DE60030805D1 - Ferroelektrischer Speicher und Halbleiterspeicher - Google Patents

Ferroelektrischer Speicher und Halbleiterspeicher

Info

Publication number
DE60030805D1
DE60030805D1 DE60030805T DE60030805T DE60030805D1 DE 60030805 D1 DE60030805 D1 DE 60030805D1 DE 60030805 T DE60030805 T DE 60030805T DE 60030805 T DE60030805 T DE 60030805T DE 60030805 D1 DE60030805 D1 DE 60030805D1
Authority
DE
Germany
Prior art keywords
memory
ferroelectric
semiconductor
semiconductor memory
ferroelectric memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60030805T
Other languages
English (en)
Other versions
DE60030805T2 (de
Inventor
Ryu Ogiwara
Daisaburo Takashima
Sumio Tanaka
Yukihito Oowaki
Yoshiaki Takeuchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Publication of DE60030805D1 publication Critical patent/DE60030805D1/de
Application granted granted Critical
Publication of DE60030805T2 publication Critical patent/DE60030805T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • Semiconductor Memories (AREA)
DE60030805T 1999-06-02 2000-06-02 Ferroelektrischer Speicher und Halbleiterspeicher Expired - Lifetime DE60030805T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP15513199 1999-06-02
JP15513199A JP4421009B2 (ja) 1999-06-02 1999-06-02 強誘電体メモリ

Publications (2)

Publication Number Publication Date
DE60030805D1 true DE60030805D1 (de) 2006-11-02
DE60030805T2 DE60030805T2 (de) 2007-09-13

Family

ID=15599241

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60030805T Expired - Lifetime DE60030805T2 (de) 1999-06-02 2000-06-02 Ferroelektrischer Speicher und Halbleiterspeicher

Country Status (6)

Country Link
US (6) US6473330B1 (de)
EP (2) EP1058268B1 (de)
JP (1) JP4421009B2 (de)
KR (1) KR100351594B1 (de)
DE (1) DE60030805T2 (de)
TW (1) TW473716B (de)

Families Citing this family (41)

* Cited by examiner, † Cited by third party
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JP4421009B2 (ja) * 1999-06-02 2010-02-24 株式会社東芝 強誘電体メモリ
US6867997B2 (en) * 2002-03-27 2005-03-15 Texas Instruments Incorporated Series feram cell array
US6590798B1 (en) * 2002-05-08 2003-07-08 Texas Instruments Incorporated Apparatus and methods for imprint reduction for ferroelectric memory cell
JP4099349B2 (ja) 2002-06-04 2008-06-11 富士通株式会社 強誘電体メモリ
US6731529B2 (en) * 2002-06-04 2004-05-04 Infineon Technologies Aktiengesellschaft Variable capacitances for memory cells within a cell group
TW594736B (en) * 2003-04-17 2004-06-21 Macronix Int Co Ltd Over-driven read method and device of ferroelectric memory
US7349237B2 (en) * 2003-07-02 2008-03-25 Texas Instruments Incorporated Plateline driver with RAMP rate control
US7002835B2 (en) * 2003-07-14 2006-02-21 Seiko Epson Corporation Memory cell and semiconductor memory device
JP3990334B2 (ja) 2003-09-12 2007-10-10 株式会社東芝 半導体集積回路装置およびその動作方法
KR100597629B1 (ko) * 2003-12-22 2006-07-07 삼성전자주식회사 강유전체 메모리 장치 및 그에 따른 구동방법
WO2005090971A1 (en) * 2004-03-18 2005-09-29 Applied Research Systems Ars Holding N.V. Anti-lipid rafts antibodies
US7298640B2 (en) * 2004-05-03 2007-11-20 Symetrix Corporation 1T1R resistive memory array with chained structure
JP4160547B2 (ja) 2004-09-28 2008-10-01 株式会社東芝 半導体記憶装置
JP2006332335A (ja) * 2005-05-26 2006-12-07 Toshiba Corp 半導体記憶装置
KR100682218B1 (ko) * 2005-05-30 2007-02-12 주식회사 하이닉스반도체 비휘발성 반도체 메모리 장치
KR100732276B1 (ko) * 2005-05-30 2007-06-25 주식회사 하이닉스반도체 불휘발성 강유전체 메모리를 포함하는 ｒｆｉｄ 장치
JP4186119B2 (ja) * 2005-07-27 2008-11-26 セイコーエプソン株式会社 強誘電体メモリ装置
JP4887853B2 (ja) * 2006-03-17 2012-02-29 富士通セミコンダクター株式会社 半導体記憶装置
JP2008171525A (ja) * 2007-01-15 2008-07-24 Toshiba Corp 半導体記憶装置
JP4901515B2 (ja) * 2007-02-07 2012-03-21 株式会社東芝 強誘電体半導体記憶装置
US7580304B2 (en) * 2007-06-15 2009-08-25 United Memories, Inc. Multiple bus charge sharing
CN102084177B (zh) 2008-05-05 2013-04-10 3M创新有限公司 光源模块
US7969812B2 (en) * 2009-07-13 2011-06-28 Seagate Technology Llc Semiconductor control line address decoding circuit
DE102010007629B4 (de) * 2010-02-11 2013-08-14 Texas Instruments Deutschland Gmbh Integrierte Schaltung mit einem FRAM-Speicher und Verfahren zum Gewähren eines Lesezugriffs auf einen FRAM-Speicher
US8315081B2 (en) 2010-03-22 2012-11-20 Qualcomm Incorporated Memory cell that includes multiple non-volatile memories
FR2965662A1 (fr) * 2010-09-30 2012-04-06 St Microelectronics Sa Circuit d'aide a la lecture pour un dispositif memoire
KR101153814B1 (ko) 2010-09-30 2012-06-14 에스케이하이닉스 주식회사 상변화 메모리 소자
KR101430415B1 (ko) * 2012-06-09 2014-08-14 서울대학교산학협력단 게이트 다이오드 구조를 갖는 메모리 셀 스트링 및 이를 이용한 메모리 어레이
US9361965B2 (en) * 2013-10-11 2016-06-07 Texas Instruments Incorporated Circuit and method for imprint reduction in FRAM memories
US9533598B2 (en) * 2014-08-29 2017-01-03 Ford Global Technologies, Llc Method for battery state of charge estimation
US9406355B1 (en) * 2015-06-16 2016-08-02 National Tsing Hua University Sense amplifier
US10083731B2 (en) * 2016-03-11 2018-09-25 Micron Technology, Inc Memory cell sensing with storage component isolation
US9851914B2 (en) * 2016-03-24 2017-12-26 Texas Instruments Incorporated Random number generation in ferroelectric random access memory (FRAM)
US9899073B2 (en) * 2016-06-27 2018-02-20 Micron Technology, Inc. Multi-level storage in ferroelectric memory
US9613676B1 (en) 2016-06-29 2017-04-04 Micron Technology, Inc. Writing to cross-point non-volatile memory
US9786349B1 (en) * 2016-07-01 2017-10-10 Micron Technology, Inc. Cell performance recovery using cycling techniques
US10418084B2 (en) 2017-02-07 2019-09-17 Micron Technology, Inc. Pre-writing memory cells of an array
US10679687B2 (en) 2017-08-22 2020-06-09 Micron Technology, Inc. Memory cells and arrays of memory cells
JP7313853B2 (ja) * 2019-03-22 2023-07-25 キオクシア株式会社 半導体メモリ
TWI744009B (zh) * 2020-09-25 2021-10-21 華邦電子股份有限公司 記憶體裝置
US11676649B2 (en) * 2021-07-22 2023-06-13 Micron Technology, Inc. Sense timing coordination for memory

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JPS57130291A (en) * 1981-02-05 1982-08-12 Toshiba Corp Semiconductor nonvolatile read-only storage device
JPS57130292A (en) * 1981-02-05 1982-08-12 Toshiba Corp Semiconductor nonvolatile read-only storage device
EP0293798B2 (de) 1987-06-02 1998-12-30 National Semiconductor Corporation Nichtflüchtige Speicheranordnung mit einem kapazitiven ferroelektrischen Speicherelement
US4831589A (en) * 1988-01-20 1989-05-16 Ict International Cmos Technology, Inc. EEPROM programming switch operable at low VCC
US5381364A (en) 1993-06-24 1995-01-10 Ramtron International Corporation Ferroelectric-based RAM sensing scheme including bit-line capacitance isolation
JPH09120685A (ja) * 1995-10-24 1997-05-06 Sony Corp 強誘電体記憶装置
DE19724449B4 (de) 1996-06-10 2004-04-22 Kabushiki Kaisha Toshiba, Kawasaki Halbleiterspeichereinrichtung
US6094370A (en) * 1996-06-10 2000-07-25 Kabushiki Kaisha Toshiba Semiconductor memory device and various systems mounting them
JP3766181B2 (ja) 1996-06-10 2006-04-12 株式会社東芝 半導体記憶装置とそれを搭載したシステム
JP3961651B2 (ja) 1997-12-16 2007-08-22 株式会社東芝 半導体記憶装置
IT1308465B1 (it) * 1999-04-30 2001-12-17 St Microelectronics Srl Struttura di cella di memoriadi tipo impilato, in particolare cellaferroelettrica
JP4421009B2 (ja) * 1999-06-02 2010-02-24 株式会社東芝 強誘電体メモリ
FR2802734B1 (fr) * 1999-12-15 2002-04-26 St Microelectronics Sa Procede de correction d'un bit dans une chaine de bits
JP4047531B2 (ja) * 2000-10-17 2008-02-13 株式会社東芝 強誘電体メモリ装置
US7002842B2 (en) * 2003-11-26 2006-02-21 Intel Corporation Floating-body dynamic random access memory with purge line

Also Published As

Publication number Publication date
KR20010007206A (ko) 2001-01-26
KR100351594B1 (ko) 2002-09-11
EP1058268A3 (de) 2001-01-24
US6552922B2 (en) 2003-04-22
US7057917B2 (en) 2006-06-06
EP1058268A2 (de) 2000-12-06
JP4421009B2 (ja) 2010-02-24
EP1058268B1 (de) 2006-09-20
EP1475804A3 (de) 2007-10-10
US7295456B2 (en) 2007-11-13
US20040136225A1 (en) 2004-07-15
TW473716B (en) 2002-01-21
US6473330B1 (en) 2002-10-29
US20060193162A1 (en) 2006-08-31
JP2000339973A (ja) 2000-12-08
US20030128572A1 (en) 2003-07-10
US6671200B2 (en) 2003-12-30
US20020196656A1 (en) 2002-12-26
EP1475804A2 (de) 2004-11-10
US20080285327A1 (en) 2008-11-20
DE60030805T2 (de) 2007-09-13

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