DE60032411D1 - Optisches Verfahren zum Messen von Schichtdicken und anderen Oberflächeneigenschaften von Gegenständen wie Halbleiterscheiben - Google Patents
Optisches Verfahren zum Messen von Schichtdicken und anderen Oberflächeneigenschaften von Gegenständen wie HalbleiterscheibenInfo
- Publication number
- DE60032411D1 DE60032411D1 DE60032411T DE60032411T DE60032411D1 DE 60032411 D1 DE60032411 D1 DE 60032411D1 DE 60032411 T DE60032411 T DE 60032411T DE 60032411 T DE60032411 T DE 60032411T DE 60032411 D1 DE60032411 D1 DE 60032411D1
- Authority
- DE
- Germany
- Prior art keywords
- objects
- semiconductor wafers
- surface properties
- layer thicknesses
- optical method
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/005—Control means for lapping machines or devices
- B24B37/013—Devices or means for detecting lapping completion
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
- B24B49/02—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent
- B24B49/04—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent involving measurement of the workpiece at the place of grinding during grinding operation
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
- B24B49/12—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving optical means
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
- G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
- G01B11/0616—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating
- G01B11/0625—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating with measurement of absorption or reflection
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/47—Scattering, i.e. diffuse reflection
- G01N21/4738—Diffuse reflection, e.g. also for testing fluids, fibrous materials
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US317697 | 1999-05-24 | ||
US09/317,697 US6570662B1 (en) | 1999-05-24 | 1999-05-24 | Optical techniques for measuring layer thicknesses and other surface characteristics of objects such as semiconductor wafers |
Publications (2)
Publication Number | Publication Date |
---|---|
DE60032411D1 true DE60032411D1 (de) | 2007-02-01 |
DE60032411T2 DE60032411T2 (de) | 2007-09-27 |
Family
ID=23234867
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60032411T Expired - Lifetime DE60032411T2 (de) | 1999-05-24 | 2000-05-16 | Optisches Verfahren zum Messen von Schichtdicken und anderen Oberflächeneigenschaften von Gegenständen wie Halbleiterscheiben |
Country Status (4)
Country | Link |
---|---|
US (2) | US6570662B1 (de) |
EP (1) | EP1055903B1 (de) |
DE (1) | DE60032411T2 (de) |
TW (1) | TW577974B (de) |
Families Citing this family (28)
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US6320609B1 (en) | 1998-07-10 | 2001-11-20 | Nanometrics Incorporated | System using a polar coordinate stage and continuous image rotation to compensate for stage rotation |
US6368881B1 (en) * | 2000-02-29 | 2002-04-09 | International Business Machines Corporation | Wafer thickness control during backside grind |
DE10123470B4 (de) * | 2001-05-15 | 2010-08-19 | Carl Zeiss Jena Gmbh | Verfahren und Anordnung zur berührungslosen Ermittlung von Produkteigenschaften |
US20030045008A1 (en) * | 2001-08-31 | 2003-03-06 | Gregory Olsen | Method and apparatus for monitoring changes in the surface of a workpiece during processing |
US6842235B2 (en) * | 2001-09-28 | 2005-01-11 | Infineon Technologies North America Corp. | Optical measurement of planarized features |
IL145699A (en) * | 2001-09-30 | 2006-12-10 | Nova Measuring Instr Ltd | Method of thin film characterization |
