2 (ja) 2004-06-09 2008-09-10 株式会社東芝 記憶装置
US7164744B2 (en) 2004-06-18 2007-01-16 Nantero, Inc. Nanotube-based logic driver circuits
US7288970B2 (en) 2004-06-18 2007-10-30 Nantero, Inc. Integrated nanotube and field effect switching device
US7330709B2 (en) 2004-06-18 2008-02-12 Nantero, Inc. Receiver circuit using nanotube-based switches and logic
US7329931B2 (en) 2004-06-18 2008-02-12 Nantero, Inc. Receiver circuit using nanotube-based switches and transistors
US7167026B2 (en) 2004-06-18 2007-01-23 Nantero, Inc. Tri-state circuit using nanotube switching elements
US7382648B2 (en) * 2004-09-30 2008-06-03 California Institute Of Technology Nanomechanical switching device
WO2006137926A2 (en) 2004-11-02 2006-12-28 Nantero, Inc. Nanotube esd protective devices and corresponding nonvolatile and volatile nanotube switches
TW200633171A (en) * 2004-11-04 2006-09-16 Koninkl Philips Electronics Nv Nanotube-based fluid interface material and approach
US9287356B2 (en) 2005-05-09 2016-03-15 Nantero Inc. Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same
WO2006113192A2 (en) * 2005-04-06 2006-10-26 Drexel University Functional nanoparticle filled carbon nanotubes and methods of their production
US9196615B2 (en) 2005-05-09 2015-11-24 Nantero Inc. Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same
US8102018B2 (en) 2005-05-09 2012-01-24 Nantero Inc. Nonvolatile resistive memories having scalable two-terminal nanotube switches
US7781862B2 (en) * 2005-05-09 2010-08-24 Nantero, Inc. Two-terminal nanotube devices and systems and methods of making same
US8183665B2 (en) * 2005-11-15 2012-05-22 Nantero Inc. Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same
US7835170B2 (en) 2005-05-09 2010-11-16 Nantero, Inc. Memory elements and cross point switches and arrays of same using nonvolatile nanotube blocks
US9911743B2 (en) 2005-05-09 2018-03-06 Nantero, Inc. Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same
US7479654B2 (en) * 2005-05-09 2009-01-20 Nantero, Inc. Memory arrays using nanotube articles with reprogrammable resistance
US8008745B2 (en) 2005-05-09 2011-08-30 Nantero, Inc. Latch circuits and operation circuits having scalable nonvolatile nanotube switches as electronic fuse replacement elements
US7928521B1 (en) 2005-05-31 2011-04-19 Nantero, Inc. Non-tensioned carbon nanotube switch design and process for making same
US7915122B2 (en) 2005-06-08 2011-03-29 Nantero, Inc. Self-aligned cell integration scheme
US7541216B2 (en) 2005-06-09 2009-06-02 Nantero, Inc. Method of aligning deposited nanotubes onto an etched feature using a spacer
US7638382B2 (en) 2005-08-11 2009-12-29 Kabushiki Kaisha Toshiba Storage apparatus and manufacturing method thereof
CA2621500A1 (en) 2005-09-06 2007-03-15 Nantero, Inc. Carbon nanotube resonators
KR100695167B1 (ko) * 2006-01-04 2007-03-14 삼성전자주식회사 다중벽 탄소나노튜브를 이용한 불휘발성 탄소나노튜브메모리 소자 및 그 동작방법
CN101542631B (zh) * 2006-08-08 2012-06-20 南泰若股份有限公司 具有可缩放双端子纳米管开关的非易失性阻性存储器、闩锁电路和工作电路
KR101169499B1 (ko) * 2006-08-08 2012-07-27 난테로 인크. 비휘발성 나노튜브 블록을 사용한 메모리 소자 및 교차점 스위치와 이들 어레이
US8115187B2 (en) 2007-05-22 2012-02-14 Nantero, Inc. Triodes using nanofabric articles and methods of making the same
US20080296662A1 (en) 2007-05-30 2008-12-04 Gerhard Poeppel Discrete Trap Memory (DTM) Mediated by Fullerenes
WO2009002748A1 (en) 2007-06-22 2008-12-31 Nantero, Inc. Two-terminal nanotube devices including a nanotube bridge and methods of making same
WO2009155359A1 (en) 2008-06-20 2009-12-23 Nantero, Inc. Nram arrays with nanotube blocks, nanotube traces, and nanotube planes and methods of making same
US7847588B2 (en) 2008-08-14 2010-12-07 Nantero, Inc. Nonvolatile nanotube programmable logic devices and a nonvolatile nanotube field programmable gate array using same
US9263126B1 (en) 2010-09-01 2016-02-16 Nantero Inc. Method for dynamically accessing and programming resistive change element arrays
US7915637B2 (en) 2008-11-19 2011-03-29 Nantero, Inc. Switching materials comprising mixed nanoscopic particles and carbon nanotubes and method of making and using the same
WO2010062127A2 (en) * 2008-11-27 2010-06-03 Ewha University-Industry Collaboration Foundation Nanoparticle assembly-based switching device
US8351239B2 (en) 2009-10-23 2013-01-08 Nantero Inc. Dynamic sense current supply circuit and associated method for reading and characterizing a resistive memory array
US8222704B2 (en) 2009-12-31 2012-07-17 Nantero, Inc. Compact electrical switching devices with nanotube elements, and methods of making same
US9362390B2 (en) 2010-02-22 2016-06-07 Nantero, Inc. Logic elements comprising carbon nanotube field effect transistor (CNTFET) devices and methods of making same
US8130569B1 (en) * 2010-04-27 2012-03-06 The United States Of America As Represented By The United States Department Of Energy Nanoparticle shuttle memory
EP2557569A1 (de) * 2011-08-10 2013-02-13 Thomson Licensing Feldprogrammierbare Festwertspeichervorrichtung
US9624973B2 (en) 2012-03-19 2017-04-18 Samsung Electronics Co., Ltd. Apparatus having friction preventing function and method of manufacturing the same
JP2016531031A (ja) * 2014-07-31 2016-10-06 華為技術有限公司Ｈｕａｗｅｉ Ｔｅｃｈｎｏｌｏｇｉｅｓ Ｃｏ．，Ｌｔｄ． 粒子を含む垂直配向ナノチューブアレイのアセンブリ及びその用途
US9299430B1 (en) 2015-01-22 2016-03-29 Nantero Inc. Methods for reading and programming 1-R resistive change element arrays

