DE60113153D1 - Verfahren zur Messung der Ausrichtung eines Substrats bezüglich einer Referenz-Ausrichtmarke - Google Patents
Verfahren zur Messung der Ausrichtung eines Substrats bezüglich einer Referenz-AusrichtmarkeInfo
- Publication number
- DE60113153D1 DE60113153D1 DE60113153T DE60113153T DE60113153D1 DE 60113153 D1 DE60113153 D1 DE 60113153D1 DE 60113153 T DE60113153 T DE 60113153T DE 60113153 T DE60113153 T DE 60113153T DE 60113153 D1 DE60113153 D1 DE 60113153D1
- Authority
- DE
- Germany
- Prior art keywords
- substrate
- respect
- mark
- alignment
- measuring
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000758 substrate Substances 0.000 title abstract 4
- 230000000737 periodic effect Effects 0.000 abstract 2
- 238000005286 illumination Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
- G03F9/7007—Alignment other than original with workpiece
- G03F9/7015—Reference, i.e. alignment of original or workpiece with respect to a reference not on the original or workpiece
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7049—Technique, e.g. interferometric
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7073—Alignment marks and their environment
- G03F9/7076—Mark details, e.g. phase grating mark, temporary mark
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP00204825 | 2000-12-27 | ||
EP00204825 | 2000-12-27 | ||
PCT/IB2001/002462 WO2002052350A1 (en) | 2000-12-27 | 2001-12-10 | Method of measuring alignment of a substrate with respect to a reference alignment mark |
Publications (2)
Publication Number | Publication Date |
---|---|
DE60113153D1 true DE60113153D1 (de) | 2005-10-06 |
DE60113153T2 DE60113153T2 (de) | 2006-06-29 |
Family
ID=8172582
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60113153T Expired - Lifetime DE60113153T2 (de) | 2000-12-27 | 2001-12-10 | Verfahren zur Messung der Ausrichtung eines Substrats bezüglich einer Referenz-Ausrichtmarke |
Country Status (8)
Country | Link |
---|---|
US (2) | US6937334B2 (de) |
EP (1) | EP1348149B1 (de) |
JP (1) | JP4150256B2 (de) |
KR (1) | KR100830660B1 (de) |
AT (1) | ATE303613T1 (de) |
DE (1) | DE60113153T2 (de) |
TW (1) | TW556296B (de) |
WO (1) | WO2002052350A1 (de) |
Families Citing this family (34)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1483559A2 (de) * | 2002-03-08 | 2004-12-08 | Carl Zeiss SMT AG | Moire-verfahren und messsystem zur messung der verzerrung eines optischen abbildungssystems |
GB2388896A (en) * | 2002-05-21 | 2003-11-26 | Sharp Kk | An apparatus for and method of aligning a structure |
CN1506768B (zh) | 2002-09-20 | 2011-01-26 | Asml荷兰有限公司 | 用于光刻系统的对准系统和方法 |
DE10309084A1 (de) * | 2003-03-03 | 2004-09-16 | Carl Zeiss Smt Ag | Reflektives optisches Element und EUV-Lithographiegerät |
US6864956B1 (en) * | 2003-03-19 | 2005-03-08 | Silterra Malaysia Sdn. Bhd. | Dual phase grating alignment marks |
DE10319005A1 (de) | 2003-04-25 | 2004-11-25 | Carl Zeiss Smt Ag | Reflektives optisches Element, optisches System und EUV-Lithographievorrichtung |
US7349105B2 (en) * | 2004-09-01 | 2008-03-25 | Intel Corporation | Method and apparatus for measuring alignment of layers in photolithographic processes |
US7453577B2 (en) | 2004-12-14 | 2008-11-18 | Asml Netherlands B.V. | Apparatus and method for inspecting a patterned part of a sample |
JP2009509156A (ja) * | 2005-09-21 | 2009-03-05 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 物体の運動を検出するシステム |
DE102005062618B4 (de) * | 2005-12-23 | 2008-05-08 | Carl Zeiss Smt Ag | Optische Abbildungseinrichtung und Abbildungsverfahren mit Bestimmung von Abbildungsfehlern |
US7433018B2 (en) * | 2005-12-27 | 2008-10-07 | Asml Netherlands B.V. | Pattern alignment method and lithographic apparatus |
TWI294640B (en) * | 2006-02-16 | 2008-03-11 | Nanya Technology Corp | Alignment mark and alignment method for the fabrication of trench-capacitor dram devices |
US7656529B1 (en) * | 2006-05-30 | 2010-02-02 | Mehrdad Nikoonahad | Overlay error measurement using fourier optics |
US20080036984A1 (en) * | 2006-08-08 | 2008-02-14 | Asml Netherlands B.V. | Method and apparatus for angular-resolved spectroscopic lithography characterization |
US7953550B1 (en) | 2007-01-04 | 2011-05-31 | Ag Sense, L.L.C. | Center pivot irrigation system position sensing system |
US7837907B2 (en) * | 2007-07-20 | 2010-11-23 | Molecular Imprints, Inc. | Alignment system and method for a substrate in a nano-imprint process |
JP5066401B2 (ja) * | 2007-07-24 | 2012-11-07 | 株式会社森精機製作所 | 定点検出装置及び変位測定装置 |
DE102008004762A1 (de) | 2008-01-16 | 2009-07-30 | Carl Zeiss Smt Ag | Projektionsbelichtungsanlage für die Mikrolithographie mit einer Messeinrichtung |
KR101573463B1 (ko) * | 2009-02-26 | 2015-12-01 | 삼성전자주식회사 | 정렬부를 포함하는 반도체 장비 |
WO2011153016A1 (en) * | 2010-06-04 | 2011-12-08 | Advantech Global, Ltd. | Shadow mask alignment using coded apertures |
US9580792B2 (en) | 2010-06-04 | 2017-02-28 | Advantech Global, Ltd | Shadow mask alignment using variable pitch coded apertures |
US9122172B2 (en) | 2010-06-04 | 2015-09-01 | Advantech Global, Ltd | Reflection shadow mask alignment using coded apertures |
JP6381197B2 (ja) * | 2013-10-31 | 2018-08-29 | キヤノン株式会社 | 計測装置、計測方法、リソグラフィ装置、及び物品製造方法 |
EP2980669B1 (de) * | 2014-08-01 | 2017-09-20 | AGCO Corporation | Bestimmung von feldmerkmalen mithilfe optischer erkennung |
EP3133369B1 (de) * | 2015-08-19 | 2017-12-20 | Mitutoyo Corporation | Verfahren zur messung einer höhenkarte von mehreren sichtfeldern und kombination davon zur ermittlung einer zusammengesetzten höhenkarte mit verminderter empfindlichkeit gegenüber instrumentendrift |
KR102170147B1 (ko) | 2015-12-28 | 2020-10-27 | 에이에스엠엘 네델란즈 비.브이. | 모듈레이션 기술을 이용한 메트롤로지를 위한 대체 타겟 디자인 |
JP6971567B2 (ja) * | 2016-12-16 | 2021-11-24 | キヤノン株式会社 | 位置合わせ装置、位置合わせ方法、リソグラフィ装置、および物品製造方法 |
US20200232786A1 (en) * | 2017-02-23 | 2020-07-23 | Nikon Corporation | Measurement of a change in a geometrical characteristic and/or position of a workpiece |
EP3454129A1 (de) * | 2017-09-07 | 2019-03-13 | ASML Netherlands B.V. | Schlagmuster zur ausrichtung auf kleine metrologieziele |
CN111479947A (zh) * | 2017-12-29 | 2020-07-31 | 微软技术许可有限责任公司 | 使用通过被定位的阴影掩模进行气相沉积的制造工艺 |
EP3629086A1 (de) * | 2018-09-25 | 2020-04-01 | ASML Netherlands B.V. | Verfahren und vorrichtung zum bestimmen eines strahlungsintensitätsprofils |
CN110411344B (zh) * | 2019-08-06 | 2021-07-20 | 北京半导体专用设备研究所(中国电子科技集团公司第四十五研究所) | 一种校准方法、校准装置、校准系统及电子设备 |
WO2021112034A1 (ja) | 2019-12-03 | 2021-06-10 | 株式会社荏原製作所 | 研磨装置および研磨方法 |
WO2023012338A1 (en) * | 2021-08-06 | 2023-02-09 | Asml Netherlands B.V. | Metrology target, patterning device and metrology method |
Family Cites Families (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL7606548A (nl) * | 1976-06-17 | 1977-12-20 | Philips Nv | Werkwijze en inrichting voor het uitrichten van een i.c.-patroon ten opzichte van een halfgelei- dend substraat. |
NL186353C (nl) * | 1979-06-12 | 1990-11-01 | Philips Nv | Inrichting voor het afbeelden van een maskerpatroon op een substraat voorzien van een opto-elektronisch detektiestelsel voor het bepalen van een afwijking tussen het beeldvlak van een projektielenzenstelsel en het substraatvlak. |
DE3318980C2 (de) * | 1982-07-09 | 1986-09-18 | Perkin-Elmer Censor Anstalt, Vaduz | Vorrichtung zum Justieren beim Projektionskopieren von Masken |
NL8401710A (nl) * | 1984-05-29 | 1985-12-16 | Philips Nv | Inrichting voor het afbeelden van een maskerpatroon op een substraat. |
US4861162A (en) * | 1985-05-16 | 1989-08-29 | Canon Kabushiki Kaisha | Alignment of an object |
NL8600639A (nl) * | 1986-03-12 | 1987-10-01 | Asm Lithography Bv | Werkwijze voor het ten opzichte van elkaar uitrichten van een masker en een substraat en inrichting voor het uitvoeren van de werkwijze. |
NL8601547A (nl) * | 1986-06-16 | 1988-01-18 | Philips Nv | Optisch litografische inrichting met verplaatsbaar lenzenstelsel en werkwijze voor het regelen van de afbeeldingseigenschappen van een lenzenstelsel in een dergelijke inrichting. |
JPH0269604A (ja) * | 1988-09-05 | 1990-03-08 | Matsushita Electric Ind Co Ltd | 位置合わせ方法 |
NL8900991A (nl) * | 1989-04-20 | 1990-11-16 | Asm Lithography Bv | Apparaat voor het afbeelden van een maskerpatroon op een substraat. |
NL9000503A (nl) * | 1990-03-05 | 1991-10-01 | Asm Lithography Bv | Apparaat en werkwijze voor het afbeelden van een maskerpatroon op een substraat. |
NL9001611A (nl) * | 1990-07-16 | 1992-02-17 | Asm Lithography Bv | Apparaat voor het afbeelden van een maskerpatroon op een substraat. |
JPH0828321B2 (ja) * | 1990-08-20 | 1996-03-21 | 松下電器産業株式会社 | レジスト塗布評価方法 |
NL9100215A (nl) | 1991-02-07 | 1992-09-01 | Asm Lithography Bv | Inrichting voor het repeterend afbeelden van een maskerpatroon op een substraat. |
NL9100410A (nl) * | 1991-03-07 | 1992-10-01 | Asm Lithography Bv | Afbeeldingsapparaat voorzien van een focusfout- en/of scheefstandsdetectie-inrichting. |
US5243195A (en) * | 1991-04-25 | 1993-09-07 | Nikon Corporation | Projection exposure apparatus having an off-axis alignment system and method of alignment therefor |
US5402224A (en) * | 1992-09-25 | 1995-03-28 | Nikon Corporation | Distortion inspecting method for projection optical system |
US5414514A (en) * | 1993-06-01 | 1995-05-09 | Massachusetts Institute Of Technology | On-axis interferometric alignment of plates using the spatial phase of interference patterns |
US5808742A (en) * | 1995-05-31 | 1998-09-15 | Massachusetts Institute Of Technology | Optical alignment apparatus having multiple parallel alignment marks |
EP0906590B1 (de) | 1997-03-07 | 2003-08-27 | ASML Netherlands B.V. | Lithographisches belichtungsgerät mit einer ausserhalb der belichtungsachse liegenden ausrichtungsvorrichtung |
US6278116B1 (en) * | 1999-08-09 | 2001-08-21 | United Microelectronics Corp. | Method of monitoring deep ultraviolet exposure system |
US6727989B1 (en) * | 2000-06-20 | 2004-04-27 | Infineon Technologies Ag | Enhanced overlay measurement marks for overlay alignment and exposure tool condition control |
US6766211B1 (en) | 2000-10-03 | 2004-07-20 | International Business Machines Corporation | Structure and method for amplifying target overlay errors using the synthesized beat signal between interleaved arrays of differing periodicity |
-
2001
- 2001-08-24 TW TW090120879A patent/TW556296B/zh not_active IP Right Cessation
- 2001-08-28 US US09/940,819 patent/US6937334B2/en not_active Expired - Fee Related
- 2001-12-10 WO PCT/IB2001/002462 patent/WO2002052350A1/en active IP Right Grant
- 2001-12-10 JP JP2002553588A patent/JP4150256B2/ja not_active Expired - Fee Related
- 2001-12-10 KR KR1020027011184A patent/KR100830660B1/ko not_active IP Right Cessation
- 2001-12-10 AT AT01272159T patent/ATE303613T1/de not_active IP Right Cessation
- 2001-12-10 DE DE60113153T patent/DE60113153T2/de not_active Expired - Lifetime
- 2001-12-10 EP EP01272159A patent/EP1348149B1/de not_active Expired - Lifetime
-
2005
- 2005-06-15 US US11/152,083 patent/US7095499B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
WO2002052350A1 (en) | 2002-07-04 |
KR100830660B1 (ko) | 2008-05-20 |
US20020080365A1 (en) | 2002-06-27 |
JP4150256B2 (ja) | 2008-09-17 |
ATE303613T1 (de) | 2005-09-15 |
EP1348149A1 (de) | 2003-10-01 |
JP2004517476A (ja) | 2004-06-10 |
EP1348149B1 (de) | 2005-08-31 |
US20050231698A1 (en) | 2005-10-20 |
US7095499B2 (en) | 2006-08-22 |
TW556296B (en) | 2003-10-01 |
KR20020077924A (ko) | 2002-10-14 |
DE60113153T2 (de) | 2006-06-29 |
US6937334B2 (en) | 2005-08-30 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |