DE60143152D1 - Optoelektrisches element - Google Patents

Optoelektrisches element

Info

Publication number
DE60143152D1
DE60143152D1 DE60143152T DE60143152T DE60143152D1 DE 60143152 D1 DE60143152 D1 DE 60143152D1 DE 60143152 T DE60143152 T DE 60143152T DE 60143152 T DE60143152 T DE 60143152T DE 60143152 D1 DE60143152 D1 DE 60143152D1
Authority
DE
Germany
Prior art keywords
optoelectric element
optoelectric
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60143152T
Other languages
English (en)
Inventor
Godefridus J Verhoeckx
Leth Nicolaas J Van
Cornelis G Visser
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Koninklijke Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninklijke Philips Electronics NV filed Critical Koninklijke Philips Electronics NV
Application granted granted Critical
Publication of DE60143152D1 publication Critical patent/DE60143152D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
DE60143152T 2000-06-29 2001-06-22 Optoelektrisches element Expired - Lifetime DE60143152D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP00202263 2000-06-29
PCT/EP2001/007091 WO2002001649A1 (en) 2000-06-29 2001-06-22 Optoelectric element

Publications (1)

Publication Number Publication Date
DE60143152D1 true DE60143152D1 (de) 2010-11-11

Family

ID=8171713

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60143152T Expired - Lifetime DE60143152D1 (de) 2000-06-29 2001-06-22 Optoelektrisches element

Country Status (8)

Country Link
US (1) US6686581B2 (de)
EP (1) EP1228540B1 (de)
JP (1) JP4928046B2 (de)
KR (1) KR100869866B1 (de)
CN (1) CN1263168C (de)
DE (1) DE60143152D1 (de)
TW (1) TW511302B (de)
WO (1) WO2002001649A1 (de)

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KR20050044865A (ko) 2002-05-08 2005-05-13 포세온 테크날러지 인코퍼레이티드 고효율 고체상태 광원과 이용 및 제조 방법
US6828596B2 (en) * 2002-06-13 2004-12-07 Lumileds Lighting U.S., Llc Contacting scheme for large and small area semiconductor light emitting flip chip devices
US6864110B2 (en) * 2002-10-22 2005-03-08 Agilent Technologies, Inc. Electrophoretic processes for the selective deposition of materials on a semiconducting device
WO2005043954A2 (en) * 2003-10-31 2005-05-12 Phoseon Technology, Inc. Series wiring of highly reliable light sources
EP1678442B8 (de) * 2003-10-31 2013-06-26 Phoseon Technology, Inc. LED-Lichtmodul und Herstellungsverfahren
DE202005002110U1 (de) * 2004-02-19 2005-05-04 Hong-Yuan Technology Co., Ltd., Yonghe Lichtemittierende Vorrichtung
WO2005091392A1 (en) 2004-03-18 2005-09-29 Phoseon Technology, Inc. Micro-reflectors on a substrate for high-density led array
TWI257718B (en) 2004-03-18 2006-07-01 Phoseon Technology Inc Direct cooling of LEDs
EP1743384B1 (de) * 2004-03-30 2015-08-05 Phoseon Technology, Inc. Led-gruppe mit led-detektoren auf gruppenbasis
DE602005027201D1 (de) * 2004-04-12 2011-05-12 Phoseon Technology Inc Hochdichtes led-array
US8077305B2 (en) * 2004-04-19 2011-12-13 Owen Mark D Imaging semiconductor structures using solid state illumination
KR101288758B1 (ko) * 2004-12-30 2013-07-23 포세온 테크날러지 인코퍼레이티드 산업 공정에서 광원을 사용하는 시스템 및 방법
US8748923B2 (en) * 2005-03-14 2014-06-10 Philips Lumileds Lighting Company Llc Wavelength-converted semiconductor light emitting device
US7341878B2 (en) * 2005-03-14 2008-03-11 Philips Lumileds Lighting Company, Llc Wavelength-converted semiconductor light emitting device
US7642527B2 (en) * 2005-12-30 2010-01-05 Phoseon Technology, Inc. Multi-attribute light effects for use in curing and other applications involving photoreactions and processing
US8062925B2 (en) * 2006-05-16 2011-11-22 Koninklijke Philips Electronics N.V. Process for preparing a semiconductor light-emitting device for mounting
KR101421415B1 (ko) * 2007-02-12 2014-07-22 코닌클리케 필립스 엔.브이. 대면적 발광 다이오드 광원
KR100967952B1 (ko) * 2008-01-10 2010-07-06 (주)삼우아이엠씨 도로포장의 덧씌우기 공법
KR100973238B1 (ko) 2008-03-26 2010-07-30 서울반도체 주식회사 형광체 코팅방법 및 장치 그리고 형광체 코팅층을 포함하는ｌｅｄ
CN102714263B (zh) 2010-02-25 2015-11-25 韩国莱太柘晶电株式会社 发光二极管及其制造方法
US9062847B2 (en) * 2011-04-13 2015-06-23 Osram Gmbh Method for manufacturing a phospor device and lighting apparatus comprising such phosphor device
DE102013109031B4 (de) * 2013-08-21 2021-11-04 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung eines optoelektronischen Halbleiterchips
DE102015106635A1 (de) * 2015-04-29 2016-11-03 Osram Opto Semiconductors Gmbh Optoelektronische Anordnung
US10573843B2 (en) 2015-08-05 2020-02-25 Apple Inc. Light-emitting device having an electrode with varying sheet resistance