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0591595A1 (de) * 1992-10-08 1994-04-13 International Business Machines Corporation Molekulare Aufzeichnungs-/Wiedergabemethode und Aufzeichnungsmedium
US5641466A (en) 1993-06-03 1997-06-24 Nec Corporation Method of purifying carbon nanotubes
JP2595903B2 (ja) 1994-07-05 1997-04-02 日本電気株式会社 液相におけるカーボン・ナノチューブの精製・開口方法および官能基の導入方法
US5780101A (en) 1995-02-17 1998-07-14 Arizona Board Of Regents On Behalf Of The University Of Arizona Method for producing encapsulated nanoparticles and carbon nanotubes using catalytic disproportionation of carbon monoxide
US5753088A (en) 1997-02-18 1998-05-19 General Motors Corporation Method for making carbon nanotubes
ATE299474T1 (de) * 1997-03-07 2005-07-15 Univ Rice William M Kohlenstofffasern ausgehend von einwandigen kohlenstoffnanoröhren
JP3902883B2 (ja) * 1998-03-27 2007-04-11 キヤノン株式会社 ナノ構造体及びその製造方法
DE19917848C2 (de) * 1999-04-15 2002-11-14 Inst Molekulare Biotechnologie Nanoaktorische Vorrichtung und deren Verwendung
US6208553B1 (en) * 1999-07-01 2001-03-27 The Regents Of The University Of California High density non-volatile memory device incorporating thiol-derivatized porphyrins

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AU3698100A (en) 2000-08-29
EP1157386A1 (de) 2001-11-28
US20020027819A1 (en) 2002-03-07
US6473351B2 (en) 2002-10-29
EP1157386B1 (de) 2006-05-31
ES2264928T3 (es) 2007-02-01
WO2000048195A1 (en) 2000-08-17
EP1157386A4 (de) 2004-06-30

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