DE60137927D1 - Halo-implantatfreier, nichtgleichrichtender kontakt auf einem chip mit halo-diffusionsgebieten - Google Patents

Halo-implantatfreier, nichtgleichrichtender kontakt auf einem chip mit halo-diffusionsgebieten

Info

Publication number
DE60137927D1
DE60137927D1 DE60137927T DE60137927T DE60137927D1 DE 60137927 D1 DE60137927 D1 DE 60137927D1 DE 60137927 T DE60137927 T DE 60137927T DE 60137927 T DE60137927 T DE 60137927T DE 60137927 D1 DE60137927 D1 DE 60137927D1
Authority
DE
Germany
Prior art keywords
diffusion
halo
rectifying
contact
adjacent
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60137927T
Other languages
English (en)
Inventor
James Culp
Jawahar Nayak
Werner Rausch
Melanie Sherony
Steven Voldman
Noah Zamdmer
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of DE60137927D1 publication Critical patent/DE60137927D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4966—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a composite material, e.g. organic material, TiN, MoSi2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/107—Substrate region of field-effect devices
    • H01L29/1075—Substrate region of field-effect devices of field-effect transistors
    • H01L29/1079—Substrate region of field-effect devices of field-effect transistors with insulated gate
    • H01L29/1083—Substrate region of field-effect devices of field-effect transistors with insulated gate with an inactive supplementary region, e.g. for preventing punch-through, improving capacity effect or leakage current
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
    • H01L29/7835—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's with asymmetrical source and drain regions, e.g. lateral high-voltage MISFETs with drain offset region, extended drain MISFETs
DE60137927T 2000-06-08 2001-05-23 Halo-implantatfreier, nichtgleichrichtender kontakt auf einem chip mit halo-diffusionsgebieten Expired - Lifetime DE60137927D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/589,719 US6429482B1 (en) 2000-06-08 2000-06-08 Halo-free non-rectifying contact on chip with halo source/drain diffusion
PCT/GB2001/002273 WO2001095369A2 (en) 2000-06-08 2001-05-23 Halo-free non-rectifying contact on chip with halo source/drain diffusion

Publications (1)

Publication Number Publication Date
DE60137927D1 true DE60137927D1 (de) 2009-04-23

Family

ID=24359197

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60137927T Expired - Lifetime DE60137927D1 (de) 2000-06-08 2001-05-23 Halo-implantatfreier, nichtgleichrichtender kontakt auf einem chip mit halo-diffusionsgebieten

Country Status (13)

Country Link
US (2) US6429482B1 (de)
EP (1) EP1290719B1 (de)
JP (1) JP3962326B2 (de)
KR (1) KR100500805B1 (de)
CN (1) CN1234175C (de)
AT (1) ATE425551T1 (de)
AU (1) AU2001258594A1 (de)
DE (1) DE60137927D1 (de)
HK (1) HK1055508A1 (de)
MX (1) MXPA02011791A (de)
MY (1) MY133983A (de)
TW (1) TW512434B (de)
WO (1) WO2001095369A2 (de)

