DE60039996D1 - Chemisch-mechanische poliersysteme und verfahren zu ihrer verwendung - Google Patents
Chemisch-mechanische poliersysteme und verfahren zu ihrer verwendungInfo
- Publication number
- DE60039996D1 DE60039996D1 DE60039996T DE60039996T DE60039996D1 DE 60039996 D1 DE60039996 D1 DE 60039996D1 DE 60039996 T DE60039996 T DE 60039996T DE 60039996 T DE60039996 T DE 60039996T DE 60039996 D1 DE60039996 D1 DE 60039996D1
- Authority
- DE
- Germany
- Prior art keywords
- chemical
- polymer systems
- mechanical polymer
- metals
- mechanical
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F3/00—Brightening metals by chemical means
- C23F3/04—Heavy metals
- C23F3/06—Heavy metals with acidic solutions
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US14887899P | 1999-08-13 | 1999-08-13 | |
PCT/US2000/020368 WO2001012739A1 (en) | 1999-08-13 | 2000-07-26 | Chemical mechanical polishing systems and methods for their use |
Publications (1)
Publication Number | Publication Date |
---|---|
DE60039996D1 true DE60039996D1 (de) | 2008-10-02 |
Family
ID=22527822
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60039996T Expired - Lifetime DE60039996D1 (de) | 1999-08-13 | 2000-07-26 | Chemisch-mechanische poliersysteme und verfahren zu ihrer verwendung |
Country Status (13)
Country | Link |
---|---|
US (2) | US6840971B2 (de) |
EP (1) | EP1218464B1 (de) |
JP (2) | JP2003507894A (de) |
KR (1) | KR20020026954A (de) |
CN (1) | CN1209430C (de) |
AT (1) | ATE405618T1 (de) |
AU (1) | AU6379500A (de) |
CA (1) | CA2378771A1 (de) |
DE (1) | DE60039996D1 (de) |
HK (1) | HK1046424A1 (de) |
IL (1) | IL147235A0 (de) |
TW (1) | TW483805B (de) |
WO (1) | WO2001012739A1 (de) |
Families Citing this family (78)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4053165B2 (ja) * | 1998-12-01 | 2008-02-27 | 株式会社フジミインコーポレーテッド | 研磨用組成物およびそれを用いた研磨方法 |
KR100738842B1 (ko) * | 2000-05-30 | 2007-07-12 | 가부시키가이샤 후지미인코퍼레이티드 | 연마 조성물 및 그를 이용한 연마 방법 |
US6435944B1 (en) | 1999-10-27 | 2002-08-20 | Applied Materials, Inc. | CMP slurry for planarizing metals |
US6451697B1 (en) | 2000-04-06 | 2002-09-17 | Applied Materials, Inc. | Method for abrasive-free metal CMP in passivation domain |
US6872329B2 (en) | 2000-07-28 | 2005-03-29 | Applied Materials, Inc. | Chemical mechanical polishing composition and process |
US6524167B1 (en) | 2000-10-27 | 2003-02-25 | Applied Materials, Inc. | Method and composition for the selective removal of residual materials and barrier materials during substrate planarization |
JP3768402B2 (ja) * | 2000-11-24 | 2006-04-19 | Necエレクトロニクス株式会社 | 化学的機械的研磨用スラリー |
US6740589B2 (en) | 2000-11-30 | 2004-05-25 | Showa Denko Kabushiki Kaisha | Composition for polishing semiconductor wafer, semiconductor circuit wafer, and method for producing the same |
US20030003747A1 (en) * | 2001-06-29 | 2003-01-02 | Jae Hong Kim | Chemical mechanical polishing slurry for ruthenium titanium nitride and polishing process using the same |
JP2003041385A (ja) * | 2001-07-27 | 2003-02-13 | Ajinomoto Co Inc | 金属表面保護膜形成剤及びその使用 |
US6953389B2 (en) * | 2001-08-09 | 2005-10-11 | Cheil Industries, Inc. | Metal CMP slurry compositions that favor mechanical removal of oxides with reduced susceptibility to micro-scratching |
TW591089B (en) * | 2001-08-09 | 2004-06-11 | Cheil Ind Inc | Slurry composition for use in chemical mechanical polishing of metal wiring |
