DE60036286D1 - Oberflächenbehandlung eines soi substrats mittels eines epitaxie-verfahrens - Google Patents
Oberflächenbehandlung eines soi substrats mittels eines epitaxie-verfahrensInfo
- Publication number
- DE60036286D1 DE60036286D1 DE60036286T DE60036286T DE60036286D1 DE 60036286 D1 DE60036286 D1 DE 60036286D1 DE 60036286 T DE60036286 T DE 60036286T DE 60036286 T DE60036286 T DE 60036286T DE 60036286 D1 DE60036286 D1 DE 60036286D1
- Authority
- DE
- Germany
- Prior art keywords
- hydrogen
- epitaxis
- procedure
- surface treatment
- soi substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000000034 method Methods 0.000 title abstract 3
- 239000000758 substrate Substances 0.000 title abstract 3
- 238000004381 surface treatment Methods 0.000 title 1
- 239000001257 hydrogen Substances 0.000 abstract 4
- 229910052739 hydrogen Inorganic materials 0.000 abstract 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract 3
- 125000004435 hydrogen atom Chemical group [H]* 0.000 abstract 2
- 230000003746 surface roughness Effects 0.000 abstract 2
- 238000007669 thermal treatment Methods 0.000 abstract 2
- 239000007789 gas Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
- H01L21/2003—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy characterised by the substrate
- H01L21/2007—Bonding of semiconductor wafers to insulating substrates or to semiconducting substrates using an intermediate insulating layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
- H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/967—Semiconductor on specified insulator
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13042399P | 1999-04-21 | 1999-04-21 | |
US130423P | 1999-04-21 | ||
US09/399,985 US6287941B1 (en) | 1999-04-21 | 1999-09-20 | Surface finishing of SOI substrates using an EPI process |
US399985 | 1999-09-20 | ||
PCT/US2000/010872 WO2000063954A1 (en) | 1999-04-21 | 2000-04-20 | Surface finishing of soi substrates using an epi process |
Publications (2)
Publication Number | Publication Date |
---|---|
DE60036286D1 true DE60036286D1 (de) | 2007-10-18 |
DE60036286T2 DE60036286T2 (de) | 2008-06-05 |
Family
ID=26828477
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60036286T Expired - Lifetime DE60036286T2 (de) | 1999-04-21 | 2000-04-20 | Oberflächenbehandlung eines soi substrats mittels eines epitaxie-verfahrens |
Country Status (8)
Country | Link |
---|---|
US (3) | US6287941B1 (de) |
EP (2) | EP1887616A3 (de) |
JP (1) | JP2002542622A (de) |
KR (2) | KR100709689B1 (de) |
AT (1) | ATE372590T1 (de) |
AU (1) | AU4483300A (de) |
DE (1) | DE60036286T2 (de) |
WO (1) | WO2000063954A1 (de) |
Families Citing this family (89)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6155909A (en) | 1997-05-12 | 2000-12-05 | Silicon Genesis Corporation | Controlled cleavage system using pressurized fluid |
US20070122997A1 (en) | 1998-02-19 | 2007-05-31 | Silicon Genesis Corporation | Controlled process and resulting device |
US6881644B2 (en) * | 1999-04-21 | 2005-04-19 | Silicon Genesis Corporation | Smoothing method for cleaved films made using a release layer |
US6171965B1 (en) | 1999-04-21 | 2001-01-09 | Silicon Genesis Corporation | Treatment method of cleaved film for the manufacture of substrates |
US6287941B1 (en) | 1999-04-21 | 2001-09-11 | Silicon Genesis Corporation | Surface finishing of SOI substrates using an EPI process |
FR2797713B1 (fr) * | 1999-08-20 | 2002-08-02 | Soitec Silicon On Insulator | Procede de traitement de substrats pour la microelectronique et substrats obtenus par ce procede |
US6489241B1 (en) * | 1999-09-17 | 2002-12-03 | Applied Materials, Inc. | Apparatus and method for surface finishing a silicon film |
US6406982B2 (en) * | 2000-06-05 | 2002-06-18 | Denso Corporation | Method of improving epitaxially-filled trench by smoothing trench prior to filling |
US8507361B2 (en) * | 2000-11-27 | 2013-08-13 | Soitec | Fabrication of substrates with a useful layer of monocrystalline semiconductor material |
WO2002052643A2 (en) * | 2000-12-27 | 2002-07-04 | Memc Electronic Materials, Inc. | Semiconductor wafer manufacturing process |
US20020158046A1 (en) * | 2001-04-27 | 2002-10-31 | Chi Wu | Formation of an optical component |
US20020158047A1 (en) * | 2001-04-27 | 2002-10-31 | Yiqiong Wang | Formation of an optical component having smooth sidewalls |
FR2828762B1 (fr) * | 2001-08-14 | 2003-12-05 | Soitec Silicon On Insulator | Procede d'obtention d'une couche mince d'un materiau semi-conducteur supportant au moins un composant et/ou circuit electronique |
KR100434914B1 (ko) * | 2001-10-19 | 2004-06-09 | 주식회사 실트론 | 고품질 웨이퍼 및 그의 제조방법 |
US6746933B1 (en) * | 2001-10-26 | 2004-06-08 | International Business Machines Corporation | Pitcher-shaped active area for field effect transistor and method of forming same |
WO2003046993A1 (fr) * | 2001-11-29 | 2003-06-05 | Shin-Etsu Handotai Co.,Ltd. | Procede de production de plaquettes soi |
FR2839385B1 (fr) * | 2002-05-02 | 2004-07-23 | Soitec Silicon On Insulator | Procede de decollement de couches de materiau |
FR2874455B1 (fr) * | 2004-08-19 | 2008-02-08 | Soitec Silicon On Insulator | Traitement thermique avant collage de deux plaquettes |
WO2003098695A1 (fr) * | 2002-05-20 | 2003-11-27 | Sumitomo Mitsubishi Silicon Corporation | Substrat stratifie, procede de fabrication de substrat, et gabarit de pressage de peripherie externe de plaquettes utilises dans ce procede |
FR2842650B1 (fr) * | 2002-07-17 | 2005-09-02 | Soitec Silicon On Insulator | Procede de fabrication de substrats notamment pour l'optique, l'electronique ou l'opto-electronique |
KR100511656B1 (ko) * | 2002-08-10 | 2005-09-07 | 주식회사 실트론 | 나노 에스오아이 웨이퍼의 제조방법 및 그에 따라 제조된나노 에스오아이 웨이퍼 |
US6921490B1 (en) | 2002-09-06 | 2005-07-26 | Kotura, Inc. | Optical component having waveguides extending from a common region |
US6774040B2 (en) * | 2002-09-12 | 2004-08-10 | Applied Materials, Inc. | Apparatus and method for surface finishing a silicon film |
US6638872B1 (en) | 2002-09-26 | 2003-10-28 | Motorola, Inc. | Integration of monocrystalline oxide devices with fully depleted CMOS on non-silicon substrates |
JP2004119943A (ja) * | 2002-09-30 | 2004-04-15 | Renesas Technology Corp | 半導体ウェハおよびその製造方法 |
US20040060899A1 (en) * | 2002-10-01 | 2004-04-01 | Applied Materials, Inc. | Apparatuses and methods for treating a silicon film |
GB2409340B (en) * | 2002-10-04 | 2006-05-10 | Silicon Genesis Corp | Method for treating semiconductor material |
US8187377B2 (en) * | 2002-10-04 | 2012-05-29 | Silicon Genesis Corporation | Non-contact etch annealing of strained layers |
US6770504B2 (en) * | 2003-01-06 | 2004-08-03 | Honeywell International Inc. | Methods and structure for improving wafer bow control |
US6888233B2 (en) * | 2003-03-10 | 2005-05-03 | Honeywell International Inc. | Systems for buried electrical feedthroughs in a glass-silicon MEMS process |
US20040191559A1 (en) * | 2003-03-26 | 2004-09-30 | Bustamante Anthony T. | Method and apparatus for strengthening steel and cast iron parts |
FR2853991B1 (fr) * | 2003-04-17 | 2005-10-28 | Soitec Silicon On Insulator | Procede de traitement de substrats demontables, et substrat intermediaire demontable, avec polissage perfectionne |
JP2005129825A (ja) * | 2003-10-27 | 2005-05-19 | Sumitomo Chemical Co Ltd | 化合物半導体基板の製造方法 |
US7542197B2 (en) * | 2003-11-01 | 2009-06-02 | Silicon Quest Kabushiki-Kaisha | Spatial light modulator featured with an anti-reflective structure |
US7748344B2 (en) * | 2003-11-06 | 2010-07-06 | Axcelis Technologies, Inc. | Segmented resonant antenna for radio frequency inductively coupled plasmas |
US7421973B2 (en) * | 2003-11-06 | 2008-09-09 | Axcelis Technologies, Inc. | System and method for performing SIMOX implants using an ion shower |
US7935613B2 (en) * | 2003-12-16 | 2011-05-03 | International Business Machines Corporation | Three-dimensional silicon on oxide device isolation |
US7390724B2 (en) * | 2004-04-12 | 2008-06-24 | Silicon Genesis Corporation | Method and system for lattice space engineering |
US20050247668A1 (en) * | 2004-05-06 | 2005-11-10 | Silicon Genesis Corporation | Method for smoothing a film of material using a ring structure |
US7094666B2 (en) * | 2004-07-29 | 2006-08-22 | Silicon Genesis Corporation | Method and system for fabricating strained layers for the manufacture of integrated circuits |
EP1894234B1 (de) * | 2005-02-28 | 2021-11-03 | Silicon Genesis Corporation | Substratversteifungsverfahren und System für eine Schichtübertragung. |
TW200703462A (en) * | 2005-04-13 | 2007-01-16 | Univ California | Wafer separation technique for the fabrication of free-standing (Al, In, Ga)N wafers |
US7749863B1 (en) * | 2005-05-12 | 2010-07-06 | Hrl Laboratories, Llc | Thermal management substrates |
US7462552B2 (en) * | 2005-05-23 | 2008-12-09 | Ziptronix, Inc. | Method of detachable direct bonding at low temperatures |
US7674687B2 (en) * | 2005-07-27 | 2010-03-09 | Silicon Genesis Corporation | Method and structure for fabricating multiple tiled regions onto a plate using a controlled cleaving process |
US7166520B1 (en) * | 2005-08-08 | 2007-01-23 | Silicon Genesis Corporation | Thin handle substrate method and structure for fabricating devices using one or more films provided by a layer transfer process |
US20070029043A1 (en) * | 2005-08-08 | 2007-02-08 | Silicon Genesis Corporation | Pre-made cleavable substrate method and structure of fabricating devices using one or more films provided by a layer transfer process |
US7427554B2 (en) * | 2005-08-12 | 2008-09-23 | Silicon Genesis Corporation | Manufacturing strained silicon substrates using a backing material |
US7863157B2 (en) * | 2006-03-17 | 2011-01-04 | Silicon Genesis Corporation | Method and structure for fabricating solar cells using a layer transfer process |
US7598153B2 (en) * | 2006-03-31 | 2009-10-06 | Silicon Genesis Corporation | Method and structure for fabricating bonded substrate structures using thermal processing to remove oxygen species |
CN101512721A (zh) | 2006-04-05 | 2009-08-19 | 硅源公司 | 利用层转移工艺制造太阳能电池的方法和结构 |
JP4671900B2 (ja) * | 2006-04-06 | 2011-04-20 | パナソニック株式会社 | 接合方法および接合装置 |
US8153513B2 (en) * | 2006-07-25 | 2012-04-10 | Silicon Genesis Corporation | Method and system for continuous large-area scanning implantation process |
US7745309B2 (en) * | 2006-08-09 | 2010-06-29 | Applied Materials, Inc. | Methods for surface activation by plasma immersion ion implantation process utilized in silicon-on-insulator structure |
US8293619B2 (en) | 2008-08-28 | 2012-10-23 | Silicon Genesis Corporation | Layer transfer of films utilizing controlled propagation |
US8993410B2 (en) | 2006-09-08 | 2015-03-31 | Silicon Genesis Corporation | Substrate cleaving under controlled stress conditions |
US9362439B2 (en) | 2008-05-07 | 2016-06-07 | Silicon Genesis Corporation | Layer transfer of films utilizing controlled shear region |
US7811900B2 (en) | 2006-09-08 | 2010-10-12 | Silicon Genesis Corporation | Method and structure for fabricating solar cells using a thick layer transfer process |
EP1926130A1 (de) * | 2006-11-27 | 2008-05-28 | S.O.I.TEC. Silicon on Insulator Technologies S.A. | Verfahren zum Verbessern der Oberfläche eines Halbleitersubstrats |
EP1978554A3 (de) * | 2007-04-06 | 2011-10-12 | Semiconductor Energy Laboratory Co., Ltd. | Verfahren zur Herstellung eines Halbleitersubstrats mit Implantierungs- und Trennungsschritten. |
JP5210549B2 (ja) * | 2007-05-31 | 2013-06-12 | 株式会社半導体エネルギー研究所 | レーザアニール方法 |
JP5143477B2 (ja) | 2007-05-31 | 2013-02-13 | 信越化学工業株式会社 | Soiウエーハの製造方法 |
JP5245380B2 (ja) * | 2007-06-21 | 2013-07-24 | 信越半導体株式会社 | Soiウェーハの製造方法 |
JP5498670B2 (ja) * | 2007-07-13 | 2014-05-21 | 株式会社半導体エネルギー研究所 | 半導体基板の作製方法 |
JP5442224B2 (ja) * | 2007-07-23 | 2014-03-12 | 株式会社半導体エネルギー研究所 | Soi基板の製造方法 |
TWI437696B (zh) * | 2007-09-21 | 2014-05-11 | Semiconductor Energy Lab | 半導體裝置及其製造方法 |
JP2009094488A (ja) * | 2007-09-21 | 2009-04-30 | Semiconductor Energy Lab Co Ltd | 半導体膜付き基板の作製方法 |
JP5250228B2 (ja) * | 2007-09-21 | 2013-07-31 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
JP5452900B2 (ja) * | 2007-09-21 | 2014-03-26 | 株式会社半導体エネルギー研究所 | 半導体膜付き基板の作製方法 |
US8236668B2 (en) * | 2007-10-10 | 2012-08-07 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing SOI substrate |
TWI493609B (zh) * | 2007-10-23 | 2015-07-21 | Semiconductor Energy Lab | 半導體基板、顯示面板及顯示裝置的製造方法 |
JP5465830B2 (ja) * | 2007-11-27 | 2014-04-09 | 信越化学工業株式会社 | 貼り合わせ基板の製造方法 |
US7842583B2 (en) * | 2007-12-27 | 2010-11-30 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor substrate and method for manufacturing semiconductor device |
US20090179160A1 (en) * | 2008-01-16 | 2009-07-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor substrate manufacturing apparatus |
WO2009152368A1 (en) | 2008-06-11 | 2009-12-17 | Solar Implant Technologies Inc. | Application specific implant system and method for use in solar cell fabrications |
US8330126B2 (en) | 2008-08-25 | 2012-12-11 | Silicon Genesis Corporation | Race track configuration and method for wafering silicon solar substrates |
FR2938119B1 (fr) * | 2008-10-30 | 2011-04-22 | Soitec Silicon On Insulator | Procede de detachement de couches semi-conductrices a basse temperature |
US7927975B2 (en) | 2009-02-04 | 2011-04-19 | Micron Technology, Inc. | Semiconductor material manufacture |
US8329557B2 (en) | 2009-05-13 | 2012-12-11 | Silicon Genesis Corporation | Techniques for forming thin films by implantation with reduced channeling |
KR101651206B1 (ko) * | 2009-05-26 | 2016-08-25 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | Soi 기판의 제작 방법 |
US8749053B2 (en) | 2009-06-23 | 2014-06-10 | Intevac, Inc. | Plasma grid implant system for use in solar cell fabrications |
US8080464B2 (en) * | 2009-12-29 | 2011-12-20 | MEMC Electronics Materials, Inc, | Methods for processing silicon on insulator wafers |
FR2961948B1 (fr) * | 2010-06-23 | 2012-08-03 | Soitec Silicon On Insulator | Procede de traitement d'une piece en materiau compose |
TWI506719B (zh) | 2011-11-08 | 2015-11-01 | Intevac Inc | 基板處理系統及方法 |
US9336989B2 (en) | 2012-02-13 | 2016-05-10 | Silicon Genesis Corporation | Method of cleaving a thin sapphire layer from a bulk material by implanting a plurality of particles and performing a controlled cleaving process |
TWI570745B (zh) | 2012-12-19 | 2017-02-11 | 因特瓦克公司 | 用於電漿離子植入之柵極 |
WO2014113503A1 (en) | 2013-01-16 | 2014-07-24 | QMAT, Inc. | Techniques for forming optoelectronic devices |
CN105981132B (zh) * | 2014-02-18 | 2019-03-15 | 日本碍子株式会社 | 半导体用复合基板的操作基板及半导体用复合基板 |
JP6749394B2 (ja) | 2015-11-20 | 2020-09-02 | グローバルウェーハズ カンパニー リミテッドGlobalWafers Co.,Ltd. | 滑らかな半導体表面の製造方法 |
Family Cites Families (52)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3964957A (en) | 1973-12-19 | 1976-06-22 | Monsanto Company | Apparatus for processing semiconductor wafers |
JPS5861763A (ja) | 1981-10-09 | 1983-04-12 | 武笠 均 | 触感知器消化装置 |
US4554570A (en) * | 1982-06-24 | 1985-11-19 | Rca Corporation | Vertically integrated IGFET device |
US4906594A (en) | 1987-06-12 | 1990-03-06 | Agency Of Industrial Science And Technology | Surface smoothing method and method of forming SOI substrate using the surface smoothing method |
DE3888736T2 (de) * | 1987-06-24 | 1994-11-17 | Advanced Semiconductor Mat | Verfahren zur Epitaxieabscheidung von Silizium. |
US5141878A (en) * | 1990-04-02 | 1992-08-25 | At&T Bell Laboratories | Silicon photodiode for monolithic integrated circuits and method for making same |
US5198371A (en) | 1990-09-24 | 1993-03-30 | Biota Corp. | Method of making silicon material with enhanced surface mobility by hydrogen ion implantation |
JPH0817166B2 (ja) * | 1991-04-27 | 1996-02-21 | 信越半導体株式会社 | 超薄膜soi基板の製造方法及び製造装置 |
JPH0553852A (ja) * | 1991-08-28 | 1993-03-05 | Matsushita Electric Ind Co Ltd | テスト装置 |
FR2681472B1 (fr) * | 1991-09-18 | 1993-10-29 | Commissariat Energie Atomique | Procede de fabrication de films minces de materiau semiconducteur. |
US5198071A (en) | 1991-11-25 | 1993-03-30 | Applied Materials, Inc. | Process for inhibiting slip and microcracking while forming epitaxial layer on semiconductor wafer |
EP1043768B1 (de) * | 1992-01-30 | 2004-09-08 | Canon Kabushiki Kaisha | Herstellungsverfahren für Halbleitersubstrate |
US5213986A (en) | 1992-04-10 | 1993-05-25 | North American Philips Corporation | Process for making thin film silicon-on-insulator wafers employing wafer bonding and wafer thinning |
US5887070A (en) * | 1992-05-08 | 1999-03-23 | Etymotic Research, Inc. | High fidelity insert earphones and methods of making same |
JP2560178B2 (ja) | 1992-06-29 | 1996-12-04 | 九州電子金属株式会社 | 半導体ウェーハの製造方法 |
JPH06232141A (ja) | 1992-12-07 | 1994-08-19 | Sony Corp | 半導体基板の作成方法及び固体撮像装置の製造方法 |
US5409563A (en) | 1993-02-26 | 1995-04-25 | Micron Technology, Inc. | Method for etching high aspect ratio features |
FR2707401B1 (fr) | 1993-07-09 | 1995-08-11 | Menigaux Louis | Procédé de fabrication d'une structure intégrant un guide optique clivé à un support de fibre optique pour un couplage optique guide-fibre et structure obtenue. |
FR2714524B1 (fr) | 1993-12-23 | 1996-01-26 | Commissariat Energie Atomique | Procede de realisation d'une structure en relief sur un support en materiau semiconducteur |
US5403434A (en) * | 1994-01-06 | 1995-04-04 | Texas Instruments Incorporated | Low-temperature in-situ dry cleaning process for semiconductor wafer |
FR2715501B1 (fr) | 1994-01-26 | 1996-04-05 | Commissariat Energie Atomique | Procédé de dépôt de lames semiconductrices sur un support. |
JP3265493B2 (ja) | 1994-11-24 | 2002-03-11 | ソニー株式会社 | Soi基板の製造方法 |
US6107213A (en) | 1996-02-01 | 2000-08-22 | Sony Corporation | Method for making thin film semiconductor |
CA2172233C (en) | 1995-03-20 | 2001-01-02 | Lei Zhong | Slant-surface silicon wafer having a reconstructed atomic-level stepped surface structure |
JPH08271880A (ja) | 1995-04-03 | 1996-10-18 | Toshiba Corp | 遮光膜,液晶表示装置および遮光膜形成用材料 |
FR2738671B1 (fr) | 1995-09-13 | 1997-10-10 | Commissariat Energie Atomique | Procede de fabrication de films minces a materiau semiconducteur |
CN1132223C (zh) | 1995-10-06 | 2003-12-24 | 佳能株式会社 | 半导体衬底及其制造方法 |
US5869405A (en) | 1996-01-03 | 1999-02-09 | Micron Technology, Inc. | In situ rapid thermal etch and rapid thermal oxidation |
US6004868A (en) | 1996-01-17 | 1999-12-21 | Micron Technology, Inc. | Method for CMOS well drive in a non-inert ambient |
SG65697A1 (en) | 1996-11-15 | 1999-06-22 | Canon Kk | Process for producing semiconductor article |
US5841931A (en) | 1996-11-26 | 1998-11-24 | Massachusetts Institute Of Technology | Methods of forming polycrystalline semiconductor waveguides for optoelectronic integrated circuits, and devices formed thereby |
JP3522482B2 (ja) * | 1997-02-24 | 2004-04-26 | 三菱住友シリコン株式会社 | Soi基板の製造方法 |
CA2233115C (en) | 1997-03-27 | 2002-03-12 | Canon Kabushiki Kaisha | Semiconductor substrate and method of manufacturing the same |
JPH10275905A (ja) * | 1997-03-31 | 1998-10-13 | Mitsubishi Electric Corp | シリコンウェーハの製造方法およびシリコンウェーハ |
US6251754B1 (en) * | 1997-05-09 | 2001-06-26 | Denso Corporation | Semiconductor substrate manufacturing method |
US6155909A (en) | 1997-05-12 | 2000-12-05 | Silicon Genesis Corporation | Controlled cleavage system using pressurized fluid |
JPH10321533A (ja) * | 1997-05-22 | 1998-12-04 | Tokin Corp | ウェーハの製造方法、及び半導体装置 |
US5877070A (en) | 1997-05-31 | 1999-03-02 | Max-Planck Society | Method for the transfer of thin layers of monocrystalline material to a desirable substrate |
US5968279A (en) * | 1997-06-13 | 1999-10-19 | Mattson Technology, Inc. | Method of cleaning wafer substrates |
JP3292101B2 (ja) | 1997-07-18 | 2002-06-17 | 信越半導体株式会社 | 珪素単結晶基板表面の平滑化方法 |
JP3324469B2 (ja) | 1997-09-26 | 2002-09-17 | 信越半導体株式会社 | Soiウエーハの製造方法ならびにこの方法で製造されるsoiウエーハ |
US6171982B1 (en) | 1997-12-26 | 2001-01-09 | Canon Kabushiki Kaisha | Method and apparatus for heat-treating an SOI substrate and method of preparing an SOI substrate by using the same |
JPH11195775A (ja) | 1997-12-26 | 1999-07-21 | Sony Corp | 半導体基板および薄膜半導体素子およびそれらの製造方法ならびに陽極化成装置 |
JPH11204771A (ja) * | 1998-01-07 | 1999-07-30 | Sony Corp | 半導体基板の製造方法及び固体撮像装置の製造方法 |
US6274464B2 (en) * | 1998-02-06 | 2001-08-14 | Texas Instruments Incorporated | Epitaxial cleaning process using HCL and N-type dopant gas to reduce defect density and auto doping effects |
JP3697106B2 (ja) | 1998-05-15 | 2005-09-21 | キヤノン株式会社 | 半導体基板の作製方法及び半導体薄膜の作製方法 |
JP3358550B2 (ja) * | 1998-07-07 | 2002-12-24 | 信越半導体株式会社 | Soiウエーハの製造方法ならびにこの方法で製造されるsoiウエーハ |
EP0984483B1 (de) * | 1998-09-04 | 2006-04-05 | Canon Kabushiki Kaisha | Halbleitersubstrat und Verfahren zu seiner Herstellung |
JP4260251B2 (ja) | 1998-09-25 | 2009-04-30 | 株式会社岡本工作機械製作所 | ウエハの研磨装置 |
US6287941B1 (en) * | 1999-04-21 | 2001-09-11 | Silicon Genesis Corporation | Surface finishing of SOI substrates using an EPI process |
US6171965B1 (en) | 1999-04-21 | 2001-01-09 | Silicon Genesis Corporation | Treatment method of cleaved film for the manufacture of substrates |
US6204151B1 (en) * | 1999-04-21 | 2001-03-20 | Silicon Genesis Corporation | Smoothing method for cleaved films made using thermal treatment |
-
1999
- 1999-09-20 US US09/399,985 patent/US6287941B1/en not_active Expired - Lifetime
-
2000
- 2000-04-20 WO PCT/US2000/010872 patent/WO2000063954A1/en active IP Right Grant
- 2000-04-20 DE DE60036286T patent/DE60036286T2/de not_active Expired - Lifetime
- 2000-04-20 EP EP07016247A patent/EP1887616A3/de not_active Withdrawn
- 2000-04-20 EP EP00926275A patent/EP1194949B1/de not_active Expired - Lifetime
- 2000-04-20 KR KR1020017013384A patent/KR100709689B1/ko not_active IP Right Cessation
- 2000-04-20 AT AT00926275T patent/ATE372590T1/de not_active IP Right Cessation
- 2000-04-20 JP JP2000612989A patent/JP2002542622A/ja active Pending
- 2000-04-20 AU AU44833/00A patent/AU4483300A/en not_active Abandoned
- 2000-04-20 KR KR1020067024245A patent/KR20060126629A/ko not_active Application Discontinuation
-
2001
- 2001-06-26 US US09/893,340 patent/US7253081B2/en not_active Expired - Fee Related
-
2007
- 2007-07-11 US US11/827,523 patent/US20070259526A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
EP1194949B1 (de) | 2007-09-05 |
DE60036286T2 (de) | 2008-06-05 |
ATE372590T1 (de) | 2007-09-15 |
US20070259526A1 (en) | 2007-11-08 |
US7253081B2 (en) | 2007-08-07 |
KR100709689B1 (ko) | 2007-04-19 |
EP1887616A3 (de) | 2008-05-28 |
US20020022344A1 (en) | 2002-02-21 |
WO2000063954A1 (en) | 2000-10-26 |
US6287941B1 (en) | 2001-09-11 |
JP2002542622A (ja) | 2002-12-10 |
KR20020007377A (ko) | 2002-01-26 |
KR20060126629A (ko) | 2006-12-07 |
EP1887616A2 (de) | 2008-02-13 |
AU4483300A (en) | 2000-11-02 |
EP1194949A4 (de) | 2003-07-30 |
EP1194949A1 (de) | 2002-04-10 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE60036286D1 (de) | Oberflächenbehandlung eines soi substrats mittels eines epitaxie-verfahrens | |
TW200516673A (en) | Heat treatment fixture for semiconductor substrate, and heat treatment method for semiconductor substrate | |
FR2827078B1 (fr) | Procede de diminution de rugosite de surface | |
BRPI0410641A (pt) | processo para revestimento de substratos com material baseado em carbono | |
DE60238324D1 (de) | Waferboot und verfahren zur herstellung eines rutschsicheren waferboots | |
DK0811430T3 (da) | Vandafvisende overfladebehandling med syreaktivering | |
TW200605226A (en) | Process for titanium nitride removal | |
BR0100137A (pt) | Método de remoção de revestimento de barreira térmica | |
MY116313A (en) | Method and apparatus for heat-treating an soi substrate and method of preparing an soi substrate by using the same | |
AR013023A1 (es) | Un proceso para preparar n-(fosfonometil) glicina o una sal del mismo, | |
NO20020512D0 (no) | Enzymatisk modifisering av overflaten til en polyesterfiber eller polyestergjenstand | |
BR0214907B1 (pt) | método para fluoração de um artigo poroso, e, aparelho para fluoração de um substrato. | |
DE502007006840D1 (de) | Vorrichtung und verfahren zur steuerung der oberflächentemperatur eines substrates in einer prozesskammer | |
DE602005015298D1 (de) | Verfahren zur herstellung eines dehnbaren verbundstoffs | |
EP1473380A3 (de) | Vorrichtung und Methode zur Herstellung von Metallschichten | |
DE60005225D1 (de) | Dünnschichten aus diamantartigem glass | |
GB2346898A (en) | Deposition of a siloxane containing polymer | |
TW200746299A (en) | A method of forming an oxide layer | |
TW200632995A (en) | Single wafer dryer and drying methods | |
SG143214A1 (en) | Silicon wafer and method for manufacturing the same | |
LU90721B1 (en) | Method for producing metal foams and furnace for producing same | |
AU2003238350A1 (en) | Components having crystalline coatings of the aluminum oxide/silicon oxide system and method for the production thereof | |
ATE485115T1 (de) | Verfahren und system zum behandeln eines werkstückes wie eines halbleiterwafers | |
MY122888A (en) | Carbon doped oxide deposition | |
GB2370417A (en) | A method and apparatus for forming an under bump metallization structure |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |