DE60144038D1 - Ferroelektrisches nichtschwebendes Speicherelement vom Transistortyp - Google Patents

Ferroelektrisches nichtschwebendes Speicherelement vom Transistortyp

Info

Publication number
DE60144038D1
DE60144038D1 DE60144038T DE60144038T DE60144038D1 DE 60144038 D1 DE60144038 D1 DE 60144038D1 DE 60144038 T DE60144038 T DE 60144038T DE 60144038 T DE60144038 T DE 60144038T DE 60144038 D1 DE60144038 D1 DE 60144038D1
Authority
DE
Germany
Prior art keywords
storage element
type storage
floating transistor
ferroelectric non
ferroelectric
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60144038T
Other languages
English (en)
Inventor
Yasuo Tarui
Kazuo Sakamaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko NPC Corp
Original Assignee
Seiko NPC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko NPC Corp filed Critical Seiko NPC Corp
Application granted granted Critical
Publication of DE60144038D1 publication Critical patent/DE60144038D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/401—Multistep manufacturing processes
    • H01L29/4011—Multistep manufacturing processes for data storage electrodes
    • H01L29/40111—Multistep manufacturing processes for data storage electrodes the electrodes comprising a layer which is used for its ferroelectric properties
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/78391—Field effect transistors with field effect produced by an insulated gate the gate comprising a layer which is used for its ferroelectric properties
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/55—Capacitors with a dielectric comprising a perovskite structure material

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
DE60144038T 2000-03-16 2001-03-16 Ferroelektrisches nichtschwebendes Speicherelement vom Transistortyp Expired - Lifetime DE60144038D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000073507A JP4938921B2 (ja) 2000-03-16 2000-03-16 トランジスタ型強誘電体不揮発性記憶素子

Publications (1)

Publication Number Publication Date
DE60144038D1 true DE60144038D1 (de) 2011-03-31

Family

ID=18591741

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60144038T Expired - Lifetime DE60144038D1 (de) 2000-03-16 2001-03-16 Ferroelektrisches nichtschwebendes Speicherelement vom Transistortyp

Country Status (6)

Country Link
US (1) US6885048B2 (de)
EP (1) EP1143525B1 (de)
JP (1) JP4938921B2 (de)
KR (1) KR100406202B1 (de)
DE (1) DE60144038D1 (de)
TW (1) TW483170B (de)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3390704B2 (ja) * 1999-08-26 2003-03-31 株式会社半導体理工学研究センター 強誘電体不揮発性メモリ
US8796751B2 (en) 2012-11-20 2014-08-05 Micron Technology, Inc. Transistors, memory cells and semiconductor constructions
US9337210B2 (en) 2013-08-12 2016-05-10 Micron Technology, Inc. Vertical ferroelectric field effect transistor constructions, constructions comprising a pair of vertical ferroelectric field effect transistors, vertical strings of ferroelectric field effect transistors, and vertical strings of laterally opposing pairs of vertical ferroelectric field effect transistors
US9263577B2 (en) 2014-04-24 2016-02-16 Micron Technology, Inc. Ferroelectric field effect transistors, pluralities of ferroelectric field effect transistors arrayed in row lines and column lines, and methods of forming a plurality of ferroelectric field effect transistors
US9472560B2 (en) 2014-06-16 2016-10-18 Micron Technology, Inc. Memory cell and an array of memory cells
US9159829B1 (en) 2014-10-07 2015-10-13 Micron Technology, Inc. Recessed transistors containing ferroelectric material
US9276092B1 (en) 2014-10-16 2016-03-01 Micron Technology, Inc. Transistors and methods of forming transistors
US9305929B1 (en) 2015-02-17 2016-04-05 Micron Technology, Inc. Memory cells
US10134982B2 (en) 2015-07-24 2018-11-20 Micron Technology, Inc. Array of cross point memory cells
US9853211B2 (en) 2015-07-24 2017-12-26 Micron Technology, Inc. Array of cross point memory cells individually comprising a select device and a programmable device
JP7248966B2 (ja) * 2016-07-06 2023-03-30 国立研究開発法人産業技術総合研究所 半導体記憶素子、電気配線、光配線、強誘電体ゲートトランジスタ及び電子回路の製造方法並びにメモリセルアレイ及びその製造方法
US10396145B2 (en) 2017-01-12 2019-08-27 Micron Technology, Inc. Memory cells comprising ferroelectric material and including current leakage paths having different total resistances
US10438645B2 (en) 2017-10-27 2019-10-08 Ferroelectric Memory Gmbh Memory cell and methods thereof
JP2019179827A (ja) * 2018-03-30 2019-10-17 ソニーセミコンダクタソリューションズ株式会社 半導体記憶装置及び積和演算装置
US10923502B2 (en) 2019-01-16 2021-02-16 Sandisk Technologies Llc Three-dimensional ferroelectric memory devices including a backside gate electrode and methods of making same
US11170834B2 (en) 2019-07-10 2021-11-09 Micron Technology, Inc. Memory cells and methods of forming a capacitor including current leakage paths having different total resistances
US11289602B2 (en) * 2020-01-03 2022-03-29 Taiwan Semiconductor Manufacturing Company, Ltd. FeFET of 3D structure for capacitance matching
US20220102558A1 (en) * 2020-09-30 2022-03-31 Renesas Electronics Corporation Semiconductor device
US11950430B2 (en) 2020-10-30 2024-04-02 Ferroelectric Memory Gmbh Memory cell, capacitive memory structure, and methods thereof
US11929404B2 (en) 2021-09-01 2024-03-12 International Business Machines Corporation Transistor gates having embedded metal-insulator-metal capacitors

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4649625A (en) * 1985-10-21 1987-03-17 International Business Machines Corporation Dynamic memory device having a single-crystal transistor on a trench capacitor structure and a fabrication method therefor
JPH01143361A (ja) * 1987-11-30 1989-06-05 Sony Corp 不揮発性メモリ
JPH03270175A (ja) * 1990-03-20 1991-12-02 Oki Electric Ind Co Ltd 半導体不揮発性記憶装置
JPH04118973A (ja) * 1990-09-10 1992-04-20 Fujitsu Ltd 半導体装置の製造方法
JPH07161977A (ja) * 1993-12-06 1995-06-23 Hitachi Ltd 半導体装置とその製造方法
JPH08204032A (ja) * 1995-01-20 1996-08-09 Mitsubishi Electric Corp 半導体装置及びその製造方法
JPH09252099A (ja) * 1996-03-15 1997-09-22 Oki Electric Ind Co Ltd 強誘電体メモリトランジスタ及びその製造方法
JPH09330988A (ja) * 1996-06-11 1997-12-22 Sony Corp 積層ゲート型不揮発性半導体記憶装置
JPH10107280A (ja) * 1996-10-01 1998-04-24 Hitachi Ltd 半導体集積回路装置およびその製造方法
KR100238210B1 (ko) * 1996-10-28 2000-01-15 윤종용 산화티탄마그네슘 박막을 이용한 fram 및 ffram 소자
US5770484A (en) * 1996-12-13 1998-06-23 International Business Machines Corporation Method of making silicon on insulator buried plate trench capacitor
JPH10294431A (ja) * 1997-04-18 1998-11-04 Oki Electric Ind Co Ltd 半導体記憶素子およびその製造方法
KR100218275B1 (ko) * 1997-05-09 1999-09-01 윤종용 벌크형 1트랜지스터 구조의 강유전체 메모리소자
JP3190011B2 (ja) 1997-05-23 2001-07-16 ローム株式会社 強誘電体記憶素子およびその製造方法
JPH1131792A (ja) * 1997-07-14 1999-02-02 Oki Electric Ind Co Ltd 半導体記憶素子およびその製造方法
JP3090198B2 (ja) * 1997-08-21 2000-09-18 日本電気株式会社 半導体装置の構造およびその製造方法
US5907762A (en) * 1997-12-04 1999-05-25 Sharp Microelectronics Technology, Inc. Method of manufacture of single transistor ferroelectric memory cell using chemical-mechanical polishing
JPH11177038A (ja) * 1997-12-16 1999-07-02 Asahi Chem Ind Co Ltd Ｍｆｍｉｓ型強誘電体記憶素子とその製造方法
US5990515A (en) 1998-03-30 1999-11-23 Advanced Micro Devices, Inc. Trenched gate non-volatile semiconductor device and method with corner doping and sidewall doping
US6025627A (en) * 1998-05-29 2000-02-15 Micron Technology, Inc. Alternate method and structure for improved floating gate tunneling devices
US6140672A (en) * 1999-03-05 2000-10-31 Symetrix Corporation Ferroelectric field effect transistor having a gate electrode being electrically connected to the bottom electrode of a ferroelectric capacitor
JP3390704B2 (ja) * 1999-08-26 2003-03-31 株式会社半導体理工学研究センター 強誘電体不揮発性メモリ
JP2001110916A (ja) * 1999-10-04 2001-04-20 Fuji Electric Co Ltd 強誘電体ゲートｃｍｏｓトランジスタ

Also Published As

Publication number Publication date
JP2001267514A (ja) 2001-09-28
EP1143525A3 (de) 2003-11-19
US6885048B2 (en) 2005-04-26
KR100406202B1 (ko) 2003-11-17
EP1143525A2 (de) 2001-10-10
KR20010092365A (ko) 2001-10-24
US20040042290A1 (en) 2004-03-04
JP4938921B2 (ja) 2012-05-23
EP1143525B1 (de) 2011-02-16
TW483170B (en) 2002-04-11

Similar Documents

Publication Publication Date Title
DE60144038D1 (de) Ferroelektrisches nichtschwebendes Speicherelement vom Transistortyp
DE60100716D1 (de) Nichtflüchtige Halbleiterspeicher
DE60121865D1 (de) Nichtflüchtige Halbleiterspeicheranordnung
DE60126383D1 (de) Nichtflüchtige Halbleiterspeicheranordnung
DE50100847D1 (de) Thermoelektrisches element
DE60122045D1 (de) Nichtflüchtige Halbleiterspeicheranordnung
DE60119199D1 (de) Speicherzelle
DE60144340D1 (de) Nicht-flüchtiges SONOS-Halbleiterspeicherbauelement
DE60311238D1 (de) Transistorfreier Direktzugriffsspeicher
DE60227330D1 (de) Ferroelektrischer Halbleiterspeicher
DE60239899D1 (de) Nichtflüchtige Halbleiterspeicheranordnung
DE60135514D1 (de) Wischerlagerung
DE60019191D1 (de) Nichtflüchtige ferroelektrische Speicheranordnung
DE69921215D1 (de) Ferroelektrische Speicheranordnung
DE60132512D1 (de) Ferroelektrischer Speicher
DE60129687D1 (de) Reinigungselement
DE50115474D1 (de) Piezoelektrisch erregbares schwingelement
DE69925797D1 (de) Ferroelektrische Speicheranordnung
DE60221313D1 (de) Direktzugriffsspeicher
DE60101126D1 (de) Tintenstrahlaufzeichnungselement
DE69920306D1 (de) Ferroelektrische Speicheranordnung
NO20023754D0 (no) Veggelement
DE60102606D1 (de) Tintenstrahlaufzeichnungselement
DE60305668D1 (de) Erhöhen des lesesignals in ferroelektrischen speichern
DE60221466D1 (de) Nichtflüchtige Halbleiterspeicheranordnung