US6866559B2 (en) | 2002-02-04 | 2005-03-15 | Kla-Tencor Technologies | Windows configurable to be coupled to a process tool or to be disposed within an opening in a polishing pad |
US6762849B1 (en) * | 2002-06-19 | 2004-07-13 | Novellus Systems, Inc. | Method for in-situ film thickness measurement and its use for in-situ control of deposited film thickness |
US6709312B2 (en) | 2002-06-26 | 2004-03-23 | Motorola, Inc. | Method and apparatus for monitoring a polishing condition of a surface of a wafer in a polishing process |
DE10319543B4 (de) * | 2003-04-30 | 2011-03-03 | Byk-Gardner Gmbh | Vorrichtung und Verfahren zur Bestimmung von Oberflächeneigenschaften |
US7295330B2 (en) * | 2003-07-11 | 2007-11-13 | Chow Peter P | Film mapping system |
US7204639B1 (en) * | 2003-09-26 | 2007-04-17 | Lam Research Corporation | Method and apparatus for thin metal film thickness measurement |
US20060176487A1 (en) * | 2004-09-27 | 2006-08-10 | William Cummings | Process control monitors for interferometric modulators |
CN101006491A (zh) * | 2004-09-27 | 2007-07-25 | Idc公司 | 测量和建模显示器中的功率消耗 |
CN101258387A (zh) | 2005-07-05 | 2008-09-03 | 马特森技术公司 | 确定半导体晶片的光学属性的方法与系统 |
KR100836501B1 (ko) * | 2005-10-11 | 2008-06-09 | 동부일렉트로닉스 주식회사 | 반도체 소자의 박막 제조 장비 |
US8231251B2 (en) * | 2005-10-28 | 2012-07-31 | Philips Lumileds Lighting Company Llc | Multiple piece reflective angle transformer |
US7543981B2 (en) * | 2006-06-29 | 2009-06-09 | Mattson Technology, Inc. | Methods for determining wafer temperature |
CN102490112B (zh) * | 2006-10-06 | 2015-03-25 | 株式会社荏原制作所 | 加工终点检测方法、研磨方法及研磨装置 |
US20100096553A1 (en) * | 2008-10-22 | 2010-04-22 | Honeywell International Inc. | Reflective optical sensor and switches and systems therefrom |
DE102011101934B4 (de) * | 2011-05-18 | 2017-07-06 | Christian-Albrechts-Universität Zu Kiel | Großflächiger Biofilmsensor |
US8917398B2 (en) | 2011-08-28 | 2014-12-23 | G & D Innovative Analysis Ltd. | Method and apparatus for supervision of optical material production |
US9360302B2 (en) | 2011-12-15 | 2016-06-07 | Kla-Tencor Corporation | Film thickness monitor |
WO2015165503A1 (en) * | 2014-04-29 | 2015-11-05 | Hewlett-Packard Indigo B.V. | Transparent layer thickness measurement |
DE102016116012A1 (de) * | 2016-08-29 | 2018-03-01 | Lapmaster Wolters Gmbh | Verfahren zum Messen der Dicke von flachen Werkstücken |
KR102421732B1 (ko) * | 2018-04-20 | 2022-07-18 | 삼성전자주식회사 | 반도체 기판 측정 장치 및 이를 이용한 플라즈마 처리 장치 |
TWI694181B (zh) * | 2018-08-29 | 2020-05-21 | 陳嘉朗 | 變頻極化拋光裝置及方法 |
CN111469047B (zh) * | 2020-04-14 | 2021-06-25 | 大连理工大学 | 一种在线检测抛光垫接触特征的试验装置及其使用方法 |
Family Cites Families (51)
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AT351295B (de) | 1977-12-09 | 1979-07-10 | Vianova Kunstharz Ag | Anordnung zur messung des glanzvermoegens von oberflaechen, insbesondere organischer ueberzuege |
US4293224A (en) | 1978-12-04 | 1981-10-06 | International Business Machines Corporation | Optical system and technique for unambiguous film thickness monitoring |
JPS62190728A (ja) | 1986-02-18 | 1987-08-20 | Nippon Telegr & Teleph Corp <Ntt> | エツチング終点モニタ法および装置 |
US4927485A (en) | 1988-07-28 | 1990-05-22 | Applied Materials, Inc. | Laser interferometer system for monitoring and controlling IC processing |
EP0412728A3 (en) | 1989-08-11 | 1991-04-10 | American Telephone And Telegraph Company | Interferometric method and apparatus for controlling film thickness |
US5769540A (en) | 1990-04-10 | 1998-06-23 | Luxtron Corporation | Non-contact optical techniques for measuring surface conditions |
US5166080A (en) | 1991-04-29 | 1992-11-24 | Luxtron Corporation | Techniques for measuring the thickness of a film formed on a substrate |
US5208644A (en) | 1990-05-18 | 1993-05-04 | Xinix, Inc. | Interference removal |
US5196285A (en) | 1990-05-18 | 1993-03-23 | Xinix, Inc. | Method for control of photoresist develop processes |
USRE34425E (en) | 1990-08-06 | 1993-11-02 | Micron Technology, Inc. | Method and apparatus for mechanical planarization and endpoint detection of a semiconductor wafer |
US5138149A (en) | 1990-09-05 | 1992-08-11 | Xinix, Inc. | Apparatus and method for monitoring radiant energy signals with variable signal gain and resolution enhancement |
US5190614A (en) | 1990-09-05 | 1993-03-02 | Luxtron Corporation | Method of endpoint detection and structure therefor |
US5166525A (en) | 1991-02-11 | 1992-11-24 | Xinix, Inc. | Through the wafer optical transmission sensor |
WO1993025893A1 (en) | 1992-06-09 | 1993-12-23 | Luxtron Corporation | Endpoint detection technique using signal slope determinations |
US5308447A (en) | 1992-06-09 | 1994-05-03 | Luxtron Corporation | Endpoint and uniformity determinations in material layer processing through monitoring multiple surface regions across the layer |
US5486701A (en) | 1992-06-16 | 1996-01-23 | Prometrix Corporation | Method and apparatus for measuring reflectance in two wavelength bands to enable determination of thin film thickness |
US5499733A (en) | 1992-09-17 | 1996-03-19 | Luxtron Corporation | Optical techniques of measuring endpoint during the processing of material layers in an optically hostile environment |
US5362969A (en) | 1993-04-23 | 1994-11-08 | Luxtron Corporation | Processing endpoint detecting technique and detector structure using multiple radiation sources or discrete detectors |
US5564830A (en) | 1993-06-03 | 1996-10-15 | Fraunhofer Gesellschaft Zur Forderung Der Angewandten Forschung E.V. | Method and arrangement for determining the layer-thickness and the substrate temperature during coating |
US5416594A (en) | 1993-07-20 | 1995-05-16 | Tencor Instruments | Surface scanner with thin film gauge |
US5700180A (en) | 1993-08-25 | 1997-12-23 | Micron Technology, Inc. | System for real-time control of semiconductor wafer polishing |
US5433651A (en) | 1993-12-22 | 1995-07-18 | International Business Machines Corporation | In-situ endpoint detection and process monitoring method and apparatus for chemical-mechanical polishing |
WO1995018353A1 (en) | 1993-12-28 | 1995-07-06 | Tang Wallace T Y | Method and apparatus for monitoring thin films |
JP2856666B2 (ja) | 1993-12-28 | 1999-02-10 | 大日本スクリーン製造株式会社 | 半導体ウェハの絶縁膜厚測定方法 |
JP3313505B2 (ja) | 1994-04-14 | 2002-08-12 | 株式会社日立製作所 | 研磨加工法 |
US5475221A (en) | 1994-05-11 | 1995-12-12 | Brimrose Corporation Of America | Optical spectrometer using light emitting diode array |
US5717608A (en) | 1994-09-26 | 1998-02-10 | Luxtron Corporation | Electro-optical board assembly for measuring the temperature of an object surface from infra-red emissions thereof, including an automatic gain control therefore |
US5835225A (en) | 1994-11-30 | 1998-11-10 | Micron Technology, Inc. | Surface properties detection by reflectance metrology |
US5555474A (en) | 1994-12-21 | 1996-09-10 | Integrated Process Equipment Corp. | Automatic rejection of diffraction effects in thin film metrology |
US5608526A (en) | 1995-01-19 | 1997-03-04 | Tencor Instruments | Focused beam spectroscopic ellipsometry method and system |
JPH08316279A (ja) | 1995-02-14 | 1996-11-29 | Internatl Business Mach Corp <Ibm> | 半導体基体の厚さ測定方法及びその測定装置 |
US5825495A (en) * | 1995-02-27 | 1998-10-20 | Lockheed Martin Corporation | Bright field illumination system |
US5625459A (en) * | 1995-03-03 | 1997-04-29 | Galileo Electro-Optics Corporation | Diffuse reflectance probe |
DE69632490T2 (de) | 1995-03-28 | 2005-05-12 | Applied Materials, Inc., Santa Clara | Verfahren und Vorrichtung zur In-Situ-Kontrolle und Bestimmung des Endes von chemisch-mechanischen Planiervorgängen |
US5893796A (en) | 1995-03-28 | 1999-04-13 | Applied Materials, Inc. | Forming a transparent window in a polishing pad for a chemical mechanical polishing apparatus |
EP0735565B1 (de) | 1995-03-31 | 1999-06-02 | International Business Machines Corporation | Verfahren und Gerät zur Überwachung des Trockenätzens eines dielektrischen Films bis zu einer gegebenen Dicke |
US5659397A (en) | 1995-06-08 | 1997-08-19 | Az Technology | Method and apparatus for measuring total specular and diffuse optical properties from the surface of an object |
JPH08339982A (ja) | 1995-06-13 | 1996-12-24 | Toshiba Corp | 半導体製造装置及び半導体装置の製造方法 |
US5828460A (en) * | 1995-07-11 | 1998-10-27 | S.Q.C.C. Ltd. | Apparatus for optical inspection of metallic surfaces |
US5838447A (en) | 1995-07-20 | 1998-11-17 | Ebara Corporation | Polishing apparatus including thickness or flatness detector |
GB2304187B (en) * | 1995-08-07 | 1998-12-30 | Dia Stron Ltd | Translucency measurement |
US5926262A (en) | 1997-07-01 | 1999-07-20 | Lj Laboratories, L.L.C. | Apparatus and method for measuring optical characteristics of an object |
US5662360A (en) | 1996-01-05 | 1997-09-02 | S&B Technical Products, Inc. | Interlocked restraint for a plastic pipe joining system |
US6010538A (en) | 1996-01-11 | 2000-01-04 | Luxtron Corporation | In situ technique for monitoring and controlling a process of chemical-mechanical-polishing via a radiative communication link |
US5640242A (en) | 1996-01-31 | 1997-06-17 | International Business Machines Corporation | Assembly and method for making in process thin film thickness measurments |
US5663797A (en) | 1996-05-16 | 1997-09-02 | Micron Technology, Inc. | Method and apparatus for detecting the endpoint in chemical-mechanical polishing of semiconductor wafers |
US5872633A (en) | 1996-07-26 | 1999-02-16 | Speedfam Corporation | Methods and apparatus for detecting removal of thin film layers during planarization |
JPH10166262A (ja) | 1996-12-10 | 1998-06-23 | Nikon Corp | 研磨装置 |
US5838448A (en) | 1997-03-11 | 1998-11-17 | Nikon Corporation | CMP variable angle in situ sensor |
US6406641B1 (en) | 1997-06-17 | 2002-06-18 | Luxtron Corporation | Liquid etch endpoint detection and process metrology |
EP1034425A1 (de) | 1997-10-31 | 2000-09-13 | Technical Chemical & Products Inc. | Remissionsmessgerät |
-
1999
- 1999-05-24 US US09/317,697 patent/US6570662B1/en not_active Expired - Lifetime
-
2000
- 2000-03-09 TW TW089101133A patent/TW577974B/zh not_active IP Right Cessation
- 2000-05-16 DE DE60032411T patent/DE60032411T2/de not_active Expired - Lifetime
- 2000-05-16 EP EP00304118A patent/EP1055903B1/de not_active Expired - Lifetime
- 2000-05-24 US US09/577,795 patent/US6654132B1/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
DE60032411T2 (de) | 2007-09-27 |
US6570662B1 (en) | 2003-05-27 |
EP1055903B1 (de) | 2006-12-20 |
TW577974B (en) | 2004-03-01 |
US6654132B1 (en) | 2003-11-25 |
EP1055903A1 (de) | 2000-11-29 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |