DE60039220D1 - Vorrichtung mit Zr-Ge-Ti-O oder Hf-Ge-Ti-O als dielektrisches Material und Verfahren zur Herstellung - Google Patents

Vorrichtung mit Zr-Ge-Ti-O oder Hf-Ge-Ti-O als dielektrisches Material und Verfahren zur Herstellung

Info

Publication number
DE60039220D1
DE60039220D1 DE60039220T DE60039220T DE60039220D1 DE 60039220 D1 DE60039220 D1 DE 60039220D1 DE 60039220 T DE60039220 T DE 60039220T DE 60039220 T DE60039220 T DE 60039220T DE 60039220 D1 DE60039220 D1 DE 60039220D1
Authority
DE
Germany
Prior art keywords
production
dielectric material
dielectric
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60039220T
Other languages
English (en)
Inventor
Lynn Frances Schneemeyer
Dover Robert Bruce Van
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Agere Systems LLC
Original Assignee
Agere Systems Optoelectronics Guardian Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agere Systems Optoelectronics Guardian Corp filed Critical Agere Systems Optoelectronics Guardian Corp
Application granted granted Critical
Publication of DE60039220D1 publication Critical patent/DE60039220D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28158—Making the insulator
    • H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
    • H01L21/28194—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation by deposition, e.g. evaporation, ALD, CVD, sputtering, laser deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02197—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides the material having a perovskite structure, e.g. BaTiO3
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02266—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by physical ablation of a target, e.g. sputtering, reactive sputtering, physical vapour deposition or pulsed laser deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
    • H01L21/31691—Inorganic layers composed of oxides or glassy oxides or oxide based glass with perovskite structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/51—Insulating materials associated therewith
    • H01L29/511—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/51—Insulating materials associated therewith
    • H01L29/517—Insulating materials associated therewith the insulating material comprising a metallic compound, e.g. metal oxide, metal silicate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
DE60039220T 1999-12-08 2000-11-27 Vorrichtung mit Zr-Ge-Ti-O oder Hf-Ge-Ti-O als dielektrisches Material und Verfahren zur Herstellung Expired - Lifetime DE60039220D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/456,807 US6437392B1 (en) 1999-12-08 1999-12-08 Article comprising a dielectric material of ZR-Ge-Ti-O or Hf-Ge-Ti-O and method of making the same

Publications (1)

Publication Number Publication Date
DE60039220D1 true DE60039220D1 (de) 2008-07-31

Family

ID=23814230

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60039220T Expired - Lifetime DE60039220D1 (de) 1999-12-08 2000-11-27 Vorrichtung mit Zr-Ge-Ti-O oder Hf-Ge-Ti-O als dielektrisches Material und Verfahren zur Herstellung

Country Status (5)

Country Link
US (1) US6437392B1 (de)
EP (1) EP1107304B1 (de)
JP (2) JP5208335B2 (de)
KR (1) KR100753777B1 (de)
DE (1) DE60039220D1 (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2361244B (en) * 2000-04-14 2004-02-11 Trikon Holdings Ltd A method of depositing dielectric
JP4034627B2 (ja) * 2001-09-28 2008-01-16 テキサス インスツルメンツ インコーポレイテツド 集積回路及びその製造方法
US6559014B1 (en) * 2001-10-15 2003-05-06 Advanced Micro Devices, Inc. Preparation of composite high-K / standard-K dielectrics for semiconductor devices
JP4123806B2 (ja) * 2002-03-29 2008-07-23 高橋 研 磁気記録媒体、その製造方法および磁気記録装置
JP3776889B2 (ja) * 2003-02-07 2006-05-17 株式会社東芝 半導体装置およびその製造方法
US20050082624A1 (en) * 2003-10-20 2005-04-21 Evgeni Gousev Germanate gate dielectrics for semiconductor devices
JP4216707B2 (ja) * 2003-12-25 2009-01-28 株式会社東芝 半導体装置の製造方法
DE102005018029A1 (de) * 2005-04-14 2006-10-26 Infineon Technologies Ag Verfahren zum Herstellen eines elektrischen Bauelements
US7820506B2 (en) 2008-10-15 2010-10-26 Micron Technology, Inc. Capacitors, dielectric structures, and methods of forming dielectric structures
US8124513B2 (en) * 2009-03-18 2012-02-28 Taiwan Semiconductor Manufacturing Co., Ltd. Germanium field effect transistors and fabrication thereof
US11929421B2 (en) 2020-04-27 2024-03-12 James Dalton Bell Isotope-modified hafnium and semiconductor dielectrics

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5112700A (en) * 1990-07-20 1992-05-12 Eastman Kodak Company Phosphor composition and x-ray intensifying screen capable of emitting principally in the spectral region of native silver halide sensitivity
JP3363301B2 (ja) * 1995-03-08 2003-01-08 シャープ株式会社 強誘電体薄膜被覆基板及びその製造方法及び強誘電体薄膜被覆基板によって構成された不揮発性メモリ
US5912797A (en) * 1997-09-24 1999-06-15 Lucent Technologies Inc. Dielectric materials of amorphous compositions and devices employing same

Also Published As

Publication number Publication date
KR20010062199A (ko) 2001-07-07
EP1107304A3 (de) 2003-02-12
JP2001217240A (ja) 2001-08-10
US6437392B1 (en) 2002-08-20
JP2012041633A (ja) 2012-03-01
JP5208335B2 (ja) 2013-06-12
EP1107304B1 (de) 2008-06-18
EP1107304A2 (de) 2001-06-13
KR100753777B1 (ko) 2007-08-31

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