DE60136408D1 - Verfahren zur chemisch-mechanischen Polierung von Metalleitungen mit niedrigem Mulden-Effekt in der Herstellung von halbleitenden Wafern - Google Patents

Verfahren zur chemisch-mechanischen Polierung von Metalleitungen mit niedrigem Mulden-Effekt in der Herstellung von halbleitenden Wafern

Info

Publication number
DE60136408D1
DE60136408D1 DE60136408T DE60136408T DE60136408D1 DE 60136408 D1 DE60136408 D1 DE 60136408D1 DE 60136408 T DE60136408 T DE 60136408T DE 60136408 T DE60136408 T DE 60136408T DE 60136408 D1 DE60136408 D1 DE 60136408D1
Authority
DE
Germany
Prior art keywords
chemical
production
low
mechanical polishing
metal lines
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60136408T
Other languages
English (en)
Inventor
Karl-Heins Allers
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Intel Germany Holding GmbH
Original Assignee
Infineon Technologies AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies AG filed Critical Infineon Technologies AG
Application granted granted Critical
Publication of DE60136408D1 publication Critical patent/DE60136408D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/14—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation taking regard of the temperature during grinding
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/7684—Smoothing; Planarisation
DE60136408T 2000-03-23 2001-03-22 Verfahren zur chemisch-mechanischen Polierung von Metalleitungen mit niedrigem Mulden-Effekt in der Herstellung von halbleitenden Wafern Expired - Lifetime DE60136408D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/533,527 US6228771B1 (en) 2000-03-23 2000-03-23 Chemical mechanical polishing process for low dishing of metal lines in semiconductor wafer fabrication

Publications (1)

Publication Number Publication Date
DE60136408D1 true DE60136408D1 (de) 2008-12-18

Family

ID=24126346

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60136408T Expired - Lifetime DE60136408D1 (de) 2000-03-23 2001-03-22 Verfahren zur chemisch-mechanischen Polierung von Metalleitungen mit niedrigem Mulden-Effekt in der Herstellung von halbleitenden Wafern

Country Status (4)

Country Link
US (1) US6228771B1 (de)
EP (2) EP1139406B1 (de)
DE (1) DE60136408D1 (de)
TW (1) TW516117B (de)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6551935B1 (en) * 2000-08-31 2003-04-22 Micron Technology, Inc. Slurry for use in polishing semiconductor device conductive structures that include copper and tungsten and polishing methods
JP3665551B2 (ja) * 2000-09-22 2005-06-29 沖電気工業株式会社 半導体ウエハ用評価パターン及びそれを用いた半導体ウエハの評価方法
DE10054190C2 (de) * 2000-11-02 2003-03-27 Promos Technologies Inc Verfahren zum Einebnen einer Isolierung in Form eines flachen Grabens
US6667239B2 (en) 2001-01-23 2003-12-23 Asml Us, Inc. Chemical mechanical polishing of copper-oxide damascene structures
JP3639229B2 (ja) * 2001-07-17 2005-04-20 松下電器産業株式会社 堆積膜の平坦化方法
TW583731B (en) * 2001-08-23 2004-04-11 Mykrolis Corp Process, system, and liquid composition for selectively removing a metal film
US6585567B1 (en) 2001-08-31 2003-07-01 Koninklijke Philips Electronics N.V. Short CMP polish method
US6638145B2 (en) 2001-08-31 2003-10-28 Koninklijke Philips Electronics N.V. Constant pH polish and scrub
US6934032B1 (en) * 2002-09-30 2005-08-23 Advanced Micro Devices, Inc. Copper oxide monitoring by scatterometry/ellipsometry during nitride or BLOK removal in damascene process
US7208404B2 (en) * 2003-10-16 2007-04-24 Taiwan Semiconductor Manufacturing Company Method to reduce Rs pattern dependence effect
US7375027B2 (en) 2004-10-12 2008-05-20 Promos Technologies Inc. Method of providing contact via to a surface
DE102005004384A1 (de) * 2005-01-31 2006-08-10 Advanced Micro Devices, Inc., Sunnyvale Verfahren zur Herstellung einer definierten Vertiefung in einer Damaszener-Struktur unter Verwendung eines CMP Prozesses und eine Damaszener-Struktur
JP4524643B2 (ja) * 2005-05-18 2010-08-18 株式会社Ｓｕｍｃｏ ウェーハ研磨方法
US20080261400A1 (en) * 2005-12-21 2008-10-23 Asahi Glass Company, Limited Polishing composition, polishing method, and method for forming copper wiring for semiconductor integrated circuit

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3216104B2 (ja) * 1991-05-29 2001-10-09 ソニー株式会社 メタルプラグ形成方法及び配線形成方法
US5607718A (en) * 1993-03-26 1997-03-04 Kabushiki Kaisha Toshiba Polishing method and polishing apparatus
US5647952A (en) * 1996-04-01 1997-07-15 Industrial Technology Research Institute Chemical/mechanical polish (CMP) endpoint method
JP3076244B2 (ja) * 1996-06-04 2000-08-14 日本電気株式会社 多層配線の研磨方法
US5954997A (en) * 1996-12-09 1999-09-21 Cabot Corporation Chemical mechanical polishing slurry useful for copper substrates
BR9809311A (pt) * 1997-04-30 2000-07-04 Minnesota Mining & Mfg Processo de modificação de uma superfìcie de uma pastilha adequada para fabricação de um dispositivo semicondutor, e, pastilha adequada para fabricação de semicondutores
US6001730A (en) * 1997-10-20 1999-12-14 Motorola, Inc. Chemical mechanical polishing (CMP) slurry for polishing copper interconnects which use tantalum-based barrier layers
JP3371775B2 (ja) * 1997-10-31 2003-01-27 株式会社日立製作所 研磨方法
US6083840A (en) * 1998-11-25 2000-07-04 Arch Specialty Chemicals, Inc. Slurry compositions and method for the chemical-mechanical polishing of copper and copper alloys
US6261158B1 (en) * 1998-12-16 2001-07-17 Speedfam-Ipec Multi-step chemical mechanical polishing
US6114246A (en) * 1999-01-07 2000-09-05 Vlsi Technology, Inc. Method of using a polish stop film to control dishing during copper chemical mechanical polishing
EP1210395B1 (de) * 1999-08-24 2003-10-22 Rodel Holdings, Inc. Zusammensetzung und verfahren zum chemisch-mechanischen polieren von isolatoren und metallen
JP2001085378A (ja) * 1999-09-13 2001-03-30 Sony Corp 半導体装置およびその製造方法
JP2001144050A (ja) * 1999-11-15 2001-05-25 Hitachi Chem Co Ltd 研磨方法
US7041599B1 (en) * 1999-12-21 2006-05-09 Applied Materials Inc. High through-put Cu CMP with significantly reduced erosion and dishing

Also Published As

Publication number Publication date
EP1139406B1 (de) 2008-11-05
TW516117B (en) 2003-01-01
EP1139406A3 (de) 2003-11-12
EP1562228A3 (de) 2007-05-30
EP1139406A2 (de) 2001-10-04
US6228771B1 (en) 2001-05-08
EP1562228A2 (de) 2005-08-10
EP1562228B1 (de) 2015-08-19

Similar Documents

Publication Publication Date Title
DE50100177D1 (de) Verfahren zur Oberflächenpolitur von Siliciumscheiben
DE60136408D1 (de) Verfahren zur chemisch-mechanischen Polierung von Metalleitungen mit niedrigem Mulden-Effekt in der Herstellung von halbleitenden Wafern
DE69927840D1 (de) Verfahren zum reinigen der oberflächen von dielektrischen polymerischen halbleiterscheiben mit niedrigem k-wert
DE60009997D1 (de) Eine eine wässrige Dispersionszusammensetzung verwendende chemisch-mechanische Poliermethode zur Verwendung in der Herstellung von Halbleitervorrichtungen
DE60116216D1 (de) Verfahren zur Reduzierung der Dielektrizitätskonstante in einer SiOC Schicht
DE69905722D1 (de) Verfahren zur Herstellung texturierter Gegenstände
DE69434536D1 (de) Verfahren zur Herstellung von halbleitenden Wafern
DE50000852D1 (de) Verfahren zur Herstellung von Aminen
DE60003015D1 (de) Schleifartikel, verfahren zur herstellung desselben, und schleifvorrichtung
DE69902638D1 (de) Integriertes verfahren zur herstellung von dien-komplexen
AT7109U3 (de) Verfahren zur herstellung von amlodipinmaleat
DE69908624D1 (de) Verfahren zum Abrasionspolieren
DE50211139D1 (de) Verfahren zum rückseitenschleifen von wafern
DE50111378D1 (de) Vorrichtung und verfahren zur reinigung von in der produktion von halbleiterelementen benutzten objekten
ATE388026T1 (de) Verfahren zur herstellung von oberflächenelementen
DE69618022D1 (de) Verfahren zur Herstellung von Schleifmitteln
DE69927486D1 (de) Verfahren zur herstellung von flüssigen polyfunktionellen zusätzen
DE60045735D1 (de) Verfahren zur herstellung von silizium epitaktischem wafer
DE10083372T1 (de) Verfahren zum Untersuchen der Oberfläche von Halbleiterwafern
DE50114795D1 (de) Verfahren zur herstellung von polyisobutenylphenolen
DE69902393D1 (de) Schleifmittel mit separat geformten, schleifhilfsmittel enthaltenden oberseitenoberflächenerhebungen und verfahren zur herstellung
DE60026607D1 (de) Verfahren zur herstellung von perfluoroalkadienen
DE69703600D1 (de) Verfahren zur Herstellung von Halbleiterscheiben
DE69922783D1 (de) Verfahren zur herstellung von detergentteilchen
DE60106972D1 (de) Verfahren zur herstellung von verstärkten waferpolierkissen und diese verfahren implementierende vorrichtungen

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: LANTIQ DEUTSCHLAND GMBH, 85579 NEUBIBERG, DE