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JPS586252B2 (ja) 1978-09-29 1983-02-03 伊勢電子工業株式会社 陰極線表示パネルの製造方法
JPS6010120B2 (ja) * 1982-09-14 1985-03-15 ソニー株式会社 粉体の非水溶液系電着法
DE69214780T2 (de) 1991-12-11 1997-05-15 Agfa Gevaert Nv Methode zur Herstellung eines radiographischen Schirmes
US5226053A (en) * 1991-12-27 1993-07-06 At&T Bell Laboratories Light emitting diode
US5557115A (en) * 1994-08-11 1996-09-17 Rohm Co. Ltd. Light emitting semiconductor device with sub-mount
JP2795194B2 (ja) 1994-09-22 1998-09-10 株式会社デンソー エレクトロルミネッセンス素子とその製造方法
US5537738A (en) * 1995-02-10 1996-07-23 Micron Display Technology Inc. Methods of mechanical and electrical substrate connection
JPH11510968A (ja) 1996-06-11 1999-09-21 フィリップス エレクトロニクス ネムローゼ フェンノートシャップ 紫外発光ダイオード及び紫外励起可視光放射蛍光体を含む可視発光ディスプレイ及び該デバイスの製造方法
DE19638667C2 (de) 1996-09-20 2001-05-17 Osram Opto Semiconductors Gmbh Mischfarbiges Licht abstrahlendes Halbleiterbauelement mit Lumineszenzkonversionselement
US5813752A (en) * 1997-05-27 1998-09-29 Philips Electronics North America Corporation UV/blue LED-phosphor device with short wave pass, long wave pass band pass and peroit filters
US5813753A (en) 1997-05-27 1998-09-29 Philips Electronics North America Corporation UV/blue led-phosphor device with efficient conversion of UV/blues light to visible light
EP0924966A1 (de) * 1997-06-30 1999-06-23 Aventis Research & Technologies GmbH & Co. KG Dünnschnitt-Elektrode für flache organische lichtemittierende Vorrichtungen und Herstellungsverfahren
JP3617587B2 (ja) 1997-07-17 2005-02-09 日亜化学工業株式会社 発光ダイオード及びその形成方法
JPH1187778A (ja) * 1997-09-02 1999-03-30 Toshiba Corp 半導体発光素子、半導体発光装置およびその製造方法
US6236060B1 (en) * 1997-11-19 2001-05-22 International Business Machines Corporation Light emitting structures in back-end of line silicon technology
US5952681A (en) 1997-11-24 1999-09-14 Chen; Hsing Light emitting diode emitting red, green and blue light
US6153075A (en) * 1998-02-26 2000-11-28 Micron Technology, Inc. Methods using electrophoretically deposited patternable material
DE29804149U1 (de) * 1998-03-09 1998-06-18 Chen Hsing Leuchtdiode (LED) mit verbesserter Struktur
US6366018B1 (en) 1998-10-21 2002-04-02 Sarnoff Corporation Apparatus for performing wavelength-conversion using phosphors with light emitting diodes
JP2000150966A (ja) * 1998-11-16 2000-05-30 Matsushita Electronics Industry Corp 半導体発光装置及びその製造方法
US6373188B1 (en) 1998-12-22 2002-04-16 Honeywell International Inc. Efficient solid-state light emitting device with excited phosphors for producing a visible light output
US6203681B1 (en) 1999-05-07 2001-03-20 Micron Technology, Inc. Methods of fabricating display screens using electrophoretic deposition
JP2001111109A (ja) * 1999-10-07 2001-04-20 Sharp Corp 窒化ガリウム系化合物半導体発光素子

Also Published As

Publication number Publication date
US6686581B2 (en) 2004-02-03
TW511302B (en) 2002-11-21
JP2004502307A (ja) 2004-01-22
EP1228540B1 (de) 2010-09-29
CN1383583A (zh) 2002-12-04
KR100869866B1 (ko) 2008-11-24
US20020014838A1 (en) 2002-02-07
JP4928046B2 (ja) 2012-05-09
CN1263168C (zh) 2006-07-05
EP1228540A1 (de) 2002-08-07
WO2002001649A1 (en) 2002-01-03
KR20020027589A (ko) 2002-04-13

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