DE602004012357D1 - Chemisch-mechanisch planarisierende Zusammensetzungen zur Korrosionsverminderung in Halbleiterwafers - Google Patents

Chemisch-mechanisch planarisierende Zusammensetzungen zur Korrosionsverminderung in Halbleiterwafers

Info

Publication number
DE602004012357D1
DE602004012357D1 DE602004012357T DE602004012357T DE602004012357D1 DE 602004012357 D1 DE602004012357 D1 DE 602004012357D1 DE 602004012357 T DE602004012357 T DE 602004012357T DE 602004012357 T DE602004012357 T DE 602004012357T DE 602004012357 D1 DE602004012357 D1 DE 602004012357D1
Authority
DE
Germany
Prior art keywords
chemically
semiconductor wafers
corrosion reduction
mechanically planarizing
planarizing compositions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602004012357T
Other languages
English (en)
Other versions
DE602004012357T2 (de
Inventor
Zhendong Liu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rohm and Haas Electronic Materials CMP Holdings Inc
Rohm and Haas Electronic Materials LLC
Original Assignee
Rohm and Haas Electronic Materials CMP Holdings Inc
Rohm and Haas Electronic Materials LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm and Haas Electronic Materials CMP Holdings Inc, Rohm and Haas Electronic Materials LLC filed Critical Rohm and Haas Electronic Materials CMP Holdings Inc
Publication of DE602004012357D1 publication Critical patent/DE602004012357D1/de
Application granted granted Critical
Publication of DE602004012357T2 publication Critical patent/DE602004012357T2/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
    • C11D1/02—Anionic compounds
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
    • C11D1/38—Cationic compounds
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
    • C11D1/66—Non-ionic compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
DE602004012357T 2003-08-05 2004-07-27 Chemisch-mechanisch planarisierende Zusammensetzungen zur Korrosionsverminderung in Halbleiterwafer Active DE602004012357T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US634964 2003-08-05
US10/634,964 US7300603B2 (en) 2003-08-05 2003-08-05 Chemical mechanical planarization compositions for reducing erosion in semiconductor wafers

Publications (2)

Publication Number Publication Date
DE602004012357D1 true DE602004012357D1 (de) 2008-04-24
DE602004012357T2 DE602004012357T2 (de) 2009-04-02

Family

ID=33552923

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602004012357T Active DE602004012357T2 (de) 2003-08-05 2004-07-27 Chemisch-mechanisch planarisierende Zusammensetzungen zur Korrosionsverminderung in Halbleiterwafer

Country Status (7)

Country Link
US (1) US7300603B2 (de)
EP (1) EP1505134B1 (de)
JP (1) JP2005123577A (de)
KR (1) KR20050016171A (de)
CN (1) CN1317742C (de)
DE (1) DE602004012357T2 (de)
TW (1) TWI365906B (de)

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US7181476B2 (en) * 2003-04-30 2007-02-20 Oracle International Corporation Flashback database
US7018560B2 (en) * 2003-08-05 2006-03-28 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Composition for polishing semiconductor layers
US7300480B2 (en) * 2003-09-25 2007-11-27 Rohm And Haas Electronic Materials Cmp Holdings, Inc. High-rate barrier polishing composition
US20050136670A1 (en) * 2003-12-19 2005-06-23 Ameen Joseph G. Compositions and methods for controlled polishing of copper
US6971945B2 (en) * 2004-02-23 2005-12-06 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Multi-step polishing solution for chemical mechanical planarization
US7253111B2 (en) * 2004-04-21 2007-08-07 Rohm And Haas Electronic Materials Cmp Holding, Inc. Barrier polishing solution
US20060110923A1 (en) * 2004-11-24 2006-05-25 Zhendong Liu Barrier polishing solution
US7427362B2 (en) * 2005-01-26 2008-09-23 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Corrosion-resistant barrier polishing solution
JP5026710B2 (ja) * 2005-09-02 2012-09-19 株式会社フジミインコーポレーテッド 研磨用組成物
JP5135755B2 (ja) * 2005-10-21 2013-02-06 日立化成工業株式会社 銅及び銅合金用研磨剤並びにそれを用いた研磨方法
JP2013214786A (ja) * 2005-11-01 2013-10-17 Hitachi Chemical Co Ltd 銅膜及び絶縁材料膜用研磨材及び研磨方法
US7842192B2 (en) 2006-02-08 2010-11-30 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Multi-component barrier polishing solution
US20070249167A1 (en) * 2006-04-21 2007-10-25 Cabot Microelectronics Corporation CMP method for copper-containing substrates
US9343330B2 (en) * 2006-12-06 2016-05-17 Cabot Microelectronics Corporation Compositions for polishing aluminum/copper and titanium in damascene structures
WO2008102672A1 (ja) * 2007-02-20 2008-08-28 Sumitomo Electric Industries, Ltd. 研磨スラリーおよびその製造方法、ならびに窒化物結晶体およびその表面研磨方法
WO2009005143A1 (ja) * 2007-07-05 2009-01-08 Hitachi Chemical Co., Ltd. 金属膜用研磨液及び研磨方法
US9202709B2 (en) 2008-03-19 2015-12-01 Fujifilm Corporation Polishing liquid for metal and polishing method using the same
US8425797B2 (en) * 2008-03-21 2013-04-23 Cabot Microelectronics Corporation Compositions for polishing aluminum/copper and titanium in damascene structures
US8506661B2 (en) * 2008-10-24 2013-08-13 Air Products & Chemicals, Inc. Polishing slurry for copper films
US9548211B2 (en) 2008-12-04 2017-01-17 Cabot Microelectronics Corporation Method to selectively polish silicon carbide films
TWI454561B (zh) * 2008-12-30 2014-10-01 Uwiz Technology Co Ltd A polishing composition for planarizing the metal layer
CN102627916B (zh) * 2012-03-23 2014-09-03 江苏中晶科技有限公司 具有强化功能的玻璃抛光液
CN107148496A (zh) * 2014-10-21 2017-09-08 嘉柏微电子材料股份公司 腐蚀抑制剂以及相关的组合物及方法
US9593261B2 (en) * 2015-02-04 2017-03-14 Asahi Glass Company, Limited Polishing agent, polishing method, and liquid additive for polishing
US10676647B1 (en) 2018-12-31 2020-06-09 Cabot Microelectronics Corporation Composition for tungsten CMP
CN110434680A (zh) * 2019-07-19 2019-11-12 大连理工大学 一种螺旋桨的化学机械抛光液及抛光方法

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US5391258A (en) 1993-05-26 1995-02-21 Rodel, Inc. Compositions and methods for polishing
US5858813A (en) * 1996-05-10 1999-01-12 Cabot Corporation Chemical mechanical polishing slurry for metal layers and films
US6143662A (en) * 1998-02-18 2000-11-07 Rodel Holdings, Inc. Chemical mechanical polishing composition and method of polishing a substrate
CN1126152C (zh) * 1998-08-31 2003-10-29 长兴化学工业股份有限公司 半导体制程用的化学机械研磨组合物
CA2342332A1 (en) 1998-08-31 2000-03-09 Hiroki Terazaki Abrasive liquid for metal and method for polishing
WO2000039844A1 (en) 1998-12-28 2000-07-06 Hitachi Chemical Company, Ltd. Materials for polishing liquid for metal, polishing liquid for metal, method for preparation thereof and polishing method using the same
KR100472882B1 (ko) * 1999-01-18 2005-03-07 가부시끼가이샤 도시바 수계 분산체, 이를 이용한 화학 기계 연마용 수계 분산체조성물, 웨이퍼 표면의 연마 방법 및 반도체 장치의 제조방법
JP4406111B2 (ja) * 1999-04-28 2010-01-27 花王株式会社 研磨液組成物
JP3912927B2 (ja) * 1999-05-10 2007-05-09 花王株式会社 研磨液組成物
WO2001017006A1 (fr) 1999-08-26 2001-03-08 Hitachi Chemical Company, Ltd. Compose de polissage chimiomecanique et procede de polissage
JP4505891B2 (ja) 1999-09-06 2010-07-21 Ｊｓｒ株式会社 半導体装置の製造に用いる化学機械研磨用水系分散体
JP2001139937A (ja) * 1999-11-11 2001-05-22 Hitachi Chem Co Ltd 金属用研磨液及び研磨方法
US6355075B1 (en) * 2000-02-11 2002-03-12 Fujimi Incorporated Polishing composition
US6709316B1 (en) * 2000-10-27 2004-03-23 Applied Materials, Inc. Method and apparatus for two-step barrier layer polishing
JP4637398B2 (ja) * 2001-04-18 2011-02-23 株式会社フジミインコーポレーテッド 研磨用組成物およびそれを用いた研磨方法
US6485355B1 (en) 2001-06-22 2002-11-26 International Business Machines Corporation Method to increase removal rate of oxide using fixed-abrasive
US6821897B2 (en) 2001-12-05 2004-11-23 Cabot Microelectronics Corporation Method for copper CMP using polymeric complexing agents
US7300602B2 (en) 2003-01-23 2007-11-27 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Selective barrier metal polishing solution
US7018560B2 (en) 2003-08-05 2006-03-28 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Composition for polishing semiconductor layers

Also Published As

Publication number Publication date
EP1505134A1 (de) 2005-02-09
KR20050016171A (ko) 2005-02-21
JP2005123577A (ja) 2005-05-12
US20050029491A1 (en) 2005-02-10
DE602004012357T2 (de) 2009-04-02
US7300603B2 (en) 2007-11-27
EP1505134B1 (de) 2008-03-12
TWI365906B (en) 2012-06-11
CN1590487A (zh) 2005-03-09
CN1317742C (zh) 2007-05-23
TW200512280A (en) 2005-04-01

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