US6730592B2 (en) | 2001-12-21 | 2004-05-04 | Micron Technology, Inc. | Methods for planarization of metal-containing surfaces using halogens and halide salts |
US7049237B2 (en) * | 2001-12-21 | 2006-05-23 | Micron Technology, Inc. | Methods for planarization of Group VIII metal-containing surfaces using oxidizing gases |
US7121926B2 (en) * | 2001-12-21 | 2006-10-17 | Micron Technology, Inc. | Methods for planarization of group VIII metal-containing surfaces using a fixed abrasive article |
US20030119316A1 (en) * | 2001-12-21 | 2003-06-26 | Micron Technology, Inc. | Methods for planarization of group VIII metal-containing surfaces using oxidizing agents |
US6884723B2 (en) * | 2001-12-21 | 2005-04-26 | Micron Technology, Inc. | Methods for planarization of group VIII metal-containing surfaces using complexing agents |
KR100451986B1 (ko) * | 2001-12-31 | 2004-10-08 | 주식회사 하이닉스반도체 | 반도체 소자의 저장전극 콘택 플러그 형성방법 |
US7004819B2 (en) * | 2002-01-18 | 2006-02-28 | Cabot Microelectronics Corporation | CMP systems and methods utilizing amine-containing polymers |
US20050282387A1 (en) * | 2002-06-07 | 2005-12-22 | Takashi Sato | Metal polish composition, polishing method using the composition and method for producing wafer using the polishing method |
JP2004071674A (ja) * | 2002-08-02 | 2004-03-04 | Nec Electronics Corp | 半導体装置の製造方法 |
JP2004071673A (ja) * | 2002-08-02 | 2004-03-04 | Nec Electronics Corp | 銅系金属研磨スラリー |
KR100891612B1 (ko) * | 2002-12-20 | 2009-04-08 | 주식회사 동진쎄미켐 | 구리 배선 공정에 대한 연마 효율 및 선택비가 우수한화학-기계적 연마 슬러리 조성물 |
US20040175942A1 (en) * | 2003-01-03 | 2004-09-09 | Chang Song Y. | Composition and method used for chemical mechanical planarization of metals |
US7160807B2 (en) * | 2003-06-30 | 2007-01-09 | Cabot Microelectronics Corporation | CMP of noble metals |
US7241725B2 (en) * | 2003-09-25 | 2007-07-10 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Barrier polishing fluid |
JP2005116987A (ja) * | 2003-10-10 | 2005-04-28 | Fujimi Inc | 研磨用組成物 |
EP1670047B1 (de) * | 2003-09-30 | 2010-04-07 | Fujimi Incorporated | Polierzusammensetzung und polierverfahren |
US7022255B2 (en) | 2003-10-10 | 2006-04-04 | Dupont Air Products Nanomaterials Llc | Chemical-mechanical planarization composition with nitrogen containing polymer and method for use |
US20050090106A1 (en) * | 2003-10-22 | 2005-04-28 | Jinru Bian | Method of second step polishing in copper CMP with a polishing fluid containing no oxidizing agent |
US7255810B2 (en) * | 2004-01-09 | 2007-08-14 | Cabot Microelectronics Corporation | Polishing system comprising a highly branched polymer |
US7087564B2 (en) * | 2004-03-05 | 2006-08-08 | Air Liquide America, L.P. | Acidic chemistry for post-CMP cleaning |
JP2005268664A (ja) * | 2004-03-19 | 2005-09-29 | Fujimi Inc | 研磨用組成物 |
JP2005268666A (ja) * | 2004-03-19 | 2005-09-29 | Fujimi Inc | 研磨用組成物 |
JP4316406B2 (ja) * | 2004-03-22 | 2009-08-19 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
JP4644434B2 (ja) * | 2004-03-24 | 2011-03-02 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
JP2006086462A (ja) * | 2004-09-17 | 2006-03-30 | Fujimi Inc | 研磨用組成物およびそれを用いた配線構造体の製造法 |
JP2006135072A (ja) * | 2004-11-05 | 2006-05-25 | Fujimi Inc | 研磨方法 |
JP2006179845A (ja) | 2004-11-26 | 2006-07-06 | Fuji Photo Film Co Ltd | 金属用研磨液及び研磨方法 |