Families Citing this family (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6692998B2 (en) * 2000-11-30 2004-02-17 International Business Machines Corporation Integrated high quality diode
JP4676069B2 (ja) * 2001-02-07 2011-04-27 パナソニック株式会社 半導体装置の製造方法
US6894324B2 (en) * 2001-02-15 2005-05-17 United Microelectronics Corp. Silicon-on-insulator diodes and ESD protection circuits
US6867103B1 (en) * 2002-05-24 2005-03-15 Taiwan Semiconductor Manufacturing Company Method of fabricating an ESD device on SOI
US7226843B2 (en) * 2002-09-30 2007-06-05 Intel Corporation Indium-boron dual halo MOSFET
JP2004311903A (ja) * 2003-04-10 2004-11-04 Oki Electric Ind Co Ltd 半導体装置及び製造方法
US7138318B2 (en) * 2003-05-28 2006-11-21 Advanced Micro Devices, Inc. Method of fabricating body-tied SOI transistor having halo implant region underlying hammerhead portion of gate
US7375402B2 (en) * 2004-07-07 2008-05-20 Semi Solutions, Llc Method and apparatus for increasing stability of MOS memory cells
US7224205B2 (en) * 2004-07-07 2007-05-29 Semi Solutions, Llc Apparatus and method for improving drive-strength and leakage of deep submicron MOS transistors
US8247840B2 (en) * 2004-07-07 2012-08-21 Semi Solutions, Llc Apparatus and method for improved leakage current of silicon on insulator transistors using a forward biased diode
US7683433B2 (en) 2004-07-07 2010-03-23 Semi Solution, Llc Apparatus and method for improving drive-strength and leakage of deep submicron MOS transistors
US7651905B2 (en) * 2005-01-12 2010-01-26 Semi Solutions, Llc Apparatus and method for reducing gate leakage in deep sub-micron MOS transistors using semi-rectifying contacts
US7898297B2 (en) * 2005-01-04 2011-03-01 Semi Solution, Llc Method and apparatus for dynamic threshold voltage control of MOS transistors in dynamic logic circuits
US7227204B2 (en) * 2005-02-16 2007-06-05 International Business Machines Corporation Structure for improved diode ideality
US7612410B1 (en) * 2005-08-08 2009-11-03 Altera Corporation Trigger device for ESD protection circuit
US20070048925A1 (en) * 2005-08-24 2007-03-01 International Business Machines Corporation Body-Contacted Silicon on Insulation (SOI) field effect transistors
US7679029B2 (en) * 2005-10-28 2010-03-16 Cymer, Inc. Systems and methods to shape laser light as a line beam for interaction with a substrate having surface variations
US7335563B2 (en) 2005-11-09 2008-02-26 International Business Machines Corporation Rotated field effect transistors and method of manufacture
US7737500B2 (en) * 2006-04-26 2010-06-15 International Business Machines Corporation CMOS diodes with dual gate conductors, and methods for forming the same
US7863689B2 (en) * 2006-09-19 2011-01-04 Semi Solutions, Llc. Apparatus for using a well current source to effect a dynamic threshold voltage of a MOS transistor
US20080079051A1 (en) * 2006-09-29 2008-04-03 Luo Yuan Varactor with halo implant regions of opposite polarity
JP2008117938A (ja) * 2006-11-06 2008-05-22 Toshiba Corp 半導体記憶装置
JP4329829B2 (ja) * 2007-02-27 2009-09-09 株式会社デンソー 半導体装置
US7485520B2 (en) * 2007-07-05 2009-02-03 International Business Machines Corporation Method of manufacturing a body-contacted finfet
US8110465B2 (en) 2007-07-30 2012-02-07 International Business Machines Corporation Field effect transistor having an asymmetric gate electrode
US7932136B2 (en) * 2008-04-24 2011-04-26 International Business Machines Corporation Source/drain junction for high performance MOSFET formed by selective EPI process
US8665570B2 (en) * 2009-03-13 2014-03-04 Qualcomm Incorporated Diode having a pocket implant blocked and circuits and methods employing same
US7829939B1 (en) * 2009-04-20 2010-11-09 International Business Machines Corporation MOSFET including epitaxial halo region
US7858469B1 (en) * 2009-09-24 2010-12-28 Altera Corporation Method for forming a trigger device for ESD protection circuit
US9577079B2 (en) 2009-12-17 2017-02-21 Infineon Technologies Ag Tunnel field effect transistors
US8426917B2 (en) * 2010-01-07 2013-04-23 International Business Machines Corporation Body-tied asymmetric P-type field effect transistor
US8643107B2 (en) * 2010-01-07 2014-02-04 International Business Machines Corporation Body-tied asymmetric N-type field effect transistor
US9006054B2 (en) 2013-06-13 2015-04-14 International Business Machines Corporation Lateral diode compatible with FinFET and method to fabricate same
CN103700702B (zh) * 2013-12-30 2016-08-24 杭州电子科技大学 漏/源区介质/pn结隔离前栅p-mosfet射频开关器件

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5185280A (en) 1991-01-29 1993-02-09 Texas Instruments Incorporated Method of fabricating a soi transistor with pocket implant and body-to-source (bts) contact
US5650340A (en) 1994-08-18 1997-07-22 Sun Microsystems, Inc. Method of making asymmetric low power MOS devices
KR960026960A (ko) * 1994-12-16 1996-07-22 리 패치 비대칭 저전력 모스(mos) 소자
US5578506A (en) 1995-02-27 1996-11-26 Alliedsignal Inc. Method of fabricating improved lateral Silicon-On-Insulator (SOI) power device
US5744372A (en) * 1995-04-12 1998-04-28 National Semiconductor Corporation Fabrication of complementary field-effect transistors each having multi-part channel
US5936278A (en) 1996-03-13 1999-08-10 Texas Instruments Incorporated Semiconductor on silicon (SOI) transistor with a halo implant
US5811857A (en) 1996-10-22 1998-09-22 International Business Machines Corporation Silicon-on-insulator body-coupled gated diode for electrostatic discharge (ESD) and analog applications
US5952695A (en) 1997-03-05 1999-09-14 International Business Machines Corporation Silicon-on-insulator and CMOS-on-SOI double film structures
US5923067A (en) 1997-04-04 1999-07-13 International Business Machines Corporation 3-D CMOS-on-SOI ESD structure and method
US5985727A (en) * 1997-06-30 1999-11-16 Sun Microsystems, Inc. Method for forming MOS devices with retrograde pocket regions and counter dopant regions buried in the substrate surface
US6051458A (en) * 1998-05-04 2000-04-18 Taiwan Semiconductor Manufacturing Company Drain and source engineering for ESD-protection transistors
US6015993A (en) * 1998-08-31 2000-01-18 International Business Machines Corporation Semiconductor diode with depleted polysilicon gate structure and method
US5959335A (en) 1998-09-23 1999-09-28 International Business Machines Corporation Device design for enhanced avalanche SOI CMOS
US6194278B1 (en) * 1999-06-21 2001-02-27 Infineon Technologies North America Corp. Device performance by employing an improved method for forming halo implants

Also Published As

Publication number Publication date
TW512434B (en) 2002-12-01
CN1434983A (zh) 2003-08-06
US20020149058A1 (en) 2002-10-17
JP3962326B2 (ja) 2007-08-22
KR100500805B1 (ko) 2005-07-12
AU2001258594A1 (en) 2001-12-17
JP2003536251A (ja) 2003-12-02
EP1290719B1 (de) 2009-03-11
WO2001095369A2 (en) 2001-12-13
WO2001095369A3 (en) 2002-05-16
MY133983A (en) 2007-11-30
HK1055508A1 (en) 2004-01-09
CN1234175C (zh) 2005-12-28
MXPA02011791A (es) 2003-04-10
US6750109B2 (en) 2004-06-15
ATE425551T1 (de) 2009-03-15
EP1290719A2 (de) 2003-03-12
KR20030028478A (ko) 2003-04-08
US6429482B1 (en) 2002-08-06

Similar Documents

Publication Publication Date Title
DE60137927D1 (de) Halo-implantatfreier, nichtgleichrichtender kontakt auf einem chip mit halo-diffusionsgebieten
US4893157A (en) Semiconductor device
TW200509259A (en) Highly integrated semiconductor device with silicide layer that secures contact margin and method of manufacturing the same
TW200520237A (en) Semiconductor device with high-k gate dielectric
TW200516717A (en) Structure and method of a strained channel transistor and a second semiconductor component in an integrated circuit
ATE375008T1 (de) Feldeffekttransistorstruktur und herstellungsverfahren
WO2001088997A3 (en) Trench-gate semiconductor device and method of making the same
WO2003100865A3 (en) Microwave field effect transistor structure
US6043532A (en) DMOS transistor protected against "snap-back"
EP1085577A3 (de) Leistungs-Feldeffekttransistor mit einer Graben-Gateelektrode und Verfahren zu dessen Herstellung
WO2003098663A3 (en) Trench mosfet with field relief feature
IL158845A0 (en) Vertical metal oxide semiconductor field-effect diodes
KR870009542A (ko) Mosfet의 소오스가 부하에 연결되는 mosfet를 동작시키기 위한 회로배열
EP1233453A3 (de) Integrierter Halbleiter-Schaltkreis mit einer Antisicherung, Herstellungsverfahren, und Verfahren zum Schreiben von Daten in denselbigen
TW200505030A (en) MOS type semi conductor device
SE0302594D0 (sv) Vertical DMOS transistor device, integrated circuit, and fabrication method thereof
KR960030394A (ko) 정전보호기능을 갖는 반도체 집적 회로 장치
BR0006785A (pt) Transistor sic nmosfet para uso como interruptor de força e método para sua fabricação
EP0948041A3 (de) Transistor mit isoliertem Gate, Verfahren zu dessen Herstellung und Vorrichtung auf der Basis einer Integrierten Halbleiterschaltung
KR930005353A (ko) 전력스위칭용모스트랜지스터
KR970024166A (ko) DRAM 및 로직 회로의 DRAM 전원 및 SCR용 바이모덜 ESD 보호 회로 (Bimodal ESD Protection for DRAM Power Supplies and SCRs for DRAMs and Logic Circuits)
KR930022590A (ko) 깊은 p 본체 접촉 소오스 플러그를 갖는 전계효과 트랜지스터
KR940008130A (ko) 반도체 장치 및 그 제조 방법
CN204946898U (zh) 半导体装置
TW200610102A (en) Novel ldmos IC technology with low threshold voltage

Legal Events

Date Code Title Description
8320 Willingness to grant licences declared (paragraph 23)
8364 No opposition during term of opposition