DE60038175D1 - Plasmaätzkammer - Google Patents
PlasmaätzkammerInfo
- Publication number
- DE60038175D1 DE60038175D1 DE60038175T DE60038175T DE60038175D1 DE 60038175 D1 DE60038175 D1 DE 60038175D1 DE 60038175 T DE60038175 T DE 60038175T DE 60038175 T DE60038175 T DE 60038175T DE 60038175 D1 DE60038175 D1 DE 60038175D1
- Authority
- DE
- Germany
- Prior art keywords
- plasma etching
- etching
- plasma
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32642—Focus rings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10S156/915—Differential etching apparatus including focus ring surrounding a wafer for plasma apparatus
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/345,639 US6344105B1 (en) | 1999-06-30 | 1999-06-30 | Techniques for improving etch rate uniformity |
US345639 | 1999-06-30 | ||
PCT/US2000/018234 WO2001001445A1 (en) | 1999-06-30 | 2000-06-29 | Techniques for improving etch rate uniformity |
Publications (2)
Publication Number | Publication Date |
---|---|
DE60038175D1 true DE60038175D1 (de) | 2008-04-10 |
DE60038175T2 DE60038175T2 (de) | 2009-03-12 |
Family
ID=23355856
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60038175T Expired - Lifetime DE60038175T2 (de) | 1999-06-30 | 2000-06-29 | Plasmaätzkammer |
DE60044958T Expired - Lifetime DE60044958D1 (de) | 1999-06-30 | 2000-06-29 | Plasmaätzkammer |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60044958T Expired - Lifetime DE60044958D1 (de) | 1999-06-30 | 2000-06-29 | Plasmaätzkammer |
Country Status (9)
Country | Link |
---|---|
US (1) | US6344105B1 (de) |
EP (2) | EP1898444B1 (de) |
JP (2) | JP4792185B2 (de) |
KR (1) | KR100743872B1 (de) |
CN (2) | CN100392791C (de) |
AU (1) | AU5908600A (de) |
DE (2) | DE60038175T2 (de) |
TW (1) | TW463235B (de) |
WO (1) | WO2001001445A1 (de) |
Families Citing this family (108)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5662770A (en) * | 1993-04-16 | 1997-09-02 | Micron Technology, Inc. | Method and apparatus for improving etch uniformity in remote source plasma reactors with powered wafer chucks |
US6334960B1 (en) * | 1999-03-11 | 2002-01-01 | Board Of Regents, The University Of Texas System | Step and flash imprint lithography |
KR100315088B1 (ko) * | 1999-09-29 | 2001-11-24 | 윤종용 | 포커스 링을 갖는 반도체 웨이퍼 제조 장치 |
US6489249B1 (en) * | 2000-06-20 | 2002-12-03 | Infineon Technologies Ag | Elimination/reduction of black silicon in DT etch |
TW506234B (en) * | 2000-09-18 | 2002-10-11 | Tokyo Electron Ltd | Tunable focus ring for plasma processing |
US6475336B1 (en) * | 2000-10-06 | 2002-11-05 | Lam Research Corporation | Electrostatically clamped edge ring for plasma processing |
US6554954B2 (en) * | 2001-04-03 | 2003-04-29 | Applied Materials Inc. | Conductive collar surrounding semiconductor workpiece in plasma chamber |
TWI234417B (en) * | 2001-07-10 | 2005-06-11 | Tokyo Electron Ltd | Plasma procesor and plasma processing method |
DE10143718A1 (de) * | 2001-08-31 | 2003-03-27 | Infineon Technologies Ag | Lagerungsvorrichtung für einen Wafer in einer Plasmaätzanlage |
US7041201B2 (en) * | 2001-11-14 | 2006-05-09 | Applied Materials, Inc. | Sidewall magnet improving uniformity of inductively coupled plasma and shields used therewith |
AU2002366921A1 (en) * | 2001-12-13 | 2003-07-09 | Tokyo Electron Limited | Ring mechanism, and plasma processing device using the ring mechanism |
US20030159778A1 (en) * | 2002-02-27 | 2003-08-28 | Kunihiko Koroyasu | Plasma processing apparatus, protecting layer therefor and installation of protecting layer |
US20040000375A1 (en) * | 2002-06-27 | 2004-01-01 | Taiwan Semiconductor Manufacturing Co., Ltd. | Plasma etch chamber equipped with multi-layer insert ring |
US20040040663A1 (en) * | 2002-08-29 | 2004-03-04 | Ryujiro Udo | Plasma processing apparatus |
US20040112862A1 (en) * | 2002-12-12 | 2004-06-17 | Molecular Imprints, Inc. | Planarization composition and method of patterning a substrate using the same |
DE10260645B3 (de) * | 2002-12-23 | 2004-09-16 | Infineon Technologies Ag | Kompensationsrahmen zur Aufnahme eines Substrats |
US20040168613A1 (en) * | 2003-02-27 | 2004-09-02 | Molecular Imprints, Inc. | Composition and method to form a release layer |
US7540935B2 (en) * | 2003-03-14 | 2009-06-02 | Lam Research Corporation | Plasma oxidation and removal of oxidized material |
KR101141488B1 (ko) * | 2003-03-21 | 2012-05-03 | 도쿄엘렉트론가부시키가이샤 | 처리중의 기판이면(裏面) 증착 감소방법 및 장치 |
US7049052B2 (en) * | 2003-05-09 | 2006-05-23 | Lam Research Corporation | Method providing an improved bi-layer photoresist pattern |
US20040226516A1 (en) * | 2003-05-13 | 2004-11-18 | Daniel Timothy J. | Wafer pedestal cover |
CN100463112C (zh) * | 2003-05-30 | 2009-02-18 | 周星工程股份有限公司 | 一种用于半导体装置的设备 |
US7157036B2 (en) * | 2003-06-17 | 2007-01-02 | Molecular Imprints, Inc | Method to reduce adhesion between a conformable region and a pattern of a mold |
US20060108710A1 (en) * | 2004-11-24 | 2006-05-25 | Molecular Imprints, Inc. | Method to reduce adhesion between a conformable region and a mold |
US20050160934A1 (en) * | 2004-01-23 | 2005-07-28 | Molecular Imprints, Inc. | Materials and methods for imprint lithography |
US7307118B2 (en) * | 2004-11-24 | 2007-12-11 | Molecular Imprints, Inc. | Composition to reduce adhesion between a conformable region and a mold |
US7658816B2 (en) | 2003-09-05 | 2010-02-09 | Tokyo Electron Limited | Focus ring and plasma processing apparatus |
US7024105B2 (en) * | 2003-10-10 | 2006-04-04 | Applied Materials Inc. | Substrate heater assembly |
US7122482B2 (en) | 2003-10-27 | 2006-10-17 | Molecular Imprints, Inc. | Methods for fabricating patterned features utilizing imprint lithography |
US7244336B2 (en) * | 2003-12-17 | 2007-07-17 | Lam Research Corporation | Temperature controlled hot edge ring assembly for reducing plasma reactor etch rate drift |
US7338578B2 (en) * | 2004-01-20 | 2008-03-04 | Taiwan Semiconductor Manufacturing Co., Ltd. | Step edge insert ring for etch chamber |
US8076386B2 (en) * | 2004-02-23 | 2011-12-13 | Molecular Imprints, Inc. | Materials for imprint lithography |
US20050189068A1 (en) * | 2004-02-27 | 2005-09-01 | Kawasaki Microelectronics, Inc. | Plasma processing apparatus and method of plasma processing |
JP3981091B2 (ja) * | 2004-03-01 | 2007-09-26 | 株式会社東芝 | 成膜用リングおよび半導体装置の製造装置 |
US20050193951A1 (en) * | 2004-03-08 | 2005-09-08 | Muneo Furuse | Plasma processing apparatus |
JP2005303099A (ja) | 2004-04-14 | 2005-10-27 | Hitachi High-Technologies Corp | プラズマ処理装置およびプラズマ処理方法 |
US7282550B2 (en) * | 2004-08-16 | 2007-10-16 | Molecular Imprints, Inc. | Composition to provide a layer with uniform etch characteristics |
US7939131B2 (en) | 2004-08-16 | 2011-05-10 | Molecular Imprints, Inc. | Method to provide a layer with uniform etch characteristics |
US20060062922A1 (en) * | 2004-09-23 | 2006-03-23 | Molecular Imprints, Inc. | Polymerization technique to attenuate oxygen inhibition of solidification of liquids and composition therefor |
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-
1999
- 1999-06-30 US US09/345,639 patent/US6344105B1/en not_active Expired - Lifetime
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2000
- 2000-06-28 TW TW089112761A patent/TW463235B/zh not_active IP Right Cessation
- 2000-06-29 EP EP07023156A patent/EP1898444B1/de not_active Expired - Lifetime
- 2000-06-29 EP EP00945097A patent/EP1198821B1/de not_active Expired - Lifetime
- 2000-06-29 CN CNB008097933A patent/CN100392791C/zh not_active Expired - Lifetime
- 2000-06-29 DE DE60038175T patent/DE60038175T2/de not_active Expired - Lifetime
- 2000-06-29 DE DE60044958T patent/DE60044958D1/de not_active Expired - Lifetime
- 2000-06-29 AU AU59086/00A patent/AU5908600A/en not_active Abandoned
- 2000-06-29 CN CN2008100852345A patent/CN101241846B/zh not_active Expired - Lifetime
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- 2000-06-29 JP JP2001506576A patent/JP4792185B2/ja not_active Expired - Lifetime
- 2000-06-29 WO PCT/US2000/018234 patent/WO2001001445A1/en active IP Right Grant
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WO2001001445A1 (en) | 2001-01-04 |
KR100743872B1 (ko) | 2007-07-30 |
JP2003503841A (ja) | 2003-01-28 |
KR20020041340A (ko) | 2002-06-01 |
JP4792185B2 (ja) | 2011-10-12 |
US6344105B1 (en) | 2002-02-05 |
AU5908600A (en) | 2001-01-31 |
CN101241846A (zh) | 2008-08-13 |
CN100392791C (zh) | 2008-06-04 |
EP1898444A1 (de) | 2008-03-12 |
EP1898444B1 (de) | 2010-09-08 |
DE60038175T2 (de) | 2009-03-12 |
TW463235B (en) | 2001-11-11 |
CN101241846B (zh) | 2010-08-11 |
DE60044958D1 (de) | 2010-10-21 |
JP2011014943A (ja) | 2011-01-20 |
EP1198821A1 (de) | 2002-04-24 |
CN1373899A (zh) | 2002-10-09 |
EP1198821B1 (de) | 2008-02-27 |
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