US20060278614A1 (en) * | 2005-06-08 | 2006-12-14 | Cabot Microelectronics Corporation | Polishing composition and method for defect improvement by reduced particle stiction on copper surface |
US7998335B2 (en) * | 2005-06-13 | 2011-08-16 | Cabot Microelectronics Corporation | Controlled electrochemical polishing method |
TWI397577B (zh) * | 2005-09-02 | 2013-06-01 | Fujimi Inc | 研磨用組成物 |
JP5026710B2 (ja) * | 2005-09-02 | 2012-09-19 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
JP2007095713A (ja) * | 2005-09-26 | 2007-04-12 | Fujifilm Corp | バリア層用研磨液 |
US7265055B2 (en) * | 2005-10-26 | 2007-09-04 | Cabot Microelectronics Corporation | CMP of copper/ruthenium substrates |
JP2007266075A (ja) * | 2006-03-27 | 2007-10-11 | Fujifilm Corp | 金属用研磨液 |
US7585340B2 (en) * | 2006-04-27 | 2009-09-08 | Cabot Microelectronics Corporation | Polishing composition containing polyether amine |
SG136886A1 (en) * | 2006-04-28 | 2007-11-29 | Asahi Glass Co Ltd | Method for producing glass substrate for magnetic disk, and magnetic disk |
KR101032504B1 (ko) * | 2006-06-30 | 2011-05-04 | 주식회사 엘지화학 | Cmp 슬러리 |
SG139699A1 (en) * | 2006-08-02 | 2008-02-29 | Fujimi Inc | Polishing composition and polishing process |
JP2008277723A (ja) | 2007-03-30 | 2008-11-13 | Fujifilm Corp | 金属用研磨液及び研磨方法 |
US7976723B2 (en) * | 2007-05-17 | 2011-07-12 | International Business Machines Corporation | Method for kinetically controlled etching of copper |
US20090032006A1 (en) * | 2007-07-31 | 2009-02-05 | Chul Woo Nam | Wire saw process |
JP2009164186A (ja) * | 2007-12-28 | 2009-07-23 | Fujimi Inc | 研磨用組成物 |
JP2009164188A (ja) * | 2007-12-28 | 2009-07-23 | Fujimi Inc | 研磨用組成物 |
US9202709B2 (en) | 2008-03-19 | 2015-12-01 | Fujifilm Corporation | Polishing liquid for metal and polishing method using the same |
KR101084676B1 (ko) * | 2008-12-03 | 2011-11-22 | 주식회사 엘지화학 | 1차 화학적 기계적 연마용 슬러리 조성물 및 화학적 기계적 연마 방법 |
US8506831B2 (en) * | 2008-12-23 | 2013-08-13 | Air Products And Chemicals, Inc. | Combination, method, and composition for chemical mechanical planarization of a tungsten-containing substrate |
CN102101982A (zh) * | 2009-12-18 | 2011-06-22 | 安集微电子(上海)有限公司 | 一种化学机械抛光液 |
JP5587620B2 (ja) * | 2010-01-25 | 2014-09-10 | 株式会社フジミインコーポレーテッド | 研磨用組成物及びそれを用いた研磨方法 |
EP2616401A4 (de) * | 2010-09-16 | 2017-06-28 | Specmat Inc. | Verfahren, prozess und fabrikationstechnologie für hocheffiziente und kostengünstige kristalline siliciumsolarzellen |
CN102304327A (zh) * | 2011-07-05 | 2012-01-04 | 复旦大学 | 一种基于金属Co的抛光工艺的抛光液 |
TWI572711B (zh) * | 2012-10-16 | 2017-03-01 | 盟智科技股份有限公司 | 半導體製程用的清洗組成物及清洗方法 |
CN103831706B (zh) * | 2012-11-27 | 2018-02-09 | 安集微电子(上海)有限公司 | 一种化学机械抛光工艺 |
CN103894918A (zh) * | 2012-12-28 | 2014-07-02 | 安集微电子(上海)有限公司 | 一种化学机械抛光方法 |
CN103898512B (zh) * | 2012-12-28 | 2018-10-26 | 安集微电子(上海)有限公司 | 一种用于铜互连的化学机械抛光液及工艺 |
US20140273458A1 (en) * | 2013-03-12 | 2014-09-18 | Air Products And Chemicals, Inc. | Chemical Mechanical Planarization for Tungsten-Containing Substrates |
CN104131298A (zh) * | 2014-07-01 | 2014-11-05 | 蚌埠天光传感器有限公司 | 一种用于不锈钢材料的抛光液及其制备方法 |
CN106661382B (zh) * | 2014-07-15 | 2020-03-24 | 巴斯夫欧洲公司 | 化学机械抛光(cmp)组合物 |
US10899945B2 (en) | 2015-08-12 | 2021-01-26 | Basf Se | Use of a chemical mechanical polishing (CMP) composition for polishing of cobalt comprising substrates |
US9528030B1 (en) * | 2015-10-21 | 2016-12-27 | Cabot Microelectronics Corporation | Cobalt inhibitor combination for improved dishing |
WO2017147891A1 (en) * | 2016-03-04 | 2017-09-08 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Method of chemical mechanical polishing a semiconductor substrate |
US10600655B2 (en) | 2017-08-10 | 2020-03-24 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing method for tungsten |
JP7330966B2 (ja) | 2017-11-22 | 2023-08-22 | ビーエーエスエフ ソシエタス・ヨーロピア | 化学機械研磨組成物 |
WO2020100985A1 (ja) * | 2018-11-15 | 2020-05-22 | 花王株式会社 | 研磨液組成物 |
US10676647B1 (en) | 2018-12-31 | 2020-06-09 | Cabot Microelectronics Corporation | Composition for tungsten CMP |
TWI761921B (zh) * | 2019-10-30 | 2022-04-21 | 南韓商Skc索密思股份有限公司 | 研磨墊、製造該研磨墊之方法及使用該研磨墊以製造半導體裝置之方法 |
CN112920716A (zh) * | 2021-01-26 | 2021-06-08 | 中国科学院上海微系统与信息技术研究所 | 一种用于氮化钛化学机械抛光的组合物及其使用方法 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4930330A (de) * | 1973-03-23 | 1974-03-18 | ||
US5532191A (en) * | 1993-03-26 | 1996-07-02 | Kawasaki Steel Corporation | Method of chemical mechanical polishing planarization of an insulating film using an etching stop |
US5575885A (en) * | 1993-12-14 | 1996-11-19 | Kabushiki Kaisha Toshiba | Copper-based metal polishing solution and method for manufacturing semiconductor device |
US6309560B1 (en) * | 1996-12-09 | 2001-10-30 | Cabot Microelectronics Corporation | Chemical mechanical polishing slurry useful for copper substrates |
US6194317B1 (en) * | 1998-04-30 | 2001-02-27 | 3M Innovative Properties Company | Method of planarizing the upper surface of a semiconductor wafer |
US6083419A (en) * | 1997-07-28 | 2000-07-04 | Cabot Corporation | Polishing composition including an inhibitor of tungsten etching |
JP3371775B2 (ja) * | 1997-10-31 | 2003-01-27 | 株式会社日立製作所 | 研磨方法 |
US6432828B2 (en) * | 1998-03-18 | 2002-08-13 | Cabot Microelectronics Corporation | Chemical mechanical polishing slurry useful for copper substrates |
KR20010042616A (ko) * | 1998-04-10 | 2001-05-25 | 페로 코포레이션 | 금속 표면의 화학적-기계적 연마용 슬러리 |
TW455626B (en) * | 1998-07-23 | 2001-09-21 | Eternal Chemical Co Ltd | Chemical mechanical abrasive composition for use in semiconductor processing |
CN1126152C (zh) * | 1998-08-31 | 2003-10-29 | 长兴化学工业股份有限公司 | 半导体制程用的化学机械研磨组合物 |
JP4053165B2 (ja) * | 1998-12-01 | 2008-02-27 | 株式会社フジミインコーポレーテッド | 研磨用組成物およびそれを用いた研磨方法 |
US6136714A (en) * | 1998-12-17 | 2000-10-24 | Siemens Aktiengesellschaft | Methods for enhancing the metal removal rate during the chemical-mechanical polishing process of a semiconductor |
-
2000
- 2000-07-26 AT AT00950734T patent/ATE405618T1/de active
- 2000-07-26 DE DE60039996T patent/DE60039996D1/de not_active Expired - Lifetime
- 2000-07-26 JP JP2001517627A patent/JP2003507894A/ja active Pending
- 2000-07-26 CA CA002378771A patent/CA2378771A1/en not_active Abandoned
- 2000-07-26 KR KR1020027001012A patent/KR20020026954A/ko not_active Application Discontinuation
- 2000-07-26 EP EP00950734A patent/EP1218464B1/de not_active Expired - Lifetime
- 2000-07-26 WO PCT/US2000/020368 patent/WO2001012739A1/en active Application Filing
- 2000-07-26 IL IL14723500A patent/IL147235A0/xx unknown
- 2000-07-26 AU AU63795/00A patent/AU6379500A/en not_active Abandoned
- 2000-07-26 CN CNB008116385A patent/CN1209430C/zh not_active Expired - Lifetime
- 2000-08-11 TW TW089116243A patent/TW483805B/zh not_active IP Right Cessation
-
2002
- 2002-11-04 HK HK02108004.5A patent/HK1046424A1/zh unknown
- 2002-12-19 US US10/324,634 patent/US6840971B2/en not_active Expired - Lifetime
-
2005
- 2005-01-10 US US11/033,068 patent/US7354530B2/en not_active Expired - Lifetime
-
2006
- 2006-05-10 JP JP2006131649A patent/JP5073961B2/ja not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
CN1370208A (zh) | 2002-09-18 |
US7354530B2 (en) | 2008-04-08 |
CA2378771A1 (en) | 2001-02-22 |
EP1218464A1 (de) | 2002-07-03 |
JP2006287244A (ja) | 2006-10-19 |
AU6379500A (en) | 2001-03-13 |
KR20020026954A (ko) | 2002-04-12 |
WO2001012739A1 (en) | 2001-02-22 |
JP5073961B2 (ja) | 2012-11-14 |
EP1218464B1 (de) | 2008-08-20 |
US6840971B2 (en) | 2005-01-11 |
US20030166337A1 (en) | 2003-09-04 |
HK1046424A1 (zh) | 2003-01-10 |
JP2003507894A (ja) | 2003-02-25 |
US20050148187A1 (en) | 2005-07-07 |
IL147235A0 (en) | 2002-08-14 |
ATE405618T1 (de) | 2008-09-15 |
CN1209430C (zh) | 2005-07-06 |
TW483805B (en) | 2002-04-21 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE60039996D1 (de) | Chemisch-mechanische poliersysteme und verfahren zu ihrer verwendung | |
TW375660B (en) | Fluoride additive containing chemical mechanical polishing slurry composition and method for use of same | |
ATE307804T1 (de) | Effiziente durch liganden vermittelte ullmann kupplung von anilinen und azolen | |
TWI256966B (en) | Chemical mechanical polishing slurry useful for copper substrates | |
PL365182A1 (en) | Water-soluble or water-swellable, associatively thickening copolymers containing sulfo groups, method for producing the same and use thereof | |
MY126250A (en) | Rare earth salt/oxidizer-based cmp method | |
WO2001078116A3 (en) | System for the preferential removal of silicon oxide | |
DE69910170D1 (de) | Aluminiumoxidpulver, verfahren zu dessen herstellung und polierzusammensetzung | |
ATE271037T1 (de) | Substituierte karbazole, verfahren zu ihrer herstellung und ihre verwendung als spla2- inhibitoren | |
AR024138A1 (es) | Inhibidores de la proliferacion celular | |
DE69818278D1 (de) | Steroid sulfataseinhibitoren, verfahren zu ihrer herstellung und verwendung | |
AU2003242942A1 (en) | Polishing composition containing conducting polymer | |
DE59913771D1 (de) | Beschichtungsmittel und Klebstoffe, ihre Verwendung und Verfahren zu ihrer Herstellung | |
AU5619599A (en) | Media for water treatment | |
PL368195A1 (en) | Tricyclic imidazopyridines | |
MXPA03001536A (es) | (aminoalcoxibenzoil) benzofuranos o benzotiofenos, metodo para preparar los mismo y composiciones que los contienen. | |
DE60315247D1 (de) | Dünne ferroelektrische Schicht und Verfahren zu ihrer Herstellung | |
WO2003038862A3 (en) | Pads for cmp and polishing substrates | |
WO2003042273A8 (en) | Compounds containing quaternary carbons, medical devices, and methods | |
AU2002255756A1 (en) | System for screening fatty acid transport inhibitors, methods of use and modulators identified thereby | |
DE50103776D1 (de) | Pulverklarlackdispersionen (pulverslurry-klarlacke), verfahren zu ihrer herstellung und ihre verwendung | |
GB9923710D0 (en) | Chemical compounds | |
ATE373700T1 (de) | Organopolysiloxane-enthaltende zusammensetzung, verfahren zu ihrer herstellung und deren verwendung | |
WO2001004354A3 (en) | Use of ras inhibitors of inhibiting muscle atrophy | |
DE50107044D1 (en) | Alkohol-blockierte polyisocyanate für coil coating |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |