DE60138595D1 - Verfahren zur Abscheidung einer Siliziumkarbidschicht zur Herstellung integrierter Schaltkreise - Google Patents

Verfahren zur Abscheidung einer Siliziumkarbidschicht zur Herstellung integrierter Schaltkreise

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Publication number
DE60138595D1
DE60138595D1 DE60138595T DE60138595T DE60138595D1 DE 60138595 D1 DE60138595 D1 DE 60138595D1 DE 60138595 T DE60138595 T DE 60138595T DE 60138595 T DE60138595 T DE 60138595T DE 60138595 D1 DE60138595 D1 DE 60138595D1
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DE
Germany
Prior art keywords
depositing
silicon carbide
integrated circuits
carbide layer
make integrated
Prior art date
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Expired - Fee Related
Application number
DE60138595T
Other languages
English (en)
Inventor
Srinivas D Nemani
Li-Qun Xia
Dian Sugiarto
Ellie Yieh
Ping Xu
Francimar Campana-Schmitt
Jia Lee
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Applied Materials Inc
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Applied Materials Inc
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Publication of DE60138595D1 publication Critical patent/DE60138595D1/de
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
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    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02337—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour
    • H01L21/0234—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour treatment by exposure to a plasma
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/32—Carbides
    • C23C16/325—Silicon carbide
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    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/931—Silicon carbide semiconductor
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US20050020048A1 (en) 2005-01-27
US6764958B1 (en) 2004-07-20
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US20060141805A1 (en) 2006-06-29
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JP5027360B2 (ja) 2012-09-19
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